Navitas Partners with Great Wall for Next Generation 400V-DC Power Architecture for AI Data Centers
Navitas Semiconductor (NVTS) has partnered with Great Wall to develop a groundbreaking 2.5kW ultra-high power density DC-DC converter for AI data centers, powered by Navitas' GaNSense technology. The converter achieves the world's highest power density of 92.36W/cm³, delivering 8x more output power than traditional silicon designs.
The solution features a half-load efficiency of 97.9% and operates within a 320-420 VDC input range, meeting Open Compute Project (OCP) efficiency guidelines. The converter utilizes Navitas' GaNSense NV6169, a 650V, 45 mΩ device that provides 50% more power than previous designs, featuring industry-first capabilities like loss-less current sensing and rapid short-circuit protection.
This advancement supports the emerging trend of 400V independent cabinet architecture in AI data centers, enabling increased GPU computing power while reducing energy consumption and supporting sustainability goals.
Navitas Semiconductor (NVTS) ha collaborato con Great Wall per sviluppare un innovativo convertitore DC-DC ad alta densità di potenza da 2,5 kW per i data center AI, alimentato dalla tecnologia GaNSense di Navitas. Il convertitore raggiunge la massima densità di potenza al mondo di 92,36 W/cm³, offrendo 8 volte più potenza in uscita rispetto ai design tradizionali in silicio.
La soluzione presenta un efficienza a metà carico del 97,9% e opera all'interno di un intervallo di ingresso di 320-420 VDC, rispettando le linee guida di efficienza del Open Compute Project (OCP). Il convertitore utilizza il GaNSense NV6169 di Navitas, un dispositivo da 650V e 45 mΩ che fornisce il 50% di potenza in più rispetto ai design precedenti, con capacità innovative come il rilevamento della corrente senza perdite e la protezione rapida da cortocircuito.
Questo progresso supporta la crescente tendenza dell'architettura a cabinet indipendente da 400V nei data center AI, consentendo un aumento della potenza di calcolo delle GPU riducendo al contempo il consumo energetico e sostenendo gli obiettivi di sostenibilità.
Navitas Semiconductor (NVTS) se ha asociado con Great Wall para desarrollar un innovador convertidor DC-DC de densidad de potencia ultra alta de 2.5 kW para centros de datos de IA, impulsado por la tecnología GaNSense de Navitas. El convertidor alcanza la mayor densidad de potencia del mundo de 92.36 W/cm³, proporcionando 8 veces más potencia de salida que los diseños tradicionales en silicio.
La solución presenta una eficiencia a media carga del 97.9% y opera dentro de un rango de entrada de 320-420 VDC, cumpliendo con las pautas de eficiencia del Open Compute Project (OCP). El convertidor utiliza el GaNSense NV6169 de Navitas, un dispositivo de 650V y 45 mΩ que proporciona un 50% más de potencia que los diseños anteriores, con capacidades pioneras como la detección de corriente sin pérdidas y protección rápida contra cortocircuitos.
Este avance apoya la tendencia emergente de la arquitectura de gabinete independiente de 400V en los centros de datos de IA, permitiendo un aumento en la potencia de computación de GPU mientras se reduce el consumo de energía y se apoyan los objetivos de sostenibilidad.
Navitas Semiconductor (NVTS)는 Great Wall과 협력하여 AI 데이터 센터를 위한 혁신적인 2.5kW 초고밀도 DC-DC 변환기를 개발했습니다. 이 변환기는 Navitas의 GaNSense 기술로 구동됩니다. 변환기는 세계에서 가장 높은 전력 밀도인 92.36W/cm³를 달성하여 전통적인 실리콘 설계보다 8배 더 많은 출력 전력을 제공합니다.
이 솔루션은 반부하 효율 97.9%를 자랑하며 320-420 VDC 입력 범위 내에서 작동하여 Open Compute Project (OCP) 효율성 지침을 충족합니다. 변환기는 Navitas의 GaNSense NV6169를 사용하며, 650V, 45 mΩ 장치로 이전 설계보다 50% 더 많은 전력을 제공합니다. 또한 손실 없는 전류 감지 및 신속한 단락 보호와 같은 업계 최초의 기능을 갖추고 있습니다.
이 발전은 AI 데이터 센터에서 400V 독립 캐비닛 아키텍처의 새로운 추세를 지원하여 GPU 컴퓨팅 성능을 높이고 에너지 소비를 줄이며 지속 가능성 목표를 지원합니다.
Navitas Semiconductor (NVTS) s'est associé à Great Wall pour développer un convertisseur DC-DC à densité de puissance ultra-élevée de 2,5 kW pour les centres de données AI, alimenté par la technologie GaNSense de Navitas. Le convertisseur atteint la plus haute densité de puissance au monde de 92,36 W/cm³, délivrant 8 fois plus de puissance de sortie que les conceptions traditionnelles en silicium.
La solution présente une efficacité à mi-charge de 97,9% et fonctionne dans une plage d'entrée de 320-420 VDC, respectant les directives d'efficacité du Open Compute Project (OCP). Le convertisseur utilise le GaNSense NV6169 de Navitas, un dispositif de 650V et 45 mΩ qui fournit 50% de puissance en plus par rapport aux conceptions précédentes, avec des capacités de pointe telles que la détection de courant sans perte et une protection rapide contre les courts-circuits.
Cette avancée soutient la tendance émergente de l'architecture de cabinet indépendant de 400V dans les centres de données AI, permettant d'augmenter la puissance de calcul des GPU tout en réduisant la consommation d'énergie et en soutenant les objectifs de durabilité.
Navitas Semiconductor (NVTS) hat sich mit Great Wall zusammengetan, um einen bahnbrechenden 2,5 kW Ultra-Hochleistungs-DC-DC-Wandler für KI-Datenzentren zu entwickeln, der von Navitas' GaNSense-Technologie betrieben wird. Der Wandler erreicht die höchste Leistungsdichte der Welt von 92,36 W/cm³ und liefert 8-mal mehr Ausgangsleistung als traditionelle Siliziumdesigns.
Die Lösung bietet eine Halbelastungseffizienz von 97,9% und arbeitet innerhalb eines Eingangsspannungsbereichs von 320-420 VDC, wodurch die Effizienzrichtlinien des Open Compute Project (OCP) erfüllt werden. Der Wandler verwendet Navitas' GaNSense NV6169, ein 650V, 45 mΩ Gerät, das 50% mehr Leistung als frühere Designs liefert und über branchenführende Funktionen wie verlustfreies Stromsensing und schnellen Kurzschlussschutz verfügt.
Dieser Fortschritt unterstützt den aufkommenden Trend der 400V unabhängigen Schrankarchitektur in KI-Datenzentren, wodurch die GPU-Rechenleistung erhöht und gleichzeitig der Energieverbrauch gesenkt wird, um die Nachhaltigkeitsziele zu unterstützen.
- Achieved world's highest power density of 92.36W/cm³, 8x higher than traditional solutions
- Record-breaking 97.9% half-load efficiency
- 50% power output increase compared to prior designs
- Strategic entry into growing AI data center market
- None.
Insights
This partnership marks a significant technical advancement for Navitas' GaN power IC technology in the rapidly expanding AI data center market. The key breakthrough here is the development of a 2.5kW DC-DC converter with
The technical specifications reveal why Navitas' GaNSense NV6169 enables this leap: its 650V rating with 800V peak capability provides crucial headroom for high-power applications, while the 30-nanosecond protection response (6x faster than competitors) addresses critical reliability concerns in data center environments. These parameters directly address the surging power requirements for GPU-intensive AI workloads.
What makes this particularly notable is the alignment with the industry shift toward 400V independent cabinet architecture—a fundamental redesign of data center power delivery driven by AI computing demands. By enabling much smaller module power supplies, Navitas' technology directly translates to more space for GPUs (the limiting factor in AI computation).
The expanded application potential beyond data centers into telecommunications and industrial equipment significantly broadens the addressable market. As power density becomes increasingly critical across these sectors, Navitas' demonstrated 8x improvement positions them at the forefront of this evolution in power semiconductor technology.
This partnership with Great Wall represents tangible commercial validation for Navitas' GaN technology in the strategically important AI infrastructure market. The announcement carries three key implications for investors:
First, it demonstrates market penetration in the high-growth AI data center sector, which is experiencing unprecedented demand for power-efficient solutions to support GPU deployments. By addressing the 400V cabinet architecture trend, Navitas positions itself in a rapidly expanding market segment with significant growth potential.
Second, the 8x power density improvement over silicon alternatives establishes a clear technical differentiation for Navitas in a competitive semiconductor landscape. This performance advantage creates a compelling value proposition that could accelerate adoption across multiple verticals mentioned in the release (data centers, telecommunications, industrial).
Third, the partnership model with established power supply manufacturers like Great Wall creates a scalable go-to-market approach that leverages existing customer relationships. While the announcement doesn't quantify expected volumes or revenue impact, the architecture's alignment with Open Compute Project guidelines suggests potential for broader industry adoption.
For a company with Navitas'
GaNSense™ technology boosts 8x power for AI data centers, telecommunications, and industrial equipment in ultra-high power density DC-DC converters
TORRANCE, Calif., April 03, 2025 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced its GaNSense power ICs will power GreatWall’s latest 2.5kW ultra-high power density DC-DC converter for AI data centers.
The rapid development of AI has imposed higher requirements for computing power on data centers. To accommodate more GPUs for computing, the architecture of 400V independent cabinets will become a new development trend. Module power supplies with small size, high efficiency, and greater independence will free up valuable cabinet space, directly enhance computing power, reduce energy consumption, and contribute to achieving dual-carbon goals.
Great Wall has developed an industry-leading 2.5kW DC-DC converter in 1/4 brick outline with the world’s highest power density of 92.36W/cm³, up to 8 times higher than the output power of traditional silicon designs. With a record half-load efficiency of
This ultra-high power density DC-DC converter is powered by Navitas’ GaNSense NV6169. The 650V, 45 mΩ, delivers
Unlike competing solutions, NV6169 is rated at 650V for nominal operation plus an 800 V peak-rating for robust operation during transient events. As a truly integrated power IC, the GaN gate is fully-protected and the whole device rated at an industry-leading electrostatic-discharge (ESD) specification of 2 kV.
"With its faster switching frequency and higher efficiency, GaN has become a key factor in unlocking the next generation of power supplies. We are very pleased to collaborate with Navitas, an industry leader in GaN technology, and successfully enable this industry-leading ultra-high-power density and ultra-high efficiency DC-DC converter,” said Michael Zhang, head of DC Product Line at Greatwall Power. “We look forward to deepening our collaboration with Navitas to unlock the application of GaN in more fields, continuously improve power supply efficiency to reduce energy consumption, and accelerate the low-carbon transformation of various industries."
"Navitas is deeply honored to cooperate with Great Wall Power to successfully create this ultra-high-power density 2.5 kW DC-DC converter. The profound heritage and innovative strength of Great Wall Power in the power supply field have enabled our GaNFast power ICs to fully demonstrate their advantages,’ said Charles Zha, SVP and GM of Navitas Asia-Pacific. “Navitas firmly believes that continuous cooperation with Great Wall will make GaN technology shine in multiple fields such as AI data centers and telecommunications and promote the industry to develop towards a more efficient and environmentally friendly direction."
About Great Wall
Greatwall Power Technology Co., Ltd. was established in 1989 and has been committed to the research, development, production, and sales in the field of switching power supplies. It is the manufacturer of the first computer power supply in China. Its products cover server power supplies, desktop computer power supplies, communication power supplies, industrial power supplies, brick power supplies, On-Board Charger (OBC), medical power supplies, etc.
With 36 years of experience in power supply development, design, and production, Greatwall Power is one of the largest power supply suppliers in China and one of the main drafters of China's national power supply standards.
Greatwall Power has six R&D centers in Shenzhen, Nanjing, Beijing, Hangzhou, Shanghai, and Taiyuan, with more than 800 R&D personnel. The company continues to invest firmly in R&D and innovation, possessing a solid technical foundation and strong R&D capabilities. It has established key enterprise laboratories for power supply key technologies and CNAS-accredited laboratories and has accumulated many core technologies with independent intellectual property rights, covering many technical fields such as power electronics conversion, software control, and structural technology.
The company will continue to follow the development strategy of "high-end, international, diversified, and intelligent", actively expand overseas, and strive to become a power supply product supplier in the global market and a world-leading technology supplier in the power supply field.
About Navitas
Navitas Semiconductor (Nasdaq: NVTS) is the only pure-play, next-generation power-semiconductor company, celebrating 10 years of power innovation founded in 2014. GaNFast™ power ICs integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary GeneSiC™ power devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Focus markets include AI data centers, EV, solar, energy storage, home appliance / industrial, mobile, and consumer. Over 300 Navitas patents are issued or pending, with the industry’s first and only 20-year GaNFast warranty. Navitas was the world’s first semiconductor company to be CarbonNeutral®-certified.
Navitas Semiconductor, GaNFast, GaNSense, GeneSiC, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names, and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.
Contact Information
Llew Vaughan-Edmunds, Sr Director, Product Management & Marketing
info@navitassemi.com
A photo accompanying this announcement is available at https://www.globenewswire.com/NewsRoom/AttachmentNg/2f3e48cb-9a6a-4abf-b6e7-83b57db242d3
FAQ
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