An email has been sent to your address with instructions for changing your password.
There is no user registered with this email.
Sign Up
To create a free account, please fill out the form below.
Thank you for signing up!
A confirmation email has been sent to your email address. Please check your email and follow the instructions in the message to complete the registration process. If you do not receive the email, please check your spam folder or contact us for assistance.
Welcome to our platform!
Oops!
Something went wrong while trying to create your new account. Please try again and if the problem persist, Email Us to receive support.
Transphorm Designed into Worldwide Top 3 Laptop Maker for 65W USB-C PD GaN Power Adapter
Rhea-AI Impact
(Moderate)
Rhea-AI Sentiment
(Neutral)
Tags
Rhea-AI Summary
Transphorm, Inc. (Nasdaq: TGAN) announced that its SuperGaN® technology is utilized in Hewlett Packard's 65W USB-C PD/PPS power adapter. This design-win highlights Transphorm's position in the low to mid-power adapter market, covering power levels from 25 to 350 watts. The TP65H300G4LSG 650V GaN FET demonstrates high reliability with less than 0.05 FIT rate over 100 billion hours of data. Transphorm's smaller die offers superior performance compared to larger alternatives. This collaboration with a tier 1 customer like HP showcases the increasing adoption of GaN technology in various markets.
Positive
Design-win with HP enhances TGAN's market position.
Transphorm's SuperGaN technology shows superiority in efficiency and lower on-resistance.
Established 100 billion hours of field reliability data indicates strong product reliability.
Negative
None.
Product Teardown Reveals Transphorm SuperGaN® FET Technology Used in HP 65W USB-C PD/PPS Dual Output Power Adapter
GOLETA, Calif.--(BUSINESS WIRE)--
Transphorm, Inc. (Nasdaq: TGAN)—a pioneer in and global supplier of high reliability, high performance gallium nitride (GaN) power conversion products—today announced that its GaN technology was used in a Hewlett Packard USB-C PD/PPS power adapter. This design-win solidifies Transphorm’s GaN FET technology in the low and mid-power adapter space from 25 watts to 350 watts.
SuperGaN® Technology Difference
The HP power adapter uses Transphorm’s SuperGaN Gen IV TP65H300G4LSG 650V GaN FET. The technology offers the ease of designability and high reliability with high performance that have become synonymous with Transphorm GaN devices.
Further, Transphorm recently completed over 100 billion hours of field reliability data, with a failure-in-time (FIT) rate of < 0.05. These statistics encompass a broad spectrum of power levels including mission critical applications from 25 watts through to 3.6 kilowatts.
Previously, it has been verified that, when compared to a larger die (e.g., 175 mOhm) e-mode GaN device, Transphorm’s smaller die (i.e., 240 mOhm) SuperGaN FET showed lower on resistance rise (23%) at 150°C and higher performance at 50% and 100% (full) power, owing to the inherent performance benefits of the platform.
“This is an important design-win for Transphorm as customers see the benefits of our dedication to quality and reliability with top performance, which is now being embraced by tier 1 customers like HP,” said Tushar Dhayagude, VP, Field Applications & Technical Sales, Transphorm. “Our GaN FETs are agnostic to controllers with integrated and off-the-shelf drivers resulting in the ease of design and drivability which is now becoming more and more important as we continue to gain adoption in different markets, in both low-power and high-power segments.”
Transphorm, Inc., a global leader in the GaN revolution, designs and manufactures high performance and high reliability GaN semiconductors for high voltage power conversion applications. Having one of the largest Power GaN IP portfolios of more than 1,000 owned or licensed patents, Transphorm produces the industry’s first JEDEC and AEC-Q101 qualified high voltage GaN semiconductor devices. The Company’s vertically integrated device business model allows for innovation at every development stage: design, fabrication, device, and application support. Transphorm’s innovations are moving power electronics beyond the limitations of silicon to achieve over 99% efficiency, 40% more power density and 20% lower system cost. Transphorm is headquartered in Goleta, California and has manufacturing operations in Goleta and Aizu, Japan. For more information, please visit www.transphormusa.com. Follow us on Twitter @transphormusa and WeChat @ Transphorm_GaN.
What does the recent Transphorm press release indicate about their technology?
The press release highlights that Transphorm's SuperGaN technology is used in HP's 65W USB-C power adapter, emphasizing its market presence.
What is the significance of the HP design-win for Transphorm?
The design-win solidifies Transphorm's footprint in the low to mid-power adapter market, demonstrating the adoption of their GaN technology by major players.
How reliable is Transphorm's GaN technology according to their press release?
Transphorm's GaN technology has over 100 billion hours of field reliability data with a failure-in-time rate of less than 0.05.
What performance advantages does Transphorm's smaller die GaN FET offer?
It offers lower on-resistance rise and higher performance at varying power levels compared to larger GaN devices.
What power levels does Transphorm's technology cater to?
Transphorm's GaN technology is applicable for power levels ranging from 25 watts to 350 watts.
