Navitas Announces Automotive Qualification of High-Power GaNSafe™ ICs
Navitas Semiconductor (NVTS) has achieved a significant milestone with its high-power GaNSafe™ ICs receiving both AEC-Q100 and AEC-Q101 automotive qualifications. The company's 4th generation GaNSafe family integrates advanced features including 350ns max latency short-circuit protection, 2kV ESD protection, and programmable slew rate control, all managed through a simplified 4-pin interface.
The qualification validates both discrete power FET stage and IC solution compliance with automotive standards. Navitas' comprehensive reliability report, analyzing over 7 years of production data, demonstrates field failure rates approaching 100 parts per billion (ppb) across more than 250 million shipped units.
In March 2025, Navitas also introduced the first 650V Bi-Directional GaNFast ICs with IsoFast Drivers, enabling single-stage topologies in AC-DC and AC-AC conversion. This innovation promises up to 10% cost savings, 20% energy savings, and 50% size reductions in EV on-board chargers.
Navitas Semiconductor (NVTS) ha raggiunto un traguardo importante con i suoi circuiti integrati GaNSafe™ ad alta potenza, che hanno ottenuto le qualifiche automobilistiche AEC-Q100 e AEC-Q101. La quarta generazione della famiglia GaNSafe integra funzionalità avanzate, tra cui protezione da cortocircuito con latenza massima di 350 ns, protezione ESD da 2 kV e controllo programmabile della velocità di commutazione, il tutto gestito tramite un'interfaccia semplificata a 4 pin.
La qualificazione conferma la conformità sia della fase discreta con FET di potenza sia della soluzione IC agli standard automobilistici. Il rapporto completo di affidabilità di Navitas, che analizza oltre 7 anni di dati di produzione, dimostra tassi di guasto sul campo prossimi a 100 parti per miliardo (ppb) su più di 250 milioni di unità spedite.
Nel marzo 2025, Navitas ha inoltre introdotto i primi circuiti integrati GaNFast Bi-Direzionali da 650V con driver IsoFast, che permettono topologie a stadio singolo nelle conversioni AC-DC e AC-AC. Questa innovazione promette fino al 10% di risparmio sui costi, il 20% di risparmio energetico e una riduzione del 50% delle dimensioni nei caricabatterie di bordo per veicoli elettrici.
Navitas Semiconductor (NVTS) ha alcanzado un hito importante con sus circuitos integrados GaNSafe™ de alta potencia, que han recibido las certificaciones automotrices AEC-Q100 y AEC-Q101. La cuarta generación de la familia GaNSafe integra funciones avanzadas, incluyendo protección contra cortocircuitos con una latencia máxima de 350 ns, protección ESD de 2 kV y control programable de la tasa de cambio, todo gestionado a través de una interfaz simplificada de 4 pines.
La certificación valida el cumplimiento tanto de la etapa discreta con FET de potencia como de la solución IC con los estándares automotrices. El informe integral de confiabilidad de Navitas, que analiza más de 7 años de datos de producción, muestra tasas de fallos en campo cercanas a 100 partes por billón (ppb) en más de 250 millones de unidades enviadas.
En marzo de 2025, Navitas también presentó los primeros circuitos integrados GaNFast bidireccionales de 650V con controladores IsoFast, que permiten topologías de etapa única en conversiones AC-DC y AC-AC. Esta innovación promete hasta un 10% de ahorro en costos, un 20% de ahorro energético y una reducción del 50% en tamaño para cargadores a bordo de vehículos eléctricos.
Navitas Semiconductor (NVTS)는 고출력 GaNSafe™ IC가 AEC-Q100 및 AEC-Q101 자동차 인증을 모두 획득하는 중요한 이정표를 달성했습니다. 회사의 4세대 GaNSafe 제품군은 최대 350ns 지연의 단락 보호, 2kV ESD 보호, 프로그래밍 가능한 슬루율 제어 등 고급 기능을 통합했으며, 모두 간소화된 4핀 인터페이스를 통해 관리됩니다.
이번 인증은 개별 전력 FET 단계와 IC 솔루션 모두가 자동차 표준을 준수함을 입증합니다. Navitas의 포괄적인 신뢰성 보고서는 7년 이상의 생산 데이터를 분석하여 2억 5천만 개 이상 출하된 제품에서 현장 고장률이 10억 분의 100에 가까움을 보여줍니다.
2025년 3월, Navitas는 또한 IsoFast 드라이버가 탑재된 최초의 650V 양방향 GaNFast IC를 출시하여 AC-DC 및 AC-AC 변환에서 단일 단계 토폴로지를 가능하게 했습니다. 이 혁신은 전기차 온보드 충전기에서 최대 10% 비용 절감, 20% 에너지 절감, 50% 크기 감소를 약속합니다.
Navitas Semiconductor (NVTS) a franchi une étape importante avec ses circuits intégrés GaNSafe™ haute puissance ayant obtenu les qualifications automobiles AEC-Q100 et AEC-Q101. La 4e génération de la famille GaNSafe intègre des fonctionnalités avancées, notamment une protection contre les courts-circuits avec une latence maximale de 350 ns, une protection ESD de 2 kV et un contrôle programmable de la vitesse de commutation, le tout géré via une interface simplifiée à 4 broches.
Cette qualification valide la conformité tant de l’étage de puissance à transistor discret que de la solution IC aux normes automobiles. Le rapport complet de fiabilité de Navitas, analysant plus de 7 ans de données de production, démontre un taux de défaillance sur le terrain proche de 100 parties par milliard (ppb) sur plus de 250 millions d’unités expédiées.
En mars 2025, Navitas a également lancé les premiers circuits intégrés GaNFast bidirectionnels 650V avec pilotes IsoFast, permettant des topologies à étage unique dans les conversions AC-DC et AC-AC. Cette innovation promet jusqu’à 10 % d’économies de coûts, 20 % d’économies d’énergie et une réduction de 50 % de la taille des chargeurs embarqués pour véhicules électriques.
Navitas Semiconductor (NVTS) hat einen bedeutenden Meilenstein erreicht: Die Hochleistungs-GaNSafe™-ICs des Unternehmens haben sowohl die AEC-Q100- als auch die AEC-Q101-Automobilqualifikationen erhalten. Die vierte Generation der GaNSafe-Familie integriert fortschrittliche Features wie eine maximale Latenz von 350 ns bei Kurzschlussschutz, 2 kV ESD-Schutz und programmierbare Slew-Rate-Steuerung, die alle über eine vereinfachte 4-Pin-Schnittstelle gesteuert werden.
Die Qualifikation bestätigt die Einhaltung der Automobilstandards sowohl für die diskrete Leistungs-FET-Stufe als auch für die IC-Lösung. Der umfassende Zuverlässigkeitsbericht von Navitas, der über 7 Jahre Produktionsdaten analysiert, zeigt Feldausfallraten von nahezu 100 Teilen pro Milliarde (ppb) bei mehr als 250 Millionen ausgelieferten Einheiten.
Im März 2025 stellte Navitas außerdem die ersten 650V bidirektionalen GaNFast-ICs mit IsoFast-Treibern vor, die einstufige Topologien bei AC-DC- und AC-AC-Wandlungen ermöglichen. Diese Innovation verspricht bis zu 10 % Kosteneinsparungen, 20 % Energieeinsparungen und eine 50 % kleinere Baugröße bei On-Board-Ladegeräten für Elektrofahrzeuge.
- Achieved critical automotive qualifications (AEC-Q100 and AEC-Q101) for GaNSafe ICs
- Demonstrated exceptional reliability with field failure rate near 100 ppb across 250M+ units
- New 650V Bi-Directional GaNFast ICs enable significant cost and efficiency improvements
- Already secured early adoption from leading EV manufacturer
- None.
Insights
Navitas' automotive qualification achievement for high-power GaNSafe ICs marks a significant technical milestone that unlocks the high-value EV power electronics market. This dual qualification to AEC-Q100 and AEC-Q101 standards removes a critical barrier to adoption in automotive applications, particularly for on-board chargers and DC-DC converters.
The reliability metrics are particularly impressive—approaching
Their March 2025 introduction of 650V Bi-Directional GaNFast ICs creates further competitive advantage by enabling single-stage topologies that eliminate bulky components while delivering
This qualification positions Navitas to compete more effectively against traditional silicon and emerging silicon carbide solutions in the rapidly electrifying automotive sector. While this won't translate to immediate revenue, it represents a necessary gateway to accessing the high-value, high-margin automotive market segment where power density and efficiency command premium pricing.
High-power GaNSafe ICs bring production-ready performance to EVs, unlocking unprecedented power density and efficiency for on-board chargers (OBCs) and HV-LV DC-DC converters applications
TORRANCE, Calif., April 15, 2025 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced its high-power GaNSafe™ ICs achieve automotive qualification for both AEC-Q100 and AEC-Q101, showcasing GaN’s next inflection into the automotive market.
Navitas high-power GaNSafe 4th generation family integrates control, drive, sensing, and critical protection features that enable unprecedented reliability and robustness in high-power applications. It is the world’s safest GaN with short-circuit protection (350ns max latency), 2kV ESD protection on all pins, elimination of negative gate drive, and programmable slew rate control. All these features are controlled with 4-pins, allowing the package to be treated like a discrete GaN FET, requiring no VCC pin.
The Automotive Electronics Council (AEC) lists various qualifications focused on failure mechanism-based stress tests for packaged integrated circuits (AEC-Q100) and discrete semiconductors (AEC-Q101) used in automotive applications. Navitas’ GaNSafe™ has been qualified to both standards to ensure that both the discrete power FET stage and the combined IC solution meet these stringent specifications.
To support the qualification, Navitas has created a comprehensive reliability report that analyzes over 7 years of production and field data. It demonstrates their track record, alongside generational and family improvements in robustness and reliability, establishing GaN power ICs as highly reliable and automotive-ready. This reliability report is available to qualified customers.
Navitas’ latest GaN reliability report highlights seven years of production with accelerating volumes exceeding 250 million units, while driving field failure rate towards an impressive 100 parts per billion (ppb).
Additionally in March 2025, Navitas unveiled the world’s first production released 650V Bi-Directional GaNFast ICs with IsoFast Drivers, creating a paradigm shift in power to enable the transition from two-stage to single-stage topologies to further enhance efficiency, power density, and performance in AC-DC and AC-AC conversion. This would allow next-generation single-stage OBCs to provide bi-directional charging in a high-efficiency, extremely compact solution – which eliminates bulky capacitors and input inductors.
A leading EV and solar micro-inverter manufacturer have already begun their implementation of single-stage BDS converters to improve efficiency, size, and cost in their systems. GaNFast-enabled single-stage BDS converters achieve up to
“Our latest reliability report is the culmination of years of innovation and field experience,” said Gene Sheridan, CEO and co-founder of Navitas. “With more than 250 million units shipped, over 2 trillion field devices hours and a cumulative field failure rate that is now approaching 100 parts per billion, we’re leading the charge in making GaN the go-to technology for EV power systems.”
Please contact info@navitassemi.com for further information or visit www.navitassemi.com.
About Navitas
Navitas Semiconductor (Nasdaq: NVTS) is the only pure-play, next-generation power-semiconductor company, celebrating 10 years of power innovation founded in 2014. GaNFast™ power ICs integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary GeneSiC™ power devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Focus markets include AI data centers, EV, solar, energy storage, home appliance / industrial, mobile, and consumer. Over 300 Navitas patents are issued or pending, with the industry’s first and only 20-year GaNFast warranty. Navitas was the world’s first semiconductor company to be CarbonNeutral®-certified.
Navitas Semiconductor, GaNFast, GaNSense, GeneSiC, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names, and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.
Contact Information
Llew Vaughan-Edmunds, Sr Director, Product Management & Marketing
info@navitassemi.com
Photos accompanying this announcement are available at:
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FAQ
What automotive qualifications did Navitas (NVTS) GaNSafe ICs achieve in April 2025?
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