Welcome to our dedicated page for Navitas Semiconductor news (Ticker: NVTS), a resource for investors and traders seeking the latest updates and insights on Navitas Semiconductor stock.
Navitas Semiconductor Corporation (Nasdaq: NVTS) is a power semiconductor company focused on gallium nitride (GaN) power ICs and high-voltage silicon carbide (SiC) devices for high-power markets such as AI data centers, performance computing, energy and grid infrastructure, and industrial electrification. The company’s news flow reflects both its technology roadmap and its strategic transition toward these segments, which it refers to as “Navitas 2.0.”
On this page, readers can follow NVTS news related to product announcements, strategic partnerships, capital raises, and investor events. Recent press releases have highlighted ultra-high-voltage GeneSiC™ SiC MOSFET portfolios at 2300V and 3300V, packaging developments such as SiCPAK™ G+ power modules, and the introduction of the company’s AEC‑Plus reliability benchmark for SiC devices. Other updates describe collaborations with partners including GlobalFoundries on U.S.-based GaN technology and manufacturing, GigaDevice on a digital power joint lab, and distribution agreements with Avnet and WT Microelectronics.
Investors and industry observers can also track corporate developments such as private placements of common stock, at-the-market offering activity, leadership changes, and participation in technology and investor conferences. Earnings-related releases, including quarterly financial results and associated outlook commentary, provide additional context on how Navitas is reallocating resources toward high-power applications and adjusting its distribution network.
By reviewing the Navitas news feed, users can see how the company positions its GaNFast™ and GeneSiC™ platforms in emerging high-power markets, how it engages with ecosystem partners, and how its strategic focus evolves over time. This page offers a centralized view of NVTS announcements for those following developments in wide bandgap power semiconductors and related infrastructure markets.
Navitas (Nasdaq: NVTS) said CEO Chris Allexandre and CFO Tonya Stevens will meet one-on-one with investors and analysts at two upcoming investor conferences in May 2026.
Meetings are scheduled virtually at CJS Securities (May 13, 2026) and in person at J.P. Morgan Global TMC (May 19, 2026) in Boston; requests go through hosting firms' sales representatives.
Navitas Semiconductor (Nasdaq: NVTS) reported first-quarter 2026 results with revenue of $8.6 million, up 18% sequentially, and non-GAAP gross margin of 39.0%. GAAP gross margin was (9.3%) and GAAP operating loss was $27.8 million. The company named Tonya Stevens as CFO and expects Q2 revenue of $10.0 million ± $0.5 million and non-GAAP gross margin of 39.25% ± 75 bps.
Navitas emphasized a strategic pivot to high-power markets (AI data centers, grid, performance computing, industrial electrification) and highlighted product demonstrations including 800V–6V PDBs and a 250 kW solid-state transformer.
Navitas Semiconductor (NASDAQ: NVTS) appointed Davin Lee to its board effective May 4, 2026. Lee will stand for reelection in 2027 as a Class III director and join the Compensation Committee and the Governance and Sustainability Committee.
The board said Lee's 30+ years in power semiconductors supports Navitas' strategic pivot to high-power GaN and SiC markets and its ongoing board refreshment, which targets reducing board size to eight directors at the 2027 annual meeting.
Navitas Semiconductor (Nasdaq: NVTS) will report first quarter 2026 financial results on Tuesday, May 5, 2026, after the market close.
Navitas' President and CEO Chris Allexandre and CFO Tonya Stevens will host a conference call at 2:00 p.m. Pacific Time (5:00 p.m. Eastern Time). A live and archived audio webcast and presentation slides will be available via the company's Investor Relations website.
Navitas Semiconductor (Nasdaq: NVTS) appointed Gregory M. Fischer to its board effective April 13, 2026. Fischer brings over 40 years of semiconductor operating and governance experience and will serve on the Compensation and Executive Steering committees. He will stand for reelection as a Class III director in 2027.
Fischer’s background includes senior roles at Broadcom, Conexant, Rockwell, advisory work since 2021, and board service at Semtech, supporting Navitas’ strategic shift toward high-power GaN and SiC markets.
Navitas (Nasdaq: NVTS) unveiled an 800 V–6 V DC-DC power delivery board using GaNFast technology, enabling direct single-stage conversion from 800 V to 6 V. The PDB targets 96.5% peak efficiency at 1 MHz and 2,100 W/in³ power density, removing the 48 V IBC stage and improving rack power density for AI servers.
The design is ultra-low profile (≈20% thinner than a mobile phone), uses 16×650 V GaNFast FETs, and is showcased at NVIDIA GTC 2026 and APEC 2026.
Navitas Semiconductor (Nasdaq: NVTS) named Tonya Stevens as Chief Financial Officer, effective March 30, 2026. Stevens brings over 30 years of finance experience across semiconductor and manufacturing sectors and will oversee financial strategy, investor relations, treasury and Navitas' path to profitability under the "Navitas 2.0" transformation.
She joins from Lattice Semiconductor, having served as Chief Accounting Officer and Interim CFO, and previously held roles at Intel and PricewaterhouseCoopers. Stevens holds a B.S. in Accounting and is a Certified Public Accountant.
Navitas (Nasdaq: NVTS) launched two new 1200 V GeneSiC™ 5th‑generation SiC MOSFET packages: a top‑side cooled QDPAK and a low‑profile TO‑247‑4‑LP. The TAP technology claims ~35% improvement in RDS,ON×QGD FoM and ~25% better QGD/QGS, with VGS,TH >3 V for parasitic turn‑on immunity.
QDPAK offers a 15×21 mm footprint, 2.3 mm height, enhanced creepage and top‑side thermal path; TO‑247‑4‑LP reduces PCB height with asymmetrical leads. RDS(on) options: 6.5 mΩ and 12 mΩ.
Navitas (Nasdaq: NVTS) and EPFL unveiled a 250 kW Solid-State Transformer (SST) demonstrator that converts 3.3 kV AC to 800 V DC using GeneSiC 3300V and 1200V SiC MOSFETs and modules.
The single-stage, modular SST targets higher grid-to-rack efficiency and modularity for next-generation AI data centers; the demo will be exhibited at APEC 22–26 March in San Antonio (Navitas booth #2027).
Navitas (Nasdaq: NVTS) will exhibit at APEC 2026 in San Antonio, March 22–26 (booth #2027), showcasing GaN and SiC power solutions for AI data centers, HPC, grid and industrial electrification.
Highlights include a 10 kW 800V→50V GaN DC-DC brick at 98.5% peak efficiency, 2.1 kW/in³ density, 12 kW, 8.5 kW and 4.5 kW supplies, UHV SiCPAK modules (3300V/2300V/1200V), and compact 240W/300W GaN solutions.