Transphorm’s SuperGaN at PCIM 2024: Surpassing SiC and e-mode GaN Capabilities in High Power Systems
Transphorm (Nasdaq: TGAN) will showcase its SuperGaN platform at PCIM 2024, emphasizing its superior performance over Silicon Carbide (SiC) in high-power systems. The SuperGaN platform delivers lower losses and higher electron mobility, making it ideal for electric vehicles, datacenters, AI, and industrial applications. Transphorm's GaN products support a wide power range, from 45W adapters to 7.5kW PSUs, and are used in groundbreaking customer products. The company estimates a GaN total addressable market of $8 billion by 2028. Notable innovations include a 5-microsecond short-circuit withstand time, a bidirectional switch, and a 1200V GaN-on-Sapphire device. Transphorm's vertical integration and reliability make it a leader in the GaN power semiconductor industry.
- Transphorm's SuperGaN platform outperforms Silicon Carbide in high-power systems.
- The GaN market is estimated to reach $8 billion by 2028.
- Transphorm's products cover a wide power range from 45W to 7.5kW.
- Innovations include a 5-microsecond short-circuit withstand time and a 1200V GaN-on-Sapphire device.
- The company boasts over 300 billion field hours with a FIT rate of < 0.05.
- Technical achievements demonstrated at PCIM 2024 include solutions for electric vehicle chargers and renewable energy systems.
- No specific financial figures or revenue growth were provided.
- The press release lacks information on current or projected profitability.
- Potential risks of focusing heavily on high-power systems and niche markets.
Lower Losses, Higher Performance Delivered by Transphorm’s Normally-off d-mode Platform Enables Electric Vehicle, Datacenter/AI, and Other Multi-market Power Systems, Along with Groundbreaking GaN Product Innovations
Transphorm SuperGaN FETs are in production in a wide range of customer products crossing the power spectrum from low 45 W power adapters to higher power 7.5 kW PSUs. Many of these customer products are the first publicly recognized GaN-based systems of their kind and uniquely demonstrate advantages enabled only by the SuperGaN platform. Examples include the previously mentioned liquid-cooled 7.5 kW PSU for mission-critical datacenter/blockchain applications; a 2.7 kW server CRPS with > 82 W/in3 power density (highest in any GaN power system available today); and 2.2 kW and 3 kW rack-mount 1U uninterruptible power supplies (UPSes). These design wins illustrate Transphorm’s ability to drive GaN into the various application markets composing an estimated GaN TAM of
In addition to real-world customer products, Transphorm continues to lead in technological achievements having recently demonstrated a 5 microsecond short-circuit withstand time, a bidirectional four-quadrant switch, and a 1200 V GaN-on-Sapphire device.
On-site demonstrations will include Transphorm solutions for 2- and 3-wheeler electric vehicle chargers along with customer PSUs for renewable energy systems, data centers, and more.
Speaking Engagement
Learn more about how Transphorm’s GaN solutions outperform competitive technologies and enable cross-industry innovations during the Bodo’s Power Systems session.
Panel: GaN Wide Bandgap Design, the Future of Power
Speaker: Philip Zuk, Senior Vice President, Business Development and Marketing
Date: June 12
Time: 2:20 – 3:20 p.m. CEST
Location: Hall 7, Stall 743
One Core Platform, Crossing the Power Spectrum
Transphorm is the leading GaN power semiconductor company differentiated by its technology’s:
Manufacturability: Vertically integrated owning the EPI design, wafer process, and FET die design.
Designability: Offering well-known, Industry Standard packages and Performance packages while partnering with global customers for easier, quicker system development.
Drivability: Offering devices that are driven like silicon and pair with off-the-shelf controllers and drivers while requiring minimal external circuitry.
Reliability: Still leading the industry with a current FIT rate of < 0.05 across more than 300 billion field hours of operation in low to high power applications.
Meet With Us
To schedule a meeting with Transphorm during the show, please contact vipin.bothra@transphormusa.com.
About Transphorm
Transphorm, Inc., a global leader in the GaN revolution, designs and manufactures high performance and high reliability GaN semiconductors for high voltage power conversion applications. Having one of the largest Power GaN IP portfolios of more than 1,000 owned or licensed patents, Transphorm produces the industry’s first JEDEC and AEC-Q101 qualified high voltage GaN semiconductor devices. The Company’s vertically integrated device business model allows for innovation at every development stage: design, fabrication, device, and application support. Transphorm’s innovations move power electronics beyond the limitations of silicon to achieve over
The SuperGaN mark is a registered trademark of Transphorm, Inc. All other trademarks are the property of their respective owners.
View source version on businesswire.com: https://www.businesswire.com/news/home/20240520019693/en/
Heather Ailara
+1.973.567.6040
heather.ailara@transphormusa.com
Source: Transphorm, Inc.
FAQ
What is Transphorm showcasing at PCIM 2024?
Which applications benefit from Transphorm's SuperGaN platform?
What is the estimated market value for GaN by 2028?
What are some key innovations from Transphorm discussed in the PR?
What power range do Transphorm's GaN products support?
How reliable are Transphorm's GaN products?
