Micron MRDIMM Innovations Deliver Highest Performance and Lowest Latency Main Memory to Accelerate Data Center Workloads
Micron Technology (Nasdaq: MU) has announced the sampling of its multiplexed rank dual inline memory modules (MRDIMMs), designed to enhance performance for memory-intensive data center workloads. These MRDIMMs offer up to 256GB capacity with 40% lower latency compared to current TSV RDIMMs. Key advantages include:
- Up to 39% increase in effective memory bandwidth
- Greater than 15% better bus efficiency
- Up to 40% latency improvements
- Support for 32GB to 256GB capacities
- Improved thermal design reducing DRAM temperatures by up to 20°C
Compatible with Intel Xeon 6 processors, MRDIMMs are set to ship in volume in the second half of 2024, promising to accelerate AI, HPC, and virtualized multi-tenant workloads while optimizing energy efficiency and total system task energy.
- Introduction of high-performance MRDIMMs with up to 256GB capacity
- 40% lower latency compared to current TSV RDIMMs
- Up to 39% increase in effective memory bandwidth
- Greater than 15% improvement in bus efficiency
- Improved thermal design reducing DRAM temperatures by up to 20°C
- 35% performance improvement for 256GB TFF MRDIMMs over similar-capacity TSV RDIMMs
- Compatibility with Intel Xeon 6 processors
- Volume shipping scheduled for second half of 2024
- None.
Micron's introduction of MRDIMMs represents a significant advancement in memory technology, specifically tailored for high-performance computing (HPC) and artificial intelligence (AI) applications. The 40% lower latency and up to 256GB capacity per DIMM slot are particularly noteworthy. Lower latency means faster data access, important for applications that need real-time processing, such as AI inferencing. Furthermore, the 32GB to 256GB capacity range provides flexibility for different workload requirements, ensuring that data centers can scale their memory resources efficiently. The use of DDR5 standards also promises future compatibility, making this a sustainable long-term investment.
From a financial perspective, Micron's new MRDIMMs could significantly enhance the company's market position in the data center segment. The increased bandwidth and lower latency can drive demand from enterprises looking to optimize their data centers, potentially leading to increased revenue streams. Moreover, the improved performance per watt aligns well with the current emphasis on energy efficiency, which could attract clients focused on reducing operational costs. Investors should note how this product may affect Micron's market share in the memory space, especially given its compatibility with Intel's Xeon 6 processors, a widely-used platform in data centers.
The launch of Micron MRDIMMs addresses a critical bottleneck in data centers: memory bandwidth. As AI and HPC applications grow more prevalent, the need for high-performing memory solutions has become more pressing. Micron's proactive approach in developing MRDIMMs demonstrates a keen understanding of market needs. Given the projected growth in AI and HPC markets, this product could position Micron as a preferred vendor for organizations upgrading their data center infrastructure. The potential impact on the market can be substantial as more companies seek to leverage these enhanced capabilities for competitive advantage.
Transformative Micron MRDIMMs power memory-intensive applications like AI and HPC with up to 256GB capacity at
BOISE, Idaho, July 16, 2024 (GLOBE NEWSWIRE) -- Micron Technology, Inc. (Nasdaq: MU), today announced it is now sampling its multiplexed rank dual inline memory module (MRDIMMs). The MRDIMMs will enable Micron customers to run increasingly demanding workloads and obtain maximum value out of their compute infrastructure. For applications requiring more than 128GB of memory per DIMM slot, Micron MRDIMMs outperform current TSV RDIMMs by enabling the highest bandwidth, largest capacity with the lowest latency and improved performance per watt to accelerate memory-intensive virtualized multi-tenant, HPC and AI data center workloads.1 The new memory offering is the first generation in the Micron MRDIMM family and will be compatible with Intel® Xeon® 6 processors.
“Micron’s latest innovative main memory solution, MRDIMM, delivers the much-needed bandwidth and capacity at lower latency to scale AI inference and HPC applications on next-generation server platforms,” said Praveen Vaidyanathan, vice president and general manager of Micron’s Compute Products Group. “MRDIMMs significantly lower the amount of energy used per task while offering the same reliability, availability and serviceability capabilities and interface as RDIMMs, thus providing customers a flexible solution that scales performance. Micron’s close industry collaborations ensure seamless integration into existing server infrastructures and smooth transitions to future compute platforms.”
By implementing DDR5 physical and electrical standards, MRDIMM technology delivers a memory advancement that allows scaling of both bandwidth and capacity per core to future-proof compute systems and meets the expanding demands of data center workloads. MRDIMMs provide the following advantages over RDIMMs: 2
- Up to
39% increase in effective memory bandwidth2 - Greater than
15% better bus efficiency2 - Up to
40% latency improvements compared to RDIMMs3
MRDIMMs support a wide capacity range from 32GB to 256GB in standard and tall form factors (TFF), which are suitable for high-performance 1U and 2U servers. The improved thermal design of TFF modules reduces DRAM temperatures by up to 20 degrees Celsius at the same power and airflow,4 enabling more efficient cooling capabilities in data centers and optimizing total system task energy for memory-intensive workloads. Micron’s industry-leading memory design and process technology using 32Gb DRAM die enables 256GB TFF MRDIMMs to have the same power envelope as 128GB TFF MRDIMMs using 16Gb die. A 256GB TFF MRDIMM provides a
“By leveraging DDR5 interfaces and technology, MRDIMMs provide seamless compatibility with existing Xeon 6 CPU platforms, giving customers flexibility and choice,” said Matt Langman, vice president and general manager of Datacenter Product Management, Intel Xeon 6 at Intel. “MRDIMMs provide customers a full choice of higher bandwidth, lower latencies and capacity points for HPC, AI and a plethora of workloads, all on the same Xeon 6 CPU platforms that also support standard DIMMs. Our customers will benefit from Micron’s broad portfolio of MRDIMMs ranging from 32GB to 256GB densities and in standard and tall form factors that will be validated with Intel Xeon 6 platforms.”
"As processor and GPU vendors have given us exponentially more cores, the memory bandwidth required to deliver balanced system performance has lagged. Micron MRDIMMs will help close the bandwidth gap for memory-intensive workloads like AI inference, AI retraining and countless high-performance computing workloads," said Scott Tease, vice president and general manager of AI and High-Performance Computing at Lenovo. "Our collaboration with Micron is stronger than ever, and laser-focused on delivering balanced, high-performance, sustainable technology solutions to our mutual customers."
Micron MRDIMMs are available now and will be shipping in volume in the second half of calendar year 2024. Subsequent generations of MRDIMMs will continue to deliver up to
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About Micron Technology, Inc.
We are an industry leader in innovative memory and storage solutions transforming how the world uses information to enrich life for all. With a relentless focus on our customers, technology leadership, and manufacturing and operational excellence, Micron delivers a rich portfolio of high-performance DRAM, NAND and NOR memory and storage products through our Micron® and Crucial® brands. Every day, the innovations that our people create fuel the data economy, enabling advances in artificial intelligence (AI) and compute-intensive applications that unleash opportunities — from the data center to the intelligent edge and across the client and mobile user experience. To learn more about Micron Technology, Inc. (Nasdaq: MU), visit micron.com.
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1 Read-only bandwidth data based on GNR-AP platform at different memory clocks for MRDIMM (empirical at 8800MT/s) and TSV RDIMM (projected at 6400MT/s) using the Intel Memory Latency Checker (MLC) tool.
2 Empirical data comparing 128GB MRDIMM 8800MT/s against 128GB RDIMM 6400MT/s using the Intel Memory Latency Checker (MLC) tool.
3 Empirical Stream Triad data comparing 128GB MRDIMM 8800MT/s against 128GB RDIMM 6400MT/s.
4 Maximum DRAM temperature simulations comparing standard form factor (SFF) DIMMs in a 1U server chassis compared to tall form factor (TFF) MRDIMMs in a 2U server chassis.
5 Read-only bandwidth data based on GNR-AP platform at different memory clocks for MRDIMMs (empirical data at 8800MT/s) and TSV RDIMMs (projected data at 6400MT/s for current generation) using the Intel Memory Latency Checker (MLC) tool.
6 Increase in data rate based on expected future speeds of MRDIMMs over RDIMMs.
FAQ
What are the key features of Micron's new MRDIMMs announced on July 16, 2024?
When will Micron (MU) begin volume shipping of the new MRDIMMs?
What processor platforms are Micron's new MRDIMMs compatible with?
How do Micron's MRDIMMs improve thermal performance compared to current solutions?
