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Transphorm, Inc. (NASDAQ: TGAN) is a pioneering semiconductor company specializing in the development of gallium nitride (GaN) transistors and modules tailored for high-voltage power conversion applications. Leveraging an industry-leading intellectual property portfolio and over 300 years of combined GaN engineering expertise, Transphorm stands at the forefront of innovation in the semiconductor industry.
At its core, Transphorm is dedicated to delivering the highest performance and reliability in GaN devices. Its cutting-edge products aim to revolutionize power conversion, moving beyond the limitations of traditional silicon-based systems to substantially reduce energy losses—up to 90% compared to existing solutions. The company’s vertically integrated business model encompasses every stage of development, from design and fabrication to application support. This comprehensive approach ensures unmatched innovation and quality control.
Transphorm's portfolio includes JEDEC and AEC-Q101-qualified GaN FETs, recognized for their exceptional reliability and performance. The company boasts the industry's only fully-qualified 650V GaN devices, rigorously tested beyond standard JEDEC requirements to ensure long-term reliability. This commitment to quality has positioned Transphorm as a trusted partner for a growing customer base seeking best-in-class, application-driven design support.
Recent achievements highlight Transphorm's role as a market leader in GaN technology. The company continues to expand its product offerings and forge strategic partnerships, further solidifying its position in the semiconductor landscape. With a focus on reducing energy consumption and driving technological advancements, Transphorm is poised to make significant contributions to various industries, from consumer electronics to automotive and industrial sectors.
Renesas Electronics has completed its acquisition of Transphorm, a leader in gallium nitride (GaN) power semiconductors, as of June 20, 2024. This acquisition allows Renesas to immediately offer GaN-based power products and reference designs to meet the rising demand for wide bandgap (WBG) semiconductor products. GaN and silicon carbide (SiC) are key for next-gen power semiconductors, with growing applications in EVs, data centers, AI, renewable energy, and more.
Renesas also launched 15 new reference designs, integrating both companies' technologies, focusing on EVs, industrial power conversion, and other sectors. These include solutions like a 500W onboard battery charger for 2-wheeler EVs and a 3-in-1 EV unit combining inverter, charger, and DC/DC converter.
The acquisition aligns with Renesas' strategy for sustainable long-term growth, complementing other initiatives like opening new facilities for power products and securing SiC wafer supplies.
Transphorm (Nasdaq: TGAN), a leader in GaN power semiconductors, has introduced a 300 W DC-to-DC GaN reference design for electric vehicle battery chargers. The design features TP65H150G4PS 150 mOhm SuperGaN® FETs, showcasing bidirectional power capabilities for e-mobility applications. This allows power to flow both from AC to DC and DC to AC, enhancing energy efficiency. The design supports V2X infrastructure, including V2L, V2H, and V2G, with a market size projected to reach up to $70 billion by 2030. Specifications include a peak efficiency of 97.3% and natural convection cooling. The reference design is suitable for high power density applications, such as DC-to-DC power stages in energy harvesting and vehicle battery chargers.
Transphorm (Nasdaq: TGAN) will showcase its SuperGaN platform at PCIM 2024, emphasizing its superior performance over Silicon Carbide (SiC) in high-power systems. The SuperGaN platform delivers lower losses and higher electron mobility, making it ideal for electric vehicles, datacenters, AI, and industrial applications. Transphorm's GaN products support a wide power range, from 45W adapters to 7.5kW PSUs, and are used in groundbreaking customer products. The company estimates a GaN total addressable market of $8 billion by 2028. Notable innovations include a 5-microsecond short-circuit withstand time, a bidirectional switch, and a 1200V GaN-on-Sapphire device. Transphorm's vertical integration and reliability make it a leader in the GaN power semiconductor industry.
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