Welcome to our dedicated page for Navitas Semiconductor Corporation news (Ticker: NVTS), a resource for investors and traders seeking the latest updates and insights on Navitas Semiconductor Corporation stock.
Navitas Semiconductor Corporation (Nasdaq: NVTS) is a leading innovator in the power semiconductor industry, headquartered in El Segundo, California. The company is renowned for its groundbreaking introduction of the world’s first and fastest AllGaN™ power ICs, which revolutionize high-frequency, high-efficiency, and high-density power electronics. These GaNFast™ power ICs integrate gallium nitride (GaN) power with drive, control, and protection mechanisms, enabling faster charging, higher power density, and significant energy savings across various markets including mobile, consumer, enterprise, eMobility, and new energy.
Formed in 2014, Navitas leverages over 150 years of combined expertise in power semiconductors and holds more than 250 patents. The company’s patented GaN technology spans core device, circuit, packaging, and system technologies, further reinforced by extensive trade secrets, access to over $100 million of R&D equipment, and ongoing collaboration with the Hughes Research Lab (HRL).
Navitas operates globally across key markets such as China, Europe, the United States, and other parts of Asia. A significant portion of its revenue is generated from China. The company focuses on creating ultra-efficient GaN semiconductors that replace legacy silicon power chips, delivering superior high-frequency and high-efficiency characteristics. This shift is pivotal in the fast adoption of electric vehicles (EVs), the transition to renewable energy sources, and advancements in data center technologies.
Recent achievements include the establishment of a joint lab with SHINRY in Shenzhen. This collaboration promises to accelerate the development of advanced battery-electric and fuel-cell vehicle power platforms, leveraging Navitas' leading-edge GaN technology. Furthermore, Navitas has introduced a 3.2kW data center power platform and plans to develop even more powerful systems to meet the escalating demands of AI data centers.
Financially, Navitas concluded 2023 with record revenue growth, doubling its annual revenue. The company’s robust customer pipeline includes significant new wins in AI data centers, home appliances, solar inverters, and satellite internet projects, positioning it well for continued growth in 2024 and beyond. For the first quarter of 2024, the company projects net revenues of $23 million and maintains a focus on expanding its footprint in various high-growth markets.
Navitas prides itself on sustainability, being the first semiconductor company to be CarbonNeutral®-certified. The company’s product range includes complementary GeneSiC™ power devices optimized for high-power, high-voltage, and high-reliability applications. With a dedication to innovation and a strong commitment to environmental responsibility, Navitas continues to push the boundaries of power semiconductor technology.
Navitas Semiconductor (Nasdaq: NVTS), a leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced its participation in several upcoming investor events. These include:
- Needham's 5th-Annual Virtual Semiconductor & SemiCap 1x1 Conference on August 21st
- Jefferies Semiconductor, IT Hardware & Communications Technology Conference on August 27th
- Evercore ISI Semiconductor, IT Hardware & Networking Conference on August 28th
- MESH Ventures Investor Meeting (Virtual) on September 3rd
- CICC Investor Call (Mandarin) on September 4th
- Fubon Investor Call on September 5th
These events will feature 1-on-1 meetings and group calls with key executives including CEO Gene Sheridan, CFO Janet Chou, and VP Investor Relations Stephen Oliver.
Navitas Semiconductor (NVTS) reported Q2 2024 financial results, with revenue growing to $20.5 million, a 13% increase year-over-year. The company's performance was at the higher end of guidance, with first-half revenue up nearly 40% year-on-year. Navitas highlighted important advances in AI data center power systems to support nVidia's processor platforms. The company reported a GAAP loss from operations of $31.1 million and a non-GAAP loss of $13.3 million. Cash and cash equivalents stood at $112.0 million with no debt. Navitas saw significant growth in customer pipelines across various markets, including AI data centers, EV/eMobility, appliances/industrial, and solar/energy storage. The company expects Q3 2024 net revenues of $22.0 million ± $500,000 with a non-GAAP gross margin of 40% ± 50 basis points.
Navitas Semiconductor (Nasdaq: NVTS) announced expanded adoption of its GaNFast™ gallium nitride (GaN) power ICs by Samsung. Initially used in flagship Galaxy S22, S23, and S24 models, GaNFast ICs are now incorporated in mainstream Galaxy A series and the innovative Galaxy Z Fold6 and Z Flip6 smartphones.
GaN technology offers significant advantages over legacy silicon, including 20x faster operation, enabling chargers that are 3x more powerful and 3x faster, while being half the size and weight. The new 25W charger (EP-T2510) features energy-saving technology that reduces standby losses by 75% to only 5 mW. This aligns with Navitas' environmental initiatives, as each GaNFast IC saves 4 kg of CO2 compared to legacy silicon chips.
Navitas Semiconductor (Nasdaq: NVTS) has introduced its 3rd generation 650 V 'fast' silicon carbide (SiC) MOSFETs in a robust TOLL package. These Gen-3 'Fast' (G3F) SiC MOSFETs are designed for high-power, high-reliability applications such as AI data centers, EV charging, and energy storage solutions. Key features include:
- Best-in-class low on-resistance of 20 to 55 mΩ
- Optimized for fastest switching speed and highest efficiency
- Up to 25°C lower case temperatures and up to 3x longer life than alternatives
- 9% reduction in junction-to-case thermal resistance
- 30% smaller PCB footprint and 60% smaller size than D2PAK-7L
Navitas' 4.5 kW AI power system reference design, featuring the G3F SiC MOSFET, achieves a peak efficiency above 97% and a power density of 137 W/inch³, making it the world's highest power density AI PSU.
Navitas Semiconductor (Nasdaq: NVTS) has unveiled a groundbreaking 4.5 kW AI data center power supply reference design, featuring optimized GaNSafe™ and Gen-3 'Fast' (G3F) SiC power components. This design achieves the world's highest power density at 137 W/in3 with over 97% efficiency, addressing the increasing power demands of next-generation AI GPUs like NVIDIA's Blackwell B100 and B200.
The design combines 650 V G3F SiC MOSFETs for the PFC stage and 650 V GaNSafe power ICs for the stage, exploiting the strengths of each semiconductor technology. This innovation enables higher frequency operation, cooler performance, and improved reliability. The company reports over 30 data center customer projects in development, potentially driving millions in GaN and SiC revenue from 2024 into 2025.
Navitas Semiconductor (Nasdaq: NVTS) has announced it will release its second quarter 2024 financial results on Monday, August 5th, 2024, after the market closes. The company will host a conference call and live webcast at 2:00 p.m. Pacific / 5:00 p.m. Eastern on the same day to present the results and answer questions from financial analysts.
Investors and interested parties can access the conference call via toll-free dial-in numbers: (800) 715-9871 or (646) 307-1963, using Conference ID: 6394013. A live webcast will be available at https://edge.media-server.com/mmc/p/5g4qt2xi. Following the event, a replay of the call will be accessible from the Investor Relations section of Navitas Semiconductor's website at https://ir.navitassemi.com/.
Navitas Semiconductor, the leader in GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, announced a collaboration with J Rep, their Japanese partner, at the Techno-Frontier trade show.
The event, happening from July 24-26, 2024, at Tokyo Big Sight, will showcase Navitas' innovative technologies like GaNSafe™ GaN power IC, Gen-4 GaNSense™ Half-Bridge ICs, and Gen-3 Fast GeneSiC power FETs.
These products offer high efficiency and reliability for AI data centers, EVs, industrial systems, and fast charging applications.
Techno-Frontier, established in 1981, is Japan's premier exhibition for power supplies and components, expecting over 400 exhibitors and 34,000 visitors.
Navitas Semiconductor (Nasdaq: NVTS) announced that its GaNFast power ICs will be used in Lenovo's latest GaN chargers—the Xiaoxin 105 W and Legion C170 W. The Xiaoxin 105 W charger is designed for daily travel, offering 105 W of power, three ports, and is lightweight at 206 grams. The Legion C170 W charger caters to gamers, delivering 170 W of power and weighing 245 grams. This collaboration marks a continued partnership that has previously resulted in high-performance chargers for Lenovo's gaming and travel segments. Both companies are also committed to sustainability, with Lenovo verified by SBTi for net zero targets and Navitas being CarbonNeutral® certified. Navitas' technology enables efficient, lightweight chargers that reduce carbon emissions.
Navitas Semiconductor (Nasdaq: NVTS) has introduced its Gen-3 'Fast' (G3F) 650 V and 1,200 V SiC MOSFETs, optimized for rapid switching, high efficiency, and increased power density. These components are designed to enhance the performance of AI data centers and EV charging infrastructures.
The G3F MOSFETs showcase a 40% improvement in hard-switching figures-of-merit compared to competitors, enabling next-gen AI power supply units to increase output up to 10 kW and rack power up to 120 kW. Utilizing 'trench-assisted planar' technology, these devices offer superior performance, robustness, and lower power losses, with a 25°C lower case temperature and up to three times longer life than competing products.
In the AI sector, Navitas' latest 4.5 kW high-power density AI Server PSU boasts a power density of 138 W/inch³ and over 97% efficiency. For the EV market, the 1,200 V/34 mOhm G3F FETs enable 22 kW, 800V bi-directional OBC and 3 kW DC-DC converters to reach a power density of 3.5 kW/L and 95.5% peak efficiency.
Navitas Semiconductor (Nasdaq: NVTS) will showcase its latest gallium nitride (GaN) and silicon carbide (SiC) technologies at PCIM 2024 in Nuremberg, Germany from June 11-13. The company will highlight its GaNFast™ and GeneSiC™ semiconductors, emphasizing their applications in AI, EVs, industrial processes, solar energy, and energy storage. Navitas' booth, 'Planet Navitas,' will display technologies promising increased portability, longer range, faster charging, and grid independence, while also contributing to reduced carbon emissions. The event features key presentations on high-efficiency AC-DC converters and evaluations of SiC devices for high-frequency applications, enhancing Navitas' $1.6 billion customer pipeline within a $22 billion market opportunity.
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