RTX to develop ultra-wide bandgap semiconductors for DARPA
Raytheon, an RTX business, has been awarded a three-year, two-phase contract from DARPA to develop foundational ultra-wide bandgap semiconductors (UWBGS) based on diamond and aluminum nitride technology. This new class of materials offers improved conductivity and thermal management properties, revolutionizing semiconductor electronics.
The contract's first phase focuses on developing diamond and aluminum nitride semiconductor films and integrating them into electronic devices. The second phase aims to optimize and mature the technology for larger diameter wafers in sensor applications.
UWBGS offer advantages over traditional semiconductors, enabling compact, high-power RF switches, limiters, and power amplifiers. The goal is to develop materials for extended capability and range in radar and communication systems, including cooperative sensing, electronic warfare, directed energy, and circuitry in high-speed weapon systems like hypersonics.
Raytheon, un'azienda di RTX, ha ricevuto un contratto triennale in due fasi da DARPA per sviluppare semiconduttori a banda ultra larga (UWBGS) basati su tecnologia al diamante e nitruro di alluminio. Questa nuova classe di materiali offre miglioramenti nella conducibilità e nella gestione termica, rivoluzionando l'elettronica dei semiconduttori.
La prima fase del contratto si concentra sullo sviluppo di film semiconduttori di diamante e nitruro di alluminio e sulla loro integrazione in dispositivi elettronici. La seconda fase mira a ottimizzare e far maturare la tecnologia per wafer di diametro maggiore nelle applicazioni di sensori.
Gli UWBGS offrono vantaggi rispetto ai semiconduttori tradizionali, consentendo interruttori RF compatti ad alta potenza, limitatori e amplificatori di potenza. L'obiettivo è sviluppare materiali per capacità e raggio estesi nei sistemi radar e di comunicazione, incluso il rilevamento cooperativo, la guerra elettronica, l'energia direzionata e i circuiti in sistemi d'arma ad alta velocità come gli ipersonici.
Raytheon, una empresa de RTX, ha sido galardonada con un contrato de tres años en dos fases de DARPA para desarrollar semiconductores de banda ultra ancha (UWBGS) basados en tecnología de diamante y nitruro de aluminio. Esta nueva clase de materiales ofrece mejor conductividad y propiedades de gestión térmica, revolucionando la electrónica de semiconductores.
La primera fase del contrato se centra en el desarrollo de películas semiconductoras de diamante y nitruro de aluminio, integrándolas en dispositivos electrónicos. La segunda fase tiene como objetivo optimizar y madurar la tecnología para obleas de mayor diámetro en aplicaciones de sensores.
Los UWBGS ofrecen ventajas sobre los semiconductores tradicionales, permitiendo interruptores RF compactos de alta potencia, limitadores y amplificadores de potencia. El objetivo es desarrollar materiales para capacidad y alcance extendido en sistemas de radar y comunicación, incluido el detección cooperativa, la guerra electrónica, energía dirigida y circuitos en sistemas de armas hipersónicos de alta velocidad.
레이시온, RTX 비즈니스의 일환으로, DARPA로부터 3년간 2단계 계약을 수주하여 다이아몬드와 질화알루미늄 기술을 기반으로 하는 초광대역 갭 반도체(UWBGS)를 개발하게 되었습니다. 이 새로운 소재 클래스를 통해 전도성과 열 관리 특성이 개선되어 반도체 전자 제품에 혁신을 가져옵니다.
계약의 1단계는 다이아몬드 및 질화알루미늄 반도체 필름을 개발하고 이를 전자 기기에 통합하는 데 중점을 둡니다. 2단계는 센서 응용을 위한 더 큰 직경의 웨이퍼에 대한 기술 최적화와 성숙을 목표로 합니다.
UWBGS는 전통적인 반도체보다 이점을 제공하여 소형 고출력 RF 스위치, 리미터 및 파워 앰프를 가능하게 합니다. 목표는 레이더 및 통신 시스템에서의 확장된 기능과 범위를 위해 소재를 개발하는 것이며, 이를 통해 협력 감지, 전자전, 유도 에너지 및 고속 무기 시스템에서의 회로를 포함합니다.
Raytheon, une entreprise de RTX, a reçu un contrat de trois ans en deux phases de DARPA pour développer des semiconducteurs à large bande ultrafragile (UWBGS) basés sur la technologie du diamant et du nitrure d'aluminium. Cette nouvelle classe de matériaux offre des propriétés améliorées de conductivité et de gestion thermique, révolutionnant l'électronique des semiconducteurs.
La première phase du contrat se concentre sur le développement de films semiconducteurs en diamant et en nitrure d'aluminium et leur intégration dans des dispositifs électroniques. La deuxième phase vise à optimiser et à mûrir la technologie pour des wafers de plus grand diamètre dans les applications de capteurs.
Les UWBGS offrent des avantages par rapport aux semiconducteurs traditionnels, permettant la création d'interrupteurs RF compacts et puissants, de limiteurs et d'amplificateurs de puissance. L'objectif est de développer des matériaux pour une capacité et une portée étendues dans les systèmes radar et de communication, y compris la détection coopérative, la guerre électronique, l'énergie dirigée et les circuits dans des systèmes d'armement à haute vitesse comme les hypersoniques.
Raytheon, ein Unternehmen von RTX, hat einen drei Jahre, zweistufigen Auftrag von DARPA zur Entwicklung von grundlegenden ultrabreitbandigen Halbleitern (UWBGS) auf Basis von Diamant- und Aluminiumnitrid-Technologie erhalten. Diese neue Materialklasse bietet verbesserte Leitfähigkeit und thermische Eigenschaften, die die Halbleiterelektronik revolutionieren.
Die erste Phase des Auftrags konzentriert sich auf die Entwicklung von Diamant- und Aluminiumnitrid-Halbleiterfilmen und deren Integration in elektronische Geräte. Die zweite Phase zielt darauf ab, die Technologie für größere Waferdurchmesser in Sensoranwendungen zu optimieren und weiterzuentwickeln.
UWBGS bieten Vorteile gegenüber traditionellen Halbleitern, indem sie kompakte Hochleistungs-RF-Schalter, -Begrenzer und -Leistungsverstärker ermöglichen. Das Ziel ist die Entwicklung von Materialien für erweiterte Leistung und Reichweite in Radar- und Kommunikationssystemen, einschließlich kooperativer Sensorik, elektronischer Kriegsführung, gerichteter Energie und Schaltungen in Hochgeschwindigkeitswaffensystemen wie Hyperschallwaffen.
- Awarded a three-year contract from DARPA for advanced semiconductor development
- Potential for revolutionary advancements in semiconductor technology
- UWBGS offer improved conductivity and thermal management properties
- Possible applications in radar, communication systems, and high-speed weapon systems
- None.
Insights
The development of ultra-wide bandgap semiconductors (UWBGS) based on diamond and aluminum nitride technology represents a significant advancement in semiconductor electronics. These materials offer improved conductivity and thermal management properties, which could lead to substantial improvements in power delivery and heat dissipation in electronic devices.
The potential applications for UWBGS are vast, particularly in defense and aerospace sectors. The ability to create highly compact, ultra-high power RF switches, limiters and power amplifiers could revolutionize radar and communication systems, extending their capabilities and range. This technology could be especially important for electronic warfare, directed energy systems and hypersonic weapons.
For RTX, this DARPA contract positions the company at the forefront of next-generation semiconductor technology. Success in this field could lead to long-term competitive advantages and potentially lucrative defense contracts. However, investors should note that the development process is likely to be lengthy and capital-intensive, with uncertain commercial outcomes in the near term.
This DARPA contract represents a strategic investment in RTX's future technological capabilities. While the immediate financial impact may be , the long-term potential is significant. The development of UWBGS could open up new market opportunities and strengthen RTX's position in the defense and aerospace sectors.
Investors should consider this as part of RTX's R&D strategy to maintain its competitive edge in advanced technologies. The contract's two-phase structure mitigates some risk, allowing for evaluation and adjustment before scaling up. However, the return on investment timeline for such cutting-edge research can be lengthy and uncertain.
This project aligns with the industry trend towards more advanced, efficient and powerful electronic systems. If successful, it could lead to increased market share and higher-margin products for RTX in the future, potentially driving long-term revenue growth and profitability.
New class of materials offer improved conductivity and thermal management properties
During phase one of the contract, the Raytheon Advanced Technology team will develop diamond and aluminum nitride semiconductor films and their integration onto electronic devices. Phase two will focus on optimizing and maturing the diamond and aluminum nitride technology onto larger diameter wafers for sensor applications.
"This is a significant step forward that will once again revolutionize semiconductor technology," said Colin Whelan, president of Advanced Technology at Raytheon. "Raytheon has extensive proven experience developing similar materials such as Gallium Arsenide and Gallium Nitride for Department of Defense systems. By combining that pioneering history and our expertise in advanced microelectronics, we'll work to mature these materials towards future applications."
The unique material properties of UWBGS offer several advantages over traditional semiconductor technologies, enabling highly compact, ultra-high power radio frequency switches, limiters, and power amplifiers. Their high thermal conductivity also allows the ability to operate at higher temperatures and in more extreme environments.
The team's goal is to spearhead the development of these materials towards devices that are well suited for both existing and future radar and communication systems with extended capability and range, including cooperative sensing, electronic warfare, directed energy, and circuitry in high-speed weapon systems such as hypersonics.
Work on this contract is being conducted at the company's foundry in
About Raytheon
Raytheon, an RTX business, is a leading provider of defense solutions to help the
About RTX
With more than 185,000 global employees, RTX pushes the limits of technology and science to redefine how we connect and protect our world. Through industry-leading businesses – Collins Aerospace, Pratt & Whitney, and Raytheon – we are advancing aviation, engineering integrated defense systems, and developing next-generation technology solutions and manufacturing to help global customers address their most critical challenges. The company, with 2023 sales of
For questions or to schedule an interview, please contact corporatepr@rtx.com
View original content:https://www.prnewswire.com/news-releases/rtx-to-develop-ultra-wide-bandgap-semiconductors-for-darpa-302263228.html
SOURCE RTX
FAQ
What is the purpose of RTX's contract with DARPA for UWBGS development?
How long is the UWBGS development contract between RTX and DARPA?
What are the potential applications for the UWBGS technology being developed by RTX?
Where is RTX conducting the work for the DARPA UWBGS contract?
