Navitas Powers Expanded Samsung Galaxy Smartphone Portfolio
Navitas Semiconductor (Nasdaq: NVTS) announced expanded adoption of its GaNFast™ gallium nitride (GaN) power ICs by Samsung. Initially used in flagship Galaxy S22, S23, and S24 models, GaNFast ICs are now incorporated in mainstream Galaxy A series and the innovative Galaxy Z Fold6 and Z Flip6 smartphones.
GaN technology offers significant advantages over legacy silicon, including 20x faster operation, enabling chargers that are 3x more powerful and 3x faster, while being half the size and weight. The new 25W charger (EP-T2510) features energy-saving technology that reduces standby losses by 75% to only 5 mW. This aligns with Navitas' environmental initiatives, as each GaNFast IC saves 4 kg of CO2 compared to legacy silicon chips.
Navitas Semiconductor (Nasdaq: NVTS) ha annunciato un'adozione ampliata dei suoi IC di potenza in nitruro di gallio (GaN), chiamati GaNFast™, da parte di Samsung. Inizialmente utilizzati nei modelli di punta Galaxy S22, S23 e S24, gli IC GaNFast sono ora incorporati anche nella serie Galaxy A e negli innovativi smartphone Galaxy Z Fold6 e Z Flip6.
La tecnologia GaN offre vantaggi significativi rispetto al silicio tradizionale, tra cui una operazione 20 volte più veloce, permettendo caricabatterie che sono 3 volte più potenti e 3 volte più rapidi, pur essendo la metà delle dimensioni e del peso. Il nuovo caricabatterie da 25W (EP-T2510) presenta una tecnologia di risparmio energetico che riduce le perdite in standby del 75%, arrivando a soli 5 mW. Questo si allinea con le iniziative ambientali di Navitas, poiché ogni IC GaNFast consente di risparmiare 4 kg di CO2 rispetto ai chip in silicio tradizionali.
Navitas Semiconductor (Nasdaq: NVTS) anunció una adopción ampliada de sus circuitos integrados de potencia de nitruro de galio (GaN), llamados GaNFast™, por parte de Samsung. Inicialmente utilizados en los modelos insignia Galaxy S22, S23 y S24, los circuitos integrados GaNFast ahora están incorporados en la serie Galaxy A y en los innovadores smartphones Galaxy Z Fold6 y Z Flip6.
La tecnología GaN ofrece ventajas significativas sobre el silicio tradicional, incluyendo una operación 20 veces más rápida, lo que permite cargadores que son 3 veces más poderosos y 3 veces más rápidos, mientras que son la mitad del tamaño y peso. El nuevo cargador de 25W (EP-T2510) cuenta con tecnología de ahorro de energía que reduce las pérdidas en espera en un 75% a solo 5 mW. Esto se alinea con las iniciativas medioambientales de Navitas, ya que cada circuito integrado GaNFast ahorra 4 kg de CO2 en comparación con los chips de silicio tradicionales.
Navitas 반도체(Nasdaq: NVTS)는 삼성의 갤륨 질화물(GaN) 전력 IC인 GaNFast™의 채택이 확대되었다고 발표했습니다. 처음에는 갤럭시 S22, S23, S24 기종에서 사용되었으나, 이제 GaNFast IC는 갤럭시 A 시리즈와 혁신적인 갤럭시 Z Fold6 및 Z Flip6 스마트폰에도 포함되었습니다.
GaN 기술은 기존 실리콘에 비해 20배 더 빠른 작동을 포함하여 많은 장점을 제공합니다. 이를 통해 3배 더 강력하고 3배 더 빠른 충전기를 가능하게 하며, 크기와 무게는 절반입니다. 새로운 25W 충전기(EP-T2510)는 대기 전력을 75% 줄여 5mW로 낮추는 에너지 절약 기술이 특징입니다. 이는 Navitas의 환경 이니셔티브와 일치하며, 각 GaNFast IC는 기존 실리콘 칩에 비해 4kg의 CO2를 절약합니다.
Navitas Semiconductor (Nasdaq: NVTS) a annoncé une adoption élargie de ses circuits intégrés de puissance en nitrure de gallium (GaN), appelés GaNFast™, par Samsung. Initialement utilisés dans les modèles phares Galaxy S22, S23 et S24, les circuits intégrés GaNFast sont désormais intégrés dans la série Galaxy A, ainsi que dans les smartphones innovants Galaxy Z Fold6 et Z Flip6.
La technologie GaN offre des avantages significatifs par rapport au silicium traditionnel, notamment un fonctionnement 20 fois plus rapide, permettant des chargeurs qui sont 3 fois plus puissants et 3 fois plus rapides, tout en étant deux fois plus petits et légers. Le nouveau chargeur de 25W (EP-T2510) présente une technologie d'économie d'énergie qui réduit les pertes en veille de 75% à seulement 5 mW. Ceci est en accord avec les initiatives environnementales de Navitas, car chaque circuit intégré GaNFast permet d'économiser 4 kg de CO2 par rapport aux puces en silicium traditionnelles.
Navitas Semiconductor (Nasdaq: NVTS) hat eine erweiterte Annahme seiner GaNFast™ Gallium-Nitrid (GaN) Leistungschips durch Samsung angekündigt. Ursprünglich in den Flaggschiff-Modellen Galaxy S22, S23 und S24 verwendet, sind GaNFast ICs nun auch in der Mainstream Galaxy A-Serie sowie in den innovativen Galaxy Z Fold6 und Z Flip6 Smartphones integriert.
Die GaN-Technologie bietet erhebliche Vorteile gegenüber herkömmlichem Silikon, einschließlich einer 20-fach schnelleren Betriebsweise, wodurch Ladegeräte 3-mal leistungsstarker und 3-mal schneller werden, während sie nur halb so groß und schwer sind. Das neue 25W Ladegerät (EP-T2510) verfügt über energieeinsparende Technologie, die den Standby-Verlust um 75% auf nur 5 mW reduziert. Dies steht im Einklang mit den Umweltinitiativen von Navitas, da jedes GaNFast IC 4 kg CO2 im Vergleich zu herkömmlichen Silizium-Chips einspart.
- Expanded adoption of GaNFast ICs by Samsung across multiple smartphone series
- GaN technology enables 3x more powerful and 3x faster charging in half the size and weight
- New 25W charger reduces standby losses by 75% to only 5 mW
- Each GaNFast IC saves 4 kg of CO2 compared to legacy silicon chips
- None.
The expansion of Navitas' GaNFast technology across Samsung's smartphone portfolio marks a significant shift in power semiconductor adoption. This move from flagship to mainstream models indicates growing confidence in GaN technology and its potential to become the new standard in mobile device charging.
The 75% reduction in standby power consumption aligns with
Long-term, this expanded partnership could strengthen Navitas' market position, potentially leading to increased revenue and market share in the fast-growing GaN semiconductor space.
Navitas' claim that each GaNFast IC saves 4 kg of CO2 compared to legacy silicon chips is noteworthy. With Samsung's high-volume production, this could translate to significant cumulative CO2 reductions in the electronics industry.
The 75% reduction in standby power losses to just 5 mW is a substantial improvement. Considering the millions of chargers that Samsung produces annually, this could result in measurable energy savings on a global scale.
This partnership exemplifies how technological innovation can drive sustainability in consumer electronics. It may pressure competitors to adopt similar eco-friendly technologies, potentially accelerating the industry's transition towards more sustainable practices.
The expansion of GaNFast technology from Samsung's flagship models to the mainstream Galaxy A series and foldable devices signifies a broader market acceptance of this technology. This could accelerate the adoption curve for GaN in the smartphone industry, potentially leading to a faster obsolescence of silicon-based chargers.
With the global smartphone market shipping over 1 billion units annually, this expanded partnership positions Navitas to capture a larger share of the power semiconductor market. The inclusion in Samsung's foldable devices, a growing segment with higher profit margins, could boost Navitas' revenue potential.
Investors should monitor how this partnership impacts Navitas' market share and revenue growth in upcoming quarters, as well as any similar announcements from competitors in response to this development.
Next-gen GaNFast™ gallium nitride power ICs now fast-charge Samsung’s Galaxy Series-A, Galaxy Z Fold6 and Galaxy Z Flip6 phones
TORRANCE, Calif., Aug. 05, 2024 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today announced that Samsung had expanded adoption of Navitas’ GaNFast ICs from the original flagship Galaxy S22, S23 and S24 to the mainstream Galaxy A, and revolutionary Galaxy Z Fold6 and Galaxy Z Flip6 smartphones with enhanced Galaxy AI features.
GaN runs up to 20x faster than legacy silicon and enables chargers up to 3x more power and 3x faster charging in half size and weight. GaNFast power ICs enable high-frequency, high-efficiency power conversion, achieving up to a
The new 25W charger (EP-T2510) features new energy-saving technology to reduce standby losses by
“Since enabling the world’s first production GaN charger in 2018, Navitas has pioneered and leads the adoption of GaN to replace legacy silicon chips,” noted David Carroll, Sr. VP Worldwide Sales for Navitas. “Our production partnership with Samsung dates back to the Galaxy S22 Ultra, and today’s announcement reflects the dramatic expansion of GaN from niche, flagship designs to adoption in high-volume, mainstream phones.”
About Navitas
Navitas Semiconductor (Nasdaq: NVTS) is the only pure-play, next-generation power-semiconductor company, celebrating 10 years of power innovation founded in 2024. GaNFast™ power ICs integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary GeneSiC™ power devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Focus markets include EV, solar, energy storage, home appliance / industrial, data center, mobile and consumer. Over 250 Navitas patents are issued or pending. Navitas has the industry’s first and only 20-year GaNFast warranty, and was the world’s first semiconductor company to be CarbonNeutral®-certified.
Navitas Semiconductor, GaNFast, GaNSense, GeneSiC and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.
Contact Information
Stephen Oliver, VP Corporate Marketing & Investor Relations
ir@navitassemi.com
A photo accompanying this announcement is available at https://www.globenewswire.com/NewsRoom/AttachmentNg/4bd484b0-b0ea-4ea8-ba38-1babb3eb24ee
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