Navitas Delivers More Power for AI & EV with Extended GaNSafe™ Portfolio
Navitas Semiconductor (Nasdaq: NVTS) has announced the availability of its high-power GaNSafe family in a TOLT (Transistor Outline Leaded Top-side cooling) package. This new offering is designed for demanding, high-power applications such as AI data centers, solar/energy storage, and industrial markets. The GaNSafe family integrates control, drive, sensing, and critical protection features, making it the world's safest GaN with short-circuit protection, 2kV ESD protection, and programmable slew rate control.
The TOLT packaging enhances thermal dissipation, allowing for reduced operating temperature and increased current capability. Suitable for applications from 1 kW to 22 kW, the 650 V GaNSafe in TOLT packaging is available with RDS(ON)MAX ranging from 25 to 98 mΩ. Navitas will also offer reference design platforms for applications including data center power supplies and EV on-board chargers.
Navitas Semiconductor (Nasdaq: NVTS) ha annunciato la disponibilità della sua famiglia di prodotti ad alta potenza GaNSafe in un pacchetto TOLT (Transistor Outline Leaded Top-side cooling). Questa nuova offerta è progettata per applicazioni esigenti ad alta potenza come centri dati AI, stoccaggio dell'energia solare e mercati industriali. La famiglia GaNSafe integra funzionalità di controllo, guida, rilevamento e protezione critica, rendendola il GaN più sicuro al mondo con protezione da cortocircuito, protezione ESD di 2 kV e controllo del tasso di salita programmabile.
Il packaging TOLT migliora la dissipazione termica, consentendo una riduzione della temperatura di esercizio e un aumento della capacità di corrente. Adatta per applicazioni da 1 kW a 22 kW, il GaNSafe da 650 V in packaging TOLT è disponibile con RDS(ON)MAX che varia da 25 a 98 mΩ. Navitas offrirà anche piattaforme di design di riferimento per applicazioni come alimentatori per centri dati e caricabatterie on-board per veicoli elettrici.
Navitas Semiconductor (Nasdaq: NVTS) ha anunciado la disponibilidad de su familia de productos de alta potencia GaNSafe en un paquete TOLT (Transistor Outline Leaded Top-side cooling). Esta nueva oferta está diseñada para aplicaciones exigentes de alta potencia como centros de datos de IA, almacenamiento de energía solar y mercados industriales. La familia GaNSafe integra funciones de control, activación, detección y protección crítica, convirtiéndola en el GaN más seguro del mundo con protección contra cortocircuitos, protección ESD de 2 kV y control de tasa de subida programable.
El embalaje TOLT mejora la disipación térmica, permitiendo una reducción de la temperatura de funcionamiento y un aumento de la capacidad de corriente. Adecuado para aplicaciones de 1 kW a 22 kW, el GaNSafe de 650 V en embalaje TOLT está disponible con RDS(ON)MAX que varía de 25 a 98 mΩ. Navitas también ofrecerá plataformas de diseño de referencia para aplicaciones que incluyen fuentes de alimentación para centros de datos y cargadores a bordo de vehículos eléctricos.
Navitas 반도체(Nasdaq: NVTS)는 고출력 GaNSafe 제품군의 출시에 대해 발표했습니다. 이 제품은 TOLT(Transistor Outline Leaded Top-side cooling) 패키지에 모아져 있습니다. 이 새로운 제품은 AI 데이터 센터, 태양광/ 에너지 저장 및 산업 시장과 같은 까다로운 고출력 애플리케이션을 위해 설계되었습니다. GaNSafe 제품군은 제어, 구동, 센싱 및 중요한 보호 기능을 통합하여 단락 보호, 2kV ESD 보호 및 프로그래머블 슬루 레이트 제어를 제공하는 세계에서 가장 안전한 GaN입니다.
TOLT 패키징은 열 방출을 개선하여 작동 온도를 줄이고 전류 용량을 높입니다. 1kW에서 22kW까지의 애플리케이션에 적합하며, TOLT 패키지의 650V GaNSafe는 RDS(ON)MAX가 25에서 98 mΩ 범위에서 가능합니다. Navitas는 데이터 센터 전원 공급 장치 및 전기차 온보드 충전기를 포함한 애플리케이션에 대한 참조 설계 플랫폼도 제공할 것입니다.
Navitas Semiconductor (Nasdaq: NVTS) a annoncé la disponibilité de sa famille de produits GaNSafe haute puissance dans un emballage TOLT (Transistor Outline Leaded Top-side cooling). Cette nouvelle offre est conçue pour des applications exigeantes à haute puissance telles que centres de données AI, stockage d'énergie solaire et marchés industriels. La famille GaNSafe intègre des fonctionnalités de contrôle, de commande, de détection et de protection critique, ce qui en fait le GaN le plus sûr au monde, avec protection contre les courts-circuits, protection ESD de 2 kV et contrôle de la vitesse de montée programmable.
L'emballage TOLT améliore la dissipation thermique, ce qui permet de réduire la température de fonctionnement et d'augmenter la capacité de courant. Adapté aux applications de 1 kW à 22 kW, le GaNSafe de 650 V dans un emballage TOLT est disponible avec RDS(ON)MAX variant de 25 à 98 mΩ. Navitas proposera également des plateformes de conception de référence pour des applications comprenant les alimentations des centres de données et les chargeurs embarqués pour véhicules électriques.
Navitas Semiconductor (Nasdaq: NVTS) hat die Verfügbarkeit seiner Hochleistungs-GaNSafe-Familie in einem TOLT (Transistor Outline Leaded Top-side cooling) Gehäuse bekannt gegeben. Dieses neue Angebot ist für anspruchsvolle, hochleistungsstarke Anwendungen wie KI-Datenzentren, Solar-/Energiespeicher und industrielle Märkte konzipiert. Die GaNSafe-Familie integriert Steuerungs-, Treiber-, Sensor- und wichtige Schutzfunktionen, wodurch sie das sicherste GaN der Welt mit Kurzschlussschutz, 2-kV-ESD-Schutz und programmierbarem Anstiegssteuerung wird.
Das TOLT-Gehäuse verbessert die Wärmeableitung und ermöglicht eine reduzierte Betriebstemperatur und erhöhte Stromfähigkeit. Es eignet sich für Anwendungen von 1 kW bis 22 kW, wobei der 650 V GaNSafe im TOLT-Gehäuse mit RDS(ON)MAX von 25 bis 98 mΩ erhältlich ist. Navitas wird auch Referenzdesign-Plattformen für Anwendungen wie Stromversorgungen für Datenzentren und On-Board-Ladegeräte für Elektrofahrzeuge anbieten.
- Introduction of GaNSafe family in TOLT package for high-power applications
- Enhanced thermal dissipation and increased current capability
- Integrated protection features for improved reliability and safety
- Suitable for applications from 1 kW to 22 kW
- Offering reference design platforms for data center power supplies and EV on-board chargers
- None.
Insights
The introduction of Navitas' GaNSafe portfolio in TOLT packaging represents a significant advancement in GaN power semiconductor technology. This development addresses critical challenges in high-power applications, particularly for AI data centers, renewable energy and industrial markets.
Key technical improvements include:
- Enhanced thermal dissipation through top-side cooling, potentially increasing power density and efficiency
- Integrated protection features like short-circuit protection and ESD protection, improving reliability
- Simplified 4-pin design, reducing complexity for engineers
- Wide voltage range (650V continuous, 800V transient) suitable for demanding applications
For investors, this could translate to increased market share and revenue potential for Navitas in growing sectors like AI and electric vehicles. The 20-year warranty offering also signals confidence in the product's longevity, which could be attractive to customers in industries requiring long-term reliability.
However, it's important to note that while these advancements are promising, the actual impact on Navitas' financial performance will depend on market adoption and competitive responses. Investors should monitor customer traction and design wins in the coming quarters to gauge the success of this product line extension.
Rugged, cool, extended-power performance with world’s most protected GaN power semiconductor in thermally-enhanced TOLT package
TORRANCE, Calif., Oct. 09, 2024 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced that its high-power GaNSafe family is now available in a TOLT (Transistor Outline Leaded Top-side cooling) package.
The GaNSafe family has been specifically created to serve demanding, high-power applications, such as AI data centers, solar/energy storage, and industrial markets. Navitas 4th generation integrates control, drive, sensing, and critical protection features that enable unprecedented reliability and robustness. GaNSafe is the world’s safest GaN with short-circuit protection (350ns max latency), 2kV ESD protection on all pins, elimination of negative gate drive, and programmable slew rate control. All these features are controlled with 4-pins, allowing the package to be treated like a discrete GaN FET, requiring no VCC pin.
The TOLT packaging enhances thermal dissipation through the top side of the package, allowing heat to be dissipated directly to the heatsink (not through the PCBA). This enables the reduction of operating temperature and increases current capability, resulting in the highest level of system power density, efficiency, and reliability.
“With over 200 million units shipped and supplied with a 20-year warranty, Navitas’ highly integrated high-power GaNSafe ICs are proven to deliver performance and reliability while simplifying Design-IN for systems up to 22kW,” says Charles Bailley, Senior Director of Business Development. “As the most protected, reliable, and safe GaN devices in the industry, GaNSafe took our technology into mainstream applications above 1kW. Now, with the enhanced thermal dissipation of the TOLT package, we are enabling customers to deliver even better performance, efficiency, power density, and reliability in even the most demanding applications.”
Suitable for applications from 1 kW to 22 kW, 650 V GaNSafe in TOLT packaging is available with a range of RDS(ON)MAX from 25 to 98 mΩ. Integrated features and functions include:
- High-speed short-circuit protection, with autonomous ‘detect and protect’ with ultra-fast 350 ns / 50 ns latency.
- Protected, regulated, integrated gate-drive control, with zero gate-source loop inductance for reliable high-speed 2 MHz switching capability to maximize application power density.
- Electrostatic discharge (ESD) protection of 2 kV, compared to zero for discrete GaN transistors.
- 650 V continuous, and 800 V transient voltage capability for extraordinary application conditions.
- Integrated Miller Clamp (no negative gate bias, higher 3rd quadrant efficiency)
- Programmable turn-on and turn-off speeds (dV/dt) to simplify EMI regulatory requirements.
- Simple 4-pin device, allowing the package to be treated like a discrete GaN and requiring no additional VCC pin
- Robust, thermally enhanced packaging: ultra-low RQ_JUNC-AMB and board-level thermal cycling (BLTC) Reliability
In addition to the new ICs, Navitas will be offering reference design platforms based on GaNSafe TOLT for applications including data center power supplies and EV on-board chargers. These system platforms include complete design collateral with fully tested hardware, embedded software, schematics, bill-of-materials, layout, simulation, and hardware test results.
For more information, please contact info@navitassemi.com.
About Navitas
Navitas Semiconductor (Nasdaq: NVTS) is the only pure-play, next-generation power-semiconductor company, celebrating 10 years of power innovation founded in 2014. GaNFast™ power ICs integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary GeneSiC™ power devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Focus markets include EV, solar, energy storage, home appliance / industrial, data center, mobile, and consumer. Over 250 Navitas patents are issued or pending. Navitas offers the industry’s first and only 20-year GaNFast warranty and was the world’s first semiconductor company to be CarbonNeutral®-certified.
Navitas Semiconductor, GaNFast, GaNSense, GeneSiC, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names, and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.
Contact Information:
Llew Vaughan-Edmunds, Sr Director, Product Management & Marketing
info@navitassemi.com
Stephen Oliver, VP Investor Relations
ir@navitassemi.com
A photo accompanying this announcement is available at https://www.globenewswire.com/NewsRoom/AttachmentNg/0a17211f-ce61-49c7-955d-46d60e1ed511
FAQ
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