Navitas Presents World’s First 8.5kW AI Data Center Power Supply Powered by GaN and SiC
Navitas Semiconductor (NVTS) has unveiled the world's first 8.5 kW power supply unit (PSU) for AI and hyperscale data centers, achieving 98% efficiency through combined GaN and SiC technologies. The PSU features high-power GaNSafe and Gen-3 Fast SiC MOSFETs in 3-phase interleaved PFC and topologies, reducing component count by 25% compared to competitors. The unit operates at 180-264 Vac input, provides 54V output, and maintains a temperature range of -5°C to 45°C. The innovative design addresses power demands for next-generation AI servers, particularly those running NVIDIA's Blackwell GPUs, as currently 95% of data centers lack adequate power support.
Navitas Semiconductor (NVTS) ha svelato la prima unità di alimentazione da 8,5 kW (PSU) al mondo per data center AI e hyperscale, raggiungendo un efficienza del 98% grazie all'uso combinato di tecnologie GaN e SiC. La PSU presenta GaNSafe ad alta potenza e MOSFET SiC Gen-3 Fast in configurazioni PFC interleaved a 3 fasi, riducendo il numero dei componenti del 25% rispetto ai concorrenti. L'unità opera con un input di 180-264 Vac, fornisce un output di 54V e mantiene un intervallo di temperatura da -5°C a 45°C. Il design innovativo risponde alle esigenze di potenza per i server AI di prossima generazione, in particolare quelli che utilizzano le GPU Blackwell di NVIDIA, poiché attualmente il 95% dei data center non dispone di un adeguato supporto energetico.
Navitas Semiconductor (NVTS) ha presentado la primera unidad de suministro de energía de 8.5 kW (PSU) del mundo para centros de datos de IA y hyperscale, logrando una eficiencia del 98% mediante tecnologías combinadas de GaN y SiC. La PSU cuenta con GaNSafe de alta potencia y MOSFETs SiC Gen-3 Fast en configuraciones PFC intercaladas de 3 fases, reduciendo el número de componentes en un 25% en comparación con sus competidores. La unidad opera con una entrada de 180-264 Vac, proporciona una salida de 54V y mantiene un rango de temperatura de -5°C a 45°C. El diseño innovador aborda las demandas de energía para los servidores de IA de próxima generación, especialmente aquellos que ejecutan las GPU Blackwell de NVIDIA, dado que actualmente el 95% de los centros de datos carecen de un soporte de energía adecuado.
Navitas Semiconductor (NVTS)는 AI 및 대규모 데이터 센터를 위한 세계 최초의 8.5 kW 전원 공급 장치 (PSU)를 공개하며, GaN과 SiC 기술의 결합을 통해 98% 효율성을 달성했습니다. 이 PSU는 고출력 GaNSafe와 3상 인터리브드 PFC 및 토폴로지의 Gen-3 Fast SiC MOSFET을 특징으로 하여, 경쟁사에 비해 부품 수를 25% 줄였습니다. 이 장치는 180-264 Vac 입력 범위에서 작동하며, 54V 출력을 제공하고 -5°C에서 45°C 사이의 온도 범위를 유지합니다. 혁신적인 설계는 차세대 AI 서버, 특히 NVIDIA의 Blackwell GPU를 구동하는 서버의 전력 수요를 해결합니다. 현재 95%의 데이터 센터는 충분한 전력 지원이 부족합니다.
Navitas Semiconductor (NVTS) a dévoilé la première unité d'alimentation de 8,5 kW (PSU) au monde pour les centres de données AI et hyperscale, atteignant une efficacité de 98% grâce à l'utilisation combinée des technologies GaN et SiC. La PSU est dotée de GaNSafe haute puissance et de MOSFET SiC Gen-3 Fast dans des topologies PFC intercalaires à 3 phases, réduisant le nombre de composants de 25% par rapport à ses concurrents. L'unité fonctionne avec une entrée de 180-264 Vac, fournit une sortie de 54V et maintient une plage de température de -5°C à 45°C. Le design innovant répond aux exigences en matière de puissance pour les serveurs AI de nouvelle génération, en particulier ceux utilisant les GPU Blackwell de NVIDIA, car actuellement 95% des centres de données manquent de soutien énergétique adéquat.
Navitas Semiconductor (NVTS) hat die weltweit erste 8,5 kW Stromversorgungseinheit (PSU) für AI- und Hyperscale-Datenzentren vorgestellt und dabei eine Effizienz von 98% durch die Kombination von GaN- und SiC-Technologien erreicht. Die PSU verfügt über leistungsstarke GaNSafe- und Gen-3 Fast SiC-MOSFETs in dreiphasigen interleaved PFC-Topologien, wodurch die Anzahl der Komponenten im Vergleich zu Wettbewerbern um 25% reduziert wird. Die Einheit arbeitet mit einem Eingang von 180-264 Vac, liefert 54V Ausgang und hält einen Temperaturbereich von -5°C bis 45°C ein. Das innovative Design berücksichtigt den Leistungsbedarf für Server der nächsten Generation im Bereich AI, insbesondere für solche, die NVIDIAs Blackwell-GPUs betreiben, da derzeit 95% der Rechenzentren nicht über eine angemessene Stromversorgung verfügen.
- Achieved industry-leading 98% efficiency in power supply unit
- Reduced component count by 25% compared to competitors, lowering overall costs
- Addresses critical market need as 95% of data centers currently cannot support latest AI GPU power demands
- None.
Insights
This groundbreaking 8.5kW PSU represents a significant technological leap for AI data center infrastructure. The achieved
The timing is particularly strategic given the power infrastructure gap affecting
The 3-phase topology implementation for both PFC and stages marks a significant technical achievement over traditional 2-phase designs. The integration of GaNSafe technology with 350ns short-circuit protection and 2kV ESD protection on all pins establishes new reliability benchmarks. The broad operating voltage range (180-264 Vac) and temperature window (-5°C to 45°C) demonstrate robust real-world applicability.
The scalability from 1kW to 22kW with RDS(ON)MAX options from 25 to 98 mΩ provides excellent flexibility for various power requirements. The trench-assisted planar technology in Gen-3 Fast SiC MOSFETs shows particular promise for thermal management and switching efficiency.
Next-generation solution achieves
TORRANCE, Calif., Nov. 05, 2024 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced the world’s first 8.5 kW power supply unit (PSU), powered by GaN and SiC technologies to achieve
The AI-optimized 54V output PSU complies with Open Compute Project (OCP) and Open Rack v3 (ORv3) specifications and utilizes high-power GaNSafe and Gen-3 Fast SiC MOSFETs configured in 3-phase interleaved PFC and LLC topologies, to ensure the highest efficiency and performance, with lowest component count. The PSU’s shift to a 3-phase topology for both the PFC and LLC (vs. 2-phase topologies used by competing PSUs) enables the industry’s lowest ripple current and EMI. Furthermore, the PSU reduces the number of GaN and SiC devices by
The 3-Phase LLC topology is enabled by high-power GaNSafe, which is specifically created for demanding, high-power applications, such as AI data centers and industrial markets. Navitas’ 4th generation integrates control, drive, sensing, and critical protection features that enable unprecedented reliability and robustness. GaNSafe is the world’s safest GaN with short-circuit protection (350ns max latency), 2kV ESD protection on all pins, elimination of negative gate drive, and programmable slew rate control. All these features are controlled with 4-pins, allowing the package to be treated like a discrete GaN FET, requiring no VCC pin. Suitable for applications from 1 kW to 22 kW, 650 V GaNSafe in TOLL and TOLT packages are available with a range of RDS(ON)MAX from 25 to 98 mΩ.
The 3-Phase interleaved CCM TP-PFC is powered by Gen-3 Fast SiC MOSFETs with ‘trench-assisted planar’ technology, which has been enabled by over 20 years of SiC innovation leadership and offers world-leading performance over temperature, delivering cool-running, fast-switching, and superior robustness to support faster charging EVs and up to 3x more powerful AI data centers.
“This complete wide bandgap solution of GaN and SiC enables the continuation of Navitas’ AI power roadmap which enables this 8.5kW and plans to drive to 12kW & higher in the near-term”, said Gene Sheridan, CEO and co-founder of Navitas. “As many as
The PSU will be on display for the first time at Electronica 2024 (Hall C 3, booth 129, November 12th- 15th).
To schedule a meeting with Navitas at electronica please email info@navitassemi.com.
About Navitas
Navitas Semiconductor (Nasdaq: NVTS) is the only pure-play, next-generation power-semiconductor company, celebrating 10 years of power innovation founded in 2014. GaNFast™ power ICs integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary GeneSiC™ power devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Focus markets include EV, solar, energy storage, home appliance / industrial, data center, mobile, and consumer. Over 300 Navitas patents are issued or pending, with the industry’s first and only 20-year GaNFast warranty. Navitas is the world’s first semiconductor company to be CarbonNeutral®-certified.
Navitas Semiconductor, GaNFast, GaNSafe, GaNSense, GeneSiC, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names, and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.
Contact Information
Llew Vaughan-Edmunds, Sr Director, Product Management & Marketing
info@navitassemi.com
Stephen Oliver, VP Corporate Marketing & Investor Relations
ir@navitassemi.com
A photo accompanying this announcement is available at https://www.globenewswire.com/NewsRoom/AttachmentNg/656b8303-5214-480f-860e-41c267947a03
FAQ
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