Transphorm’s TOLL FETs Position GaN as Optimal Devices for Power Hungry AI Applications
- Transphorm introduces three new SuperGaN FETs in TOLL packages, offering higher reliability and performance in a compact footprint.
- The devices are optimal for high power applications and are compatible with AI systems and electric vehicles.
- Transphorm's SuperGaN devices lead the market in terms of reliability, gate safety margin, noise immunity, and temperature coefficient of resistance.
- None.
Three New Devices Bring SuperGaN’s Normally-Off D-Mode Platform Advantages to SMD-Based High Power Systems Requiring Higher Reliability and Performance with Lower Thermals in a Compact Footprint
The three surface mount devices (SMDs) support higher power applications operating within an average range of 1 to 3 kilowatts. These power systems are typically found in high performance segments such as computing (AI, server, telecom, data center), energy and industrial (PV inverters, servo motors), and other broad industrial markets which, collectively, have a current global GaN TAM of
Transphorm’s high power GaN devices are already widely supplied to leading customers who use them to power in-production high performance systems including datacenter power supplies, high power gaming PSUs, UPSes, and microinverters. These applications can also be supported by the TOLL devices as can electric-vehicle-based DC-to-DC converters and onboard chargers, with the underlying SuperGaN die already automotive (AEC-Q101) qualified.
The SuperGaN TOLL FETs represent the sixth package type offered by Transphorm, giving customers the widest selection of packages to meet their unique design requirements. As with all Transphorm products, the TOLL devices harness the inherent performance and reliability advantages made possible by the normally-off d-mode SuperGaN platform. For a detailed competitive analysis between SuperGaN and e-mode GaN, download the company’s latest white paper titled The Fundamental Advantages of d-Mode GaN in Cascode Configuration. The white paper’s conclusion aligns with a head-to-head comparison released earlier this year showing the 72 milliohm SuperGaN FETs outperforming larger 50 milliohm e-mode devices in a commercially available 280 W gaming laptop charger.
SuperGaN devices lead the market with unmatched:
- Reliability at < 0.03 FIT
- Gate safety margin at ± 20 V
- Noise immunity at 4 V
-
Temperature coefficient of resistance (TCR) at
20% lower than e-mode - Drive flexibility with standard drivers and protection circuits readily available in silicon-based controllers/drivers
Device Specifications
The robust 650 V SuperGaN TOLL devices are JEDEC qualified. Because the normally-off d-mode platform pairs the GaN HEMT with a low voltage silicon MOSFET, the SuperGaN FETs are easy to drive with commonly used off-the-shelf gate drivers. They can be used in various hard- and soft-switching AC-to-DC, DC-to-DC, and DC-to-AC topologies to increase power density while reducing system size, weight, and overall cost.
Part |
Dimensions (mm) |
RDS(on) (mΩ) typ |
RDS(on) (mΩ) max |
Vth (V) typ |
Id (25°C) (A) max |
TP65H035G4QS |
10 x 12 |
35 |
41 |
4 |
46.5 |
TP65H050G4QS |
10 x 12 |
50 |
60 |
4 |
34 |
TP65H070G4QS |
10 x 12 |
72 |
85 |
4 |
29 |
Availability and Supporting Resources
The SuperGaN TOLL devices are currently available to sample. To receive product, visit https://www.transphormusa.com/en/products/ and submit a request.
Key application notes to optimize TOLL-based system development include:
- AN0009: Recommended External Circuitry for Transphorm GaN FETs
- AN0003: Printed Circuit Board Layout and Probing for GaN Power Switches
- AN0014: Low Cost, High Density High-Voltage Silicon Driver for Low-to Mid-Power GaN FET Applications
About Transphorm
Transphorm, Inc., a global leader in the GaN revolution, designs and manufactures high performance and high reliability GaN semiconductors for high voltage power conversion applications. Having one of the largest Power GaN IP portfolios of more than 1,000 owned or licensed patents, Transphorm produces the industry’s first JEDEC and AEC-Q101 qualified high voltage GaN semiconductor devices. The Company’s vertically integrated device business model allows for innovation at every development stage: design, fabrication, device, and application support. Transphorm’s innovations move power electronics beyond the limitations of silicon to achieve over
The SuperGaN mark is a registered trademark of Transphorm, Inc. All other trademarks are the property of their respective owners.
View source version on businesswire.com: https://www.businesswire.com/news/home/20231010558915/en/
Press Contact:
Heather Ailara
+1.973.567.6040
heather.ailara@transphormusa.com
Investor Contacts:
David
KCSA Strategic Communications
transphorm@kcsa.com
Source: Transphorm, Inc.
FAQ
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