Navitas to Unveil Breakthrough Advances in GaN and SiC for AI Data Center, EV, and Mobile Applications at APEC 2025
Navitas Semiconductor (NVTS) will showcase its latest advances in GaN and SiC technologies at APEC 2025 in Atlanta from March 16-20. The company will unveil a new 'paradigm in power conversion' during a live-streamed event on March 12th.
Key highlights include the world's first 8.5 kW AI data center power supply achieving 98% efficiency, and the highest power density AI power supply delivering 4.5 kW with 137 W/in3 and over 97% efficiency. The company will also present GaNSlim™, a new generation of integrated GaN power ICs for mobile devices and laptops, and automotive-qualified Gen-3 Fast SiC MOSFETs with trench-assisted planar technology.
The technology showcase demonstrates Navitas' commitment to transitioning from legacy silicon to next-generation power semiconductors, potentially saving over 6,000 megatons of CO2 per year by 2050.
Navitas Semiconductor (NVTS) presenterà i suoi ultimi progressi nelle tecnologie GaN e SiC all'APEC 2025 ad Atlanta dal 16 al 20 marzo. L'azienda svelerà un nuovo 'paradigma nella conversione di potenza' durante un evento in diretta il 12 marzo.
Tra i punti salienti ci sono la prima alimentazione per data center AI da 8,5 kW al mondo che raggiunge un'efficienza del 98%, e la fornitura di potenza AI con la densità di potenza più alta che eroga 4,5 kW con 137 W/in3 e oltre il 97% di efficienza. L'azienda presenterà anche GaNSlim™, una nuova generazione di IC di potenza GaN integrati per dispositivi mobili e laptop, e MOSFET SiC Fast Gen-3 qualificati per automotive con tecnologia planar assistita da trench.
La mostra tecnologica dimostra l'impegno di Navitas nel passaggio dal silicio legacy ai semiconduttori di potenza di nuova generazione, con un potenziale risparmio di oltre 6.000 megatonnellate di CO2 all'anno entro il 2050.
Navitas Semiconductor (NVTS) presentará sus últimos avances en tecnologías GaN y SiC en APEC 2025 en Atlanta del 16 al 20 de marzo. La empresa desvelará un nuevo 'paradigma en la conversión de energía' durante un evento transmitido en vivo el 12 de marzo.
Los aspectos más destacados incluyen la primera fuente de alimentación para centros de datos AI de 8.5 kW en el mundo que alcanza una eficiencia del 98%, y la fuente de alimentación AI de mayor densidad de potencia que entrega 4.5 kW con 137 W/in3 y más del 97% de eficiencia. La empresa también presentará GaNSlim™, una nueva generación de ICs de potencia GaN integrados para dispositivos móviles y laptops, y MOSFETs SiC Fast Gen-3 calificados para automoción con tecnología planar asistida por trench.
La exhibición tecnológica demuestra el compromiso de Navitas con la transición del silicio heredado a los semiconductores de potencia de nueva generación, con un potencial ahorro de más de 6,000 megatoneladas de CO2 al año para 2050.
Navitas Semiconductor (NVTS)는 3월 16일부터 20일까지 애틀랜타에서 열리는 APEC 2025에서 GaN 및 SiC 기술의 최신 발전을 선보일 예정입니다. 회사는 3월 12일 생중계 이벤트에서 '전력 변환의 새로운 패러다임'을 공개할 것입니다.
주요 하이라이트에는 세계 최초의 8.5 kW AI 데이터 센터 전원 공급 장치가 98% 효율성을 달성하며, 가장 높은 전력 밀도의 AI 전원 공급 장치가 4.5 kW를 제공하고 137 W/in3 및 97% 이상의 효율성을 자랑합니다. 회사는 또한 GaNSlim™을 소개할 예정이며, 이는 모바일 장치와 노트북을 위한 새로운 세대의 통합 GaN 전력 IC입니다. 그리고 트렌치 보조 평면 기술을 갖춘 자동차 인증 Gen-3 Fast SiC MOSFET도 발표할 것입니다.
이 기술 전시는 Navitas가 기존 실리콘에서 차세대 전력 반도체로의 전환에 대한 의지를 보여주며, 2050년까지 연간 6,000 메가톤 이상의 CO2를 절감할 수 있는 잠재력을 가지고 있습니다.
Navitas Semiconductor (NVTS) présentera ses dernières avancées dans les technologies GaN et SiC lors de l'APEC 2025 à Atlanta du 16 au 20 mars. L'entreprise dévoilera un nouveau 'paradigme en conversion d'énergie' lors d'un événement diffusé en direct le 12 mars.
Les points forts incluent la première alimentation électrique pour centre de données AI de 8,5 kW au monde atteignant une efficacité de 98%, et la source d'alimentation AI à la plus haute densité de puissance délivrant 4,5 kW avec 137 W/in3 et plus de 97% d'efficacité. L'entreprise présentera également GaNSlim™, une nouvelle génération d'IC de puissance GaN intégrés pour appareils mobiles et ordinateurs portables, ainsi que des MOSFET SiC Fast Gen-3 qualifiés pour l'automobile avec une technologie planar assistée par trench.
La vitrine technologique démontre l'engagement de Navitas à passer du silicium traditionnel aux semi-conducteurs de puissance de nouvelle génération, ce qui pourrait permettre d'économiser plus de 6 000 mégatonnes de CO2 par an d'ici 2050.
Navitas Semiconductor (NVTS) wird seine neuesten Fortschritte in den Technologien GaN und SiC auf der APEC 2025 in Atlanta vom 16. bis 20. März präsentieren. Das Unternehmen wird am 12. März während einer Live-Übertragung ein neues 'Paradigma in der Leistungskonversion' enthüllen.
Zu den wichtigsten Höhepunkten gehört die weltweit erste 8,5 kW AI-Rechenzentrums-Stromversorgung, die eine Effizienz von 98% erreicht, sowie die Stromversorgung mit der höchsten Leistungsdichte, die 4,5 kW bei 137 W/in3 und über 97% Effizienz liefert. Das Unternehmen wird auch GaNSlim™ vorstellen, eine neue Generation integrierter GaN-Leistungs-ICs für mobile Geräte und Laptops, sowie automobilqualifizierte Gen-3 Fast SiC MOSFETs mit trenchunterstützter planar Technologie.
Die Technologiedemonstration zeigt das Engagement von Navitas, von herkömmlichem Silizium zu next-gen Leistungshalbleitern überzugehen, was bis 2050 potenziell über 6.000 Megatonnen CO2 pro Jahr einsparen könnte.
- Development of world's first 8.5 kW AI data center power supply with 98% efficiency
- Achievement of highest power density AI power supply (4.5 kW, 137 W/in3)
- Introduction of new GaNSlim™ integrated power ICs for mobile applications
- Launch of automotive-qualified Gen-3 Fast SiC MOSFETs for EV applications
- None.
Insights
The latest product announcements from Navitas represent a strategic positioning at the intersection of three explosive growth markets: AI infrastructure, electric vehicles, and mobile devices. The breakthrough 8.5kW AI data center power supply with 98% efficiency directly addresses a critical challenge in AI infrastructure scaling, where power consumption and heat management are major bottlenecks. This solution could potentially reduce data center operating costs by millions annually while enabling higher compute density.
The 4.5kW power supply achieving 137 W/in3 power density is particularly significant for AI applications, where rack space is at a premium. This advancement could allow data centers to pack significantly more computing power into the same physical footprint, potentially increasing revenue per square foot for operators while reducing cooling costs.
The new GaNSlim platform represents a strategic move into the high-volume consumer electronics market, with integrated solutions that could accelerate adoption in mobile charging and TV power supplies. This could open up substantial new revenue streams in the sub-500W power segment, where simplification of design and faster time-to-market are important competitive advantages.
The automotive-qualified Gen-3 Fast SiC MOSFETs and SiCPAK modules position Navitas to capture significant market share in the rapidly growing EV sector. The 'trench-assisted planar' technology offers superior thermal performance and reliability, critical factors for automotive applications where safety and longevity are paramount.
The teased 'paradigm shift in power conversion' announcement scheduled for March 12th could potentially represent a step-change in the company's technological capabilities and market position. Historical paradigm shifts in power electronics have typically led to order-of-magnitude improvements in performance or cost, suggesting this could be a significant catalyst for the company's growth trajectory.
TORRANCE, Calif., Feb. 21, 2025 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced it will attend APEC 2025 and highlight the latest advances in GaN and SiC wide bandgap technologies for AI data center EV, and mobile applications. Additionally, Navitas will highlight its latest ‘paradigm in power conversion’, unveiled in a live-streamed press event on the 12th of March.
APEC takes place at Atlanta's Georgia World Congress Center from March 16th to 20th. The company's “Planet Navitas” stand (Booth #1107) will showcase the company’s mission to ‘Electrify our World™’ by advancing the transition from legacy silicon to next-generation, clean energy GaN and SiC power semiconductors. These technologies are designed for high-growth markets that demand the highest efficiency and power density. The shift from silicon to GaN and SiC technologies has the potential to save over 6,000 megatons of CO2 per year by 2050. Recent Navitas breakthroughs that will be highlighted on the stand include:
- Navitas’ breakthrough that will create a paradigm shift in power conversion – full details will be unveiled in a live-streamed press event on the 12th of March.
- World’s First 8.5 kW AI Data Center Power Supply: See the world’s first 8.5 kW OCP power solution achieving
98% efficiency for AI and hyperscale data centers. Featuring high-power GaNSafe™ power ICs and Gen-3 Fast SiC MOSFETs in 3-Phase Interleaved CCM Totem-Pole PFC and 3-Phase LLC topologies to provide the highest efficiency, performance, and lowest component count.
- World’s Highest Power Density AI Power Supply: Navitas delivers efficient 4.5 kW power in the smallest power-supply form-factor for the latest AI GPUs that demand 3x more power per rack. The optimized design uses high-power GaNSafe ICs and Gen-3 Fast SiC MOSFETs enabling the world’s highest power density with 137 W/in3 and over
97% efficiency.
- ‘IntelliWeave’ Patented Digital Control Optimized for AI Data Center Power Supplies: Combined with high-power GaNSafe™ and Gen-3 ‘Fast’ SiC MOSFETs to enable PFC peak efficiencies of
99.3% and reduce power losses by30% compared to existing solutions.
- Mid-voltage GaNFast FETs targeting 48V AI data center power supplies, next-generation EV platforms EV and AI-based robotics, to enable high-frequency, high-efficiency, and high-power density power conversion systems.
- GaNSlim™: Simple. Fast. Integrated: A new generation of highly integrated GaN power ICs that will further simplify and speed the development of small form factor, high-power-density applications by offering the highest level of integration and thermal performance. Target applications include chargers for mobile devices and laptops, TV power supplies, and lighting systems of up to 500W.
- Automotive Qualified (AEC-Q101) Gen-3 Fast SiC MOSFETs with ‘trench-assisted planar’ technology: Enabled by over 20 years of SiC innovation leadership, GeneSiC™ technology leads on performance with the Gen-3 ‘Fast’ SiC MOSFETs with ‘trench-assisted planar’ technology. This proprietary technology provides world-leading performance over temperature, delivering cool-running, fast-switching, and superior robustness to support faster charging EVs and up to 3x more powerful AI data centers.
- SiCPAK™ High-Power Modules – Built for Endurance and Performance: Utilizing industry-leading ‘trench-assisted planar’-gate technology and epoxy-resin potting for increased power cycling and long-lasting reliability, SiCPAK modules offer compact form factors and provide cost-effective, power-dense solutions for applications including EV charging, drives, solar, and energy storage systems (ESS).
- New Advancements in our Leading GaNFast & GeneSiC technology:
- GeneSiC MOSFETs specifically optimized for EV traction modules with additional screening and gold metallization for sintering.
- GaNSense™ motor drive ICs with bi-directional loss-less current sensing, voltage sensing, and temperature protection, further enhancing performance and robustness beyond what is achievable by any discrete GaN or discrete silicon device.
Navitas will participate and present in the Industry Session which showcases the latest work in all areas of power electronics.
Technical Presentations:
Wednesday 19th March
- ‘GaNSlim Power IC & DPAK-4L Package Enables 100W, 100cc, PD3.1 Continuous Power Solution with
95% Efficiency’- 2:20 pm, IS14.3, A411, Tom Ribarich, Sr Dir. Strategic Marketing
- ‘500kHz Inverter Design Using Bidirectional GaN Switches’
- 8:30 am, IS11.1, A403, Jason Zhang, VP Applications & Technical Marketing
- ‘Advancing Power Solutions: Integrating Wide Bandgap Technologies for Next-Generation Applications’
- 1:30 pm – 4:55 pm ET, IS14, Llew Vaughan-Edmunds, Session Chair.
- ‘WBG Converter Design’
- 8:30 am – 11:55 am ET, IS11.1, Jason Zhang, Session Chair.
Thursday 20th March
- ‘Marketing & Technology Trends in Power Electronics’
- 10:10 AM – 11:50 AM ET, Stephen Oliver, Session Chair.
- 10:10 AM – 11:50 AM ET, Stephen Oliver, Session Chair.
To schedule a customer meeting with Navitas, please inquire here.
To schedule a press meeting, please book here (via Calendly)
To schedule an IR meeting, please book here (via Calendly)
About Navitas
Navitas Semiconductor (Nasdaq: NVTS) is the only pure-play, next-generation power-semiconductor company, celebrating 10 years of power innovation founded in 2014. GaNFast™ power ICs integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary GeneSiC™ power devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Focus markets include EV, solar, energy storage, home appliance / industrial, data center, mobile, and consumer. Over 250 Navitas patents are issued or pending, with the industry’s first and only 20-year GaNFast warranty. Navitas is the world’s first semiconductor company to be CarbonNeutral®-certified.
Navitas Semiconductor, GaNFast, GaNSense, GeneSiC, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names, and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.
Contact Information
Llew Vaughan-Edmunds, Sr Director, Product Management & Marketing
info@navitassemi.com
Stephen Oliver, VP Corporate Marketing & Investor Relations
ir@navitassemi.com
A photo accompanying this announcement is available at https://www.globenewswire.com/NewsRoom/AttachmentNg/440b0960-3d04-4971-ab04-797bd1fff72e
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