Navitas Semiconductor Corporation - NVTS STOCK NEWS

Navitas Semiconductor (Nasdaq: NVTS) is set to introduce 'IntelliWeave', a patented digital control technique for improving AI data center power supply efficiency, at the IEEE Energy Conversion Congress and Expo (ECCE) this month. IntelliWeave combines next-generation GaN and SiC semiconductors with innovative control strategies to achieve:

- Peak efficiencies up to 99.3% in Power Factor Control (PFC)
- 30% reduction in power losses compared to existing solutions
- Precision current sharing and ultra-fast dynamic response
- Zero voltage switching across the full-load range

The technology has been proven on a 500 kHz GaN-based interleaving 3.2 kW CrM PFC PSU. Navitas' Director, Tao Wei, will present on this novel digital control at ECCE 2024 in Phoenix, Arizona on October 21st.

Navitas Semiconductor (Nasdaq: NVTS) has announced GaNSlim™, a new generation of highly-integrated gallium nitride (GaN) power ICs. These devices offer the highest level of integration and thermal performance, simplifying and speeding up the development of small form factor, high-power-density applications up to 500 W.

Key features of GaNSlim include:

• Integrated drive, control, and protection
• Integrated EMI control and loss-less current sensing
• High thermal performance proprietary DPAK-4L package
• Ultra-low startup current below 10 µA
• Autonomous turn-on/off slew rate control
• Over-temperature protection and auto sleep-mode

Target applications include chargers for mobile devices and laptops, TV power supplies, and lighting. The NV614x GaNSlim family is rated at 700 V with RDS(ON) ratings from 120 mΩ to 330 mΩ, available for both isolated and non-isolated topologies, and comes with a twenty-year warranty.

Navitas Semiconductor (Nasdaq: NVTS) has announced the availability of its high-power GaNSafe family in a TOLT (Transistor Outline Leaded Top-side cooling) package. This new offering is designed for demanding, high-power applications such as AI data centers, solar/energy storage, and industrial markets. The GaNSafe family integrates control, drive, sensing, and critical protection features, making it the world's safest GaN with short-circuit protection, 2kV ESD protection, and programmable slew rate control.

The TOLT packaging enhances thermal dissipation, allowing for reduced operating temperature and increased current capability. Suitable for applications from 1 kW to 22 kW, the 650 V GaNSafe in TOLT packaging is available with RDS(ON)MAX ranging from 25 to 98 mΩ. Navitas will also offer reference design platforms for applications including data center power supplies and EV on-board chargers.

Navitas Semiconductor (Nasdaq: NVTS) has announced the release of third-generation automotive-qualified SiC MOSFETs in D2PAK-7L and TOLL surface-mount packages. These Gen-3 Fast SiC MOSFETs, featuring Navitas' proprietary 'trench-assisted planar' technology, offer superior performance for electric vehicle (EV) applications. Key benefits include:

- Up to 25°C lower case temperatures than conventional devices
- Up to 3x longer operating life in high-stress EV environments
- Optimized for fastest switching speed and highest efficiency
- Support for increased power density in EV systems

The new MOSFETs cater to both 400V (650V-rated) and 800V (1,200V-rated) EV architectures, with RDS(ON) ratings ranging from 20 to 55 mΩ and 18 to 135 mΩ respectively. The TOLL package for 400V EVs offers significant improvements in thermal resistance, PCB footprint, and size compared to D2PAK-7L.

Navitas Semiconductor (Nasdaq: NVTS), a leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced its participation in several upcoming investor events. These include:

• Needham's 5th-Annual Virtual Semiconductor & SemiCap 1x1 Conference on August 21st
• Jefferies Semiconductor, IT Hardware & Communications Technology Conference on August 27th
• Evercore ISI Semiconductor, IT Hardware & Networking Conference on August 28th
• MESH Ventures Investor Meeting (Virtual) on September 3rd
• CICC Investor Call (Mandarin) on September 4th
• Fubon Investor Call on September 5th

These events will feature 1-on-1 meetings and group calls with key executives including CEO Gene Sheridan, CFO Janet Chou, and VP Investor Relations Stephen Oliver.

Navitas Semiconductor (NVTS) reported Q2 2024 financial results, with revenue growing to $20.5 million, a 13% increase year-over-year. The company's performance was at the higher end of guidance, with first-half revenue up nearly 40% year-on-year. Navitas highlighted important advances in AI data center power systems to support nVidia's processor platforms. The company reported a GAAP loss from operations of $31.1 million and a non-GAAP loss of $13.3 million. Cash and cash equivalents stood at $112.0 million with no debt. Navitas saw significant growth in customer pipelines across various markets, including AI data centers, EV/eMobility, appliances/industrial, and solar/energy storage. The company expects Q3 2024 net revenues of $22.0 million ± $500,000 with a non-GAAP gross margin of 40% ± 50 basis points.

Navitas Semiconductor (Nasdaq: NVTS) announced expanded adoption of its GaNFast™ gallium nitride (GaN) power ICs by Samsung. Initially used in flagship Galaxy S22, S23, and S24 models, GaNFast ICs are now incorporated in mainstream Galaxy A series and the innovative Galaxy Z Fold6 and Z Flip6 smartphones.

GaN technology offers significant advantages over legacy silicon, including 20x faster operation, enabling chargers that are 3x more powerful and 3x faster, while being half the size and weight. The new 25W charger (EP-T2510) features energy-saving technology that reduces standby losses by 75% to only 5 mW. This aligns with Navitas' environmental initiatives, as each GaNFast IC saves 4 kg of CO2 compared to legacy silicon chips.

Navitas Semiconductor (Nasdaq: NVTS) has introduced its 3rd generation 650 V 'fast' silicon carbide (SiC) MOSFETs in a robust TOLL package. These Gen-3 'Fast' (G3F) SiC MOSFETs are designed for high-power, high-reliability applications such as AI data centers, EV charging, and energy storage solutions. Key features include:

- Best-in-class low on-resistance of 20 to 55 mΩ
- Optimized for fastest switching speed and highest efficiency
- Up to 25°C lower case temperatures and up to 3x longer life than alternatives
- 9% reduction in junction-to-case thermal resistance
- 30% smaller PCB footprint and 60% smaller size than D2PAK-7L

Navitas' 4.5 kW AI power system reference design, featuring the G3F SiC MOSFET, achieves a peak efficiency above 97% and a power density of 137 W/inch³, making it the world's highest power density AI PSU.

Navitas Semiconductor (Nasdaq: NVTS) has unveiled a groundbreaking 4.5 kW AI data center power supply reference design, featuring optimized GaNSafe™ and Gen-3 'Fast' (G3F) SiC power components. This design achieves the world's highest power density at 137 W/in3 with over 97% efficiency, addressing the increasing power demands of next-generation AI GPUs like NVIDIA's Blackwell B100 and B200.

The design combines 650 V G3F SiC MOSFETs for the PFC stage and 650 V GaNSafe power ICs for the stage, exploiting the strengths of each semiconductor technology. This innovation enables higher frequency operation, cooler performance, and improved reliability. The company reports over 30 data center customer projects in development, potentially driving millions in GaN and SiC revenue from 2024 into 2025.