Navitas GaN ICs Drive Samsung Galaxy S22 Fast Charging
Navitas Semiconductor (Nasdaq: NVTS) announced its GaNFast technology has been selected for Samsung's Galaxy S22 Ultra and S22+ smartphones, featuring the world's most power-dense charger at 45W. This new charger achieves energy efficiency with a power density exceeding 1 W/cc, allowing for faster charging and reduced device size. GaN technology operates 20 times quicker than traditional silicon, with significant energy savings and lower CO2 emissions per unit shipped. Over 35 million GaNFast ICs have shipped with zero reported field failures.
- GaNFast technology selected for flagship Samsung Galaxy S22 Ultra and S22+ smartphones.
- Charger achieves a power density over 1 W/cc, the highest among Samsung chargers.
- GaN technology delivers up to 3x faster charging and 40% energy savings compared to silicon.
- None.
Next-gen semiconductor powers flagship Galaxy S22 Ultra and S22+ smartphones
EL SEGUNDO, Calif., March 14, 2022 /PRNewswire/ -- Navitas Semiconductor (Nasdaq: NVTS), the industry-leader in gallium nitride (GaN) power integrated circuits has announced that its GaNFast technology has been selected for Samsung's flagship Galaxy S22 Ultra and S22+ smartphones. The small, powerful 45W Super Fast charger has the highest power density of any Samsung charger, enabled by GaNFast power ICs.
The S22 Ultra, with 6.8" screen and 5,000 mAhr battery, and the S22+ (6.6" screen, 4,500 mAhr) are the latest-generation flagship smartphones from Samsung. The GaNFast 45W charger (model #EP-T4510) delivers fast-charging power across the complete USB-PD and PPS specification. Measuring only 47.4 x 27.9 x 43.6 mm (57.7 cc) the new Samsung fast charger achieves a power density over 1 W/cc.
GaN is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon chips. Navitas' proprietary GaN power ICs integrate GaN power (FET) and GaN drive plus control and protection in a single SMT package. The result is easy-to-use, high-speed, high-performance 'digital-in, power-out' building blocks that deliver up to 3x faster charging in half the size and weight, and with up to
"Samsung customers appreciate leading-edge technology with innovation, performance and quality," said Gene Sheridan, CEO and co-founder of Navitas. "Samsung and Navitas are aligned in providing next-generation performance while ensuring a focus on efficiency and sustainability. GaN delivers significant benefits to the planet – for every GaNFast power IC shipped reduces CO2 emissions by 4 kg."
About Navitas
Navitas Semiconductor (Nasdaq: NVTS) is the industry leader in GaN power ICs, founded in 2014. GaN power ICs integrate GaN power with drive, control and protection to enable faster charging, higher power density and greater energy savings for mobile, consumer, enterprise, eMobility and new energy markets. Over 145 Navitas patents are issued or pending, and over 35 million GaNFast power ICs have been shipped with zero reported GaN field failures. Navitas rang the Nasdaq opening bell and started trading on Nasdaq on October 20th, 2021.
Navitas Semiconductor, GaNFast and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited. All other brands, product names and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.
Contact Information
Stephen Oliver, VP Corporate Marketing & Investor Relations
ir@navitassemi.com
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SOURCE Navitas Semiconductor
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