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Navitas Semiconductor Corp (NVTS) drives innovation in next-generation power electronics through its GaN and SiC semiconductor solutions. This news hub provides investors and industry professionals with essential updates on technological breakthroughs, strategic partnerships, and market developments.
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Discover updates on patent milestones, manufacturing expansions, and industry collaborations that demonstrate Navitas' technical expertise in high-frequency power ICs. Our collection ensures you never miss critical developments impacting this semiconductor innovator.
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Navitas Semiconductor (Nasdaq: NVTS) announced CEO Gene Sheridan will speak at the 36th CS MANTECH conference in Monterey, California, from May 9-12, 2022. His presentation, titled ‘GaN’s expected Impact on the Power Electronics Industry to Electrify Our World’, will address the transition from silicon to gallium nitride (GaN) technologies in power electronics. GaNFast™ ICs promise enhanced energy efficiency and reduced CO2 emissions, potentially saving over 10 million tons of CO2 annually in datacenters and accelerating EV adoption by 3 years.
Navitas Semiconductor (Nasdaq: NVTS) has joined PowerAmerica, a consortium focused on advancing gallium nitride (GaN) and silicon carbide (SiC) technologies. This collaboration aims to accelerate the adoption of wide-bandgap (WBG) semiconductors, which offer significant improvements over traditional silicon in terms of speed, power, and energy efficiency. Navitas' innovative GaNFast™ power ICs enable faster charging and energy savings, with a notable track record of zero field failures. The company will also host a seminar at the PowerAmerica 2022 Summer Workshop to showcase these advancements.
Navitas Semiconductor (NASDAQ: NVTS) is leveraging its leadership in gallium nitride (GaN) technologies to expand into data centers, solar, and electric vehicle markets. The company will showcase its GaNFast power integrated circuits at PCIM 2022 in Nuremberg, Germany, from May 10 to 12. Navitas has achieved over 40 million shipments with zero reported failures and offers a benchmark 20-year warranty. CEO Gene Sheridan emphasized the strategic importance of Europe and highlighted partnerships with companies like Samsung and Xiaomi in the transition to higher-power applications.
Navitas Semiconductor (Nasdaq: NVTS) has unveiled a groundbreaking 20-year limited warranty for its GaNFast technology, significantly exceeding the lifespan of typical silicon and other power semiconductors. This advancement aims to accelerate the adoption of GaN technology across data center, solar, and EV markets. With over 40 million units shipped and zero reported GaN-related failures, this warranty reflects Navitas' commitment to reliability and sustainability, potentially saving up to 2.6 Gtons CO2 annually by 2050 through faster GaN adoption.
Navitas Semiconductor (Nasdaq: NVTS) has achieved a significant milestone by shipping over 40 million GaN power ICs with zero reported field failures. This accomplishment highlights the company's strong presence in the mobile fast charger market, servicing major clients like Samsung and Dell. Moving forward, Navitas anticipates revenue from higher-power markets, including data centers and solar, commencing in 2022. The company projects significant growth in GaN IC opportunities, estimating the global power semiconductor market could reach $13.1 billion by 2026.
Navitas Semiconductor (Nasdaq: NVTS) announced its GaNFast technology has been selected for Samsung's Galaxy S22 Ultra and S22+ smartphones, featuring the world's most power-dense charger at 45W. This new charger achieves energy efficiency with a power density exceeding 1 W/cc, allowing for faster charging and reduced device size. GaN technology operates 20 times quicker than traditional silicon, with significant energy savings and lower CO2 emissions per unit shipped. Over 35 million GaNFast ICs have shipped with zero reported field failures.
Navitas Semiconductor (Nasdaq: NVTS) has announced that its next-generation GaNFast power ICs, featuring GaNSense technology, will power the special-edition K50 Champion Edition gaming smartphone from Redmi, launched in China. This phone, co-branded with Mercedes-AMG Petronas F1, boasts ultra-fast charging capabilities, achieving a full charge in just 17 minutes, and 0-100% in 37 minutes during intense gaming use. The device features a 6.67-inch OLED display, Qualcomm Snapdragon 8 processor, and advanced cooling systems, enhancing overall gaming performance.
Navitas Semiconductor (NASDAQ: NVTS) announced a virtual non-deal roadshow with Baird on March 3, 2022, focusing on their advanced gallium nitride (GaN) power integrated circuits (ICs). These GaNFast™ ICs provide up to 3x faster charging and 40% energy savings compared to silicon alternatives. The company has identified a $13.1 billion electrification opportunity across various sectors, including mobile fast chargers and EVs. CEO Gene Sheridan noted significant growth in charger revenue, which is doubling annually, while expanding into new markets.
Navitas Semiconductor (Nasdaq: NVTS) has announced that its GaNFast technology powers the 150W charger for the new realme GT Neo 3 smartphone, unveiled at MWC 2022 in Barcelona. This charger can charge the phone's 4,500 mAh battery from 0-50% in just 5 minutes. GaN technology enables faster charging, higher power density, and improved energy efficiency compared to traditional silicon solutions. Navitas CEO Gene Sheridan highlighted this launch as a milestone in the ultra-fast charging sector.
Navitas Semiconductor (Nasdaq: NVTS) announced its participation in the CICC Investor Conference on March 1, 2022, highlighting the $13B gallium nitride (GaN) IC market and potential CO2 savings of up to 2.6 Gtons/year. GaN technology offers performance up to 20x faster than silicon, promising significant energy savings and a reduction in emissions. CEO Gene Sheridan emphasized GaN's crucial role in sustainability, benefiting companies like Xiaomi and Lenovo. The conference aims to share insights on the growing demand for GaN solutions.
