Navitas Previews Advances in GaN and SiC Technologies, Including Industry’s First 8.5 kW AI Data Center Power Supply at electronica 2024
Navitas Semiconductor (NVTS) announces groundbreaking developments in GaN and SiC technologies to be showcased at electronica 2024. The highlight is the world's first 8.5 kW power supply for AI data centers, utilizing GaNSafe power ICs and Gen-3 Fast SiC MOSFETs. The Gen-3 Fast GeneSiC MOSFETs deliver up to 25°C lower case temperature and 3x longer life compared to competitors. The company will also display GaNSense Motor Drives ICs, 650V bi-directional GaN demonstrator, and SiCPAK modules for various high-power applications. According to Yole Group, GaN and SiC products are expected to capture 30% of the power semiconductor market by 2027.
Navitas Semiconductor (NVTS) annuncia sviluppi innovativi nelle tecnologie GaN e SiC che saranno presentati a electronica 2024. Il punto culminante è il primo alimentatore da 8,5 kW al mondo per i centri dati AI, che utilizza i circuiti integrati di potenza GaNSafe e i MOSFET SiC Gen-3 Fast. I MOSFET GeneSiC Gen-3 Fast offrono una temperatura della custodia fino a 25°C inferiore e una vita utile tre volte più lunga rispetto ai concorrenti. L'azienda presenterà anche i circuiti integrati GaNSense Motor Drives, un dimostratore GaN bi-direzionale da 650V e moduli SiCPAK per diverse applicazioni ad alta potenza. Secondo Yole Group, i prodotti GaN e SiC dovrebbero catturare il 30% del mercato dei semiconduttori di potenza entro il 2027.
Navitas Semiconductor (NVTS) anuncia avances innovadores en tecnologías GaN y SiC que se exhibirán en electronica 2024. El aspecto más destacado es la primera fuente de alimentación de 8,5 kW del mundo para centros de datos de IA, que utiliza circuitos integrados de potencia GaNSafe y MOSFETs SiC Gen-3 Fast. Los MOSFETs GeneSiC Gen-3 Fast ofrecen una temperatura de carcasa hasta 25 °C más baja y una vida útil tres veces más larga en comparación con los competidores. La empresa también mostrará circuitos integrados GaNSense Motor Drives, un demostrador GaN bidireccional de 650V y módulos SiCPAK para diversas aplicaciones de alta potencia. Según Yole Group, se espera que los productos de GaN y SiC capturen el 30% del mercado de semiconductores de potencia para 2027.
Navitas Semiconductor (NVTS)는 electronica 2024에서 선보일 GaN 및 SiC 기술의 혁신적인 발전을 발표했습니다. 가장 주목할 만한 점은 AI 데이터 센터를 위한 세계 최초의 8.5 kW 전원 공급 장치로, GaNSafe 전력 IC와 Gen-3 Fast SiC MOSFET를 사용합니다. Gen-3 Fast GeneSiC MOSFET는 경쟁업체에 비해 케이스 온도를 최대 25°C 낮추고 수명을 3배 연장합니다. 이 회사는 또한 GaNSense 모터 드라이브 IC, 650V 양방향 GaN 시연기 및 다양한 고출력 애플리케이션을 위한 SiCPAK 모듈을 전시할 예정입니다. Yole Group에 따르면 GaN 및 SiC 제품은 2027년까지 전력 반도체 시장의 30%를 차지할 것으로 예상됩니다.
Navitas Semiconductor (NVTS) annonce des développements révolutionnaires dans les technologies GaN et SiC qui seront présentés à electronica 2024. Le point fort est la première source d'alimentation de 8,5 kW au monde pour les centres de données AI, utilisant des circuits intégrés de puissance GaNSafe et des MOSFET SiC Gen-3 Fast. Les MOSFET GeneSiC Gen-3 Fast offrent une température de boîtier jusqu'à 25 °C plus basse et une durée de vie trois fois plus longue par rapport aux concurrents. L'entreprise présentera également des circuits intégrés GaNSense Motor Drives, un démonstrateur GaN bidirectionnel de 650V et des modules SiCPAK pour diverses applications à haute puissance. Selon Yole Group, les produits GaN et SiC devraient capturer 30 % du marché des semi-conducteurs de puissance d'ici 2027.
Navitas Semiconductor (NVTS) kündigt bahnbrechende Entwicklungen in den Technologien GaN und SiC an, die auf electronica 2024 präsentiert werden. Höhepunkt ist die weltweit erste 8,5 kW Stromversorgung für KI-Rechenzentren, die GaNSafe-Leistungschips und Gen-3 Fast SiC MOSFETs nutzt. Die Gen-3 Fast GeneSiC MOSFETs liefern bis zu 25 °C niedrigere Gehäusetemperaturen und eine dreimal längere Lebensdauer im Vergleich zu Wettbewerbern. Das Unternehmen wird auch GaNSense Motor Drives ICs, einen 650V bidirektionalen GaN-Demonstrator und SiCPAK-Module für verschiedene Hochleistungsanwendungen vorstellen. Laut Yole Group wird erwartet, dass GaN- und SiC-Produkte bis 2027 30 % des Marktes für Leistungs-Halbleiter einnehmen werden.
- Introduction of industry's first 8.5 kW power supply for AI data centers
- Gen-3 Fast GeneSiC MOSFETs offer 25°C lower case temperature and 3x longer lifespan
- Projected 30% market share of $22bn power semiconductor market by 2027
- None.
Insights
This conference preview showcases significant technological advancements but lacks immediate financial impact. While Navitas' new 8.5 kW AI data center power supply and Gen-3 Fast SiC MOSFETs demonstrate promising innovations, the article primarily focuses on future exhibition plans rather than concrete business developments.
The mention of $22bn/yr legacy silicon power IC market and Yole Group's prediction of
The technological improvements, including
Explore the latest GaN and SiC technologies to ‘Electrify Our World’ & deliver the most efficient and reliable power solutions for AI data centers, EVs, and consumer markets, from 20 W to 20 MW
TORRANCE, Calif., Oct. 28, 2024 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced it will preview several breakthroughs at electronica 2024 (Hall C 3, booth 129, November 12th- 15th).
Aligned with the mission to ‘Electrify our World™’, the “Planet Navitas” booth invites visitors to discover how next-gen GaN and SiC technology enable the latest solutions for AI data centers, EV transportation, renewable energy, industrial drives, and consumer appliances. Each example highlights end-user benefits such as higher power density, increased efficiency, longer range, faster charging, portability, and grid independence, along with a focus on how low-carbon-footprint GaN and SiC technology can save over 6 Gtons/yr CO2 by 2050.
Major technology updates include the world’s first 8.5 kW power supply for AI and hyperscale data centers, using high-power GaNSafe power ICs and Gen-3 Fast SiC MOSFETs.
Enabled by over 20 years of SiC innovation leadership, GeneSiC technology offers world leading performance over temperature to provide cool-running, fast-switching SiC MOSFETs to support up to 3x more powerful AI data centers and faster charging EVs. The Gen-3 Fast GeneSiC MOSFETs are developed using a proprietary ‘trench-assisted planar’ technology offering leading performance, while also providing superior robustness, manufacturability and cost than competition. Gen-3 Fast MOSFETs deliver high-efficiency with high-speed performance, enabling up to 25°C lower case temperature, and up to 3x longer life than SiC products from other vendors.
Also on display will be the company’s latest development of GaNSense™ Motor Drives ICs for home appliance and industrial, 650V bi-directional GaN demonstrator for next generation, highest efficiency and power density solutions, as well as newly released SiCPAK™ modules for high-power markets such as power grid, renewables, EV charging, and UPS.
In addition to the exhibition, the company’s Llew Vaughan-Edmunds will take part in the EETimes panel debate ‘SiC & GaN Technologies - Exploring Advancements, Addressing Challenges’ (November 12th, 2:20 pm local time). This debate will examine both recent and upcoming advances that will increase wide bandgap technologies’ share of the legacy silicon power IC market, which has been valued at
electronica 2024 takes place at Trade Fair Center Messe München, Am Messesee 2, 81829 Munich, from November 12th – 15th. “Planet Navitas” is featured in Hall C3, booth #129.
To schedule a meeting with Navitas at electronica, email euro.sales@navitassemi.com
About Navitas
Navitas Semiconductor (Nasdaq: NVTS) is the only pure-play, next-generation power-semiconductor company, celebrating 10 years of power innovation founded in 2014. GaNFast™ power ICs integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary GeneSiC™ power devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Focus markets include EV, solar, energy storage, home appliance / industrial, data center, mobile, and consumer. Over 250 Navitas patents are issued or pending, with the industry’s first and only 20-year GaNFast warranty. Navitas is the world’s first semiconductor company to be CarbonNeutral®-certified.
Navitas Semiconductor, GaNFast, GaNSense, GeneSiC and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.
Contact Information
Stephen Oliver, VP Corporate Marketing & Investor Relations
ir@navitassemi.com
Llew Vaughan-Edmunds, Sr Director, Product Management & Marketing
info@navitassemi.com
A photo accompanying this announcement is available at https://www.globenewswire.com/NewsRoom/AttachmentNg/da96dc6a-8518-464d-a370-fcd62be6affb
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