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Vishay Intertechnology 600 V E Series Power MOSFET in Compact Top-Side Cooling PowerPAK® 8 x 8LR Delivers Industry’s Lowest RDS(ON)*Qg FOM

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Vishay Intertechnology introduces a fourth-generation 600 V E Series power MOSFET in the new PowerPAK® 8 x 8LR package, delivering industry-leading efficiency and power density for various applications. The device offers reduced on-resistance, lower resistance times gate charge, and higher current in a smaller footprint compared to previous models. It is designed to enhance efficiency in power systems, providing significant improvements in power factor correction and DC/DC converter blocks.

Vishay Intertechnology presenta il MOSFET di potenza della Serie E di quarta generazione a 600 V, nel nuovo pacchetto PowerPAK® 8 x 8LR, che offre un'efficienza leader nel settore e una densità di potenza elevata per diverse applicazioni. Il dispositivo riduce la resistenza allo stato acceso, diminuisce il prodotto della resistenza per la carica del gate ed offre una corrente maggiore in un ingombro ridotto rispetto ai modelli precedenti. È progettato per migliorare l'efficienza nei sistemi di alimentazione, portando notevoli miglioramenti nella correzione del fattore di potenza e nei blocchi convertitori DC/DC.
Vishay Intertechnology introduce el MOSFET de potencia de la Serie E de cuarta generación a 600 V en el nuevo empaque PowerPAK® 8 x 8LR, ofreciendo eficiencia líder en la industria y alta densidad de potencia para diversas aplicaciones. Este dispositivo ofrece menor resistencia en estado conducción, reducción del producto de resistencia por carga de compuerta y mayor corriente en una huella más compacta comparado con modelos anteriores. Está diseñado para aumentar la eficiencia en los sistemas de potencia, proporcionando mejoras significativas en la corrección del factor de potencia y los bloques convertidores DC/DC.
비쉐이 인터테크놀로지는 산업 선도적인 효율성과 높은 전력 밀도를 제공하는 새로운 PowerPAK® 8 x 8LR 패키지의 제4세대 600V E 시리즈 파워 MOSFET을 선보입니다. 이 장치는 이전 모델에 비해 저항을 줄이고, 게이트 충전 시간에 대한 저항을 낮추며, 더 작은 풋프린트에서 더 높은 전류를 제공합니다. 전력 시스템의 효율성을 향상시키도록 설계되었으며, 전력 인자 보정 및 DC/DC 컨버터 블록에서 현저한 향상을 제공합니다.
Vishay Intertechnology introduit le MOSFET de puissance de la Série E de quatrième génération à 600 V dans le nouveau boîtier PowerPAK® 8 x 8LR, offrant une efficacité et une densité de puissance de premier plan dans l'industrie pour diverses applications. Ce dispositif diminue la résistance à l'état passant, réduit le produit de la résistance par la charge de la grille et augmente le courant dans une empreinte plus petite comparée aux modèles précédents. Il est conçu pour améliorer l'efficacité dans les systèmes d'alimentation, apportant des améliorations significatives dans la correction du facteur de puissance et les blocs de convertisseurs DC/DC.
Vishay Intertechnology stellt den vierte Generation des 600V E Series Power MOSFET im neuen PowerPAK® 8 x 8LR Gehäuse vor, der branchenführende Effizienz und Leistungsdichte für verschiedene Anwendungen bietet. Das Gerät verringert den Widerstand im eingeschalteten Zustand, senkt den Widerstand mal Gate-Ladung und bietet höhere Stromstärke in einem kleineren Fußabdruck im Vergleich zu früheren Modellen. Es ist darauf ausgelegt, die Effizienz in Stromsystemen zu verbessern, mit signifikanten Verbesserungen bei der Leistungsfaktorkorrektur und DC/DC-Wandlerblocks.
Positive
  • Enhanced efficiency and power density for telecom, industrial, and computing applications

  • Significant reductions in on-resistance and resistance times gate charge

  • Higher current in a smaller footprint compared to previous models

  • Addressing the need for efficiency and power density improvements in power conversion applications

  • Designed to save energy and increase efficiency in power systems

Negative
  • Increased competition in the market for power MOSFETs

  • Potential challenges in adoption due to transition from previous models

  • Possible need for additional testing and validation for compatibility with existing systems

Fourth-Generation Device Enables Higher Power Ratings and Density Versus D²PAK While Lowering Conduction and Switching Losses to Increase Efficiency

MALVERN, Pa., May 01, 2024 (GLOBE NEWSWIRE) -- To provide higher efficiency and power density for telecom, industrial, and computing applications, Vishay Intertechnology, Inc. (NYSE: VSH) today introduced its first fourth-generation 600 V E Series power MOSFET in the new PowerPAK® 8 x 8LR package. Compared to previous-generation devices, the Vishay Siliconix n-channel SiHR080N60E slashes on-resistance by 27 % and resistance times gate charge, a key figure of merit (FOM) for 600 V MOSFETs used in power conversion applications, by 60 % while providing higher current in a smaller footprint than devices in the D²PAK package.

Vishay offers a broad line of MOSFET technologies that support all stages of the power conversion process, from high voltage inputs to the low voltage outputs required to power the latest high tech equipment. With the SiHR080N60E and other devices in the fourth-generation 600 V E Series family, the company is addressing the need for efficiency and power density improvements in two of the first stages of the power system architecture — power factor correction (PFC) and subsequent DC/DC converter blocks. Typical applications will include servers, edge computing, super computers, and data storage; UPS; high intensity discharge (HID) lamps and fluorescent ballast lighting; telecom SMPS; solar inverters; welding equipment; induction heating; motor drives; and battery chargers.

Measuring 10.42 mm by 8 mm by 1.65 mm, the SiHR080N60E’s compact PowerPAK 8 x 8LR package features a 50.8 % smaller footprint than the D²PAK while offering a 66 % lower height. Due to its top-side cooling, the package delivers excellent thermal capability, with an extremely low junction to case (drain) thermal resistance of 0.25 °C/W. This allows for 46 % higher current than the D²PAK at the same on-resistance level, enabling dramatically higher power density. In addition, the package’s gullwing leads provide excellent temperature cycle capability.

Built on Vishay’s latest energy-efficient E Series superjunction technology, the SiHR080N60E features low typical on-resistance of 0.074 Ω at 10 V and ultra low gate charge down to 42 nC. The resulting FOM is an industry-low 3.1 Ω*nC, which translates into reduced conduction and switching losses to save energy and increase efficiency in power systems > 2 kW. For improved switching performance in hard-switched topologies such as PFC, half-bridge, and two-switch forward designs, the MOSFET released today provides low typical effective output capacitances Co(er) and Co(tr) of 79 pF and 499 pF, respectively. The package also provides a Kelvin connection for improved switching efficiency.

The device is RoHS-compliant and halogen-free, and it is designed to withstand overvoltage transients in avalanche mode with guaranteed limits through 100 % UIS testing.

Samples and production quantities of the SiHR080N60E are available now. For lead time information, please contact your local sales office.

Vishay manufactures one of the world’s largest portfolios of discrete semiconductors and passive electronic components that are essential to innovative designs in the automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical markets. Serving customers worldwide, Vishay is The DNA of tech.® Vishay Intertechnology, Inc. is a Fortune 1,000 Company listed on the NYSE (VSH). More on Vishay at www.Vishay.com.

The DNA of tech® is a registered trademark of Vishay Intertechnology, Inc. PowerPAK is a registered trademark of Siliconix incorporated.

Link to product datasheet:
http://www.vishay.com/ppg?92494 (SiHR080N60E)

Link to product photo:
https://www.flickr.com/photos/vishay/albums/72177720316480848

Editorial Contact:
Bob Decker
Redpines
Tel: +1 415 409 0233
bob.decker@redpinesgroup.com


FAQ

What is the purpose of Vishay Intertechnology's fourth-generation 600 V E Series power MOSFET?

Vishay Intertechnology's fourth-generation 600 V E Series power MOSFET aims to provide higher efficiency and power density for telecom, industrial, and computing applications.

How does the SiHR080N60E differ from previous models in terms of performance?

The SiHR080N60E offers reduced on-resistance by 27% and resistance times gate charge by 60%, along with higher current in a smaller footprint compared to previous models.

What are the typical applications of the SiHR080N60E power MOSFET?

Typical applications include servers, edge computing, super computers, data storage, UPS, HID lamps, telecom SMPS, solar inverters, welding equipment, induction heating, motor drives, and battery chargers.

What are the key features of the PowerPAK 8 x 8LR package?

The PowerPAK 8 x 8LR package offers a 50.8% smaller footprint than the D²PAK and a 66% lower height, with top-side cooling for excellent thermal capability.

Where can samples and production quantities of the SiHR080N60E be obtained?

Samples and production quantities of the SiHR080N60E are available now. For lead time information, contact your local sales office.

Vishay Intertechnology, Inc.

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