Navitas and SHINRY Accelerate New-Energy Vehicle Developments with Next-Gen Power Semiconductors
- The joint lab aims to accelerate the development of New-Energy Vehicle (NEV) power systems.
- Navitas' GaNFast™ technology is expected to enable unprecedented high power density, lightweight, efficient designs for NEVs.
- The collaboration is expected to result in more efficient, higher power density, more reliable, and cost-effective power systems for NEVs.
- None.
Insights
The strategic partnership between Navitas Semiconductor and SHINRY to establish an advanced R&D laboratory marks a significant step in the evolution of New-Energy Vehicle (NEV) power systems. This collaboration is indicative of a broader industry trend where semiconductor companies are increasingly aligning with automotive manufacturers to enhance the performance and efficiency of electric vehicles (EVs). The use of gallium nitride (GaN) technology by Navitas is particularly noteworthy, as it represents a shift away from traditional silicon-based power chips. GaN is recognized for its superior high-frequency and high-efficiency characteristics, which are essential for the fast charging, acceleration and extended range required by the burgeoning electric vehicle market.
From a market perspective, this joint venture could potentially lead to a substantial competitive advantage for both Navitas and SHINRY. By pooling their respective expertise in semiconductor technology and power supply systems, they are poised to offer more efficient and reliable power solutions for NEVs. This could result in increased market share and enhanced brand reputation in the rapidly growing EV sector. The partnership also signals a commitment to innovation and sustainability, aligning with global efforts to transition towards clean, renewable energy sources.
Investors should take note of the potential financial implications of the newly established R&D lab between Navitas Semiconductor and SHINRY. The development of advanced battery-electric and fuel-cell vehicle power platforms using next-gen GaN technology could lead to a significant reduction in the time-to-market for new products. This efficiency could translate into cost savings and higher profit margins for both companies. Moreover, the collaboration may enhance Navitas' position as a leading supplier of power ICs, potentially increasing its market share and revenue in the semiconductor industry.
However, it is essential to consider the capital investment required for such R&D initiatives and the time horizon for the realization of returns. Investors should weigh the potential for long-term growth against the immediate costs and the risk associated with technological innovation in a highly competitive market. The success of this joint lab will depend on the ability of the companies to create products that meet the evolving demands of the automotive industry and to do so in a manner that is both cost-effective and scalable.
The establishment of the joint R&D lab by Navitas and SHINRY is a significant event within the automotive industry, particularly in the context of NEV development. The focus on GaNFast™ technology underscores a strategic move towards more energy-efficient power systems for vehicles. As the automotive industry continues to prioritize electrification, partnerships that foster innovation in power systems are critical. The integration of GaN technology could lead to lighter, more compact power systems that improve vehicle performance and consumer appeal.
For automotive manufacturers, the adoption of advanced semiconductor technologies like GaN and SiC is essential for staying competitive in a market that is increasingly driven by environmental considerations and regulatory pressures to reduce emissions. The collaboration between a semiconductor company and a power supply leader could set a new standard for the industry, potentially influencing future design and manufacturing processes across the sector. The joint lab's success in delivering high power density and efficient designs will likely be a key factor in determining the pace at which NEVs gain market acceptance and penetrate mainstream consumer markets.
New joint lab facility and aligned product & system roadmaps to deliver advanced battery-electric and fuel-cell vehicle power platforms
TORRANCE, Calif., Jan. 25, 2024 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, and SHINRY, global industry leader of on-board power supply and strategic supplier to Honda, Hyundai, BYD, Geely, XPENG, BAIC and many more leading automobile manufacturers, announced the opening of an advanced, joint R&D power laboratory to accelerate the development of New-Energy Vehicle (NEV) power systems enabled by Navitas’ GaNFast™ technology.
Next-gen gallium nitride (GaN) is replacing legacy silicon power chips due to superior high-frequency and high-efficiency characteristics. GaN delivers faster charging, faster acceleration and longer-range, accelerating market adoption of NEVs and the transition from fossil fuels to clean, renewable energy.
On January 16th, 2024, Peter (Jingjun) Chen, COO of SHINRY, along with Navitas’ Gene Sheridan, CEO and Navitas’ Charles (Yingjie) Zha, VP and GM plus other senior executives attended the joint lab’s opening ceremony at SHINRY headquarters in Shenzhen.
The joint lab accelerates development projects, with leading-edge GaN technology combining with innovative system-design skills and engineering talent to enable unprecedented high power density, lightweight, efficient designs that translate to faster charging and extended range, with faster time-to-market.
The joint lab brings together experienced, highly-professional engineers from Navitas and SHINRY to build efficient, collaborative R&D platforms. Navitas’ own dedicated EV system Design Center, located in Shanghai will provide comprehensive technical support for the joint lab. Navitas will not only supply SHINRY with leading-edge, trusted power devices, but will also engage in system-level R&D from the initial stages of product specification and design, through to test platforms and customized packaging solutions. The result will be more efficient, higher power density, more reliable, and cost-effective power systems for NEVs.
“SHINRY always pursues technological innovation. As early as 2012, SHINRY began applying Silicon Carbide (SiC) MOS, and in 2019, SHINRY initiated research on the application of GaN and has been actively seeking strategic partners.” said Peter (Jingjun) Chen, COO of SHINRY. “As an advanced supplier in the field, Navitas will assist in creating more advanced, energy-efficient, and higher-efficiency power system products. I believe the establishment of this joint lab will comprehensively accelerate the design and market launch of SHINRY's products and further enhance the market competitiveness of SHINRY products.”
“We are excited to join with SHINRY to establish a new lab for next-gen power semiconductors, assisting SHINRY in creating advanced power systems.” said Gene Sheridan, Navitas’ co-founder & CEO. “SHINRY's mission to change the way of travel aligns closely with Navitas' Electrify Our World™ mission. We believe that through our joint efforts, leading GaN technologies will enter the power systems of NEVs for more end-users, contributing to the vigorous growth of the new energy industry.”
About SHINRY
SHINRY, founded in 2005 and listed in the Shenzhen Stock Exchange in 2018 (SZ. 300745), is a global leading Tier 1 supplier of charging & distribution solutions for new energy vehicle. Our main business scope covers three sections: EV & PHEV, FCEV, and High-end Equipment.
SHINRY has dedicated the past 18 years to on-board power supply solutions. We continuously invest in both technology innovation and industrialization capabilities, including advanced design methods and tools, lean and smart manufacturing, quality control, and digitalization supporting both mass manufacturing and small batch production models. Our plants are certified with ISO/SAE 21434 & IATF16949 & ISO14001, QC080000, OHSAS 18001 certificates, and comply with VDA6.3.
Technology innovation is always prioritized as the company’s core value. Our stable and talented R&D team is fully devoted to developing highly reliable, integrated and cost-effective solutions for OEM clients involved in the electrification business. Moreover, the implementation of ISO26262 ASIL D, ASPICE level 3 and AutoSAR provide next generation products with higher quality on software and function safety issues.
SHINRY entered the NEV industry in 2006, and in 2013, SHINRY became the world's first to achieve mass production of Silicon Carbide (SiC) driven on-board DC-DC. In 2016, the company became the first in China to incorporate SiC driving technology into hydrogen fuel cell vehicles' DC-DC and related driving products. In 2018, SHINRY became the world's first enterprise to integrate 3rd-gen semiconductor driving with bi-directional On-Board Charger (OBC) for mass-produced vehicles.
Outstanding experience and expertise, together with independent IP, contribute to our fine reputation and solid client relationships. We serve Honda, Hyundai, BYD, Geely, Xpeng, BAIC, Changan and other automobile manufactures as a strategic supplier.
Currently, SHINRY has invested substantial research resources in both 3rd-gen semiconductor Gallium Nitride (GaN) and Silicon Carbide (SiC) driving technologies, hoping to collaborate with more partners in the third-generation semiconductor industry. Looking forward, SHINRY commits to be a leading solution provider in High Power Electronic Conversion Technology Innovation and Commercialization, as the demands of the global NEV industry continue to evolve.
About Navitas
Navitas Semiconductor (Nasdaq: NVTS) is the only pure-play, next-generation power-semiconductor company, founded in 2014. GaNFast™ power ICs integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary GeneSiC™ power devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Focus markets include mobile, consumer, data center, EV, solar, wind, smart grid, and industrial. Over 250 Navitas patents are issued or pending. Over 125 million GaN and 12 million SiC units have been shipped with excellent quality performance, and the industry’s first and only 20-year GaN warranty. Navitas was the world’s first semiconductor company to be CarbonNeutral®-certified.
Navitas, GaNFast, GaNSense, GeneSiC, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor and subsidiaries. All other brands, product names, and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.
Contact Information:
Stephen Oliver, VP Corporate Marketing & Investor Relations, ir@navitassemi.com
A photo accompanying this announcement is available at https://www.globenewswire.com/NewsRoom/AttachmentNg/8afc33ac-37a0-469c-b29e-cb5288d3c173
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