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Navitas Semiconductor Corp (NVTS) drives innovation in next-generation power electronics through its GaN and SiC semiconductor solutions. This news hub provides investors and industry professionals with essential updates on technological breakthroughs, strategic partnerships, and market developments.
Access curated press releases and analysis covering earnings reports, product launches, and sustainability initiatives. Stay informed about NVTS' leadership in energy-efficient power conversion technologies serving mobile, EV, and data center markets.
Discover updates on patent milestones, manufacturing expansions, and industry collaborations that demonstrate Navitas' technical expertise in high-frequency power ICs. Our collection ensures you never miss critical developments impacting this semiconductor innovator.
Bookmark this page for streamlined access to verified NVTS updates. Check regularly for new insights into GaNFast technology advancements and their global impact on power electronics efficiency.
Navitas Semiconductor (Nasdaq: NVTS) announced the launch of a new Design Center in Hangzhou, China, aimed at enhancing GaN power integrated circuits for data centers. This facility will facilitate the transition from silicon to GaN, promising energy savings of up to 40% and $1.9B/year in reduced electricity costs. The center's team will support power supply design from concept to mass production, emphasizing high efficiency and cost-reduction, in compliance with stringent efficiency standards effective from January 1, 2023.
Navitas Semiconductor (Nasdaq: NVTS) has successfully completed a prepaid forward-purchase transaction, releasing $30 million in unrestricted cash and 3,000,000 shares from its balance sheet. This agreement, initiated on October 6, 2021, involved Atalaya Capital Management, which sold these shares in open-market transactions, allowing the cash to be utilized without restrictions. This completion enhances Navitas' financial flexibility, supporting its leadership in the gallium nitride (GaN) power IC market.
Navitas Semiconductor has revealed that its gallium nitride (GaN) semiconductors enable ultra-fast charging for Xiaomi's Note 11 Pro+ smartphone. Powered by GaNFast™ ICs with GaNSense™ technology, the new charger can fully charge a 4,500 mAhr battery in just 17 minutes at a capacity of 120W. Notably, GaN devices operate 20 times faster than traditional silicon, offering significant energy efficiency. This collaboration is projected to double Navitas' revenue opportunity as the ultra-fast charger market grows. The technology was showcased at the recent China Power Supply Society's conference.
Navitas Semiconductor (Nasdaq: NVTS) has been named a CES® 2022 Innovation Awards Honoree for its GaNFast™ ICs with GaNSense™ technology. This announcement precedes CES 2022, scheduled for January 5-8 in Las Vegas, where Navitas will showcase its high-performance mobile chargers from leading brands. The CES Innovation Awards program recognized over 1,800 submissions based on innovation, engineering, and design. GaNFast ICs provide faster charging and power efficiency, addressing diverse applications including consumer electronics and electric vehicles.
Navitas Semiconductor and Anker Innovations have announced a strategic partnership to develop next-generation mobile fast chargers utilizing GaN power integrated circuits (ICs). This collaboration aims to enhance product development efficiency by colocating engineering teams from both companies. GaN technology is poised to revolutionize the mobile charging market, estimated at $2B. Initial products include 30W and 65W chargers designed for high-performance devices like gaming laptops, marking a significant step forward in the adoption of GaN technology.
Navitas Semiconductor (Nasdaq: NVTS) announced CEO Gene Sheridan's participation in the J.P. Morgan Global Technology, Media and Telecom Conference in Asia, focusing on next-gen GaN power integrated circuits (ICs). Scheduled for November 16, the panel titled 'Beyond Silicon' will discuss the shift from silicon to gallium nitride technology, vital for improving efficiency in various applications, including electric vehicles. Navitas, a leader in GaN technology, trades with an enterprise value exceeding $1B and has raised over $320M since its Nasdaq debut on October 20, 2021.
Navitas Semiconductor (Nasdaq: NVTS) reported a 61% increase in Q3 2021 revenues to $5.6 million, with year-to-date revenues growing 128% compared to 2020. Despite a GAAP net loss of $9.5 million ($0.57/share), the company anticipates Q4 revenues of $7.4 million, marking a projected 60% growth year-over-year. The newly launched GaNSense technology promises significant market potential, with strategic partnerships and product launches ongoing in the fast-charging sector. The company completed a business combination with $260 million in cash to fuel growth.
Navitas Semiconductor (NASDAQ: NVTS) announced participation in the Craig-Hallum Alpha Select Conference on November 16, 2021. The conference highlights innovative companies with strong business models and growth prospects. Navitas is a leader in gallium nitride (GaN) power integrated circuits, aiming to replace legacy silicon chips in a $13.1 billion market. GaN technology offers significant advantages, including faster performance and reduced carbon emissions. The company touts over 130 patents and the ability to achieve up to 3x faster charging.
Navitas Semiconductor (Nasdaq: NVTS) announced the launch of its third-generation GaN power ICs featuring GaNSense technology. This innovation enhances real-time sensing and protection, improving reliability and efficiency. The new product line includes 10 different ICs, optimized for fast-charging applications with significant energy savings of up to 10% compared to earlier models. Navitas has shipped over 30 million GaNFast power ICs, achieving excessive field operation without failures. The new ICs will be showcased at key industry events and are now in mass production.
Navitas Semiconductor (Nasdaq: NVTS) will participate in Baird's 2021 Global Industrial Conference from November 9-11. Senior executives will discuss the potential of their gallium nitride (GaN) power integrated circuits in various markets, including electric vehicles and renewable energy. The mobile fast charger market is valued at $2B, with the EV segment alone at approximately $2.5B per year. Each GaN IC can reduce CO2 emissions by 4 kg compared to legacy silicon chips, contributing to an estimated 2.6 Gton/yr CO2 saving by 2050.
