Navitas Showcases Breakthroughs in GaN and SiC Technologies for AI Data Centers, EVs, and Mobile Applications at CES 2025
Navitas Semiconductor (NVTS) will showcase breakthrough technologies at CES 2025 in Las Vegas, focusing on AI data centers, EVs, and mobile applications. The company will present several innovations including the world's only 650V bi-directional GaNFast power ICs, an 8.5 kW AI data center power supply achieving 98% efficiency, and the highest power density AI power supply at 137 W/in3.
Key highlights include automotive-qualified Gen-3 Fast SiC MOSFETs, GaNSlim integrated solutions for mobile devices, and SiCPAK high-power modules for EV charging. The company's technologies aim to advance the transition from legacy silicon to next-generation GaN and SiC power semiconductors, potentially saving over 6,000 megatons of CO2 per year by 2050.
Navitas Semiconductor (NVTS) presenterà tecnologie all'avanguardia al CES 2025 di Las Vegas, concentrandosi su data center AI, veicoli elettrici e applicazioni mobili. L'azienda mostrerà diverse innovazioni, tra cui gli unici IC di potenza GaNFast bi-direzionali da 650V al mondo, un alimentatore per data center AI da 8,5 kW che raggiunge il 98% di efficienza e l'alimentazione AI con la più alta densità di potenza a 137 W/in3.
I punti salienti includono MOSFET Fast SiC di Gen-3 qualificati per il settore automobilistico, soluzioni GaNSlim integrate per dispositivi mobili e moduli ad alta potenza SiCPAK per la ricarica di veicoli elettrici. Le tecnologie dell'azienda mirano a promuovere la transizione dal silicio tradizionale ai semiconduttori di potenza GaN e SiC di nuova generazione, con un potenziale risparmio di oltre 6.000 megatonnellate di CO2 all'anno entro il 2050.
Navitas Semiconductor (NVTS) presentará tecnologías innovadoras en el CES 2025 en Las Vegas, enfocándose en centros de datos de IA, vehículos eléctricos y aplicaciones móviles. La empresa mostrará varias innovaciones, incluidos los únicos IC de potencia bidireccional GaNFast de 650V del mundo, una fuente de alimentación para centros de datos de IA de 8,5 kW que logra un 98% de eficiencia y la fuente de alimentación de IA con la mayor densidad de potencia a 137 W/in3.
Los aspectos destacados incluyen MOSFETs Fast SiC de Gen-3 calificados para la industria automotriz, soluciones integradas GaNSlim para dispositivos móviles y módulos de alta potencia SiCPAK para la carga de vehículos eléctricos. Las tecnologías de la empresa buscan avanzar en la transición del silicio convencional a los semiconductores de potencia GaN y SiC de próxima generación, con un potencial ahorro de más de 6,000 megatoneladas de CO2 por año para 2050.
Navitas Semiconductor (NVTS)는 라스베이거스에서 열리는 CES 2025에서 AI 데이터 센터, 전기차 및 모바일 애플리케이션에 초점을 맞춘 획기적인 기술을 선보일 예정입니다. 이 회사는 세계 유일의 650V 양방향 GaNFast 전력 IC, 98% 효율을 달성하는 8.5kW AI 데이터 센터 전원 공급장치, 137 W/in3의 최고 전력 밀도를 자랑하는 AI 전원 공급장치를 포함한 여러 혁신을 선보일 것입니다.
주요 하이라이트로는 자동차 인증을 받은 3세대 Fast SiC MOSFET, 모바일 장치를 위한 GaNSlim 통합 솔루션, 전기차 충전을 위한 고전력 SiCPAK 모듈이 있습니다. 이 회사의 기술은 기존 실리콘에서 차세대 GaN 및 SiC 전력 반도체로의 전환을 촉진하여 2050년까지 매년 6,000메가톤의 CO2를 절감할 수 있는 잠재력을 목표로 합니다.
Navitas Semiconductor (NVTS) présentera des technologies révolutionnaires lors du CES 2025 à Las Vegas, en mettant l'accent sur les centres de données AI, les véhicules électriques et les applications mobiles. L'entreprise présentera plusieurs innovations, y compris les seuls IC de puissance GaNFast bidirectionnels de 650V au monde, une alimentation électrique pour centre de données AI de 8,5 kW atteignant 98 % d'efficacité, et l'alimentation AI avec la plus haute densité de puissance à 137 W/in3.
Les points forts incluent des MOSFETs Fast SiC de 3e génération qualifiés pour l'automobile, des solutions intégrées GaNSlim pour les appareils mobiles et des modules de haute puissance SiCPAK pour la recharge des véhicules électriques. Les technologies de l'entreprise visent à avancer dans la transition du silicium traditionnel vers des semiconducteurs de puissance GaN et SiC de nouvelle génération, avec un potentiel d'économie de plus de 6 000 mégatonnes de CO2 par an d'ici 2050.
Navitas Semiconductor (NVTS) wird auf der CES 2025 in Las Vegas bahnbrechende Technologien präsentieren, die sich auf KI-Datenzentren, Elektrofahrzeuge und mobile Anwendungen konzentrieren. Das Unternehmen wird mehrere Innovationen vorstellen, einschließlich der einzigen bidirektionalen GaNFast-Leistungs-ICs mit 650V der Welt, einer 8,5 kW KI-Datenzentrumsstromversorgung mit einer Effizienz von 98 % und der leistungsstärksten KI-Stromversorgung mit einer Leistungsdichte von 137 W/in3.
Zu den Höhepunkten gehören automobilqualifizierte Gen-3 Fast SiC MOSFETs, integrierte GaNSlim-Lösungen für mobile Geräte und Hochleistungsmodule SiCPAK für das Laden von Elektrofahrzeugen. Die Technologien des Unternehmens zielen darauf ab, den Übergang von herkömmlichem Silizium zu modernen GaN- und SiC-Leistungshalbleitern voranzutreiben und bis 2050 potenziell über 6.000 Megatonnen CO2 pro Jahr einzusparen.
- World's first 8.5 kW OCP power solution achieving 98% efficiency for AI data centers
- Highest power density AI power supply at 137 W/in3 with over 97% efficiency
- PFC peak efficiencies of 99.3% with 30% reduced power losses
- Recognition as Top 500 fastest-growing technology company for third consecutive year
- None.
Insights
TORRANCE, Calif., Dec. 05, 2024 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced it will showcase several breakthroughs for AI data centers, EVs, and mobile technology at CES 2025 (Tech West, Venetian suite 29-335, January 7th - 10th). Navitas was recently acknowledged as the Top 500 fastest-growing technology company, by Deloitte’s Technology Fast 500™, for the third consecutive year.
The “Planet Navitas” suite will showcase the company’s mission to ‘Electrify our World™’ by advancing the transition from legacy silicon to next-generation, clean energy, GaN and SiC power semiconductors. These technologies are designed for high growth markets that demand the highest efficiency and power density, such as AI data centers, electric vehicles (EVs), and mobile. Additionally, Navitas will demonstrate how GaN and SiC technologies contribute to reducing carbon-footprint, with the potential to save over 6,000 megatons of CO2 per year by 2050.
Major technology and system breakthroughs include:
- World’s only 650V bi-directional GaNFast™ power ICs: Game-changing, disruptive GaN technology for next-generation solutions that require the highest efficiency and power density, with the lowest complexity, and significant component reduction.
- World’s First 8.5 kW AI Data Center Power Supply: See the world’s first 8.5 kW OCP power solution achieving
98% efficiency for AI and hyperscale data centers. Featuring high-power GaNSafe™ power ICs and Gen-3 Fast SiC MOSFETs in 3-Phase Interleaved CCM Totem-Pole PFC and 3-Phase LLC topologies to provide the highest efficiency, performance, and lowest component count. - World’s Highest Power Density AI Power Supply: Navitas delivers efficient 4.5 kW power in the smallest power-supply form-factor for the latest AI GPUs that demand 3x more power per rack. The optimized design uses high-power GaNSafe ICs and Gen-3 Fast SiC MOSFETs enabling the world’s highest power density with 137 W/in3 and over
97% efficiency. - ‘IntelliWeave’ Patented Digital Control Optimized for AI Data Center Power Supplies: Combined with high-power GaNSafe™ and Gen-3 ‘Fast’ SiC MOSFETs to enable PFC peak efficiencies of
99.3% and reduce power losses by30% compared to existing solutions. - Automotive Qualified (AEC-Q101) Gen-3 Fast SiC MOSFETs with ‘trench-assisted planar’ technology: Enabled by over 20 years of SiC innovation leadership, GeneSiC™ technology leads on performance with the Gen-3 ‘Fast’ SiC MOSFETs with ‘trench-assisted planar’ technology. This proprietary technology provides world-leading performance over temperature, delivering cool-running, fast-switching, and superior robustness to support faster charging EVs and up to 3x more powerful AI data centers.
- GaNSlim™: Simple. Fast. Integrated: A new generation of highly-integrated GaN power ICs that will further simplify and speed the development of small form factor, high-power-density applications by offering the highest level of integration and thermal performance. Target applications include chargers for mobile devices and laptops, TV power supplies, and lighting systems of up to 500W.
- SiCPAK™ High-Power Modules – Built for Endurance and Performance: Utilizing industry-leading 'trench-assisted planar'-gate technology and epoxy-resin potting for increased power cycling and long-lasting reliability, SiCPAK modules offer compact form factors and provide cost-effective, power-dense solutions for applications including EV charging, drives, solar, and energy storage systems (ESS).
- New Advancements in our Leading GaNFast & GeneSiC technology:
- GaNSense™ motor drive ICs with bi-directional loss-less current sensing, voltage sensing, and temperature protection, further enhancing performance and robustness beyond what is achievable by any discrete GaN or discrete silicon device.
- GeneSiC MOSFET die specifically optimized for EV traction modules with additional screening and gold metallization for sintering.
- Sustainable Solutions: Discover Navitas' vision to reduce up to 6 Gtons/year of CO₂ by 2050 with technologies that offer higher efficiency, density, and grid independence.
CES 2025 takes place in Las Vegas, NV from January 7th – 10th. The “Planet Navitas” suite is located in Tech West at the Venetian, suite 29-335.
To schedule a press meeting with Navitas at CES, please book here (via Calendly)
To schedule an IR meeting, please book here.
About Navitas
Navitas Semiconductor (Nasdaq: NVTS) is the only pure-play, next-generation power-semiconductor company, celebrating 10 years of power innovation founded in 2014. GaNFast™ power ICs integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary GeneSiC™ power devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Focus markets include AI datacenters, EV, solar, energy storage, home appliance / industrial, mobile and consumer. Over 300 Navitas patents are issued or pending, with the industry’s first and only 20-year GaNFast warranty. Navitas was the world’s first semiconductor company to be CarbonNeutral®-certified.
Navitas Semiconductor, GaNFast, GaNSense, GeneSiC and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.
Contact Information
Llew Vaughan-Edmunds, Sr Director, Product Management & Marketing
info@navitassemi.com
Stephen Oliver, VP Investor Relations
ir@navitassemi.com
A photo accompanying this announcement is available at https://www.globenewswire.com/NewsRoom/AttachmentNg/e3889989-7b5b-400d-a033-f2870c9cc9c4
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