Navitas Highlights Electrification Opportunities for Next-Gen Semiconductors at Baird Global Industrial Conference

Rhea-AI Summary

Navitas Semiconductor (Nasdaq: NVTS) will participate in Baird's 2021 Global Industrial Conference from November 9-11. Senior executives will discuss the potential of their gallium nitride (GaN) power integrated circuits in various markets, including electric vehicles and renewable energy. The mobile fast charger market is valued at $2B, with the EV segment alone at approximately $2.5B per year. Each GaN IC can reduce CO₂ emissions by 4 kg compared to legacy silicon chips, contributing to an estimated 2.6 Gton/yr CO₂ saving by 2050.

Positive

• Participation in the Baird Conference allows Navitas to showcase their GaN technology to investors.
• GaN technology is positioned for growth in mobile fast chargers, electric vehicles (EVs), and renewable energy markets.
• Significant market potential, with GaN content estimated at $250 per vehicle in the EV market.

Negative

• None.

EL SEGUNDO, Calif., Nov. 4, 2021 /PRNewswire/ -- Navitas Semiconductor (Nasdaq:NVTS), the industry-leader in gallium nitride (GaN) power integrated circuits ("ICs") has announced that it will take part in Baird's 2021 Global Industrial Conference on November 11^th.

GaN is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon and enables up to 3x more power and 3x faster charging in half the size and weight. Navitas' GaNFast™ power ICs integrate GaN power and drive plus protection and control to deliver simple, small, fast and efficient performance. With over 130 patents issued or pending, and significant trade secrets including a proprietary process design kit (PDK), Navitas believes it has a multi-year lead in next-generation GaN power ICs.

Gallium nitride (GaN) positioned to expand from mobile fast chargers to EV, solar, and data center markets

Combining presentations with breakout sessions and one-on-one meetings, the 51^st annual Baird Industrial Conference provides investors with an opportunity to connect with senior executives from over 275 leading public and private corporations. This year the conference will be a virtual event held 9^th-11^th November. To register, click here.

At the conference, Navitas' senior executives will highlight how next-generation GaN power ICs - rather than legacy silicon chips - will play a key role in addressing efficiency demands in markets ranging from electric vehicles to data centers and renewable energy.

"The Baird conference is a great opportunity to highlight the initial $2B mobile fast charger market for GaN and the multi-$B higher-power expansion markets," said Navitas CEO and co-founder Gene Sheridan. "The EV market is one example – at ~$2,5B/yr and over $250 GaN content per vehicle, there is a significant financial reward to match the growing environmental benefits. Each GaN power IC reduces CO₂ emissions by 4 kg compared to a legacy silicon chip, achieving an estimated 2.6 Gton/yr CO₂ saving by 2050 as we work to "Electrify Our World™".

About Baird
Baird is an employee-owned, international wealth management, asset management, investment banking/capital markets, and private equity firm with offices in the United States, Europe and Asia. Established in 1919, Baird has approximately 4,600 associates serving the needs of individual, corporate, institutional and municipal clients. Baird has more than $355 billion in client assets as of December 31, 2020. Committed to being a great place to work, Baird ranked No. 32 on the Fortune 100 Best Companies to Work For® list in 2021 – its 18h consecutive year on the list. Baird is the marketing name of Baird Financial Group. Baird's principal operating subsidiaries are Robert W. Baird & Co. Incorporated and Baird Trust Company in the United States and Robert W. Baird Group Ltd. in Europe. Baird also has an operating subsidiary in Asia supporting Baird's investment banking and private equity operations.

About Navitas
Navitas Semiconductor (Nasdaq:NVTS) is the industry leader in GaN power ICs, founded in 2014. GaN power ICs integrate GaN power with drive, control and protection to enable faster charging, higher power density and greater energy savings for mobile, consumer, enterprise, eMobility and new energy markets. Over 130 Navitas patents are issued or pending, and over 30 million GaNFast power ICs have been shipped with zero reported GaN field failures. Navitas rang the Nasdaq opening bell and started trading on Nasdaq on October 20th, 2021, with an enterprise value over $1B and over $320M gross capital raise.

Navitas Semiconductor, GaNFast and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor. All other brands, product names and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.

Contact Information
Stephen Oliver, VP Corporate Marketing & Investor Relations
ir@navitassemi.com

 

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SOURCE Navitas Semiconductor

FAQ

What will Navitas Semiconductor present at the Baird Conference?

Navitas will highlight the advantages of next-generation GaN power ICs over legacy silicon chips and their applications in various markets.

When is the Baird Global Industrial Conference?

The conference runs from November 9-11, 2021.

What is the market size for GaN mobile fast chargers?

The mobile fast charger market is valued at $2 billion.

How much CO₂ can each GaN power IC save?

Each GaN power IC can reduce CO₂ emissions by 4 kg compared to traditional silicon chips.

How much is the electric vehicle market worth to Navitas?

The electric vehicle market represents approximately $2.5 billion annually.