Alpha and Omega Semiconductor Announces XSPairFET™ Buck-Boost MOSFET for Higher Power USB PD 3.1 EPR Applications
- None.
- None.
Insights
The introduction of the AONZ66412 XSPairFET™ by Alpha and Omega Semiconductor Limited represents a noteworthy advancement in power semiconductor technology. This development is particularly significant for the design of power conversion systems in portable electronics. The AONZ66412's compact footprint and high-efficiency capabilities are a response to the increasing demand for more power-dense solutions in smaller form factors.
From an electrical engineering standpoint, the integration of two 40V N-Channel MOSFETs in a half-bridge configuration within a single package is a technical achievement that can lead to reduced parasitic inductance and switch node ringing, which are common challenges in high-frequency power conversion. The direct connection of the low-side MOSFET source to the lead frame enhances thermal performance, allowing for higher power handling and reliability. The capability to operate at 1MHz further allows designers to use smaller inductors, contributing to the overall reduction in size and cost of the power supply design.
From a supply chain perspective, the 16-week lead time for the AONZ66412 indicates a relatively stable production and delivery schedule, which is important for manufacturers planning their product development cycles. The pricing point of $1.56 per unit in 1,000-piece quantities suggests competitive positioning within the market, potentially influencing the procurement strategies of OEMs and ODMs in the consumer electronics sector.
Moreover, the ability of the AONZ66412 to replace two single DFN5x6 MOSFETs not only simplifies the production process but also reduces the complexity of inventory management for manufacturers. This simplification could lead to more efficient logistics and potentially lower costs in the long term, which can be a significant factor when companies are deciding on the components for new designs.
The release of the AONZ66412 XSPairFET™ aligns with the observed market trend towards USB PD 3.1 Extended Power Range (EPR) applications. As devices increasingly require higher power delivery over USB-C, the demand for components that can support these specifications is expected to grow. This MOSFET is positioned to cater to this emerging market segment, potentially capturing a significant share due to its high-efficiency performance and power density improvements.
Given that USB PD 3.1 EPR is set to become the new standard for a wide range of consumer electronics, including notebooks and power banks, the AONZ66412's optimized design for these applications could make it a preferred choice for manufacturers. The potential for increased adoption of the AONZ66412 could have a positive impact on AOS's market presence and financial performance, making it a company to watch for stakeholders in the semiconductor and consumer electronics industries.
Offering a compact footprint to streamline PCB design, the AONZ66412 XSPairFET™ helps improve power density while meeting high-efficiency Type C performance demands
Offering a compact footprint to streamline PCB design, the AONZ66412 XSPairFET™ helps improve power density while meeting high-efficiency Type C performance demands (Graphic: Business Wire)
The AONZ66412 can replace two single DFN5x6 MOSFETs, reducing the PCB area and simplifying the layout of the 4-switch buck-boost architecture while enabling a higher efficiency design. These benefits make the AONZ66412 ideal for buck-boost converters in Type-C USB 3.1 EPR applications, including notebook, USB hub, and power bank designs.
The AONZ66412 is an extension to the AOS XSPairFET™ lineup that features the latest bottom source packaging technology and lower parasitic inductance for reduced switch node ringing. Engineered with integrated high-side and low-side MOSFETs (3.8mOhms maximum on-resistance for each FET) within a DFN5x6 symmetric XSPairFET™ package, the low-side MOSFET source of the AONZ66412 is connected directly to a large paddle on the lead frame. This allows for improved thermals, as this paddle can be directly connected to the ground plane on the PCB. The improved package parasitics make 1MHz operation achievable, allowing inductor size and height to be reduced. AONZ66412 has been tested to achieve
“AOS specifically designed the AONZ66412 to meet EPR Type C PD application demands. AONZ66412 will reduce board space and improve power density to achieve the high-efficiency performance goals designers have set for this widely adopted USB-PD Type C application. AOS continues to be a leading innovator of buck-boost architecture solutions,” said Rack Tsai, Marketing Director of MOSFET product line at AOS.
Technical Highlights
Part Number |
Package |
VIN
|
VGS
|
RDS(ON) (mΩ max) at VGS= |
VGS (±V) (max V) |
Ciss (pF) |
Coss (pF) |
Crss (pF) |
Qg (nC) |
Qgd (nC) |
||
10V |
4.5V |
|||||||||||
DFN 5x6 |
High Side
|
40 |
20 |
2.4 |
3.8 |
2.3 |
3100 |
560 |
45 |
18 |
2.8 |
|
Low Side
|
40 |
20 |
2.4 |
3.8 |
2.3 |
3100 |
560 |
45 |
18 |
2.8 |
||
Pricing and Availability
The AONZ66412 is immediately available in production quantities with a lead time of 16 weeks. The unit price in 1,000-piece quantities is
About AOS
Alpha and Omega Semiconductor Limited, or AOS, is a designer, developer, and global supplier of a broad range of discrete power devices, wide band gap power devices, power management ICs, and modules, including a wide portfolio of Power MOSFET, SiC, IGBT, IPM, TVS, HV Gate Drivers, Power IC, and Digital Power products. AOS has developed extensive intellectual property and technical knowledge that encompasses the latest advancements in the power semiconductor industry, which enables us to introduce innovative products to address the increasingly complex power requirements of advanced electronics. AOS differentiates itself by integrating its Discrete and IC semiconductor process technology, product design, and advanced packaging know-how to develop high-performance power management solutions. AOS’ portfolio of products targets high-volume applications, including portable computers, flat-panel TVs, LED lighting, smartphones, battery packs, consumer and industrial motor controls, automotive electronics, and power supplies for TVs, computers, servers, and telecommunications equipment. For more information, please visit www.aosmd.com.
Forward-Looking Statements
This press release contains forward-looking statements that are based on current expectations, estimates, forecasts, and projections of future performance based on management’s judgment, beliefs, current trends, and anticipated product performance. These forward-looking statements include, without limitation, references to the efficiency and capability of new products and the potential to expand into new markets. Forward-looking statements involve risks and uncertainties that may cause actual results to differ materially from those contained in the forward-looking statements. These factors include but are not limited to, the actual product performance in volume production, the quality and reliability of the product, our ability to achieve design wins, the general business and economic conditions, the state of the semiconductor industry, and other risks as described in the Company’s annual report and other filings with the
View source version on businesswire.com: https://www.businesswire.com/news/home/20240326262426/en/
Media Contact: Mina Galvan
Tel: 408.789.3233
Email: mina.galvan@aosmd.com
Source: Alpha and Omega Semiconductor Limited
FAQ
What is the product introduced by Alpha and Omega Semiconductor for Buck-Boost converters in USB PD 3.1 EPR applications?
What is the maximum power supported by USB PD 3.1 EPR?
What are the key features of the AONZ66412 XSPairFET™ MOSFET?
What is the on-resistance of the high-side and low-side MOSFETs in the AONZ66412 XSPairFET™ MOSFET?
What is the efficiency achieved by the AONZ66412 in typical USB PD 3.1 EPR conditions?
What is the pricing and availability of the AONZ66412 XSPairFET™ MOSFET?
