Welcome to our dedicated page for Navitas Semiconductor news (Ticker: NVTS), a resource for investors and traders seeking the latest updates and insights on Navitas Semiconductor stock.
Navitas Semiconductor Corporation (Nasdaq: NVTS) is a power semiconductor company focused on gallium nitride (GaN) power ICs and high-voltage silicon carbide (SiC) devices for high-power markets such as AI data centers, performance computing, energy and grid infrastructure, and industrial electrification. The company’s news flow reflects both its technology roadmap and its strategic transition toward these segments, which it refers to as “Navitas 2.0.”
On this page, readers can follow NVTS news related to product announcements, strategic partnerships, capital raises, and investor events. Recent press releases have highlighted ultra-high-voltage GeneSiC™ SiC MOSFET portfolios at 2300V and 3300V, packaging developments such as SiCPAK™ G+ power modules, and the introduction of the company’s AEC‑Plus reliability benchmark for SiC devices. Other updates describe collaborations with partners including GlobalFoundries on U.S.-based GaN technology and manufacturing, GigaDevice on a digital power joint lab, and distribution agreements with Avnet and WT Microelectronics.
Investors and industry observers can also track corporate developments such as private placements of common stock, at-the-market offering activity, leadership changes, and participation in technology and investor conferences. Earnings-related releases, including quarterly financial results and associated outlook commentary, provide additional context on how Navitas is reallocating resources toward high-power applications and adjusting its distribution network.
By reviewing the Navitas news feed, users can see how the company positions its GaNFast™ and GeneSiC™ platforms in emerging high-power markets, how it engages with ecosystem partners, and how its strategic focus evolves over time. This page offers a centralized view of NVTS announcements for those following developments in wide bandgap power semiconductors and related infrastructure markets.
Navitas (Nasdaq: NVTS) unveiled an 800 V–6 V DC-DC power delivery board using GaNFast technology, enabling direct single-stage conversion from 800 V to 6 V. The PDB targets 96.5% peak efficiency at 1 MHz and 2,100 W/in³ power density, removing the 48 V IBC stage and improving rack power density for AI servers.
The design is ultra-low profile (≈20% thinner than a mobile phone), uses 16×650 V GaNFast FETs, and is showcased at NVIDIA GTC 2026 and APEC 2026.
Navitas Semiconductor (Nasdaq: NVTS) named Tonya Stevens as Chief Financial Officer, effective March 30, 2026. Stevens brings over 30 years of finance experience across semiconductor and manufacturing sectors and will oversee financial strategy, investor relations, treasury and Navitas' path to profitability under the "Navitas 2.0" transformation.
She joins from Lattice Semiconductor, having served as Chief Accounting Officer and Interim CFO, and previously held roles at Intel and PricewaterhouseCoopers. Stevens holds a B.S. in Accounting and is a Certified Public Accountant.
Navitas (Nasdaq: NVTS) launched two new 1200 V GeneSiC™ 5th‑generation SiC MOSFET packages: a top‑side cooled QDPAK and a low‑profile TO‑247‑4‑LP. The TAP technology claims ~35% improvement in RDS,ON×QGD FoM and ~25% better QGD/QGS, with VGS,TH >3 V for parasitic turn‑on immunity.
QDPAK offers a 15×21 mm footprint, 2.3 mm height, enhanced creepage and top‑side thermal path; TO‑247‑4‑LP reduces PCB height with asymmetrical leads. RDS(on) options: 6.5 mΩ and 12 mΩ.
Navitas (Nasdaq: NVTS) and EPFL unveiled a 250 kW Solid-State Transformer (SST) demonstrator that converts 3.3 kV AC to 800 V DC using GeneSiC 3300V and 1200V SiC MOSFETs and modules.
The single-stage, modular SST targets higher grid-to-rack efficiency and modularity for next-generation AI data centers; the demo will be exhibited at APEC 22–26 March in San Antonio (Navitas booth #2027).
Navitas (Nasdaq: NVTS) will exhibit at APEC 2026 in San Antonio, March 22–26 (booth #2027), showcasing GaN and SiC power solutions for AI data centers, HPC, grid and industrial electrification.
Highlights include a 10 kW 800V→50V GaN DC-DC brick at 98.5% peak efficiency, 2.1 kW/in³ density, 12 kW, 8.5 kW and 4.5 kW supplies, UHV SiCPAK modules (3300V/2300V/1200V), and compact 240W/300W GaN solutions.
Navitas (Nasdaq: NVTS) will present at the Morgan Stanley Technology, Media & Telecom Conference on March 3, 2026 at the Palace Hotel in San Francisco. President and CEO Chris Allexandre will host a fireside chat at 12:20 p.m. PT and be available for investor meetings that day. A live and archived audio webcast will be available in the company's Events section.
Navitas Semiconductor (Nasdaq: NVTS) reported fourth-quarter and full-year 2025 results, completing a strategic pivot to high-power GaN and SiC markets.
Q4 revenue was $7.3M, GAAP loss from operations $41.4M, cash of $236.9M, and a completed private placement netting $95.6M.
Navitas (Nasdaq: NVTS) launched its 5th-generation GeneSiC Trench-Assisted Planar (TAP) 1200V SiC MOSFET platform on Feb 12, 2026, targeting AI data centers, grid & energy infrastructure, and industrial electrification.
The platform reports a 35% improved RDS,ON × QGD FoM, ~25% better QGD/QGS ratio, AEC-Plus qualification, 3x longer static high-temperature/high-voltage stress testing, and extrapolated gate-oxide reliability >1 million years at 18V/175°C.
Navitas (Nasdaq: NVTS) unveiled a 10 kW all-GaN DC-DC platform for 800 VDC and +/-400 V architectures delivering up to 98.5% peak efficiency, 98.1% full-load efficiency, 1 MHz switching, and 2.1 kW/in³ power density in a full-brick (61×116×11 mm) package.
The production-oriented design uses 650 V and 100 V GaNFast FETs in a three-level half-bridge with synchronous rectification and integrates auxiliary power and control; collaborative evaluations are underway and the platform debuts at APEC, March 22–26, 2026.
Navitas Semiconductor (Nasdaq: NVTS) will report fourth quarter and full year 2025 financial results on Tuesday, February 24, 2026 after the market close. A conference call with President & CEO Chris Allexandre and CFO Todd Glickman is scheduled for 2:00 p.m. PT (5:00 p.m. ET).
Analysts and investors can join by phone (toll free 1-800-715-9871 or 1-646-307-1963, Conference ID 4101022) or via a live and archived webcast with slides on the company investor relations site.