Navitas Overcomes AI Challenges with World’s Highest Power Density Data Center Design
Navitas Semiconductor (Nasdaq: NVTS) has unveiled a groundbreaking 4.5 kW AI data center power supply reference design, featuring optimized GaNSafe™ and Gen-3 'Fast' (G3F) SiC power components. This design achieves the world's highest power density at 137 W/in3 with over 97% efficiency, addressing the increasing power demands of next-generation AI GPUs like NVIDIA's Blackwell B100 and B200.
The design combines 650 V G3F SiC MOSFETs for the PFC stage and 650 V GaNSafe power ICs for the stage, exploiting the strengths of each semiconductor technology. This innovation enables higher frequency operation, cooler performance, and improved reliability. The company reports over 30 data center customer projects in development, potentially driving millions in GaN and SiC revenue from 2024 into 2025.
Navitas Semiconductor (Nasdaq: NVTS) ha presentato un innovativo design di riferimento per alimentatori da centro dati AI da 4,5 kW, caratterizzato da componenti di potenza GaNSafe™ e Gen-3 'Fast' (G3F) in SiC ottimizzati. Questo design raggiunge la massima densità di potenza al mondo di 137 W/in3 con oltre il 97% di efficienza, rispondendo alle crescenti esigenze energetiche delle GPU AI di nuova generazione come le Blackwell B100 e B200 di NVIDIA.
Il design combina MOSFET in SiC G3F da 650 V per la fase PFC e IC di potenza GaNSafe da 650 V per la fase, sfruttando i punti di forza di ciascuna tecnologia dei semiconduttori. Questa innovazione consente un funzionamento a frequenze più elevate, prestazioni più fresche e una maggiore affidabilità. L'azienda segnala oltre 30 progetti di clienti nei centri dati in fase di sviluppo, potenzialmente generando milioni di entrate in GaN e SiC dal 2024 al 2025.
Navitas Semiconductor (Nasdaq: NVTS) ha presentado un innovador diseño de referencia de fuente de alimentación de 4.5 kW para centros de datos de IA, que cuenta con componentes de potencia optimizados GaNSafe™ y Gen-3 'Fast' (G3F) en SiC. Este diseño logra la máxima densidad de potencia del mundo de 137 W/in3 con más del 97% de eficiencia, atendiendo la creciente demanda de energía de las GPU de IA de próxima generación como las Blackwell B100 y B200 de NVIDIA.
El diseño combina MOSFET en SiC G3F de 650 V para la etapa PFC y ICs de potencia GaNSafe de 650 V para la etapa, aprovechando las fortalezas de cada tecnología de semiconductor. Esta innovación permite un funcionamiento a frecuencias más altas, un rendimiento más fresco y una mayor fiabilidad. La compañía informa de más de 30 proyectos de clientes de centros de datos en desarrollo, un potencial de millones en ingresos de GaN y SiC desde 2024 hasta 2025.
나비타스 반도체 (Nasdaq: NVTS)는 최적화된 GaNSafe™ 및 3세대 '패스트'(G3F) SiC 전력 구성 요소가 특징인 4.5kW AI 데이터 센터 전원 공급 장치 참조 설계를 공개했습니다. 이 설계는 세계 최고 전력 밀도인 137 W/in3 및 97% 이상의 효율을 달성하여 NVIDIA의 블랙웰 B100 및 B200과 같은 차세대 AI GPU의 증가하는 전력 수요에 대응합니다.
이 설계는 PFC 단계에 650 V G3F SiC MOSFET를, 단계에는 650 V GaNSafe 전력 IC를 결합하여 각각의 반도체 기술 강점을 활용합니다. 이 혁신은 더 높은 주파수 작동, 더 낮은 온도 성능 및 향상된 신뢰성을 가능하게 합니다. 회사는 개발 중인 30개 이상의 데이터 센터 고객 프로젝트가 있으며, 2024년부터 2025년까지 GaN 및 SiC의 수백만 달러 수익을 창출할 것으로 기대하고 있습니다.
Navitas Semiconductor (Nasdaq: NVTS) a dévoilé un design de référence révolutionnaire pour une alimentation de centre de données AI de 4,5 kW, intégrant des composants de puissance optimisés GaNSafe™ et Gen-3 'Fast' (G3F) en SiC. Ce design atteint la plus haute densité de puissance au monde de 137 W/in3 avec plus de 97 % d'efficacité, répondant aux exigences croissantes en puissance des GPU AI de nouvelle génération tels que les Blackwell B100 et B200 de NVIDIA.
Le design combine des MOSFET en SiC G3F de 650 V pour l'étape PFC et des IC de puissance GaNSafe de 650 V pour l'étape, tirant parti des forces de chaque technologie de semi-conducteur. Cette innovation permet un fonctionnement à des fréquences plus élevées, des performances plus fraîches et une amélioration de la fiabilité. L'entreprise signale plus de 30 projets clients de centres de données en cours de développement, ce qui pourrait générer des millions en revenus GaN et SiC de 2024 à 2025.
Navitas Semiconductor (Nasdaq: NVTS) hat ein bahnbrechendes Referenzdesign für ein 4,5 kW AI-Datenzentrum-Netzteil vorgestellt, das optimierte GaNSafe™ und Gen-3 'Fast' (G3F) SiC-Leistungsbauteile umfasst. Dieses Design erreicht die höchste Leistungsdichte der Welt von 137 W/in3 mit über 97% Effizienz, um die steigenden Stromanforderungen von KI-GPUs der nächsten Generation wie NVIDIAs Blackwell B100 und B200 zu erfüllen.
Das Design kombiniert 650 V G3F SiC MOSFETs für die PFC-Stufe und 650 V GaNSafe-Leistungs-ICs für die Stufe, wodurch die Stärken jeder Halbleitertechnologie ausgenutzt werden. Diese Innovation ermöglicht einen Betrieb bei höheren Frequenzen, kühlere Leistung und verbesserte Zuverlässigkeit. Das Unternehmen berichtet von über 30 Kundenprojekten in Datenzentren, die sich in der Entwicklung befinden, was potenziell Millionen von Umsatz mit GaN und SiC zwischen 2024 und 2025 antreiben könnte.
- Achieved world's highest power density of 137 W/in3 with over 97% efficiency in 4.5 kW AI data center power supply design
- Over 30 data center customer projects in development, expected to drive millions in GaN and SiC revenue from 2024 into 2025
- New design enables 3x increase in power in less than 18 months, meeting demands of next-gen AI GPUs
- GaNSafe and G3F SiC technologies offer improved performance, reliability, and sustainability benefits
- None.
Insights
Navitas Semiconductor's latest breakthrough in AI data center power supply design is a significant development for the tech industry. The company's 4.5 kW AI data center power supply reference design, utilizing GaNFast™ and GeneSiC™ technologies, achieves an impressive 137 W/in3 power density with over 97% efficiency. This innovation directly addresses the escalating power demands of next-generation AI GPUs, which require up to 3x more power than traditional CPUs.
The design's ability to deliver 4.5 kW in the CRPS185 form factor is a game-changer for data centers struggling to meet the power requirements of AI and HPC systems. By enabling power-per-rack specifications to increase from 30-40 kW to 100 kW, Navitas is paving the way for more compact and efficient data center designs. This could lead to significant cost savings and improved performance for AI-focused companies.
The use of GaNSafe™ power ICs and GeneSiC Gen-3 'Fast' (G3F) MOSFETs in this design showcases the potential of wide-bandgap semiconductors in high-power applications. The 650 V G3F SiC MOSFETs and 650 V GaNSafe power ICs offer superior performance, enabling higher switching frequencies and reduced component sizes. This technological advancement could spark a shift in the semiconductor industry, potentially accelerating the adoption of GaN and SiC in power electronics beyond data centers.
With over 30 data center customer projects in development, Navitas is well-positioned to capitalize on the growing demand for high-efficiency power solutions in AI infrastructure. This could lead to significant market share gains and revenue growth for the company in the coming years.
Navitas Semiconductor's latest innovation in AI data center power supply design presents a compelling growth opportunity for the company. The announcement of over 30 data center customer projects in development is particularly noteworthy, as it suggests strong market demand for Navitas' GaN and SiC solutions. These projects are expected to drive millions in revenue, ramping up from 2024 into 2025, which could significantly boost Navitas' financial performance in the near term.
The company's focus on the rapidly growing AI infrastructure market is strategically sound. As AI continues to drive demand for more powerful and efficient data centers, Navitas is well-positioned to capitalize on this trend. The ability to deliver 3x more power in the same form factor as previous designs could lead to increased market share and potentially higher profit margins.
Investors should note that Navitas' reference designs, which include complete design collateral, could accelerate customer adoption and reduce time-to-market for OEMs. This approach may lead to faster revenue realization and could help Navitas establish a strong foothold in the AI power supply market before competitors catch up.
However, it's important to consider that the semiconductor industry is highly competitive and cyclical. While Navitas appears to have a technological edge with its GaNFast and GeneSiC solutions, maintaining this advantage will require continued R&D investment. Additionally, the company's success will depend on its ability to scale production to meet potential demand from major data center operators.
Overall, this announcement positions Navitas favorably in the high-growth AI infrastructure market, potentially leading to improved financial performance and increased shareholder value in the medium to long term.
Navitas Semiconductor's latest innovation in AI data center power supply design aligns perfectly with the explosive growth of the AI market. The global AI market size was valued at
The company's ability to deliver 4.5 kW of power in the CRPS185 form factor addresses a critical pain point in the industry. As AI models become more complex, the power requirements for GPUs are skyrocketing. Navitas' solution, which enables a 3x increase in power density, could become a key enabler for the next generation of AI hardware.
Market adoption of Navitas' technology could be accelerated by several factors:
- Increasing regulatory pressure for energy-efficient data centers, particularly in Europe
- The trend towards edge computing, which requires more compact and efficient power solutions
- The ongoing shift towards wide-bandgap semiconductors in power electronics
However, Navitas will face competition from established players in the power semiconductor market, as well as potential new entrants attracted by the high growth potential of the AI infrastructure sector. The company's success will depend on its ability to maintain its technological edge and effectively scale its production to meet demand.
The announcement of over 30 data center customer projects in development suggests strong initial market traction. If Navitas can successfully convert these projects into long-term partnerships with major data center operators, it could secure a significant share of this rapidly growing market.
Navitas delivers efficient 4.5 kW power in the smallest power-supply form-factor for latest AI GPUs that demand 3x more power per rack
TORRANCE, Calif., July 25, 2024 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today released its 4.5 kW AI data center power supply reference design, with optimized GaNSafe™ and Gen-3 ‘Fast’ (G3F) SiC power components. The optimized design enables the world’s highest power density with 137 W/in3 and over
Next-generation AI GPUs like NVIDIA’s Blackwell B100 and B200 each demand over 1 kW of power for high-power computation, 3x higher than traditional CPUs. These new demands are driving power-per-rack specifications from 30-40 kW up to 100 kW.
Navitas announced its AI Power Roadmap in March 2024, showcasing next-generation data center power solutions for the growing demand in AI and high-performance computing (HPC) systems. The first design was a GaNFast-based 3.2 kW AC-DC converter in the Common Redundant Power Supply (CRPS) form factor, as defined by the hyperscale Open Compute Project. The 3.2 kW CRPS185 (for 185 mm length) enabled a
Now, the latest 4.5 kW CRPS185 design demonstrates how new GaNSafe™ power ICs and GeneSiC Gen-3 ‘Fast’ (G3F) MOSFETs enables the world’s highest power density and efficiency solution. At the heart of the design is an interleaved CCM totem-pole PFC using SiC with full-bridge LLC topology with GaN, where the fundamental strengths of each semiconductor technology are exploited for the highest frequency, coolest operation, optimized reliability and robustness, and highest power density and efficiency. The 650 V G3F SiC MOSFETs feature ‘trench-assisted planar’ technology which delivers world-leading performance over temperature for the highest system efficiency and reliability in real-world applications.
For the LLC stage, 650 V GaNSafe power ICs are ideal and unique in the industry with integrated power, protection, control, and drive in an easy-to-use, robust, thermally-adept TOLL power package. Additionally, GaNSafe power ICs offer extremely low switching losses, with a transient-voltage capability up to 800 V, and other high-speed advantages such as low gate charge (Qg), output capacitance (COSS), and no reverse-recovery loss (Qrr). High-speed switching reduces the size, weight, and cost of passive components in a power supply, such as transformers, capacitors, and EMI filters. As power density increases, next-gen GaN and SiC enable sustainability benefits, specifically CO2 reductions due to system efficiency increases and ‘dematerialization’.
The 3.2 kW and 4.5 kW platforms have already generated significant market interest with over 30 data center customer projects in development expected to drive millions in GaN and SiC revenue, ramping from 2024 into 2025.
Navitas’ AI data center power supply reference designs dramatically accelerate customer developments, minimize time-to-market, and set new industry benchmarks in energy efficiency, power density and system cost, enabled by GaNFast power ICs and GeneSiC MOSFETs. These system platforms include complete design collateral with fully tested hardware, embedded software, schematics, bills-of-material, layout, simulation, and hardware test results.
“AI is dramatically accelerating power requirements of data centers, processors and anywhere AI is going in the decades to come creating a significant challenge for our industry. Our system design center has stepped up to this challenge delivering a 3x increase in power in less than 18 months”, said Gene Sheridan, CEO of Navitas Semiconductor. “Our latest GaNFast technology, combined with our G3F SiC technology are delivering the highest power density and efficiency the world has ever seen…the perfect solution for the Blackwell AI processors and beyond.”
To learn more about our AI power platform solutions, including the GaNSafe and G3F SiC MOSFETs families, please visit www.navitassemi.com.
About Navitas
Navitas Semiconductor (Nasdaq: NVTS) is the only pure-play, next-generation power-semiconductor company, celebrating 10 years of power innovation founded in 2014. GaNFast™ power ICs integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary GeneSiC™ power devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Focus markets include EV, solar, energy storage, home appliance / industrial, data center, mobile, and consumer. Over 250 Navitas patents are issued or pending. Navitas offers the industry’s first and only 20-year GaNFast warranty and was the world’s first semiconductor company to be CarbonNeutral®-certified.
Navitas Semiconductor, GaNFast, GaNSense, GeneSiC, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names, and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.
Contact Information:
Llew Vaughan-Edmunds, Sr Director, Corporate Marketing & Product Management
info@navitassemi.com
Stephen Oliver, VP Investor Relations
ir@navitassemi.com
A photo accompanying this announcement is available at https://www.globenewswire.com/NewsRoom/AttachmentNg/ad61e769-f559-4e5d-8b0e-ad0433af46ba
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