Navitas Drives a Paradigm Shift in Power with Single-Stage Bi-Directional Switch (BDS) Converters

Rhea-AI Summary

Navitas Semiconductor (Nasdaq: NVTS) has unveiled groundbreaking 650V bi-directional GaNFast ICs and high-speed isolated gate-drivers, enabling a shift from two-stage to single-stage topologies in power conversion. This innovation targets multi-billion dollar markets including EV charging, solar inverters, energy storage, and motor drives.

The new technology consolidates traditional two-stage power converters into a single, high-efficiency stage, eliminating bulky capacitors and input inductors. The solution delivers impressive benefits:

• Up to 10% cost savings
• 20% energy savings
• Up to 50% size reductions

The initial product lineup includes the NV6427 (100 mΩ) and NV6428 (50 mΩ) GaNFast ICs, alongside NV1702 and NV1701 IsoFast drivers. A leading EV and solar micro-inverter manufacturer has already begun implementing these single-stage BDS converters. The bi-directional GaNFast ICs are currently available in mass production, while IsoFast samples are available to qualified customers.

Positive

• Revolutionary technology enabling single-stage power conversion
• Significant cost reduction of up to 10% in power systems
• Energy efficiency improvement of up to 20%
• Size reduction of up to 50% in power systems
• Already adopted by a leading EV and solar micro-inverter manufacturer
• Immediate availability for mass production

Negative

• initial product range with only two GaNFast IC variants
• IsoFast products still in sampling phase, not in full production

News Market Reaction

-8.20%

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-8.20% News Effect

On the day this news was published, NVTS declined 8.20%, reflecting a notable negative market reaction.

Data tracked by StockTitan Argus on the day of publication.

Bi-Directional GaNFast™ plus new IsoFast™ drivers enable advanced ‘single-stage’ topologies to further enhance efficiency, power density, and performance in AC-DC and AC-AC conversion

TORRANCE, Calif., March 13, 2025 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced a latest breakthrough of the world’s first production-released 650 V bi-directional GaNFast ICs and high-speed isolated gate-drivers, creating a paradigm shift in power with single-stage BDS converters, which enables the transition from two-stage to single-stage topologies. Targeted applications range widely and opens up multi-billion dollar market opportunities across EV charging (On-Board Chargers (OBC) and roadside), solar inverters, energy storage and motor drives. The recorded launch event video can be viewed here.

Over 70% of today’s high-voltage power converters use a ‘two-stage’ topology. For example, a typical AC-DC EV OBC implements an initial power-factor-correction (PFC) stage and a follow-on DC-DC stage, with bulky ‘DC-link’ buffering capacitors. The resulting systems are large, lossy, and expensive. Bi-directional GaNFast consolidates the two stages into a single, high-speed, high-efficiency stage and in the process, eliminates the bulky capacitors and input inductors - the ultimate solution in EV OBCs.

A leading EV and solar micro-inverter manufacturer have already begun their implementation of single-stage BDS converters to improve efficiency, size, and cost in their systems. GaNFast-enabled single-stage converters achieve up to 10% cost savings, 20% energy savings, and up to 50% size reductions.

The ultimate power semiconductor switch (transistor) can block voltage and allow current flow in two directions, with the highest efficiency. Navitas’ leadership in GaN innovation has delivered this landmark - the bi-directional GaNFast power IC.

Previously, two discrete, ‘back-to-back’ single switches had to be used, but new bi-directional GaNFast ICs are leading-edge, single-chip designs (monolithic integration) with a merged drain structure, two gate controls, and a patented, integrated, active substrate clamp. One high-speed, high-efficiency bi-directional GaNFast IC replaces up to 4 older switches, increasing system performance while reducing component count, PCB area, and system costs.

The initial 650 V bi-directional GaNFast ICs include NV6427 (100 mΩ R_{SS(ON) typ.}) and NV6428 (50 mΩ R_{SS(ON) typ}) in thermally enhanced, top-side-cooled TOLT-16L (Transistor Outline Leaded Topside-cooled) packaging. The product family will be extended into lower R_SS(ON) offerings in the future.

The new, high-speed IsoFast devices are galvanically isolated, high-speed drivers optimized to drive bi-directional GaN. With 4x higher transient immunity than existing drivers (up to 200 V/ns) and no external negative bias supply needed, they deliver reliable, fast, accurate power control in high-voltage systems. Initial parts are the NV1702 (dual, independent-channel, digital, isolated bi-directional GaN gate driver) and NV1701 (half-bridge GaN digital isolator) in SOIC-16N and SOIC-14W packages.

“These ICs are a truly game-changing and disruptive technology both at the semiconductor and at the system level. They not only deliver improved efficiency, power density, simplicity, and system costs but will also transform multiple multi-billion-dollar markets in the most sustainable way possible.” Gene Sheridan, CEO and co-founder of Navitas commented. “The future of our electrified planet is bi-directional energy flow. From all renewable energy sources, the power grid, and all electrified applications, such as ESS, solar and EVs, energy should flow efficiently & bi-directionally, creating a critical new currency for our future planet. Single-stage BDS converters are the key for this inflection”.

Bi-directional GaNFast ICs (NV6427 and NV6428) are fully qualified and immediately available in mass-production quantities. IsoFast (NV1701 and NV1702) samples are available now to qualified customers.

Single-stage evaluation boards and user guide showcasing both IsoFast and bi-directional GaNFast ICs are available for qualified customers.

Please contact info@navitassemi.com for further information including datasheets, samples, and evaluation boards, or visit www.navitassemi.com.

Navitas will feature bi-directional GaNFast ICs and IsoFast at the APEC 2025 power electronics conference in Atlanta, March 17^th-19^th, booth 1107.

About Navitas
Navitas Semiconductor (Nasdaq: NVTS) is the only pure-play, next-generation power-semiconductor company, celebrating 10 years of power innovation founded in 2014. GaNFast™ power ICs integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary GeneSiC™ power devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Focus markets include AI data centers, EV, solar, energy storage, home appliance / industrial, mobile, and consumer. Over 300 Navitas patents are issued or pending, with the industry’s first and only 20-year GaNFast warranty. Navitas was the world’s first semiconductor company to be CarbonNeutral^®-certified.

Navitas Semiconductor, GaNFast, GaNSense, GeneSiC, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names, and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.

Contact Information
Llew Vaughan-Edmunds, Sr Director, Product Management & Marketing
info@navitassemi.com

A photo accompanying this announcement is available at https://www.globenewswire.com/NewsRoom/AttachmentNg/570bea6c-0e50-43bb-b6cc-0040f46b3b75

FAQ

What efficiency improvements does Navitas' new bi-directional GaNFast technology offer?

The new GaNFast single-stage converters deliver up to 20% energy savings, 10% cost savings, and 50% size reductions compared to traditional two-stage topologies.

Which markets will NVTS's new bi-directional switch converters target?

The technology targets EV charging (On-Board and roadside), solar inverters, energy storage, and motor drives markets.

What are the specifications of NVTS's new bi-directional GaNFast ICs?

The 650V bi-directional GaNFast ICs include NV6427 (100 mΩ RSS(ON)) and NV6428 (50 mΩ RSS(ON)) in TOLT-16L packaging.

When will Navitas' (NVTS) new bi-directional GaNFast ICs be available?

The bi-directional GaNFast ICs are immediately available in mass-production quantities, while IsoFast samples are available to qualified customers.

How does NVTS's new technology improve existing power conversion systems?

It consolidates two-stage conversion into a single stage, eliminating bulky capacitors and input inductors, while reducing component count and PCB area.