Mitsubishi Electric to Ship Samples of Wider-temperature-range CWDM 100Gbps (53Gbaud PAM4) EML Chip for Data Centers
Mitsubishi Electric announced the shipment of samples for its new 100Gbps EML laser diode chip, set to begin on November 1. This chip will serve as a light source in 400Gbps optical transceivers for data centers, significantly reducing power consumption and costs. The chip's unique hybrid waveguide structure allows operation at temperatures from 5 to 85°C, eliminating the need for conventional temperature-control units. This innovation is expected to enhance efficiency in optical fiber communication systems.
- Introduction of a new 100Gbps EML laser diode chip expected to lower power consumption and costs.
- Wide operational temperature range (5 to 85°C) improves flexibility in data center applications.
- None.
Will reduce power consumption and costs of 400 Gbps optical transceivers for data centers
1) High-speed, wider-temperature operation with unique hybrid waveguide structure
- Unique hybrid waveguide structure (Fig. 1) combines a buried heterostructure laser diode for high optical-output-power and a high-mesa waveguide electro absorption modulator (EAM) for a high extinction ratio and wide frequency range.
- 53Gbaud PAM4 operation is available in temperatures ranging from 5 to 85°C (Fig. 2) due to optimized design parameters for the laser diode and modulator sections.
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