Lam Research Establishes 28nm Pitch in High-Resolution Patterning Through Dry Photoresist Technology
Lam Research (LRCX) has achieved a significant breakthrough in semiconductor manufacturing with its dry photoresist technology being qualified for 28nm pitch back end of line logic at 2nm and below by imec. The technology enhances extreme ultraviolet (EUV) lithography's resolution, productivity, and yield in next-generation semiconductor device production.
The dry resist technology provides key advantages including low-defect patterning, improved EUV sensitivity, and enhanced resolution. When paired with low NA EUV scanner at imec, the process is also extendible to high NA EUV scanner applications. Notably, the technology offers substantial sustainability benefits, consuming less energy and 5-10 times fewer raw materials compared to traditional wet chemical resist processes.
Lam Research (LRCX) ha raggiunto un importante traguardo nella produzione di semiconduttori, con la sua tecnologia di fotoresist asciutto qualificata per la logica back end of line a pitch di 28nm a 2nm e oltre da imec. Questa tecnologia migliora la risoluzione, la produttività e il rendimento della litografia a ultravioletti estremi (EUV) nella produzione di dispositivi semiconduttori di nuova generazione.
La tecnologia del resist asciutto offre vantaggi chiave tra cui la produzione di pattern a bassa difettosità, una maggiore sensibilità all'EUV e una risoluzione migliorata. Quando abbinata a scanner EUV a bassa NA presso imec, il processo è estendibile anche alle applicazioni con scanner EUV ad alta NA. È importante notare che questa tecnologia offre notevoli vantaggi in termini di sostenibilità, consumando meno energia e da 5 a 10 volte meno materie prime rispetto ai tradizionali processi di resist chimico umido.
Lam Research (LRCX) ha logrado un avance significativo en la fabricación de semiconductores, al calificar su tecnología de fotoresistencia en seco para lógica de línea de backend con un pitch de 28nm a 2nm y menos por parte de imec. Esta tecnología mejora la resolución, productividad y rendimiento de la litografía de ultravioleta extremo (EUV) en la producción de dispositivos semiconductores de próxima generación.
La tecnología de resist en seco proporciona ventajas clave como la creación de patrones con baja defectología, sensibilidad mejorada al EUV y resolución superior. Cuando se combina con escáneres EUV de baja NA en imec, el proceso también es extensible a aplicaciones con escáneres EUV de alta NA. Cabe destacar que esta tecnología ofrece beneficios sustanciales de sostenibilidad, consumiendo menos energía y de 5 a 10 veces menos materias primas en comparación con los procesos tradicionales de resist en húmedo.
램 리서치 (LRCX)는 imec에 의해 2nm 이하의 28nm 피치 백엔드 로직에 대해 건식 포토레지스트 기술이 인증받아 반도체 제조에서 중요한 돌파구를 달성했습니다. 이 기술은 차세대 반도체 소자 생산에서 극자외선(EUV) 리소그래피의 해상도, 생산성 및 수율을 향상시킵니다.
건식 레지스트 기술은 주요 이점으로 결함이 적은 패터닝, 향상된 EUV 감도 및 개선된 해상도를 제공합니다. imec의 저 NA EUV 스캐너와 결합될 경우, 이 프로세스는 고 NA EUV 스캐너 응용에도 확장될 수 있습니다. 이 기술은 상당한 지속 가능성 혜택을 제공하여 전통적인 습식 화학 레지스트 공정에 비해 에너지를 덜 소모하고 원자재는 5-10배 적게 사용합니다.
Lam Research (LRCX) a réalisé une avancée significative dans la fabrication de semi-conducteurs grâce à sa technologie de photo-résist sec, qui a été qualifiée pour la logique back end of line au pitch de 28 nm à 2 nm et en dessous par imec. Cette technologie améliore la résolution, la productivité et le rendement de la lithographie ultraviolette extrême (EUV) dans la production de dispositifs semi-conducteurs de nouvelle génération.
La technologie de résist sec offre des avantages clés, notamment un patronage à faible défaut, une sensibilité EUV améliorée et une résolution accrue. Lorsqu'elle est couplée à un scanner EUV à faible NA chez imec, le processus est également extensible aux applications de scanner EUV à haute NA. Notamment, cette technologie présente des avantages significatifs en matière de durabilité, consommant moins d'énergie et de 5 à 10 fois moins de matières premières par rapport aux processus traditionnels de résine chimique humide.
Lam Research (LRCX) hat einen bedeutenden Durchbruch in der Halbleiterproduktion erzielt, da seine Trocken-Fotolacktechnologie für die Logik im Backend mit 28nm Pitch bei 2nm und darunter von imec qualifiziert wurde. Diese Technologie verbessert die Auflösung, Produktivität und Ausbeute der extrem ultravioletten (EUV) Lithografie in der Produktion von Halbleiterbauelementen der nächsten Generation.
Die Trockenlacktechnologie bietet wichtige Vorteile, darunter fehlerarme Mustererstellung, verbesserte EUV-Empfindlichkeit und verbesserte Auflösung. In Kombination mit einem Low NA EUV-Scanner bei imec ist der Prozess auch auf Hoch-NA-EUV-Scanner-Anwendungen erweiterbar. Bemerkenswert ist, dass die Technologie erhebliche Nachhaltigkeitsvorteile bietet, da sie weniger Energie verbraucht und 5-10 Mal weniger Rohmaterialien im Vergleich zu herkömmlichen Nass-Chemikalien-Resist-Prozessen benötigt.
- Successful qualification of dry resist technology for 28nm pitch BEOL logic at 2nm and below
- Technology demonstrates superior performance with low defectivity at competitive costs
- Reduces raw material consumption by 5-10 times compared to wet chemical processes
- Enhanced EUV sensitivity and resolution improving cost, performance and yield
- None.
Insights
This breakthrough in dry photoresist technology represents a significant advancement in semiconductor manufacturing capabilities. Achieving 28nm pitch in BEOL logic at 2nm and below is a critical milestone that addresses one of the industry's most pressing challenges. The technology's qualification by imec, a highly respected research institution, validates its commercial viability.
The development impacts semiconductor fabrication in three important ways: First, it enhances EUV lithography efficiency, potentially reducing production costs through improved exposure dose management. Second, the demonstrated low defectivity at 28nm pitch enables higher yield rates, which directly affects profit margins. Third, the technology's compatibility with both current low NA and future high NA EUV scanners ensures longevity and scalability for next-generation chip production.
For context, achieving 28nm pitch with acceptable defectivity levels has been a significant hurdle in semiconductor scaling. Traditional wet resist processes struggle with pattern collapse and resolution limitations at these dimensions. Lam's dry resist technology effectively addresses these challenges while offering substantial sustainability benefits through reduced material consumption.
This technological advancement strengthens Lam Research's competitive position in the critical EUV ecosystem. The semiconductor equipment market for advanced nodes is experiencing robust growth and this innovation directly addresses the increasing demand for more sophisticated patterning solutions. The qualification by imec typically precedes adoption by major foundries, suggesting potential revenue growth opportunities in the next 12-24 months.
The technology's dual advantage of improving performance while reducing material consumption by 5-10x presents a compelling value proposition for semiconductor manufacturers facing rising costs and environmental pressures. This could accelerate adoption rates among major foundries and IDMs, potentially expanding Lam's market share in the advanced patterning segment.
Furthermore, the compatibility with future high NA EUV systems positions Lam favorably for the next generation of semiconductor manufacturing, where equipment suppliers with proven advanced node capabilities will likely capture premium pricing power.
"Lam's dry photoresist technology provides unparalleled low-defectivity, high-resolution patterning," said Vahid Vahedi, chief technology and sustainability officer at Lam Research. "We are excited to offer this technology to imec and its partners as a critical process in the design and manufacturing of leading-edge semiconductor devices."
As chipmakers move to advanced technology nodes, transistor features and pitch sizes continue to get smaller. Ambitious next-generation device roadmaps require direct-print 28nm pitch BEOL to enable scaling. Small pitch size can often result in poor pattern resolution, but Lam's dry resist technology helps optimize patterning by overcoming the well-known tradeoff between EUV exposure dose (cost) and defectivity (yield).
At imec, Lam's 28nm pitch dry resist processes are paired with a low NA EUV scanner, and extendible to a high NA EUV scanner. They enhance EUV sensitivity and the resolution of each wafer pass — improving cost, performance and yield. In addition, dry resist offers key sustainability benefits by consuming less energy and five to ten times less raw materials than existing wet chemical resist processes. Lam's technology outperforms wet resist materials with exceptionally low defectivity at competitive cost.
"Through joint research and development, imec acts as a neutral partner for equipment manufacturers, demonstrating feasibility of new materials and equipment, supporting process development, and providing integrated device manufacturers and foundries early access to innovative processes that accelerate their manufacturing roadmaps," said Steven Scheer, vice president of process technology at imec. "Lam's dry resist achieves excellent defectivity and fidelity at competitive dose."
Additional Media Resources:
- Press release: Lam Research Unveils Technology Breakthrough for EUV Lithography
- Blog: Why New Photoresist Technology Is Critical
About Lam Research
Lam Research Corporation is a global supplier of innovative wafer fabrication equipment and services to the semiconductor industry. Lam's equipment and services allow customers to build smaller and better performing devices. In fact, today, nearly every advanced chip is built with Lam technology. We combine superior systems engineering, technology leadership, and a strong values-based culture, with an unwavering commitment to our customers. Lam Research (Nasdaq: LRCX) is a FORTUNE 500® company headquartered in
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Statements made in this press release that are not of historical fact are forward-looking statements and are subject to the safe harbor provisions created by the Private Securities Litigation Reform Act of 1995. Such forward-looking statements relate to, but are not limited to: industry and market trends and expectations, and product performance, including sustainability benefits. Some factors that may affect these forward-looking statements include: trade regulations, export controls, trade disputes, and other geopolitical tensions may inhibit our ability to sell our products; business, political and/or regulatory conditions in the consumer electronics industry, the semiconductor industry and the overall economy may deteriorate or change; the actions of our customers and competitors may be inconsistent with our expectations; supply chain cost increases and other inflationary pressures have impacted and may continue to impact our profitability; supply chain disruptions or manufacturing capacity constraints may limit our ability to manufacture and sell our products; and natural and human-caused disasters, disease outbreaks, war, terrorism, political or governmental unrest or instability, or other events beyond our control may impact our operations and revenue in affected areas; as well as the other risks and uncertainties that are described in the documents filed or furnished by us with the Securities and Exchange Commission, including specifically the Risk Factors described in our annual report on Form 10-K for the fiscal year ended June 30, 2024 and our quarterly report on Form 10-Q for the fiscal quarter ended September 29, 2024. These uncertainties and changes could materially affect the forward-looking statements and cause actual results to vary from expectations in a material way. The Company undertakes no obligation to update the information or statements made in this release.
Company Contacts:
Allison L. Parker
Media Relations
(510) 572-9324
publicrelations@lamresearch.com
Ram Ganesh
Investor Relations
(510) 572-1615
investor.relations@lamresearch.com
Source: Lam Research Corporation, (Nasdaq: LRCX)
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