Vishay Intertechnology 150 V MOSFET Increases Efficiency With the Industry’s Lowest RDS(ON) of 5.6 mΩ and RDS(ON)*Qg FOM of 336 mΩ*nC

Rhea-AI Summary

Vishay Intertechnology has introduced a new 150 V TrenchFET® Gen V n-channel power MOSFET (SiRS5700DP) in the PowerPAK® SO-8S package. The device features industry-leading specifications including 5.6 mΩ on-resistance at 10 V and 336 mΩ*nC FOM, representing a 68.3% reduction in overall on-resistance and 15.4% improvement in FOM compared to previous generations. With a low RthJC of 0.45 °C/W, it enables continuous drain current up to 144 A, targeting applications in servers, telecom power supplies, solar inverters, and battery management systems.

Positive

• Industry-leading lowest on-resistance of 5.6 mΩ, reducing power losses
• 68.3% reduction in overall on-resistance compared to previous generation
• 15.4% improvement in on-resistance times gate charge FOM
• 179% higher continuous drain current capability (up to 144 A)
• Enhanced thermal performance with 62.5% lower RthJC

Negative

• None.

Offered in PowerPAK® SO-8S Package, TrenchFET® Device’s Low RthJC of 0.45 °C/W Enables High ID to 144 A to Increase Power Density

MALVERN, Pa., Nov. 20, 2024 (GLOBE NEWSWIRE) -- To provide higher efficiency and power density for telecom, industrial, and computing applications, Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new 150 V TrenchFET^® Gen V n-channel power MOSFET in the PowerPAK^® SO-8S (QFN 6x5) package. Compared to previous-generation devices in the PowerPAK SO-8, the Vishay Siliconix SiRS5700DP slashes overall on-resistance by 68.3% and on-resistance times gate charge — a key figure of merit (FOM) for MOSFETs used in power conversion applications — by 15.4% while providing 62.5% lower R_thJC and 179 % higher continuous drain current.

With the industry’s lowest on-resistance of 5.6 mΩ at 10 V and on-resistance times gate charge FOM of 336 mΩ*nC, the device released today minimizes power losses from conduction. This allows designers to boost efficiency to meet next-generation power supply requirements, such as 6 kW AI server power systems. In addition, the extremely low 0.45 °C/W R_thJC of the PowerPAK SO-8S package enables continuous drain current up to 144 A to increase power density while providing robust SOA capability.

The SiRS5700DP is ideal for synchronous rectification, DC/DC converters, hot swap switching, and OR-ing functionality. Typical applications will include servers, edge computing, super computers, and data storage; telecom power supplies; solar inverters; motor drives and power tools; and battery management systems. RoHS-compliant and halogen-free, the MOSFET is 100 % Rg and UIS tested and complies with IPC-9701 criteria for more reliable temperature cycling. The device’s standard 6 mm by 5 mm footprint is fully compatible with the PowerPAK SO-8 package.

Samples and production quantities of the SiRS5700DP are available now. For lead time information, please contact your local sales office.

Vishay manufactures one of the world’s largest portfolios of discrete semiconductors and passive electronic components that are essential to innovative designs in the automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical markets. Serving customers worldwide, Vishay is The DNA of tech.^® Vishay Intertechnology, Inc. is a Fortune 1000 Company listed on the NYSE (VSH). More on Vishay at www.Vishay.com.

The DNA of tech^® is a registered trademark of Vishay Intertechnology. TrenchFET and PowerPAK are registered trademarks of Siliconix incorporated.

Vishay on Facebook: http://www.facebook.com/VishayIntertechnology
Vishay Twitter feed: http://twitter.com/vishayindust

Links to product datasheet:
http://www.vishay.com/ppg?62299 (SiRS5700DP)

Link to product photo:
https://www.flickr.com/photos/vishay/albums/72177720322008776

For more information please contact:
Vishay Intertechnology
Peter Henrici, +1 408 567-8400
peter.henrici@vishay.com
or
Redpines
Bob Decker, +1 415 409-0233
bob.decker@redpinesgroup.com

FAQ

What are the key specifications of Vishay's new 150V MOSFET (VSH)?

The new SiRS5700DP MOSFET features 5.6 mΩ on-resistance at 10V, 336 mΩ*nC FOM, 0.45 °C/W RthJC, and up to 144A continuous drain current capability.

What improvements does Vishay's new MOSFET (VSH) offer over previous generations?

The new MOSFET offers 68.3% lower on-resistance, 15.4% better FOM, 62.5% lower RthJC, and 179% higher continuous drain current compared to previous-generation devices.

What applications is Vishay's SiRS5700DP MOSFET (VSH) designed for?

The MOSFET is designed for servers, edge computing, telecom power supplies, solar inverters, motor drives, power tools, and battery management systems.