Navitas Upgrades GaN IC Power by 50% for EV, Solar and Data Center
Navitas Semiconductor (Nasdaq: NVTS) announces the launch of the NV6169, a high-power 650/800 V-rated GaNFast™ power IC designed for demanding applications like 4K/8K TVs, gaming systems, and solar microinverters. This technology boasts 20x faster speeds than traditional silicon, with significant energy savings and size reductions. The NV6169 features a 36% decrease in on-resistance, enhancing power output by 50%. With zero reported failures from over 50 million GaN chips shipped, the NV6169's robust design includes industry-leading ESD ratings and a 20-year warranty, targeting higher-power markets.
- Launch of the NV6169 power IC for high-demand applications.
- 20x speed increase over traditional silicon semiconductors.
- 36% reduction in on-resistance leads to 50% more power output.
- Zero reported field failures from over 50 million GaN chips shipped.
- 20-year limited warranty enhances product reliability.
- None.
Next-gen semiconductor leader steps up from mobile fast-chargers to high-power applications
EL SEGUNDO, Calif., May 10, 2022 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the industry-leader in gallium nitride (GaN) power integrated circuits has announced the NV6169, a new high-power 650/800 V-rated GaNFast™ power IC with GaNSense™ technology to address higher-power applications such as 400-1000 W 4K/8K TVs and displays, next-generation gaming systems, 500 W solar microinverters, 1.2 kW data-center SMPS, and up to 4 kW / 5 hp motor drives.
GaN is a next-generation power semiconductor technology running 20x faster than traditional silicon. Compared with traditional silicon chargers, gallium nitride chargers can achieve 3x the power or 3x faster charging with up to
The 45 mOhms NV6169 features a
“Over 50,000,000 GaN power chips have been shipped to customers including Samsung, Dell, Lenovo and Xiaomi with zero reported GaN-related field failures, and GaNSense technology enables real-time, accurate sensing of voltage, current and temperature to further improve total system performance and robustness,” noted Dan Kinzer, Navitas’ COO/CTO and co-founder. “Unprotected, so-called ‘discrete’ GaN or silicon chips can’t match Navitas’ performance and reliability, and by offering the NV6169, we extend our reach into higher-power applications such as data centers, solar and EV – with an unprecedented 20-year limited warranty to accelerate GaN adoption into these more-demanding systems.”
The NV6169 is the highest-power-rated IC from the most-advanced, third-generation integrated GaN platform. GaNFast power ICs with GaNSense technology feature GaN-industry-first features such as loss-less current sensing and the world’s fastest short-circuit protection, with a ‘detect-to-protect’ speed of only 30 ns, 6x faster than discrete solutions. In motor-drive applications, GaN ICs deliver up to
Unlike competing solutions, the NV6169 is rated at 650V for nominal operation plus an 800 V peak-rating for robust operation during transient events. As a truly-integrated power IC, the GaN gate is fully-protected and the whole device rated at an industry-leading electrostatic-discharge (ESD) specification of 2 kV.
The NV6169 is available immediately to customers under NDA. Mass production lead times are currently 6 to 16 weeks. Simulation models (PSPICE/LTSPICE/SiMetrix), 3D package model (STP) and application note (AN-0016) are available to designers to optimize next generation systems.
About Navitas
Navitas Semiconductor (Nasdaq: NVTS) is the industry leader in GaN power ICs, founded in 2014. GaN power ICs integrate GaN power with drive, control, protection and sensing to enable faster charging, higher power density and greater energy savings for mobile, consumer, enterprise, eMobility and new-energy markets. Over 145 Navitas patents are issued or pending, and over 50 million units have been shipped with zero reported GaN field failures. Sustainability is a core focus, as every GaNFast power IC shipped saves 4 kg of CO2 emissions. Navitas rang the Nasdaq opening bell and started trading on Nasdaq on October 20th, 2021.
Navitas Semiconductor, GaNFast and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited. All other brands, product names and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.
Contact Information
Stephen Oliver
VP Corporate Marketing & Investor Relations
Navitas Semiconductor
ir@navitassemi.com
A photo accompanying this announcement is available at https://www.globenewswire.com/NewsRoom/AttachmentNg/386226a0-057f-4f10-8825-90c58a81ff58
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