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Navitas and Richardson Electronics, Ltd. Expand Technology Partnership to EMEA for Next-Gen Silicon Carbide Power Devices

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Richardson Electronics (RELL) and Navitas Semiconductor have expanded their distribution partnership for next-generation silicon carbide (SiC) power semiconductors into Europe, the Middle East, and Africa (EMEA). The partnership focuses on Navitas' GeneSiC product line, including their latest Gen-3 Fast MOSFETs, which deliver up to 25°C lower case temperatures and up to 3x longer life than alternative SiC products. The portfolio ranges from 650V to 6,500V, targeting applications in renewable energy, motor drives, induction heating, battery charging, and high voltage DC-DC conversion.

Richardson Electronics (RELL) e Navitas Semiconductor hanno ampliato la loro partnership di distribuzione per i semiconduttori di potenza in carburo di silicio (SiC) di nuova generazione in Europa, Medio Oriente e Africa (EMEA). La partnership si concentra sulla linea di prodotti GeneSiC di Navitas, inclusi i loro ultimi MOSFET veloci Gen-3, che offrono temperature di funzionamento fino a 25°C inferiori e una vita utile fino a 3 volte più lunga rispetto ai prodotti SiC alternativi. Il portafoglio spazia da 650V a 6.500V, mirando a applicazioni nel settore delle energie rinnovabili, azionamenti elettrici, riscaldamento a induzione, ricarica di batterie e conversione DC-DC ad alta tensione.

Richardson Electronics (RELL) y Navitas Semiconductor han ampliado su asociación de distribución para semiconductores de potencia de carburo de silicio (SiC) de nueva generación en Europa, Oriente Medio y África (EMEA). La asociación se centra en la línea de productos GeneSiC de Navitas, incluidos sus últimos MOSFETs rápidos Gen-3, que ofrecen temperaturas de caja hasta 25°C más bajas y hasta 3 veces más vida útil que los productos SiC alternativos. El portafolio abarca de 650V a 6,500V, orientándose a aplicaciones en energía renovable, accionamientos de motores, calefacción por inducción, carga de baterías y conversión DC-DC de alta tensión.

리차드슨 일렉트로닉스 (RELL)나비타스 반도체는 차세대 실리콘 카바이드(SiC) 전원 반도체의 유통 파트너십을 유럽, 중동 및 아프리카(EMEA)로 확장했습니다. 이 파트너십은 나비타스의 GeneSiC 제품 라인에 초점을 맞추고 있으며, 최신 Gen-3 고속 MOSFET를 포함하여 대체 SiC 제품보다 케이스 온도가 최대 25°C 낮고 수명은 최대 3배 더 긴 장점을 제공합니다. 포트폴리오는 650V에서 6,500V까지 다양하며, 재생 가능 에너지, 모터 드라이브, 유도 난방, 배터리 충전 및 고전압 DC-DC 변환의 애플리케이션을 목표로 하고 있습니다.

Richardson Electronics (RELL) et Navitas Semiconductor ont élargi leur partenariat de distribution pour les semi-conducteurs de puissance en carbure de silicium (SiC) de nouvelle génération en Europe, au Moyen-Orient et en Afrique (EMEA). Ce partenariat se concentre sur la ligne de produits GeneSiC de Navitas, y compris leurs derniers MOSFET rapides Gen-3, qui offrent des températures de boîtier pouvant aller jusqu'à 25°C inférieures et jusqu'à 3 fois plus de longévité que les produits SiC alternatifs. Le portefeuille s'étend de 650V à 6.500V, ciblant des applications dans l'énergie renouvelable, les entraînements de moteurs, le chauffage par induction, la charge de batteries et la conversion DC-DC haute tension.

Richardson Electronics (RELL) und Navitas Semiconductor haben ihre Vertriebspartnerschaft für moderne Siliziumkarbid (SiC) Leistungshalbleiter auf Europa, den Nahen Osten und Afrika (EMEA) ausgeweitet. Der Fokus der Partnerschaft liegt auf der GeneSiC Produktlinie von Navitas, einschließlich ihrer neuesten Gen-3 Fast MOSFETs, die bis zu 25°C niedrigere Gehäusetemperaturen und eine bis zu dreimal längere Lebensdauer als alternative SiC-Produkte bieten. Das Portfolio reicht von 650V bis 6.500V und zielt auf Anwendungen in den Bereichen erneuerbare Energien, Motorantriebe, Induktionsheizung, Batterieladung und Hochspannungs-DC-DC-Wandlung ab.

Positive
  • Expansion of distribution network into EMEA market
  • Gen-3 Fast MOSFETs offer 25°C lower case temperatures
  • Products deliver 3x longer life compared to alternatives
  • Wide voltage range portfolio (650V to 6,500V)
Negative
  • None.

Insights

This distribution partnership expansion represents a significant strategic move for Richardson Electronics, strengthening their position in the fast-growing silicon carbide (SiC) power semiconductor market across EMEA. The collaboration with Navitas, particularly focusing on their advanced GeneSiC technology, opens up substantial revenue opportunities in key growth sectors like renewable energy, electric vehicles and industrial applications.

The partnership leverages Richardson's established global infrastructure and technical expertise while gaining access to Navitas' cutting-edge Gen-3 Fast MOSFETs, which offer 25% lower operating temperatures and 3x longer life compared to competitors. This technological advantage, combined with Richardson's strong distribution network, positions them well to capture market share in the rapidly expanding power semiconductor space.

The technical specifications of Navitas' GeneSiC technology represent a significant advancement in power semiconductor capabilities. The proprietary 'trench-assisted planar' technology and voltage range from 650V to 6,500V address critical needs in high-power applications. The improved thermal performance and extended device lifetime are particularly valuable for industrial and renewable energy applications where reliability is paramount.

The availability of bare die options adds important flexibility for custom power solutions, while the comprehensive voltage range enables Richardson to serve diverse market segments with a single technology platform. This technological edge could help capture market share from traditional silicon-based solutions.

LAFOX, Ill. and TORRANCE, Calif., Nov. 12, 2024 (GLOBE NEWSWIRE) -- Richardson Electronics, Ltd. (Nasdaq: RELL) and Navitas Semiconductor (Nasdaq: NVTS) announced today an expanded distribution partnership for next-gen silicon carbide (SiC) power semiconductors for Europe, the Middle East, and Africa (EMEA).

Navitas is the only pure-play, next-generation power-semiconductor company and industry leader in next-generation GeneSiC™ silicon carbide (SiC) and GaNFast™ gallium nitride (GaN) power semiconductors. Enabled by 20 years of SiC innovation leadership, GeneSiC proprietary ‘trench-assisted planar’ technology provides world-leading performance over temperature, delivering high-speed, cool-running operation for high-power, high-reliability applications.

Richardson Electronics, Ltd. will continue to focus on the GeneSiC product line, expanding from North America into EMEA. This includes Navitas’ latest family of Gen-3 Fast MOSFETs, delivering a high-speed, cool-running performance that ensures up to 25°C lower case temperatures and up to 3x longer life than alternative SiC products. This enables unprecedented, industry-leading levels of performance, robustness, and quality.

With an entire portfolio from 650V to 6,500V, including bare die for those requiring further flexibility in their engineered solutions, these devices are ideal for higher power applications, including but not limited to, renewable energy and storage, motor drives, induction heating and welding, battery charging, and high voltage DC-DC conversion.

“As a global company and technology provider for power management products and applications, Richardson Electronics is very excited to bring Navitas products to EMEA,” said Greg Peloquin, Executive Vice President and General Manager of Power & Microwave Technologies and Green Energy Solutions groups. “Expanding our relationship shows our dedication to supporting Navitas products and offering disruptive technology to meet our customers’ design needs.”

“We are excited to partner with Richardson Electronics to support our expanding silicon carbide portfolio beyond the Americas into the EMEA region,” said David Carroll, Senior Vice President of Worldwide Sales at Navitas. “Richardson Electronics provides excellent technical and sales support and has a strong reach within our key focus markets. We are looking forward to expanding our customer base in EMEA.” 

About Richardson Electronics – Power & Microwave Technologies

For over 75 years, Richardson Electronics has been your industry-leading global provider of engineered solutions, RF & microwave, and power products. The Power & Microwave Technologies group continues this legacy and complements it with new products from the world’s most innovative technology partners. Richardson Electronics’ Power & Microwave Technologies group focuses on what we do best: identify and design disruptive technologies, introduce new products on a global basis, develop solutions for our customers, and provide exceptional worldwide support. As a global company, we provide solutions and add value through design-in support, systems integration, prototype design and manufacturing, testing, logistics, and aftermarket technical service and repair—all through our existing global infrastructure. More information is available at www.rellpower.com.

About Richardson Electronics, Ltd.

Richardson Electronics, Ltd. is a leading global manufacturer of engineered solutions, power grid and microwave tubes, and related consumables; power conversion and RF and microwave components, including green energy solutions; high-value replacement parts, tubes, and service training for diagnostic imaging equipment; and customized display solutions. More than 60% of our products are manufactured in LaFox, Illinois, Marlborough, Massachusetts, or Donaueschingen, Germany, or by one of our manufacturing partners throughout the world. All our partners manufacture to our strict specifications and per our supplier code of conduct. We serve customers in the alternative energy, healthcare, aviation, broadcast, communications, industrial, marine, medical, military, scientific, and semiconductor markets. The Company’s strategy is to provide specialized technical expertise and “engineered solutions” based on our core engineering and manufacturing capabilities. The Company provides solutions and adds value through design-in support, systems integration, prototype design and manufacturing, testing, logistics, and aftermarket technical service and repair through its global infrastructure. More information is available at www.rell.com.

Richardson Electronics common stock trades on the NASDAQ Global Select Market under the ticker symbol RELL.

About Navitas

Navitas Semiconductor (Nasdaq: NVTS) is the only pure-play, next-generation power-semiconductor company, celebrating 10 years of power innovation founded in 2014. GaNFast™ power ICs integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary GeneSiC™ power devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Focus markets include EV, solar, energy storage, home appliance / industrial, data center, mobile, and consumer. Over 300 Navitas patents are issued or pending, with the industry’s first and only 20-year GaNFast warranty. Navitas is the world’s first semiconductor company to be CarbonNeutral®-certified.

For Details Contact:
Chris Marshall
CTO/VP of Marketing
Phone: (630) 208-2222
chrism@rell.com

40W267 Keslinger Road
PO BOX 393
LaFox, IL 60147-0393 USA
(630) 208-2200 | Fax:(630) 208-2550


FAQ

What regions are included in Richardson Electronics (RELL) and Navitas' expanded distribution partnership?

The expanded distribution partnership covers Europe, the Middle East, and Africa (EMEA), extending beyond their existing North American partnership.

What performance improvements do Navitas' Gen-3 Fast MOSFETs offer compared to alternative SiC products?

Navitas' Gen-3 Fast MOSFETs deliver up to 25°C lower case temperatures and up to 3x longer life compared to alternative SiC products.

What voltage range does RELL's distributed GeneSiC portfolio cover?

The GeneSiC portfolio ranges from 650V to 6,500V, including bare die options for engineered solutions.

What are the main applications for RELL's distributed Navitas SiC products?

The products are designed for renewable energy and storage, motor drives, induction heating and welding, battery charging, and high voltage DC-DC conversion applications.

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