CORRECTION – Navitas Partners with Great Wall Power for Next Generation 400V-DC Power Architecture for AI Data Centers
Navitas Semiconductor (NVTS) has partnered with Great Wall Power to develop a groundbreaking 2.5kW ultra-high power density DC-DC converter for AI data centers, powered by Navitas' GaNSense technology. The converter achieves a world-leading power density of 92.36W/cm³, delivering 8x more power than traditional silicon designs.
The solution features a half-load efficiency of 97.9% and operates within a 320-420 VDC input range, meeting Open Compute Project (OCP) efficiency guidelines. The converter utilizes Navitas' GaNSense NV6169, a 650V, 45 mΩ device that provides 50% more power than previous designs, with industry-first features including loss-less current sensing and rapid short-circuit protection.
This partnership aims to advance 400V-DC power architecture for AI data centers, telecommunications, and industrial equipment, focusing on smaller size, higher efficiency, and greater independence to enhance computing power while reducing energy consumption.
Navitas Semiconductor (NVTS) ha stretto una partnership con Great Wall Power per sviluppare un innovativo convertitore DC-DC da 2.5kW ad altissima densità di potenza per centri dati AI, alimentato dalla tecnologia GaNSense di Navitas. Il convertitore raggiunge una densità di potenza leader mondiale di 92.36W/cm³, fornendo 8 volte più potenza rispetto ai design tradizionali in silicio.
La soluzione presenta un'efficienza a metà carico del 97.9% e opera all'interno di un intervallo di ingresso di 320-420 VDC, rispettando le linee guida di efficienza del Open Compute Project (OCP). Il convertitore utilizza il GaNSense NV6169 di Navitas, un dispositivo da 650V e 45 mΩ che fornisce il 50% in più di potenza rispetto ai design precedenti, con caratteristiche innovative come il rilevamento della corrente senza perdite e una rapida protezione da cortocircuito.
Questa partnership mira a far progredire l'architettura di potenza a 400V-DC per centri dati AI, telecomunicazioni e attrezzature industriali, concentrandosi su dimensioni più ridotte, maggiore efficienza e maggiore indipendenza per migliorare la potenza di calcolo riducendo il consumo energetico.
Navitas Semiconductor (NVTS) se ha asociado con Great Wall Power para desarrollar un innovador convertidor DC-DC de 2.5kW con una densidad de potencia ultra alta para centros de datos de IA, impulsado por la tecnología GaNSense de Navitas. El convertidor logra una densidad de potencia líder mundial de 92.36W/cm³, entregando 8 veces más potencia que los diseños tradicionales de silicio.
La solución presenta una eficiencia a media carga del 97.9% y opera dentro de un rango de entrada de 320-420 VDC, cumpliendo con las pautas de eficiencia del Open Compute Project (OCP). El convertidor utiliza el GaNSense NV6169 de Navitas, un dispositivo de 650V y 45 mΩ que proporciona un 50% más de potencia que los diseños anteriores, con características pioneras que incluyen detección de corriente sin pérdidas y protección rápida contra cortocircuitos.
Esta asociación tiene como objetivo avanzar en la arquitectura de potencia de 400V-DC para centros de datos de IA, telecomunicaciones y equipos industriales, enfocándose en un tamaño más pequeño, mayor eficiencia y mayor independencia para mejorar la potencia de cálculo mientras se reduce el consumo de energía.
Navitas Semiconductor (NVTS)는 Great Wall Power와 협력하여 AI 데이터 센터를 위한 혁신적인 2.5kW 초고밀도 DC-DC 변환기를 개발했습니다. 이 변환기는 Navitas의 GaNSense 기술로 구동되며, 세계 최고 수준의 전력 밀도인 92.36W/cm³를 달성하여 전통적인 실리콘 디자인보다 8배 더 많은 전력을 제공합니다.
이 솔루션은 반부하 효율이 97.9%이며, 320-420 VDC 입력 범위 내에서 작동하여 Open Compute Project (OCP) 효율 지침을 충족합니다. 변환기는 Navitas의 GaNSense NV6169를 사용하며, 650V, 45 mΩ 장치로 이전 디자인보다 50% 더 많은 전력을 제공합니다. 업계 최초의 기능으로는 손실 없는 전류 감지 및 빠른 단락 보호가 포함됩니다.
이번 파트너십은 AI 데이터 센터, 통신 및 산업 장비를 위한 400V-DC 전력 아키텍처를 발전시키는 것을 목표로 하며, 더 작은 크기, 더 높은 효율성 및 더 큰 독립성을 통해 컴퓨팅 성능을 향상시키고 에너지 소비를 줄이는 데 중점을 두고 있습니다.
Navitas Semiconductor (NVTS) s'est associé à Great Wall Power pour développer un convertisseur DC-DC révolutionnaire de 2,5 kW à ultra-haute densité de puissance pour les centres de données AI, alimenté par la technologie GaNSense de Navitas. Le convertisseur atteint une densité de puissance de 92,36W/cm³, offrant 8 fois plus de puissance que les conceptions traditionnelles en silicium.
La solution présente une efficacité à mi-charge de 97,9% et fonctionne dans une plage d'entrée de 320-420 VDC, respectant les directives d'efficacité du Open Compute Project (OCP). Le convertisseur utilise le GaNSense NV6169 de Navitas, un dispositif de 650V et 45 mΩ qui fournit 50% de puissance en plus par rapport aux conceptions précédentes, avec des caractéristiques de pointe telles que la détection de courant sans perte et une protection rapide contre les courts-circuits.
Ce partenariat vise à faire progresser l'architecture d'alimentation 400V-DC pour les centres de données AI, les télécommunications et les équipements industriels, en se concentrant sur une taille plus petite, une efficacité accrue et une plus grande indépendance pour améliorer la puissance de calcul tout en réduisant la consommation d'énergie.
Navitas Semiconductor (NVTS) hat eine Partnerschaft mit Great Wall Power geschlossen, um einen bahnbrechenden 2,5 kW DC-DC-Wandler mit ultra-hoher Leistungsdichte für KI-Datenzentren zu entwickeln, der durch Navitas' GaNSense-Technologie betrieben wird. Der Wandler erreicht eine weltweit führende Leistungsdichte von 92,36W/cm³ und liefert 8-mal mehr Leistung als herkömmliche Silizium-Designs.
Die Lösung bietet eine Halbelastungseffizienz von 97,9% und arbeitet im Eingangsbereich von 320-420 VDC, wodurch die Effizienzrichtlinien des Open Compute Project (OCP) erfüllt werden. Der Wandler nutzt Navitas' GaNSense NV6169, ein 650V, 45 mΩ Gerät, das 50% mehr Leistung als frühere Designs liefert, mit branchenführenden Funktionen wie verlustfreier Strommessung und schneller Kurzschlussschutz.
Diese Partnerschaft zielt darauf ab, die 400V-DC-Stromarchitektur für KI-Datenzentren, Telekommunikation und industrielle Geräte voranzutreiben, wobei der Fokus auf kleinerer Größe, höherer Effizienz und größerer Unabhängigkeit liegt, um die Rechenleistung zu steigern und den Energieverbrauch zu senken.
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GaNSense™ technology boosts 8x power for AI data centers, telecommunications, and industrial equipment in ultra-high power density DC-DC converters
TORRANCE, Calif., April 09, 2025 (GLOBE NEWSWIRE) -- In a release issued under the headline "Navitas Partners with Great Wall for Next Generation 400V-DC Power Architecture for AI Data Centers" on Thursday, April 3rd, 2025, by Navitas Semiconductor Corporation [Nasdaq: NVTS], please note that Great Wall Power was mentioned incorrectly as "Great Wall," "GreatWall," "GreatWall Power," or "Greatwall Power" in the headline, in the release text, and in the photo's caption. Great Wall Power Technology Co., Ltd. was mentioned incorrectly as "Greatwall Power Technology Co., Ltd." The corrected release follows:
Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced its GaNSense power ICs will power Great Wall Power’s latest 2.5kW ultra-high power density DC-DC converter for AI data centers.
The rapid development of AI has imposed higher requirements for computing power on data centers. To accommodate more GPUs for computing, the architecture of 400V independent cabinets will become a new development trend. Module power supplies with small size, high efficiency, and greater independence will free up valuable cabinet space, directly enhance computing power, reduce energy consumption, and contribute to achieving dual-carbon goals.
Great Wall Power has developed an industry-leading 2.5kW DC-DC converter in 1/4 brick outline with the world’s highest power density of 92.36W/cm³, up to 8 times higher than the output power of traditional silicon designs. With a record half-load efficiency of
This ultra-high power density DC-DC converter is powered by Navitas’ GaNSense NV6169. The 650V, 45 mΩ, delivers
Unlike competing solutions, NV6169 is rated at 650V for nominal operation plus an 800 V peak-rating for robust operation during transient events. As a truly integrated power IC, the GaN gate is fully-protected and the whole device rated at an industry-leading electrostatic-discharge (ESD) specification of 2 kV.
"With its faster switching frequency and higher efficiency, GaN has become a key factor in unlocking the next generation of power supplies. We are very pleased to collaborate with Navitas, an industry leader in GaN technology, and successfully enable this industry-leading ultra-high-power density and ultra-high efficiency DC-DC converter,” said Michael Zhang, head of DC Product Line at Great Wall Power. “We look forward to deepening our collaboration with Navitas to unlock the application of GaN in more fields, continuously improve power supply efficiency to reduce energy consumption, and accelerate the low-carbon transformation of various industries."
"Navitas is deeply honored to cooperate with Great Wall Power to successfully create this ultra-high-power density 2.5 kW DC-DC converter. The profound heritage and innovative strength of Great Wall Power in the power supply field have enabled our GaNFast power ICs to fully demonstrate their advantages,’ said Charles Zha, SVP and GM of Navitas Asia-Pacific. “Navitas firmly believes that continuous cooperation with Great Wall Power will make GaN technology shine in multiple fields such as AI data centers and telecommunications and promote the industry to develop towards a more efficient and environmentally friendly direction."
About Great Wall Power
Great Wall Power Technology Co., Ltd. was established in 1989 and has been committed to the research, development, production, and sales in the field of switching power supplies. It is the manufacturer of the first computer power supply in China. Its products cover server power supplies, desktop computer power supplies, communication power supplies, industrial power supplies, brick power supplies, On-Board Charger (OBC), medical power supplies, etc.
With 36 years of experience in power supply development, design, and production, Great Wall Power is one of the largest power supply suppliers in China and one of the main drafters of China's national power supply standards.
Great Wall Power has six R&D centers in Shenzhen, Nanjing, Beijing, Hangzhou, Shanghai, and Taiyuan, with more than 800 R&D personnel. The company continues to invest firmly in R&D and innovation, possessing a solid technical foundation and strong R&D capabilities. It has established key enterprise laboratories for power supply key technologies and CNAS-accredited laboratories and has accumulated many core technologies with independent intellectual property rights, covering many technical fields such as power electronics conversion, software control, and structural technology.
The company will continue to follow the development strategy of "high-end, international, diversified, and intelligent", actively expand overseas, and strive to become a power supply product supplier in the global market and a world-leading technology supplier in the power supply field.
About Navitas
Navitas Semiconductor (Nasdaq: NVTS) is the only pure-play, next-generation power-semiconductor company, celebrating 10 years of power innovation founded in 2014. GaNFast™ power ICs integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary GeneSiC™ power devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Focus markets include AI data centers, EV, solar, energy storage, home appliance / industrial, mobile, and consumer. Over 300 Navitas patents are issued or pending, with the industry’s first and only 20-year GaNFast warranty. Navitas was the world’s first semiconductor company to be CarbonNeutral®-certified.
Navitas Semiconductor, GaNFast, GaNSense, GeneSiC, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names, and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.
Contact Information
Llew Vaughan-Edmunds, Sr Director, Product Management & Marketing
info@navitassemi.com
A photo accompanying this announcement is available at https://www.globenewswire.com/NewsRoom/AttachmentNg/2f3e48cb-9a6a-4abf-b6e7-83b57db242d3
FAQ
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