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SK hynix Starts Mass Production of World's First 321-High NAND

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SK hynix has begun mass production of the world's first 321-high 4D NAND Flash with 1Tb capacity, featuring triple level cell technology. The breakthrough comes through the innovative 'Three Plugs' process technology, which enables stacking over 300 layers. The new product shows 12% improvement in data transfer speed, 13% better reading performance, and 10% enhanced power efficiency compared to previous generation. Production efficiency improved by 59%. The company plans to supply these products to customers from first half 2025, targeting AI applications that require low power and high performance.

SK hynix ha avviato la produzione di massa del primo 321-high 4D NAND Flash al mondo con una capacità di 1Tb, caratterizzato dalla tecnologia Triple Level Cell. Questa innovazione è stata possibile grazie alla tecnologia del processo 'Three Plugs', che consente di impilare più di 300 strati. Il nuovo prodotto mostra un miglioramento del 12% nella velocità di trasferimento dei dati, un 13% di prestazioni di lettura migliori e un 10% di efficienza energetica migliorata rispetto alla generazione precedente. L'efficienza produttiva è aumentata del 59%. L'azienda prevede di fornire questi prodotti ai clienti dalla prima metà del 2025, mirando a applicazioni di intelligenza artificiale che richiedono basse potenze e alte prestazioni.

SK hynix ha comenzado la producción en masa del primer 321-high 4D NAND Flash del mundo con capacidad de 1Tb, que presenta tecnología de celdas de nivel triple. Este avance se ha logrado gracias a la innovadora tecnología de proceso 'Three Plugs', que permite apilar más de 300 capas. El nuevo producto muestra una mejora del 12% en la velocidad de transferencia de datos, un 13% de mejor rendimiento de lectura y un 10% de eficiencia energética mejorada en comparación con la generación anterior. La eficiencia de producción aumentó en un 59%. La compañía planea suministrar estos productos a los clientes en la primera mitad de 2025, con el objetivo de aplicaciones de inteligencia artificial que requieren baja potencia y alto rendimiento.

SK hynix는 세계 최초로 1Tb 용량의 321-high 4D NAND Flash의 대량 생산을 시작했습니다. 이 제품은 트리플 레벨 셀 기술을 특징으로 합니다. 이번 혁신은 300층 이상의 적층을 가능하게 하는 혁신적인 'Three Plugs' 공정 기술 덕분입니다. 새로운 제품은 이전 세대에 비해 12% 향상된 데이터 전송 속도, 13% 개선된 읽기 성능, 10% 향상된 전력 효율성을 보여줍니다. 생산 효율성은 59% 향상되었습니다. 회사는 2025년 상반기부터 이러한 제품을 고객에게 공급할 계획이며, 낮은 전력과 높은 성능이 요구되는 AI 애플리케이션을 겨냥하고 있습니다.

SK hynix a lancé la production de masse de la première mémoire Flash 4D NAND de 321 hauteurs au monde, avec une capacité de 1 To, dotée de la technologie Triple Level Cell. Cette avancée est rendue possible grâce à la technologie de processus innovante 'Three Plugs', qui permet d'empiler plus de 300 couches. Le nouveau produit présente une amélioration de 12% de la vitesse de transfert des données, une meilleure performance de lecture de 13% et une efficacité énergétique améliorée de 10% par rapport à la génération précédente. L'efficacité de production a été améliorée de 59%. L'entreprise prévoit de fournir ces produits aux clients à partir de la première moitié de 2025, ciblant des applications d'IA nécessitant une faible consommation d'énergie et une haute performance.

SK hynix hat mit der Serienproduktion des weltweit ersten 321-high 4D NAND Flash mit einer Kapazität von 1Tb begonnen, das mit Triple-Level-Cell-Technologie ausgestattet ist. Der Durchbruch wurde durch die innovative 'Three Plugs' Prozess-Technologie erzielt, die das Stapeln von über 300 Schichten ermöglicht. Das neue Produkt zeigt eine 12%ige Verbesserung der Datenübertragungsgeschwindigkeit, 13% bessere Leseleistung und 10% verbesserte Energieeffizienz im Vergleich zur vorherigen Generation. Die Produktionseffizienz wurde um 59% gesteigert. Das Unternehmen plant, diese Produkte ab der ersten Hälfte 2025 an Kunden zu liefern, um KI-Anwendungen anzusprechen, die eine niedrige Leistung und hohe Leistung erfordern.

Positive
  • First-to-market with 321-high NAND technology
  • 59% improvement in production efficiency
  • 12% faster data transfer speed
  • 13% better reading performance
  • 10% enhancement in power efficiency
Negative
  • None.
  • Industry's first 321-high NAND of 1Tb developed for supply in 1H25
  • "Three Plugs" process technology leads to technological breakthrough for stacking, improves speed, power efficiency
  • Company on track to becoming "Full Stack AI Memory Provider" with enhanced competitiveness in AI storage

SEOUL, South Korea, Nov. 20, 2024 /PRNewswire/ -- SK hynix Inc. (or "the company", www.skhynix.com) announced today that it has started mass production of the world's first triple level cell*-based 321-high 4D NAND Flash with 1Tb capacity.

*NAND Flash products are categorized into single-, multi-, triple-, quadruple-, and penta-level cells, depending on the number of the information in the format of bit unit is stored in a cell. A bigger number of information stored means more data can be stored in the same space.

Following its previous record as the industry's first provider of the world's highest 238-layer NAND since June last year, SK hynix has become the world's first supplier of the NAND with more than 300 layers by finding a technological breakthrough for stacking. The company plans to provide the 321-high products to customers from the first half of next year.

Stacking more than 300 layers came into reality as the company successfully adopted the "3 plugs"** process technology. Known for an excellent production efficiency, the process electrically connects three plugs through an optimized follow-up process after three times of plug processes are finished. For the process, SK hynix developed a low-stress*** material, while introducing the technology that automatically corrects alignments among the plugs.

With the adoption of the same development platform from the 238-high NAND on the 321-high product, the company could also improve the productivity by 59%, compared with the previous generation, by minimizing any impacts from a process switch.

** Plug: a vertical hole through layers of substrates aimed at creating cells at once
*** Low Stress: Preventing wafer warpage by changing the material into the plugs

The latest product comes with an improvement of 12% in data transfer speed and 13% in reading performance, compared with the previous generation. It also enhances data reading power efficiency by more than 10%.

SK hynix plans to steadily expand the use of the 321-high products by providing them to the nascent AI applications, which require low power and high performance.

Jungdal Choi, Head of NAND Development at SK hynix, said that the latest development brings the company a step closer to the leadership of the AI storage market represented by SSD for AI data centers and on-device AI. "SK hynix is on track to advancing to the Full Stack AI Memory Provider by adding a perfect portfolio in the ultra-high performance NAND space on top of the DRAM business led by HBM."

About SK hynix Inc.

SK hynix Inc., headquartered in Korea, is the world's top tier semiconductor supplier offering Dynamic Random Access Memory chips ("DRAM"), flash memory chips ("NAND flash") and CMOS Image Sensors ("CIS") for a wide range of distinguished customers globally. The Company's shares are traded on the Korea Exchange, and the Global Depository shares are listed on the Luxemburg Stock Exchange. Further information about SK hynix is available at www.skhynix.com, news.skhynix.com.

Cision View original content to download multimedia:https://www.prnewswire.com/news-releases/sk-hynix-starts-mass-production-of-worlds-first-321-high-nand-302312210.html

SOURCE SK hynix Inc.

FAQ

When will SK hynix start supplying the 321-high NAND products to customers?

SK hynix plans to supply the 321-high NAND products to customers starting from the first half of 2025.

What are the performance improvements of SK hynix's new 321-high NAND compared to previous generation?

The new 321-high NAND offers 12% improvement in data transfer speed, 13% better reading performance, and over 10% enhancement in power efficiency compared to the previous generation.

What technology breakthrough enabled SK hynix to achieve 321-layer NAND stacking?

SK hynix achieved 321-layer NAND stacking through the 'Three Plugs' process technology, which electrically connects three plugs through an optimized follow-up process using low-stress material.

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