Navitas Qualifies Leading-edge Gen-3 Fast SiC to Auto-grade (Q101)
Navitas Semiconductor (Nasdaq: NVTS) has announced the release of third-generation automotive-qualified SiC MOSFETs in D2PAK-7L and TOLL surface-mount packages. These Gen-3 Fast SiC MOSFETs, featuring Navitas' proprietary 'trench-assisted planar' technology, offer superior performance for electric vehicle (EV) applications. Key benefits include:
- Up to 25°C lower case temperatures than conventional devices
- Up to 3x longer operating life in high-stress EV environments
- Optimized for fastest switching speed and highest efficiency
- Support for increased power density in EV systems
The new MOSFETs cater to both 400V (650V-rated) and 800V (1,200V-rated) EV architectures, with RDS(ON) ratings ranging from 20 to 55 mΩ and 18 to 135 mΩ respectively. The TOLL package for 400V EVs offers significant improvements in thermal resistance, PCB footprint, and size compared to D2PAK-7L.
Navitas Semiconductor (Nasdaq: NVTS) ha annunciato il lancio di transistor MOSFET SiC di terza generazione qualificati per l'automotive in pacchetti a montaggio superficiale D2PAK-7L e TOLL. Questi MOSFET SiC Fast di Gen-3, dotati della tecnologia proprietaria 'trench-assisted planar' di Navitas, offrono prestazioni superiori per le applicazioni nei veicoli elettrici (EV). I principali vantaggi includono:
- Fino a 25°C in meno nelle temperature del case rispetto ai dispositivi convenzionali
- Fino a 3 volte più lunga durata operativa in ambienti EV ad alta sollecitazione
- Ottimizzati per la massima velocità di commutazione e per l'efficienza più elevata
- Supporto per una maggiore densità di potenza nei sistemi EV
I nuovi MOSFET sono progettati per architetture EV da 400V (con una valutazione di 650V) e 800V (con una valutazione di 1.200V), con valori RDS(ON) che variano da 20 a 55 mΩ e da 18 a 135 mΩ rispettivamente. Il pacchetto TOLL per gli EV da 400V offre notevoli miglioramenti nella resistenza termica, nella dimensione della PCB e nelle dimensioni rispetto al D2PAK-7L.
Navitas Semiconductor (Nasdaq: NVTS) ha anunciado el lanzamiento de transistores MOSFET SiC de tercera generación calificados para automóviles en paquetes de montaje en superficie D2PAK-7L y TOLL. Estos MOSFET SiC Rápidos de Gen-3, que cuentan con la tecnología patentada 'trench-assisted planar' de Navitas, ofrecen rendimiento superior para aplicaciones en vehículos eléctricos (EV). Los principales beneficios incluyen:
- Hasta 25°C más bajas en temperaturas del case en comparación con dispositivos convencionales
- Hasta 3 veces más larga vida operativa en entornos de EV de alta tensión
- Optimizado para la mayor velocidad de conmutación y la eficiencia más alta
- Apoyo a una mayor densidad de potencia en sistemas EV
Los nuevos MOSFET están diseñados para arquitecturas EV de 400V (calificadas a 650V) y 800V (calificadas a 1,200V), con clasificaciones RDS(ON) que varían de 20 a 55 mΩ y de 18 a 135 mΩ respectivamente. El paquete TOLL para EV de 400V ofrece mejoras significativas en resistencia térmica, huella de PCB y tamaño en comparación con D2PAK-7L.
Navitas Semiconductor (Nasdaq: NVTS)는 D2PAK-7L 및 TOLL 표면 장착 패키지에서 자동차용 3세대 자격을 갖춘 SiC MOSFET를 출시한다고 발표했습니다. Navitas의 독점 '트렌치 보조 평면' 기술을 특징으로 하는 이러한 Gen-3 Fast SiC MOSFET는 전기차(EV) 애플리케이션을 위한 우수한 성능을 제공합니다. 주요 이점은 다음과 같습니다:
- 기존 장치보다 최대 25°C 낮은 케이스 온도
- 고압 EV 환경에서 최대 3배 더 긴 운영 수명
- 가장 빠른 스위칭 속도와 최고의 효율성을 위한 최적화
- EV 시스템의 전력 밀도 증가 지원
새로운 MOSFET는 400V(650V 등급) 및 800V(1,200V 등급) EV 아키텍처를 모두 지원하며 RDS(ON) 등급은 각각 20에서 55 mΩ 및 18에서 135 mΩ까지 다양합니다. 400V EV용 TOLL 패키지는 D2PAK-7L에 비해 열 저항, PCB 면적 및 크기에서 상당한 개선을 제공합니다.
Navitas Semiconductor (Nasdaq: NVTS) a annoncé le lancement de MOSFET SiC de troisième génération qualifiés pour l'automobile dans des boîtiers de montage en surface D2PAK-7L et TOLL. Ces MOSFET SiC rapides de Gen-3, dotés de la technologie 'trench-assisted planar' de Navitas, offrent des performances supérieures pour les applications de véhicules électriques (EV). Les principaux avantages incluent :
- Des températures de boîtier jusqu'à 25°C plus basses que celles des dispositifs conventionnels
- Une durée de vie d'exploitation jusqu'à 3 fois plus longue dans des environnements de EV à haute contrainte
- Optimisés pour la vitesse de commutation la plus rapide et la plus haute efficacité
- Support pour une densité de puissance accrue dans les systèmes de EV
Les nouveaux MOSFET sont adaptés aux architectures EV de 400V (avec une notation de 650V) et de 800V (avec une notation de 1,200V), avec des valeurs RDS(ON) allant de 20 à 55 mΩ et de 18 à 135 mΩ respectivement. Le package TOLL pour EV de 400V offre des améliorations significatives en résistance thermique, empreinte PCB et taille par rapport à D2PAK-7L.
Navitas Semiconductor (Nasdaq: NVTS) hat die Einführung von SiC MOSFETs der dritten Generation, die für den Automobilbereich qualifiziert sind, in D2PAK-7L- und TOLL-Oberflächenmontagegehäusen angekündigt. Diese Gen-3 Fast SiC MOSFETs, die mit der proprietären 'trench-assisted planar'-Technologie von Navitas ausgestattet sind, bieten überlegene Leistung für Anwendungen in Elektrofahrzeugen (EV). Zu den wichtigsten Vorteilen gehören:
- Bis zu 25 °C niedrigere Gehäusetemperaturen im Vergleich zu herkömmlichen Geräten
- Bis zu 3-mal längere Lebensdauer in hochbelasteten EV-Umgebungen
- Optimiert für schnellste Schaltgeschwindigkeit und höchste Effizienz
- Unterstützung höherer Leistungsdichte in EV-Systemen
Die neuen MOSFETs sind sowohl für 400V (650V bewertet) als auch für 800V (1.200V bewertet) EV-Architekturen ausgelegt, mit RDS(ON)-Werten von 20 bis 55 mΩ und 18 bis 135 mΩ. Das TOLL-Paket für 400V-EVs bietet im Vergleich zu D2PAK-7L erhebliche Verbesserungen bei der thermischen Widerstandsfähigkeit, der PCB-Fläche und der Größe.
- Release of third-generation automotive-qualified SiC MOSFETs for EV applications
- Up to 25°C lower case temperatures and 3x longer operating life than conventional devices
- Optimized for fastest switching speed and highest efficiency in EV systems
- Demonstrated OBC system solutions up to 22 kW with 3.5 kW/liter power density and over 95.5% efficiency
- TOLL package offers 9% reduction in thermal resistance, 30% smaller PCB footprint, and 60% smaller size than D2PAK-7L
- None.
Insights
The release of Navitas' Gen-3 Fast SiC MOSFETs represents a significant technological advancement in the electric vehicle (EV) component market. This move could potentially strengthen Navitas' market position and drive revenue growth in the rapidly expanding EV sector. The improved performance characteristics, such as 25°C lower case temperatures and up to 3x longer operating life, could lead to increased adoption by EV manufacturers, potentially boosting Navitas' market share. However, the financial impact remains to be seen, as it will depend on the rate of adoption and the company's ability to capitalize on this innovation in a competitive market.
Navitas' Gen-3 Fast SiC MOSFETs offer significant technical advantages over conventional devices. The 'trench-assisted planar' technology enables higher efficiency and faster switching speeds, important for EV applications. The reduced thermal resistance and smaller footprint of the TOLL package are particularly noteworthy, allowing for more compact and efficient designs. These improvements could lead to enhanced EV performance, including better range and faster charging times. The immediate availability of these components for both 400V and 800V architectures positions Navitas well to serve the evolving EV market, potentially giving them a competitive edge in the power semiconductor space.
The release of Navitas' Gen-3 Fast SiC MOSFETs aligns with the growing demand for high-performance EV components. As the global EV market expands, there's an increasing need for more efficient power semiconductors. Navitas' focus on both 400V and 800V architectures is strategic, catering to current and future EV designs. The demonstrated 22 kW OBC system with 3.5 kW/liter power density and over 95.5% efficiency could attract major EV manufacturers looking to improve their vehicles' performance. However, success will depend on Navitas' ability to compete with established players in the automotive semiconductor market and secure design wins with major EV producers. The immediate availability of these components could give Navitas a first-mover advantage in this rapidly evolving sector.
Next-gen silicon carbide (SiC) power semis drive innovation in 400 and 800 V EV architectures
TORRANCE, Calif., Sept. 04, 2024 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today announced the release of a portfolio of third-generation automotive-qualified SiC MOSFETs in D2PAK-7L (TO-263-7) and TOLL (TO-Leadless) surface-mount (SMT) packages.
Navitas’ proprietary ‘trench-assisted planar’ technology provides world-leading performance over temperature and delivers high-speed, cool-running operation for electric vehicle (EV) charging, traction, and DC-DC conversion. With case temperatures up to 25°C lower than conventional devices, Gen-3 Fast SiC offers an operating life up to 3x longer than alternative SiC products, for high-stress EV environments.
Gen-3 Fast MOSFETs are optimized for the fastest switching speed, highest efficiency, and support increased power density in EV applications such as AC compressors, cabin heaters, DC-DC converters, and on-board chargers (OBCs). Navitas’ dedicated EV Design Center has demonstrated leading edge OBC system solutions up to 22 kW with 3.5 kW/liter power density, and over
400 V-rated EV battery architectures are served by the new 650 V Gen-3 Fast MOSFETs featuring RDS(ON) ratings from 20 to 55 mΩ. The 1,200 V ranges from 18 to 135 mΩ and is optimized for 800 V systems.
Both 650 and 1,200 V ranges are AEC Q101-qualified in the traditional SMT D2PAK-7L (TO-263-7) package. For 400 V EVs, the 650 V-rated, surface-mount TOLL package offers a
The automotive-qualified 650 V and 1200 V G3F SiC MOSFET family in D2PAK-7L and TOLL surface mount packages are released and available immediately for purchase. For more information, please contact info@navitassemi.com.
About Navitas
Navitas Semiconductor (Nasdaq: NVTS) is the only pure-play, next-generation power-semiconductor company, celebrating 10 years of power innovation founded in 2014. GaNFast™ power ICs integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary GeneSiC™ power devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Focus markets include EV, solar, energy storage, home appliance / industrial, data center, mobile, and consumer. Over 250 Navitas patents are issued or pending. Navitas offers the industry’s first and only 20-year GaNFast warranty and was the world’s first semiconductor company to be CarbonNeutral®-certified.
Navitas Semiconductor, GaNFast, GaNSense, GeneSiC, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names, and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.
Contact Information:
Llew Vaughan-Edmunds, Sr Director, Product Management & Marketing
info@navitassemi.com
Stephen Oliver, VP Investor Relations
ir@navitassemi.com
A photo accompanying this announcement is available at https://www.globenewswire.com/NewsRoom/AttachmentNg/4f90db45-f60b-4e1b-ad90-0cf756d84ec6
FAQ
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