Navitas GaNSlim™ Power ICs Drive Ease-of-use, System Cost, and Energy Savings in Mobile, Consumer, and Home Appliance
Navitas Semiconductor (Nasdaq: NVTS) has announced GaNSlim™, a new generation of highly-integrated gallium nitride (GaN) power ICs. These devices offer the highest level of integration and thermal performance, simplifying and speeding up the development of small form factor, high-power-density applications up to 500 W.
Key features of GaNSlim include:
- Integrated drive, control, and protection
- Integrated EMI control and loss-less current sensing
- High thermal performance proprietary DPAK-4L package
- Ultra-low startup current below 10 µA
- Autonomous turn-on/off slew rate control
- Over-temperature protection and auto sleep-mode
Target applications include chargers for mobile devices and laptops, TV power supplies, and lighting. The NV614x GaNSlim family is rated at 700 V with RDS(ON) ratings from 120 mΩ to 330 mΩ, available for both isolated and non-isolated topologies, and comes with a twenty-year warranty.
Navitas Semiconductor (Nasdaq: NVTS) ha annunciato GaNSlim™, una nuova generazione di circuiti integrati di potenza in nitruro di gallio (GaN) altamente integrati. Questi dispositivi offrono il massimo livello di integrazione e prestazioni termiche, semplificando e accelerando lo sviluppo di applicazioni ad alta densità di potenza e di piccole dimensioni fino a 500 W.
Le caratteristiche principali di GaNSlim includono:
- Guida, controllo e protezione integrati
- Controllo EMI integrato e rilevamento della corrente senza perdite
- Pacchetto DPAK-4L proprietario ad alte prestazioni termiche
- Ultra-basso consumo di corrente all'avvio sotto 10 µA
- Controllo autonomo del tasso di accensione/spegnimento
- Protezione da sovratemperatura e modalità di sleep automatica
Le applicazioni target includono caricabatterie per dispositivi mobili e laptop, alimentatori per TV e illuminazione. La famiglia NV614x GaNSlim è valutata a 700 V con valori RDS(ON) da 120 mΩ a 330 mΩ, disponibile sia per topologie isolate che non isolate, e viene fornita con una garanzia di vent'anni.
Navitas Semiconductor (Nasdaq: NVTS) ha anunciado GaNSlim™, una nueva generación de circuitos integrados de potencia de nitruro de galio (GaN) altamente integrados. Estos dispositivos ofrecen el más alto nivel de integración y rendimiento térmico, simplificando y acelerando el desarrollo de aplicaciones de alta densidad de potencia en factor de forma pequeño de hasta 500 W.
Las características clave de GaNSlim incluyen:
- Control, conducción y protección integrados
- Control de EMI integrado y detección de corriente sin pérdidas
- Paquete DPAK-4L propietario con alto rendimiento térmico
- Ultra-bajo corriente de inicio por debajo de 10 µA
- Control autónomo de la tasa de encendido/apagado
- Protección contra sobrecalentamiento y modo de reposo automático
Las aplicaciones objetivo incluyen cargadores para dispositivos móviles y laptops, fuentes de alimentación para televisores e iluminación. La familia NV614x GaNSlim está clasificada en 700 V con valores de RDS(ON) de 120 mΩ a 330 mΩ, disponible para topologías aisladas y no aisladas, y viene con una garantía de veinte años.
Navitas Semiconductor (Nasdaq: NVTS)은 GaNSlim™을 발표했습니다. 이는 고도로 통합된 질화갈륨(GaN) 전력 IC의 새로운 세대입니다. 이 장치는 최고 수준의 통합 및 열 성능을 제공하여 최대 500W의 소형 고밀도 응용 프로그램의 개발을 간소화하고 가속화합니다.
GaNSlim의 주요 기능은 다음과 같습니다:
- 구동, 제어 및 보호 통합
- EMI 제어 및 손실 없는 전류 감지 통합
- 고열 성능의 독점 DPAK-4L 패키지
- 10 µA 이하의 초저 전류 스타트업
- 자율적인 켜기/끄기 슬루율 제어
- 과열 보호 및 자동 수면 모드
목표 응용 프로그램으로는 모바일 장치 및 노트북용 충전기, TV 전원 공급 장치 및 조명이 포함됩니다. NV614x GaNSlim 시리즈는 700V로 평가되며 RDS(ON) 값은 120 mΩ에서 330 mΩ 사이이며, 절연형 및 비절연형 토폴로지 모두에 사용할 수 있으며 20년 보증이 제공됩니다.
Navitas Semiconductor (Nasdaq: NVTS) a annoncé GaNSlim™, une nouvelle génération de circuits intégrés de puissance en nitrure de gallium (GaN) hautement intégrés. Ces dispositifs offrent le plus haut niveau d'intégration et de performance thermique, simplifiant et accélérant le développement d'applications à facteur de forme réduit et à haute densité de puissance allant jusqu'à 500 W.
Les caractéristiques clés de GaNSlim incluent :
- Contrôle, alimentation et protection intégrés
- Contrôle EMI intégré et détection de courant sans perte
- Boîtier DPAK-4L propriétaire avec haute performance thermique
- Courant de démarrage ultra-bas inférieur à 10 µA
- Contrôle autonome de la montée/descente
- Protection contre la surchauffe et mode veille automatique
Les applications cibles comprennent les chargeurs pour appareils mobiles et ordinateurs portables, les alimentateurs pour téléviseurs et l'éclairage. La famille NV614x GaNSlim est évaluée à 700 V avec des valeurs RDS(ON) allant de 120 mΩ à 330 mΩ, disponible pour des topologies isolées et non isolées, et est livrée avec une garantie de vingt ans.
Navitas Semiconductor (Nasdaq: NVTS) hat GaNSlim™ angekündigt, eine neue Generation von hochintegrierten GaN (Gallium-Nitride) Leistungs-ICs. Diese Geräte bieten das höchste Maß an Integration und thermischer Leistung und erleichtern sowie beschleunigen die Entwicklung von kompakten, hochdichten Leistungsanwendungen bis zu 500 W.
Zu den Hauptmerkmalen von GaNSlim gehören:
- Integrierte Ansteuerung, Kontrolle und Schutz
- Integrierte EMI-Kontrolle und verlustlose Strommessung
- Hochleistungsfähiges DPAK-4L-Gehäuse mit hervorragender Wämreistung
- Ultra-niedriger Startstrom unter 10 µA
- Autonome Steuerung der Einschalt-/Ausschaltzeit
- Übertemperaturschutz und automatischer Schlafmodus
Geeignete Anwendungen sind Ladegeräte für mobile Geräte und Laptops, TV-Netzteile und Beleuchtung. Die NV614x GaNSlim-Familie ist mit 700 V bewertet und bietet RDS(ON)-Werte von 120 mΩ bis 330 mΩ, verfügbar für sowohl isolierte als auch nicht isolierte Topologien, und kommt mit einer zwanzigjährigen Garantie.
- Introduction of GaNSlim™, a highly integrated GaN power IC solution
- Enables simpler, faster, and smaller system designs up to 500 W
- 7 °C lower temperature operation versus conventional alternatives
- Ultra-low startup current below 10 µA
- Twenty-year warranty offered on GaNSlim devices
- Over 50 new projects already identified in the customer pipeline
- None.
Insights
The introduction of Navitas' GaNSlim™ power ICs represents a significant advancement in gallium nitride (GaN) technology for power semiconductors. These highly integrated devices offer several key advantages:
- Simplified design process and faster time-to-market for high-power-density applications
- Improved thermal performance, allowing for up to
7% lower operating temperatures - Integrated features like EMI control and loss-less current sensing, reducing external component requirements
- Ultra-low startup current (
10% µA), enabling compatibility with standard controllers - Proprietary DPAK-4L package optimized for thermal performance and power density
With a power rating of up to
The launch of GaNSlim™ power ICs could have a substantial impact on Navitas' market position and financial performance:
- Expanded addressable market in the sub-
500 W segment across multiple industries - Potential for increased market share due to competitive advantages in size, efficiency and integration
- Over 50 new projects already identified, indicating strong initial market interest
- Twenty-year warranty offering may enhance customer confidence and drive adoption
- Simplified designs and faster time-to-market could lead to quicker revenue realization
However, investors should note that while the technology seems promising, the actual financial impact will depend on successful market penetration and adoption rates. The company's ability to scale production and maintain a competitive edge in the rapidly evolving GaN market will be important for long-term success.
Highly integrated GaN power ICs with autonomous EMI control and loss-less sensing are the industry’s fastest, smallest, and most efficient solution in an optimized DPAK-4L package.
TORRANCE, Calif., Oct. 14, 2024 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, has announced GaNSlim™, a new generation of highly-integrated GaN power ICs that will further simplify and speed the development of small form factor, high-power-density applications by offering the highest level of integration and thermal performance.
GaNSlim enables the simplest, fastest, and smallest system design by integrating drive, control, and protection, with integrated EMI control and loss-less current sensing, all within a high thermal performance proprietary DPAK-4L package. Additionally, with an ultra-low startup current below 10 µA, GaNSlim devices are compatible with industry-standard SOT23-6 controllers and eliminate HV startup.
Integrated features such as loss-less current sensing eliminate external current sensing resistors and optimize system efficiency and reliability. Over-temperature protection ensures system robustness and auto sleep-mode increases light and no-load efficiency. Autonomous turn-on/off slew rate control maximizes efficiency and power density while reducing external component count, system cost and EMI.
GaNSlim features a patented, 4-pin, high-thermal-performance, low-profile, low-inductance, DPAK package. This package enables 7 °C lower temperature operation versus conventional alternatives, supporting high-power-density designs with ratings up to 500 W. Target applications include chargers for mobile devices and laptops, TV power supplies, lighting, etc.
“Our GaN focus is on integrated devices that enable high-efficiency, high-performance power conversion with the simplest designs and the shortest possible time-to-market,” says Reyn Zhan, Sr. Manager of Technical Marketing. “Our new GaNSlim portfolio - built on integration, ease-of-use, and low-cost manufacturing methods, - continues to grow the customer pipeline with over 50 new projects already identified. GaNSlim increases our GaN addressable market by enabling lower system costs compared to silicon designs for many applications, targeting applications under 500 W across mobile, consumer and home appliance.”
Devices in the NV614x GaNSlim family are rated at 700 V with RDS(ON) ratings from 120 mΩ to 330 mΩ and are available in versions optimized for both isolated and non-isolated topologies.
As with other Navitas GaN ICs, GaNSlim devices are supplied with an industry-leading twenty-year warranty, while demo boards for QR flyback, single-stage PFC, boost PFC plus QR flyback and TV power supply designs allow for rapid evaluation and selection of the optimum device for a given application.
For more information, please contact info@navitassemi.com
About Navitas
Navitas Semiconductor (Nasdaq: NVTS) is the only pure-play, next-generation power-semiconductor company, celebrating 10 years of power innovation founded in 2014. GaNFast™ power ICs integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary GeneSiC™ power devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Focus markets include EV, solar, energy storage, home appliance / industrial, data center, mobile, and consumer. Over 250 Navitas patents are issued or pending, with the industry’s first and only 20-year GaNFast warranty. Navitas is the world’s first semiconductor company to be CarbonNeutral®-certified.
Navitas Semiconductor, GaNFast, GeneSiC, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names, and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.
Contact Information:
Llew Vaughan-Edmunds, Sr Director, Product Management & Marketing
info@navitassemi.com
Stephen Oliver, VP Investor Relations
ir@navitassemi.com
A photo accompanying this announcement is available at https://www.globenewswire.com/NewsRoom/AttachmentNg/3ea99628-5b74-4850-8e8e-c2192d92858d
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