onsemi Completes Acquisition of Qorvo’s Silicon Carbide JFET Technology Portfolio
onsemi has completed the acquisition of Qorvo's Silicon Carbide Junction Field-Effect Transistor (SiC JFET) technology business, including the United Silicon Carbide subsidiary, for $115 million in cash. The acquisition expands onsemi's market opportunity by $1.3 billion by 2030 and strengthens its position in high and mid voltage power semiconductors.
The SiC JFET technology will complement onsemi's EliteSiC power portfolio, addressing efficiency needs in AI data centers' power supply units. In electric vehicle applications, it improves efficiency and safety through solid-state switches in battery disconnect units. The technology also enables energy storage topologies and solid-state circuit breakers in industrial applications.
onsemi ha completato l'acquisizione del business della tecnologia dei transistor a giunzione in carburo di silicio (SiC JFET) di Qorvo, compresa la controllata United Silicon Carbide, per 115 milioni di dollari in contante. Questa acquisizione amplia le opportunità di mercato di onsemi di 1,3 miliardi di dollari entro il 2030 e rafforza la sua posizione nei semiconduttori ad alta e media tensione.
La tecnologia SiC JFET completerà il portafoglio di potenza EliteSiC di onsemi, soddisfacendo le esigenze di efficienza nelle unità di alimentazione dei centri dati AI. Nei veicoli elettrici, migliora l'efficienza e la sicurezza attraverso interruttori a stato solido nelle unità di disconnessione della batteria. La tecnologia consente anche topologie di stoccaggio dell'energia e interruttori automatici a stato solido nelle applicazioni industriali.
onsemi ha completado la adquisición del negocio de tecnología de transistores de efecto de campo de unión de carburo de silicio (SiC JFET) de Qorvo, incluyendo la subsidiaria United Silicon Carbide, por 115 millones de dólares en efectivo. La adquisición amplía la oportunidad de mercado de onsemi en 1,3 mil millones de dólares para 2030 y refuerza su posición en semiconductores de potencia de alta y media tensión.
La tecnología SiC JFET complementará el portafolio de potencia EliteSiC de onsemi, atendiendo las necesidades de eficiencia en las unidades de suministro de energía de los centros de datos de inteligencia artificial. En aplicaciones de vehículos eléctricos, mejora la eficiencia y la seguridad a través de interruptores de estado sólido en las unidades de desconexión de baterías. La tecnología también permite topologías de almacenamiento de energía e interruptores automáticos de estado sólido en aplicaciones industriales.
온세미가 Qorvo의 실리콘 카바이드 접합형 전계 효과 트랜지스터(SiC JFET) 기술 사업을 인수 완료했습니다. 여기에는 United Silicon Carbide 자회사가 포함되어 있으며, 인수가는 1억 1천 5백만 달러입니다. 이 인수는 온세미의 시장 기회를 2030년까지 13억 달러 증가시키고, 고전압 및 중전압 전력 반도체 분야에서의 입지를 강화합니다.
SiC JFET 기술은 온세미의 EliteSiC 전력 포트폴리오를 보완하여 AI 데이터 센터의 전원 공급 장치에서 효율성 요구를 충족합니다. 전기차 응용 프로그램에서는 배터리 분리 장치의 고체 상태 스위치를 통해 효율성과 안전성을 향상합니다. 이 기술은 산업 응용 프로그램에서 에너지 저장 토폴로지 및 고체 상태 차단기를 가능하게 합니다.
onsemi a finalisé l'acquisition du secteur d'activité des transistors à effet de champ à jonction en carbure de silicium (SiC JFET) de Qorvo, y compris la filiale United Silicon Carbide, pour 115 millions de dollars en espèces. Cette acquisition élargit l'opportunité de marché d'onsemi de 1,3 milliard de dollars d'ici 2030 et renforce sa position dans les semi-conducteurs de puissance à haute et moyenne tension.
La technologie SiC JFET complétera le portefeuille de puissance EliteSiC d'onsemi, répondant aux besoins d'efficacité dans les unités d'alimentation des centres de données d'IA. Dans les applications de véhicules électriques, elle améliore l'efficacité et la sécurité grâce à des interrupteurs à état solide dans les unités de déconnexion de batterie. La technologie permet également des topologies de stockage d'énergie et des disjoncteurs à état solide dans les applications industrielles.
onsemi hat die Übernahme des Geschäftsbereichs für Siliziumkarbid-Junction-Feldeffekttransistor (SiC JFET) Technologie von Qorvo abgeschlossen, einschließlich der Tochtergesellschaft United Silicon Carbide, für 115 Millionen Dollar in bar. Die Übernahme erweitert die Marktmöglichkeiten von onsemi um 1,3 Milliarden Dollar bis 2030 und stärkt die Position im Bereich der Hoch- und Mittelspannungs-Leistungshalbleiter.
Die SiC JFET-Technologie wird das EliteSiC-Leistungsportfolio von onsemi ergänzen und die Effizienzbedürfnisse in den Stromversorgungen von KI-Rechenzentren ansprechen. In Anwendungen für Elektrofahrzeuge verbessert sie die Effizienz und Sicherheit durch Festkörper-Schalter in Batterietrenneinheiten. Die Technologie ermöglicht auch Energiespeicher-Topologien und Festkörper-Leistungsunterbrecher in industriellen Anwendungen.
- Acquisition expands market opportunity by $1.3B by 2030
- Strengthens position in high and mid voltage power semiconductors
- Enhances product portfolio for AI data centers, automotive, and industrial markets
- Strategic acquisition completed for $115M in cash, indicating strong financial position
- Cash outlay of $115M impacts immediate liquidity
Insights
The
The SiC JFET technology's integration into onsemi's EliteSiC portfolio addresses the increasing power density demands in AI infrastructure, particularly important as data centers struggle with energy efficiency amid the AI boom. For context, traditional silicon-based power solutions are reaching their physical limits, making SiC technology increasingly valuable for high-performance computing applications.
In the EV sector, the acquisition's value proposition lies in battery disconnect units, where SiC JFETs can enhance both efficiency and safety through component consolidation. This aligns with the industry's push toward higher-voltage architectures in electric vehicles, potentially giving onsemi a competitive edge in the rapidly growing e-mobility market.
This bolt-on acquisition at
The timing is particularly opportune given the surge in AI infrastructure spending and the accelerating EV adoption curve. The transaction strengthens onsemi's competitive moat in high-margin power semiconductors, potentially supporting gross margin expansion in the coming years. The all-cash nature of the deal, given onsemi's strong balance sheet, maintains financial flexibility for future strategic initiatives.
The acquisition's technical significance lies in the unique properties of SiC JFETs, which offer superior switching characteristics and thermal performance compared to traditional silicon-based solutions. In AI data center applications, where power density and efficiency are critical bottlenecks, SiC JFETs can significantly reduce power losses in AC-DC conversion stages.
For industrial applications, particularly in energy storage systems and solid-state circuit breakers, SiC JFETs enable new topologies that weren't previously feasible with silicon technology. This opens up opportunities in grid modernization and renewable energy integration, where high-efficiency power conversion is essential.
The integration of Qorvo's technology into onsemi's existing portfolio creates a more comprehensive power solution offering, potentially accelerating customer adoption and market penetration in these high-growth segments.
Addition further strengthens leadership in high and mid voltage power semiconductors and expands market opportunity by
The addition of SiC JFET technology will complement onsemi’s extensive EliteSiC power portfolio and enable the company to address the need for high energy efficiency and power density in the AC-DC stage in power supply units for AI data centers. In electric vehicle applications, SiC JFETs help improve efficiency and safety by replacing multiple components with a solid-state switch based on SiC JFET in battery disconnect units. In the industrial end-market, SiC JFETs enable certain energy storage topologies and solid-state circuit breakers.
“This acquisition further strengthens onsemi’s leadership in power semiconductors by providing disruptive and market leading technologies to our customers to solve their most pressing power density and efficiency problems in AI data centers, automotive and industrial markets,” said Simon Keeton, group president and general manager of the Power Solutions Group, onsemi. “We will continue to innovate and make investments to expand our technology leadership in providing the most comprehensive power system solutions.”
About onsemi
onsemi (Nasdaq: ON) is driving disruptive innovations to help build a better future. With a focus on automotive and industrial end-markets, the company is accelerating change in megatrends such as vehicle electrification and safety, sustainable energy grids, industrial automation, and 5G and cloud infrastructure. onsemi offers a highly differentiated and innovative product portfolio, delivering intelligent power and sensing technologies that solve the world’s most complex challenges and leads the way to creating a safer, cleaner and smarter world. onsemi is recognized as a Fortune 500® company and included in the Nasdaq-100 Index® and S&P 500® index. Learn more about onsemi at www.onsemi.com.
onsemi and the onsemi logo are trademarks of Semiconductor Components Industries, LLC. All other brand and product names appearing in this document are registered trademarks or trademarks of their respective holders.
Caution Regarding Forward-Looking Statements:
This press release includes “forward-looking statements,” as that term is defined in Section 27A of the Securities Act of 1933, as amended, and Section 21E of the Securities Exchange Act of 1934, as amended. All statements, other than statements of historical facts, included or incorporated in this press release could be deemed forward-looking statements, particularly statements about the impact of the announced acquisition of the SiC JFET technology division. Forward-looking statements are often characterized by the use of words such as “believes,” “estimates,” “expects,” “projects,” “may,” “will,” “intends,” “plans,” “anticipates,” “should” or similar expressions or by discussions of strategy, plans or intentions. All forward-looking statements in this document are made based on our current expectations, forecasts, estimates and assumptions and involve risks, uncertainties and other factors that could cause results or events to differ materially from those expressed in the forward-looking statements. Certain factors that could affect our future results or events are described under Part I, Item 1A “Risk Factors” in the 2023 Annual Report on Form 10-K filed with the Securities and Exchange Commission (“SEC”) on February 5, 2024 (the “2023 Form 10-K”) and from time to time in our other SEC reports. Readers are cautioned not to place undue reliance on forward-looking statements. We assume no obligation to update such information, which speaks only as of the date made, except as may be required by law. Investing in our securities involves a high degree of risk and uncertainty, and you should carefully consider the trends, risks and uncertainties described in this document, our 2023 Form 10-K and other reports filed with or furnished to the SEC before making any investment decision with respect to our securities. If any of these trends, risks or uncertainties actually occurs or continues, our business, financial condition or operating results could be materially adversely affected, the trading prices of our securities could decline, and you could lose all or part of your investment. All forward-looking statements attributable to us or persons acting on our behalf are expressly qualified in their entirety by this cautionary statement.
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Krystal Heaton
Director, Head of Public Relations
onsemi
(480) 242-6943
Krystal.Heaton@onsemi.com
Parag Agarwal
Vice President - Investor Relations & Corporate Development
onsemi
(602) 244-3437
investor@onsemi.com
Source: onsemi
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