Vishay Intertechnology 40 V MOSFET in PowerPAK® 10x12 Package Offers Best in Class RDS(ON) of 0.34 mΩ to Increase Efficiency
Vishay Intertechnology (NYSE: VSH) has introduced a new 40 V TrenchFET® Gen V n-channel power MOSFET in the PowerPAK® 10x12 package. The SiJK140E features best-in-class on-resistance of 0.34 mΩ, representing a 32% reduction compared to competing devices and 58% lower than 40 V MOSFETs in TO-263-7L packages.
The device offers enhanced efficiency with minimal power losses and improved thermal performance with a RthJC of 0.21 °C/W. It features a bond-wireless design supporting continuous drain current up to 795 A, significantly higher than TO-263-7L solutions to 200 A. The PowerPAK 10x12 package provides 27% PCB space savings and 50% lower profile compared to TO-263-7L.
Vishay Intertechnology (NYSE: VSH) ha lanciato un nuovo MOSFET di potenza n-channel TrenchFET® Gen V da 40 V nella confezione PowerPAK® 10x12. Il SiJK140E presenta una resistenza on-lettura tra le migliori della categoria, pari a 0,34 mΩ, con una riduzione del 32% rispetto ai dispositivi concorrenti e un abbattimento del 58% rispetto ai MOSFET da 40 V in confezioni TO-263-7L.
Il dispositivo offre un'efficienza migliorata con perdite di potenza minime e prestazioni termiche ottimizzate con un RthJC di 0,21 °C/W. È caratterizzato da un design senza fili di collegamento che supporta una corrente di scarico continua fino a 795 A, notevolmente superiore alle soluzioni TO-263-7L che arrivano a 200 A. La confezione PowerPAK 10x12 consente risparmi del 27% in termini di spazio PCB e ha un profilo ridotto del 50% rispetto ai TO-263-7L.
Vishay Intertechnology (NYSE: VSH) ha presentado un nuevo MOSFET de potencia n-channel TrenchFET® Gen V de 40 V en el paquete PowerPAK® 10x12. El SiJK140E cuenta con una resistencia de encendido líder en su clase de 0,34 mΩ, lo que representa una reducción del 32% en comparación con los dispositivos competidores y un 58% menos que los MOSFET de 40 V en paquetes TO-263-7L.
El dispositivo ofrece una eficiencia mejorada con pérdidas de potencia mínimas y un rendimiento térmico mejorado con un RthJC de 0,21 °C/W. Presenta un diseño sin hilo de unión que soporta una corriente de drenaje continua de hasta 795 A, significativamente más alta que las soluciones TO-263-7L que alcanzan los 200 A. El paquete PowerPAK 10x12 proporciona un ahorro del 27% en el espacio de PCB y un perfil un 50% más bajo en comparación con los TO-263-7L.
Vishay Intertechnology (NYSE: VSH)는 새롭고 고급 트렌치펫(TrenchFET®) Gen V n-채널 전력 MOSFET를 40V로 PowerPAK® 10x12 패키지에서 출시했습니다. SiJK140E는 동급 최고의 온 저항 0.34mΩ를 자랑하며, 이는 경쟁 장치에 비해 32% 감소한 수치로, TO-263-7L 패키지의 40V MOSFET보다 58% 낮습니다.
이 장치는 최소한의 전력 손실로 향상된 효율성을 제공하며, RthJC는 0.21 °C/W로 열 성능이 개선되었습니다. 연속 드레인 전류를 최대 795A까지 지원하는 무선 본드 디자인이 특징이며, 이는 TO-263-7L 솔루션의 200A보다 상당히 높습니다. PowerPAK 10x12 패키지는 PCB 공간을 27% 절약하고 TO-263-7L에 비해 프로필이 50% 낮습니다.
Vishay Intertechnology (NYSE: VSH) a introduit un nouveau MOSFET de puissance n-channel TrenchFET® Gen V de 40 V dans le boîtier PowerPAK® 10x12. Le SiJK140E présente une résistance à l'état passant parmi les meilleures de sa catégorie, de 0,34 mΩ, soit une réduction de 32 % par rapport aux dispositifs concurrents et 58 % inférieure à celle des MOSFET de 40 V dans les emballages TO-263-7L.
Ce dispositif offre une efficacité améliorée avec des pertes de puissance minimales et des performances thermiques accrues avec un RthJC de 0,21 °C/W. Il dispose d'un design sans fil pour le raccordement, supportant un courant de drain continu allant jusqu'à 795 A, ce qui est bien supérieur aux solutions TO-263-7L qui atteignent 200 A. Le boîtier PowerPAK 10x12 permet une économie de 27 % d'espace PCB et un profil réduit de 50 % par rapport aux TO-263-7L.
Vishay Intertechnology (NYSE: VSH) hat einen neuen 40V TrenchFET® Gen V n-Kanal Leistungsmosfet im PowerPAK® 10x12 Gehäuse vorgestellt. Der SiJK140E bietet einen branchenführenden Einschaltwiderstand von 0,34 mΩ, was einer Reduzierung von 32% im Vergleich zu konkurrierenden Geräten und 58% niedriger als 40 V MOSFETs im TO-263-7L Gehäuse entspricht.
Das Gerät bietet eine verbesserte Effizienz mit minimalen Leistungs Verlusten und eine verbesserte thermische Leistung mit einem RthJC von 0,21 °C/W. Es verfügt über ein drahtloses Design, das einen kontinuierlichen Drain-Strom von bis zu 795 A unterstützt, was erheblich höher ist als die TO-263-7L Lösungen mit 200 A. Das PowerPAK 10x12 Gehäuse bietet eine Einsparung von 27% beim PCB-Platzbedarf und hat ein 50% flacheres Profil im Vergleich zu TO-263-7L.
- 32% lower on-resistance compared to competing devices
- 795 A continuous drain current capability, 397% higher than TO-263-7L solutions
- 27% PCB space savings and 50% lower profile compared to TO-263-7L
- Improved reliability by requiring one device instead of two in parallel
- 36-week lead time for production quantities
Insights
This new MOSFET launch represents a significant technological advancement in power semiconductor design. The SiJK140E achieves 32% lower on-resistance than competing devices and 58% better performance than TO-263-7L packages, marking a substantial efficiency improvement. The device's 795A current capability is particularly impressive, nearly quadrupling the typical 200A limit of traditional packages.
The bond-wireless design and PowerPAK 10x12 package bring dual benefits - enhanced electrical performance through reduced parasitic inductance and 27% smaller footprint compared to TO-263-7L packages. These improvements directly translate to better power density and thermal management, important for industrial applications like motor drives and welding equipment.
The high threshold voltage of 2.4Vgs adds reliability by preventing accidental triggering, while the low RthJC of 0.21 °C/W ensures superior thermal performance. These specifications position the product as a potential market leader in the industrial power MOSFET segment.
Space-Saving Device Features BWL Design and High ID to 795 A to Increase Power Density, While Low RthJC of 0.21 °C/W Improves Thermal Performance
MALVERN, Pa., Dec. 04, 2024 (GLOBE NEWSWIRE) -- To provide higher efficiency and power density for industrial applications, Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new 40 V TrenchFET® Gen V n-channel power MOSFET in the PowerPAK® 10x12 package with best in class on-resistance. Compared to competing devices in the same footprint, the Vishay Siliconix SiJK140E slashes on-resistance by 32 % while offering 58 % lower on-resistance than 40 V MOSFETs in the TO-263-7L.
With on-resistance down to 0.34 m typical at 10 V, the device released today minimizes power losses from conduction to increase efficiency while improving thermal performance with a low RthJC of 0.21 C/W typical. By allowing designers to utilize one device instead of two in parallel to achieve the same low on-resistance, the SiJK140E also improves reliability and mean time between failures (MTBF).
The MOSFET features a bond-wireless (BWL) design that minimizes parasitic inductance while maximizing current capability. While TO-263-7L solutions in bond-wired (BW) packages are limited to currents of 200 A, the SiJK140E offers a continuous drain current up to 795 A for increased power density while providing a robust SOA capability. Occupying an area of 120 mm2, the device’s PowerPAK 10x12 package saves 27 % PCB space compared to the TO-263-7L while offering a 50 % lower profile.
The SiJK140E is ideal for synchronous rectification, hot swap switching, and OR-ing functionality. Typical applications will include motor drive controls, power tools, welding equipment, plasma cutting machines, battery management systems, robotics, and 3D printers. To avoid shoot-through in these products, the standard-level FET offers a high threshold voltage of 2.4Vgs. RoHS-compliant and halogen-free, the MOSFET is 100 % Rg and UIS tested.
Comparison Table PowerPAK 10 x 12 vs. TO-263-7L
| Part number | SiJK140E | SUM40014M | Performance Improved | |
| Package | PowerPAK10x12 | TO-263-7L | - | |
| Dimensions (mm) | 10 x 12 | 10.4 x 16 | + | |
| Height (mm) | 2.4 | 4.8 | + | |
| VDS (V) | 40 | 40 | - | |
| VGS (V) | 20 | 20 | - | |
| Configuration | Single | Single | - | |
| VGSth (V) | Min. | 2.4 | 1.1 | + |
| RDS(on) (mΩ) @ 10 VGS | Typ. | 0.34 | 0.82 | + |
| Max. | 0.47 | 0.99 | + | |
| Qg (nC) @ 10 VGS | Typ. | 312 | 182 | - |
| FOM | - | 106 | 149 | + |
| ID (A) | Max. | 795 | 200 | + |
| RthJC (C/W) | Max. | 0.21 | 0.4 | + |
Samples and production quantities of the SiJK140E are available now, with lead times of 36 weeks.
Vishay manufactures one of the world’s largest portfolios of discrete semiconductors and passive electronic components that are essential to innovative designs in the automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical markets. Serving customers worldwide, Vishay is The DNA of tech.® Vishay Intertechnology, Inc. is a Fortune 1,000 Company listed on the NYSE (VSH). More on Vishay at www.Vishay.com.
The DNA of tech® is a registered trademark of Vishay Intertechnology, Inc. TrenchFET and PowerPAK are registered trademarks of Siliconix incorporated.
Vishay on Facebook: http://www.facebook.com/VishayIntertechnology
Vishay Twitter feed: http://twitter.com/vishayindust
Link to product datasheet:
http://www.vishay.com/ppg?62451 (SiJK140E)
Link to product photo:
https://www.flickr.com/photos/vishay/albums/72177720322038317
For more information please contact:
Vishay Intertechnology
Peter Henrici, +1 408 567-8400
peter.henrici@vishay.com
or
Redpines
Bob Decker, +1 415 409-0233
bob.decker@redpinesgroup.com
FAQ
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