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Transphorm, Inc. (NASDAQ: TGAN) is a pioneering semiconductor company specializing in the development of gallium nitride (GaN) transistors and modules tailored for high-voltage power conversion applications. Leveraging an industry-leading intellectual property portfolio and over 300 years of combined GaN engineering expertise, Transphorm stands at the forefront of innovation in the semiconductor industry.
At its core, Transphorm is dedicated to delivering the highest performance and reliability in GaN devices. Its cutting-edge products aim to revolutionize power conversion, moving beyond the limitations of traditional silicon-based systems to substantially reduce energy losses—up to 90% compared to existing solutions. The company’s vertically integrated business model encompasses every stage of development, from design and fabrication to application support. This comprehensive approach ensures unmatched innovation and quality control.
Transphorm's portfolio includes JEDEC and AEC-Q101-qualified GaN FETs, recognized for their exceptional reliability and performance. The company boasts the industry's only fully-qualified 650V GaN devices, rigorously tested beyond standard JEDEC requirements to ensure long-term reliability. This commitment to quality has positioned Transphorm as a trusted partner for a growing customer base seeking best-in-class, application-driven design support.
Recent achievements highlight Transphorm's role as a market leader in GaN technology. The company continues to expand its product offerings and forge strategic partnerships, further solidifying its position in the semiconductor landscape. With a focus on reducing energy consumption and driving technological advancements, Transphorm is poised to make significant contributions to various industries, from consumer electronics to automotive and industrial sectors.
Transphorm, Inc. (OTCQB: TGAN) has announced its participation in several upcoming virtual investor conferences. These include the Baird Vehicle Technology & Mobility Conference on March 10, 2021, featuring a fireside chat at 11:30 AM ET. They will also be at the B. Riley Securities Sustainable Energy & Technology Conference on the same date, and the Loop Capital Markets Consumer, Industrials and TMT Conference on March 12, 2021. Transphorm is a leader in GaN power conversion products, focusing on high efficiency and reliability.
Transphorm, Inc. (OTCQB: TGAN) has announced that its gallium nitride (GaN) power conversion devices are tailored for the increasing demand in cryptocurrency mining, specifically Bitcoin. The company is the first high voltage GaN supplier to confirm that its products are actively used in crypto mining. As Bitcoin mining consumes over 121.36 terawatt hours of electricity annually, Transphorm aims to provide efficient power solutions to mitigate energy waste. The firm's GaN FETs promise high efficiency and reliability in challenging environments, addressing the significant power needs of mining operations.
Transphorm, a leader in gallium nitride (GaN) power conversion products, will report its Q4 and full-year 2020 financial results on March 9, 2021, after market close. A conference call for investors will follow at 2:00 p.m. PT. Participants can access the call via the company's Investor Relations page. Transphorm's GaN semiconductors boast remarkable efficiency and cost-effectiveness, contributing significantly to innovations in power electronics.
Transphorm (OTCQB: TGAN) announced the appointment of Katharina McFarland to its Board of Directors, effective February 23, 2021. McFarland brings over 30 years of government expertise in acquisition and program management, having served in key roles within the Department of Defense. Her experience is expected to enhance Transphorm’s relationships with government agencies, particularly in the GaN sector. CEO Mario Rivas emphasized her unique insights and the company's commitment to board diversification amidst its strategic growth plan in GaN power conversion.
Keysight Technologies (NYSE: KEYS) and Transphorm, Inc. (OTCQB: TGAN) have launched a new power supply reference design aimed at optimizing power conversion using gallium nitride (GaN) technology. This design allows engineers to identify and rectify errors before hardware production, reducing costs and expediting market entry. The collaboration leverages Keysight’s PathWave Advanced Design System, which offers pre-compliance analysis through virtual prototypes, enhancing design efficacy while minimizing physical prototyping challenges. This innovative design addresses the growing demand for efficient switched-mode power supplies.
Transphorm, Inc. (OTCQB: TGAN) has partnered with Bel Power Solutions, now using Transphorm’s high voltage GaN FETs in six of Bel's Titanium Efficiency Power Supplies. This collaboration marks the rising trend of high-performance, wide bandgap PSUs in data centers. The TET series, featuring models such as TET3000 and TET3200, achieves over 96% efficiency with a Titanium rating. Omdia forecasts a 66.5% CAGR for GaN power transistors in data centers from 2019-2024, indicating rapid market growth. Transphorm's GaN technology promises increased power density, lower costs, and reliability.
Transphorm, Inc. (OTCQB: TGAN) announced participation in the virtual 23rd Annual Needham Growth Conference. Management will present on Thursday, January 14, 2021, at 10:15 a.m. PT, and will be available for investor meetings throughout the day. Interested portfolio managers and analysts can request meetings by contacting conferences@needhamco.com. The presentation will be available via live audio webcast and archived on the Company’s website.
Transphorm, Inc. (OTCQB: TGAN) has successfully closed a private placement of 5 million shares at $3.00 each, generating $15 million in gross proceeds. This funding will bolster financial stability and support scaling production for fast charging adapters and expanding GaN (gallium nitride) product qualifications, particularly for EV applications. The company aims to leverage industry trends like 5G and vehicle electrification. However, the securities sold are unregistered under the Securities Act, pending registration within 30 days.
Transphorm, Inc. (OTCQB: TGAN) has priced a private placement of 5,000,000 shares of common stock at $3.00 per share, aiming for gross proceeds of $15.0 million. The closing is projected around December 22, 2020, pending standard closing conditions. Proceeds will enhance the scaling of GaN products in various markets, including fast charging and EV applications, and support general operations. The shares are unregistered under the Securities Act and require registration for resale within 30 days post-closing. Loop Capital Markets and Spartan Capital acted as placement agents.
Transphorm, Inc. (OTCQB: TGAN) has expanded its cooperation agreement with Yaskawa Electric Corporation, with Yaskawa committing $4 million in investments. The first tranche of $1 million is expected by mid-December 2020. This agreement builds upon a previous partnership starting in 2017, which saw Yaskawa invest $15 million in Transphorm. The collaboration aims to utilize Transphorm's GaN power devices for industrial applications, enhancing Yaskawa's next-generation products in servo motors and variable frequency drives.
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