Vishay Intertechnology 150 V MOSFET Increases Efficiency With the Industry’s Lowest RDS(ON) of 5.6 mΩ and RDS(ON)*Qg FOM of 336 mΩ*nC
Vishay Intertechnology has introduced a new 150 V TrenchFET® Gen V n-channel power MOSFET (SiRS5700DP) in the PowerPAK® SO-8S package. The device features industry-leading specifications including 5.6 mΩ on-resistance at 10 V and 336 mΩ*nC FOM, representing a 68.3% reduction in overall on-resistance and 15.4% improvement in FOM compared to previous generations. With a low RthJC of 0.45 °C/W, it enables continuous drain current up to 144 A, targeting applications in servers, telecom power supplies, solar inverters, and battery management systems.
Vishay Intertechnology ha introdotto un nuovo MOSFET di potenza n-channel TrenchFET® Gen V da 150 V (SiRS5700DP) nel pacchetto PowerPAK® SO-8S. Il dispositivo presenta specifiche leader di settore, tra cui 5.6 mΩ di resistenza on a 10 V e 336 mΩ*nC FOM, che rappresentano una riduzione del 68.3% della resistenza on totale e un miglioramento del 15.4% nel FOM rispetto alle generazioni precedenti. Con un basso RthJC di 0.45 °C/W, consente una corrente di drain continua fino a 144 A, mirando ad applicazioni in server, alimentatori telecom, inverter solari e sistemi di gestione delle batterie.
Vishay Intertechnology ha presentado un nuevo MOSFET de potencia n-channel TrenchFET® Gen V de 150 V (SiRS5700DP) en el paquete PowerPAK® SO-8S. El dispositivo cuenta con especificaciones líderes en la industria, incluyendo 5.6 mΩ de resistencia on a 10 V y 336 mΩ*nC FOM, lo que representa una reducción del 68.3% en la resistencia on total y una mejora del 15.4% en el FOM en comparación con generaciones anteriores. Con un RthJC bajo de 0.45 °C/W, permite una corriente de drenaje continua de hasta 144 A, dirigido a aplicaciones en servidores, fuentes de alimentación de telecomunicaciones, inversores solares y sistemas de gestión de baterías.
Vishay Intertechnology는 150 V TrenchFET® Gen V n-channel 파워 MOSFET (SiRS5700DP)을 PowerPAK® SO-8S 패키지에 새롭게 출시했습니다. 이 장치는 업계 최고의 사양을 자랑하며, 10 V에서 5.6 mΩ의 온 저항과 336 mΩ*nC FOM을 포함하여, 이전 세대에 비해 전체 온 저항이 68.3% 감소하고 FOM이 15.4% 향상되었습니다. 낮은 RthJC 값인 0.45 °C/W로 최대 144 A의 연속 드레인 전류를 가능하게 하여, 서버, 통신 전원 공급 장치, 태양광 인버터 및 배터리 관리 시스템을 위한 응용 프로그램을 겨냥하고 있습니다.
Vishay Intertechnology a présenté un nouveau MOSFET de puissance n-channel TrenchFET® Gen V de 150 V (SiRS5700DP) dans le boîtier PowerPAK® SO-8S. L'appareil se distingue par des spécifications de pointe, y compris 5.6 mΩ de résistance on à 10 V et 336 mΩ*nC FOM, représentant une réduction de 68.3% de la résistance on totale et une amélioration de 15.4% du FOM par rapport aux générations précédentes. Avec une faible RthJC de 0.45 °C/W, il permet un courant de drain continu allant jusqu'à 144 A, ciblant des applications dans des serveurs, des alimentations télécom, des onduleurs solaires et des systèmes de gestion de batteries.
Vishay Intertechnology hat einen neuen 150 V TrenchFET® Gen V n-channel Leistungsmosfet (SiRS5700DP) im PowerPAK® SO-8S Gehäuse vorgestellt. Das Gerät weist branchenführende Spezifikationen auf, darunter 5.6 mΩ Durchlasswiderstand bei 10 V und 336 mΩ*nC FOM, was eine Reduzierung des gesamten Durchlasswiderstands um 68.3% und eine Verbesserung des FOM um 15.4% im Vergleich zu vorherigen Generationen darstellt. Mit einem niedrigen RthJC von 0.45 °C/W ermöglicht es einen kontinuierlichen Drainstrom von bis zu 144 A, was auf Anwendungen in Servern, Telekommunikationsnetzteilen, Solarwechselrichtern und Batteriemanagementsystemen abzielt.
- Industry-leading lowest on-resistance of 5.6 mΩ, reducing power losses
- 68.3% reduction in overall on-resistance compared to previous generation
- 15.4% improvement in on-resistance times gate charge FOM
- 179% higher continuous drain current capability (up to 144 A)
- Enhanced thermal performance with 62.5% lower RthJC
- None.
Insights
The introduction of the SiRS5700DP MOSFET represents a significant technological advancement in power electronics. The 68.3% reduction in on-resistance and industry-leading 5.6 mΩ RDS(ON) will substantially improve power efficiency in high-performance computing and AI server applications. The device's enhanced thermal performance with 0.45 °C/W RthJC enables higher power density, important for next-generation
The improved specifications directly address the growing demand for more efficient power management in data centers and telecom infrastructure. This product positions Vishay competitively in the high-growth AI infrastructure market, where power efficiency is becoming increasingly critical. The compatibility with existing PowerPAK SO-8 footprints ensures easy adoption by current customers.
Offered in PowerPAK® SO-8S Package, TrenchFET® Device’s Low RthJC of 0.45 °C/W Enables High ID to 144 A to Increase Power Density
MALVERN, Pa., Nov. 20, 2024 (GLOBE NEWSWIRE) -- To provide higher efficiency and power density for telecom, industrial, and computing applications, Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new 150 V TrenchFET® Gen V n-channel power MOSFET in the PowerPAK® SO-8S (QFN 6x5) package. Compared to previous-generation devices in the PowerPAK SO-8, the Vishay Siliconix SiRS5700DP slashes overall on-resistance by
With the industry’s lowest on-resistance of 5.6 mΩ at 10 V and on-resistance times gate charge FOM of 336 mΩ*nC, the device released today minimizes power losses from conduction. This allows designers to boost efficiency to meet next-generation power supply requirements, such as 6 kW AI server power systems. In addition, the extremely low 0.45 °C/W RthJC of the PowerPAK SO-8S package enables continuous drain current up to 144 A to increase power density while providing robust SOA capability.
The SiRS5700DP is ideal for synchronous rectification, DC/DC converters, hot swap switching, and OR-ing functionality. Typical applications will include servers, edge computing, super computers, and data storage; telecom power supplies; solar inverters; motor drives and power tools; and battery management systems. RoHS-compliant and halogen-free, the MOSFET is 100 % Rg and UIS tested and complies with IPC-9701 criteria for more reliable temperature cycling. The device’s standard 6 mm by 5 mm footprint is fully compatible with the PowerPAK SO-8 package.
Samples and production quantities of the SiRS5700DP are available now. For lead time information, please contact your local sales office.
Vishay manufactures one of the world’s largest portfolios of discrete semiconductors and passive electronic components that are essential to innovative designs in the automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical markets. Serving customers worldwide, Vishay is The DNA of tech.® Vishay Intertechnology, Inc. is a Fortune 1000 Company listed on the NYSE (VSH). More on Vishay at www.Vishay.com.
The DNA of tech® is a registered trademark of Vishay Intertechnology. TrenchFET and PowerPAK are registered trademarks of Siliconix incorporated.
Vishay on Facebook: http://www.facebook.com/VishayIntertechnology
Vishay Twitter feed: http://twitter.com/vishayindust
Links to product datasheet:
http://www.vishay.com/ppg?62299 (SiRS5700DP)
Link to product photo:
https://www.flickr.com/photos/vishay/albums/72177720322008776
For more information please contact:
Vishay Intertechnology
Peter Henrici, +1 408 567-8400
peter.henrici@vishay.com
or
Redpines
Bob Decker, +1 415 409-0233
bob.decker@redpinesgroup.com
FAQ
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