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Transphorm Demonstrates a Bidirectional SuperGaN Power Supply with New Reference Design for E-Mobility and Energy/Industrial Markets

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Transphorm (Nasdaq: TGAN), a leader in GaN power semiconductors, has introduced a 300 W DC-to-DC GaN reference design for electric vehicle battery chargers. The design features TP65H150G4PS 150 mOhm SuperGaN® FETs, showcasing bidirectional power capabilities for e-mobility applications. This allows power to flow both from AC to DC and DC to AC, enhancing energy efficiency. The design supports V2X infrastructure, including V2L, V2H, and V2G, with a market size projected to reach up to $70 billion by 2030. Specifications include a peak efficiency of 97.3% and natural convection cooling. The reference design is suitable for high power density applications, such as DC-to-DC power stages in energy harvesting and vehicle battery chargers.

Positive
  • Introduction of 300 W DC-to-DC GaN reference design for electric vehicle battery chargers.
  • Uses TP65H150G4PS 150 mOhm SuperGaN® FETs for high efficiency.
  • Bidirectional power capability enhances energy efficiency.
  • Supports V2X (vehicle-to-everything) infrastructure for e-mobility.
  • Projected V2X system market size up to $70 billion by 2030.
  • Peak efficiency of 97.3%.
  • Natural convection cooling without forced air.
  • Design suitable for high power density applications.
Negative
  • No mention of immediate revenue impact from the new reference design.
  • Bidirectional functionality may increase complexity and cost of implementation.
  • Market adoption and scaling are uncertain and dependent on broader V2X infrastructure development.

The introduction of Transphorm's new 300 W DC-to-DC GaN reference design is a significant development in the field of electronic mobility and energy solutions. The use of Gallium Nitride (GaN) semiconductors, specifically the TP65H150G4PS 150 mOhm SuperGaN® FETs, underscores the ongoing shift towards higher efficiency and smaller form factor power systems.

Bidirectional power conversion is a standout feature, enabling power to flow both ways— from AC to DC and back, depending on system requirements. This is pivotal in advancing V2X (vehicle-to-everything) infrastructure, including V2L (vehicle-to-load), V2H (vehicle-to-house) and V2G (vehicle-to-grid) systems. The power density and efficiency, marked at 97.3, also indicate superior performance in energy harvesting and backup power applications.

For investors, the benefits are clear. GaN technology's ability to reduce size and cost while improving efficiency positions it favorably against traditional silicon-based technologies. This could potentially lead to increased adoption in various high-power applications, ranging from electric vehicle chargers to renewable energy systems.

The market for V2X systems is projected to grow significantly, with estimates ranging from 9 billion USD to 70 billion USD by 2030. Transphorm's new reference design aligns perfectly with this growth trajectory, addressing key market demands for efficiency, bidirectionality and compactness. The board's peak efficiency of 97.3 and high power density of 36.5 W/in3 are noteworthy metrics that will resonate with stakeholders focused on performance metrics.

From a market perspective, the ability to simplify and speed up power system development — thanks to its fully analog implementation — can attract a broad user base. This is important for sectors like e-mobility and renewable energy, where quick time-to-market can provide a competitive edge.

Overall, this development is positive for Transphorm, potentially enabling them to capture a larger share of the growing V2X and high-power application markets.

Financially, the launch of this new GaN reference design could drive significant revenue growth for Transphorm. The high efficiency and bidirectional capabilities of the product are likely to attract contracts from OEMs and system integrators in the EV and renewable energy sectors. Given the projected market size for V2X systems, even a small market penetration could translate into substantial revenue.

Moreover, the innovation aligns with the broader industry trend towards more efficient and compact power systems, which could favorably impact the company's stock performance in the medium to long term. However, potential investors should monitor how quickly and widely this technology is adopted, as well as any competing technologies that might emerge.

300 W DC-to-DC Battery Charger Board Showcases Key Capability of GaN Technology Necessary to Advance E-Mobility Applications

GOLETA, Calif.--(BUSINESS WIRE)-- Transphorm, Inc. (Nasdaq: TGAN), the global leader in robust GaN power semiconductors, today announced the release of a new 300 W DC-to-DC GaN reference design for 2- and 3-wheeled electric vehicle battery chargers. The TDDCDC-TPH-IN-BI-LLC-300W-RD design uses TP65H150G4PS 150 mOhm SuperGaN® FETs in a robust TO-220 package to power a high performing, high efficiency energy harvesting and distribution battery charging system. The new board notably demonstrates one of the most anticipated value propositions of a GaN power supply: bidirectionality. This capability indicates that a single power system can deliver power in two directions from input (AC) to output (DC) and output (DC) to input (AC) depending on system needs, with GaN enabling energy efficiency in both conversions.

“The first value proposition of GaN in high power applications was realized by the highly efficient operation of the bridgeless totem-pole power factor correction circuit. This subsequently led to the next level of benefits across a variety of topologies, including overall smaller and lower-cost power systems across the full power conversion spectrum, from 30 watts to over 10 kilowatts,” said Primit Parikh, President and CEO, Transphorm. “Continuing the leadership of Transphorm GaN in higher power applications, we have now demonstrated bidirectional power conversion that can be used by vehicle on-board chargers for e-mobility, renewable energy and backup power systems, and other power supply applications requiring highly integrated, interchangeable input and output terminals.”

Bidirectionality is a core capability required to advance V2X (vehicle-to-everything) infrastructure for e-mobility applications that comprise V2L (vehicle-to-load), V2H (vehicle-to-house), and V2G (vehicle-to-grid) scenarios, which represent a projected overall V2X system market size ranging from a conservative 9 billion USD to an aggressive 70 billion USD by 2030.

In EV systems, renewable energy systems, and other applications within the V2X model, design and performance flexibility will be critical to innovation and wider deployment. The high power density and bidirectionality is a key enabler for this area. The V2X applications are prime use cases that can truly leverage all the SuperGaN technology’s superior value proposition. This new reference design is an exciting example of what’s possible in a future enabled by SuperGaN technology.

TDDCDC-TPH-IN-BI-LLC-300W-RD Reference Design Specifications

The TDDCDC-TPH-IN-BI-LLC-300W-RD board is a fully analog implementation without complex firmware development for the power stage. This design configuration enables simpler and faster power system development.

Specification highlights follow:

Topology

Full-Bridge LLC

Convection Cooling

Natural convention without forced air

Output Power

300 W

Output Voltage

48 V/6 A, 380 V/0.9 A

Peak Efficiency

97.3%

Power Density

36.5 W/in3

Target Applications and Availability

The TDDCDC-TPH-IN-BI-LLC-300W-RD board is ideal for high power density applications such as the DC-to-DC power stage of bidirectional DC-to-AC inverter power supplies used in energy harvesting applications with solar-, battery- and/or grid-tied solutions as well as AC-to-DC power supplies used in 2-, 3-, and 4-wheeler battery chargers.

The design guide and BOM can be downloaded here: https://www.transphormusa.com/en/reference-design/tddcdc-tph-in-bi-llc-300w-rd/.

About Transphorm

Transphorm, Inc., a global leader in the GaN revolution, designs and manufactures high performance and high reliability GaN semiconductors for high voltage power conversion applications. Having one of the largest Power GaN IP portfolios of more than 1,000 owned or licensed patents, Transphorm produces the industry’s first JEDEC and AEC-Q101 qualified high voltage GaN semiconductor devices. The Company’s vertically integrated device business model allows for innovation at every development stage: design, fabrication, device, and application support. Transphorm’s innovations move power electronics beyond the limitations of silicon to achieve over 99% efficiency, 50% more power density and 20% lower system cost. Transphorm is headquartered in Goleta, California and has manufacturing operations in Goleta and Aizu, Japan. For more information, please visit www.transphormusa.com. Follow us on Twitter @transphormusa and WeChat at Transphorm_GaN.

The SuperGaN mark is a registered trademark of Transphorm, Inc. All other trademarks are the property of their respective owners.

Press Contact:

Heather Ailara

+1.973.567.6040

heather.ailara@transphormusa.com

Source: Transphorm, Inc.

FAQ

What is the new product announced by Transphorm (TGAN)?

Transphorm announced a new 300 W DC-to-DC GaN reference design for electric vehicle battery chargers.

What is the significance of the bidirectional capability in Transphorm's new design?

The bidirectional capability allows power to flow both from AC to DC and DC to AC, enhancing energy efficiency and flexibility in applications like e-mobility.

What are the specifications of Transphorm's new reference design?

The design features a peak efficiency of 97.3%, natural convection cooling, and is suitable for high power density applications with output power of 300 W.

How does Transphorm's new design support V2X infrastructure?

The bidirectional capability is essential for V2X applications, including V2L, V2H, and V2G, which are projected to reach up to $70 billion by 2030.

Transphorm, Inc.

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