Navitas’ Latest SiCPAK™ Power Modules Set a New Standard for Unparalleled Reliability & Efficient High-Temperature Performance
Navitas Semiconductor (NVTS) has unveiled its latest SiCPAK™ power modules featuring advanced epoxy-resin potting technology and proprietary trench-assisted planar SiC MOSFET technology. The new 1200V modules demonstrate 5x lower thermal resistance increase after thermal shock testing compared to conventional silicone-gel-filled modules.
Key features include:
- Enhanced reliability in high-humidity environments
- Up to 20% lower losses and cooler operation
- Superior isolation test performance compared to silicone-gel modules
- Available in ratings from 4.6 mΩ to 18.5 mΩ
The modules target multiple applications including EV DC fast chargers, industrial motor drives, power supplies, solar inverters, energy storage systems, industrial welding, and induction heating. The products are immediately available for mass production with optional pre-applied Thermal Interface Material.
Navitas Semiconductor (NVTS) ha presentato i suoi ultimi moduli di potenza SiCPAK™ dotati di una tecnologia avanzata di incapsulamento in resina epossidica e della tecnologia proprietaria di MOSFET SiC planare con trincea assistita. I nuovi moduli da 1200V mostrano un incremento di resistenza termica 5 volte inferiore dopo i test di shock termico rispetto ai moduli tradizionali riempiti con gel di silicone.
Le caratteristiche principali includono:
- Affidabilità migliorata in ambienti ad alta umidità
- Perdite ridotte fino al 20% e funzionamento più fresco
- Prestazioni superiori nei test di isolamento rispetto ai moduli con gel di silicone
- Disponibili con valori nominali da 4,6 mΩ a 18,5 mΩ
I moduli sono destinati a molteplici applicazioni, tra cui caricabatterie rapidi DC per veicoli elettrici, azionamenti di motori industriali, alimentatori, inverter solari, sistemi di accumulo energetico, saldatura industriale e riscaldamento a induzione. I prodotti sono già disponibili per la produzione di massa con materiale termico opzionale pre-applicato.
Navitas Semiconductor (NVTS) ha lanzado sus últimos módulos de potencia SiCPAK™ que incorporan tecnología avanzada de encapsulado con resina epoxi y la tecnología propietaria de MOSFET SiC planar asistida por trinchera. Los nuevos módulos de 1200V muestran un aumento de resistencia térmica 5 veces menor tras pruebas de choque térmico en comparación con los módulos convencionales rellenos de gel de silicona.
Las características clave incluyen:
- Mayor fiabilidad en ambientes de alta humedad
- Hasta un 20% menos de pérdidas y operación más fresca
- Rendimiento superior en pruebas de aislamiento frente a módulos con gel de silicona
- Disponibles en valores nominales desde 4.6 mΩ hasta 18.5 mΩ
Los módulos están dirigidos a múltiples aplicaciones, incluyendo cargadores rápidos DC para vehículos eléctricos, accionamientos de motores industriales, fuentes de alimentación, inversores solares, sistemas de almacenamiento de energía, soldadura industrial y calentamiento por inducción. Los productos están disponibles inmediatamente para producción en masa con material de interfaz térmica opcional preaplicado.
Navitas Semiconductor (NVTS)는 첨단 에폭시 수지 포팅 기술과 독자적인 트렌치 보조 평면 SiC MOSFET 기술이 적용된 최신 SiCPAK™ 전력 모듈을 공개했습니다. 새로운 1200V 모듈은 기존 실리콘 젤 충전 모듈에 비해 열 충격 테스트 후 열 저항 증가가 5배 낮게 나타났습니다.
주요 특징은 다음과 같습니다:
- 고습 환경에서 향상된 신뢰성
- 손실 최대 20% 감소 및 더 낮은 작동 온도
- 실리콘 젤 모듈 대비 우수한 절연 시험 성능
- 4.6 mΩ에서 18.5 mΩ까지 다양한 정격 제공
이 모듈들은 전기차 DC 고속 충전기, 산업용 모터 드라이브, 전원 공급 장치, 태양광 인버터, 에너지 저장 시스템, 산업용 용접 및 유도 가열 등 다양한 응용 분야를 목표로 합니다. 제품은 선택적 사전 적용된 열 인터페이스 소재와 함께 즉시 대량 생산이 가능합니다.
Navitas Semiconductor (NVTS) a dévoilé ses derniers modules de puissance SiCPAK™ intégrant une technologie avancée d’encapsulation en résine époxy et une technologie propriétaire de MOSFET SiC planaire assistée par tranchée. Les nouveaux modules 1200V affichent une augmentation de résistance thermique 5 fois moindre après des tests de choc thermique comparés aux modules classiques remplis de gel de silicone.
Les caractéristiques principales comprennent :
- Fiabilité améliorée en environnements à forte humidité
- Jusqu’à 20 % de pertes en moins et une opération plus fraîche
- Performances supérieures aux tests d’isolation par rapport aux modules en gel de silicone
- Disponibles avec des valeurs nominales de 4,6 mΩ à 18,5 mΩ
Ces modules ciblent de multiples applications, notamment les chargeurs rapides DC pour véhicules électriques, les entraînements moteurs industriels, les alimentations, les onduleurs solaires, les systèmes de stockage d’énergie, la soudure industrielle et le chauffage par induction. Les produits sont immédiatement disponibles pour la production de masse avec un matériau d’interface thermique pré-appliqué en option.
Navitas Semiconductor (NVTS) hat seine neuesten SiCPAK™ Leistungsmodul vorgestellt, die eine fortschrittliche Epoxidharz-Verguss-Technologie und proprietäre trench-unterstützte planare SiC-MOSFET-Technologie nutzen. Die neuen 1200V-Module zeigen nach Thermoschocktests eine 5-fach geringere Zunahme des thermischen Widerstands im Vergleich zu herkömmlichen Modulen mit Silikongel-Füllung.
Wichtige Merkmale sind:
- Verbesserte Zuverlässigkeit in feuchten Umgebungen
- Bis zu 20 % geringere Verluste und kühlerer Betrieb
- Überlegene Isolationsprüfleistung im Vergleich zu Silikongel-Modulen
- Erhältlich in Nennwerten von 4,6 mΩ bis 18,5 mΩ
Die Module richten sich an vielfältige Anwendungen, darunter DC-Schnellladegeräte für Elektrofahrzeuge, industrielle Motorantriebe, Stromversorgungen, Solarwechselrichter, Energiespeichersysteme, industrielle Schweißtechnik und Induktionsheizung. Die Produkte sind sofort für die Massenproduktion mit optional voraufgetragenem Wärmeleitmaterial verfügbar.
- 5x better thermal resistance stability compared to conventional modules
- Up to 20% lower power losses in high-temperature operations
- Superior isolation test performance while conventional modules failed
- Immediate availability for mass production
- None.
Insights
Navitas' new SiC modules deliver 5x better thermal performance, enabling reliability advantages in fast-growing power markets like EV charging and renewables.
Navitas' new SiCPAK™ power modules represent a significant technical advancement in the silicon carbide (SiC) power semiconductor space. The proprietary epoxy-resin potting technology addresses a critical pain point in high-power applications - reliability under thermal stress. The 5x lower thermal resistance shift after thermal shock testing compared to conventional silicone-gel modules is a substantial improvement that directly translates to longer system lifetimes.
What's particularly notable is that these modules maintained acceptable isolation levels where conventional modules failed completely in testing. For industrial customers and EV charging infrastructure developers who face extreme costs from downtime, this reliability enhancement represents meaningful
The technical specifications show Navitas is leveraging its "trench-assisted planar" MOSFET architecture to deliver up to
For a smaller player in the SiC market, differentiated technology is essential to compete against larger rivals like Infineon, STMicroelectronics, and Wolfspeed. These modules, targeting high-growth markets including EV fast charging, solar, and energy storage, position Navitas to potentially gain market share in applications where thermal performance and reliability are paramount.
The critical bottleneck in power electronics for renewable energy and EV charging infrastructure isn't peak performance but rather long-term reliability under real-world conditions. Navitas' new SiCPAK™ modules directly address this challenge through their enhanced thermal stability and isolation performance.
For DCFC (DC Fast Charging) operators, module failures are exceptionally costly - not just in replacement components but in downtime, service calls, and customer dissatisfaction. A 5x improvement in thermal resistance stability translates to significantly reduced failure rates and extended replacement intervals, dramatically improving deployment economics.
Similarly, in solar inverters and energy storage systems, power electronics typically represent the most failure-prone components. The silicon carbide technology's superior performance at high temperatures is particularly valuable for outdoor installations subject to extreme environmental conditions.
The pin-to-pin compatibility with industry-standard modules lowers the barrier to adoption, allowing system designers to upgrade performance without complete redesigns. The optional pre-applied Thermal Interface Material further simplifies assembly processes, potentially reducing manufacturing costs.
What makes this announcement particularly compelling for the clean energy sector is the focus on high-humidity and high-temperature performance. These are precisely the challenging environments where renewable infrastructure often operates. By preventing moisture ingression and maintaining stable performance across wide temperature ranges, these modules could enable more reliable renewable energy and EV charging deployments in areas previously considered problematic from a reliability standpoint.
Advanced low-cost epoxy-resin potting technology enables 5x lower thermal resistance shift for extended system lifetime
TORRANCE, Calif., April 17, 2025 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, announces the release of its latest SiCPAK™ power modules with epoxy-resin potting technology, powered by proprietary trench-assisted planar SiC MOSFET technology, that have been rigorously designed and validated for the most demanding high-power environments, prioritizing reliability and high-temperature performance. Target markets include EV DC fast chargers (DCFC), industrial motor drives, interruptible power supplies (UPS), solar inverters and power optimizers, energy storage systems (ESS), industrial welding, and induction heating.
The new portfolio of 1200V SiCPAK™ power modules, enabled by advanced epoxy-resin potting technology, are engineered to withstand high-humidity environments by preventing moisture ingression and enable stable thermal performance by reducing degradation from power and temperature variations.
Navitas’ SiCPAK™ modules demonstrated 5x lower thermal resistance increase following 1000 cycles of thermal shock testing (-40 C to + 125 C) compared to conventional silicone-gel-filled case-type modules. Furthermore, all silicone-gel-filled modules failed isolation tests while SiCPAK™ epoxy-resin potted modules maintained acceptable isolation levels.
Enabled by over 20 years of SiC innovation leadership, Navitas’ GeneSiC™ ‘trench-assisted planar SiC MOSFET technology’ provides industry-leading performance over temperature, enabling up to
The ‘trench-assisted planar’ technology enables an extremely low RDS(ON) increase versus temperature, which results in the lowest power losses across a wider operating range and offers up to
The 1200V SiCPAK™ power modules have built-in NTC thermistors and are available from 4.6 mΩ to 18.5 mΩ ratings in half-bridge, full-bridge, and 3L-T-NPC circuit configurations. They are pin-to-pin compatible with industry-standard press-fit modules. Additionally, optional pre-applied Thermal Interface Material (TIM) for simplified assembly is available.
Modules are released and immediately available for mass production. Datasheets can be found here or by visiting www.navitassemi.com. For more information, please contact info@navitassemi.com.
About Navitas
Navitas Semiconductor (Nasdaq: NVTS) is the only pure-play, next-generation power-semiconductor company, celebrating 10 years of power innovation founded in 2014. GaNFast™ power ICs integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary GeneSiC™ power devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Focus markets include AI data centers, EV, solar, energy storage, home appliance / industrial, mobile, and consumer. Over 300 Navitas patents are issued or pending, with the industry’s first and only 20-year GaNFast warranty. Navitas was the world’s first semiconductor company to be CarbonNeutral®-certified.
Navitas Semiconductor, GaNFast, GaNSense, GeneSiC, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names, and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.
Contact Information
Llew Vaughan-Edmunds, Sr Director, Product Management & Marketing
info@navitassemi.com
A photo accompanying this announcement is available at https://www.globenewswire.com/NewsRoom/AttachmentNg/6e63ec79-7ffa-44ed-b53f-3b9af2e5c138
FAQ
What are the key advantages of Navitas' new SiCPAK power modules over conventional modules?
What markets and applications is Navitas targeting with the new SiCPAK modules?
What temperature range can Navitas' new SiCPAK modules withstand?
What resistance ratings are available for Navitas' 1200V SiCPAK modules?
