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Mitsubishi Electric to Ship Samples of Wider-temperature-range CWDM 100Gbps (53Gbaud PAM4) EML Chip for Data Centers

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Mitsubishi Electric announced the shipment of samples for its new 100Gbps EML laser diode chip, set to begin on November 1. This chip will serve as a light source in 400Gbps optical transceivers for data centers, significantly reducing power consumption and costs. The chip's unique hybrid waveguide structure allows operation at temperatures from 5 to 85°C, eliminating the need for conventional temperature-control units. This innovation is expected to enhance efficiency in optical fiber communication systems.

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  • Introduction of a new 100Gbps EML laser diode chip expected to lower power consumption and costs.
  • Wide operational temperature range (5 to 85°C) improves flexibility in data center applications.
Negative
  • None.

Will reduce power consumption and costs of 400 Gbps optical transceivers for data centers

TOKYO--(BUSINESS WIRE)-- Mitsubishi Electric Corporation (TOKYO:6503) announced today that it will begin shipping samples of its 100Gbps (53Gbaud) four-level pulse-amplitude modulation (PAM4) electro-absorption modulator (EML) laser diode chip for coarse wavelength division multiplexing (CWDM) on November 1. The semiconductor diode is expected to be applied in sets of four EML chips as a light source in optical transceivers for 400Gbps optical fiber communication in data centers. Thanks to the new EML’s operability in a wider range of temperatures, it will help to lower the power consumption and costs of optical transceivers by eliminating the need for conventional temperature-control units.

1) High-speed, wider-temperature operation with unique hybrid waveguide structure

  • Unique hybrid waveguide structure (Fig. 1) combines a buried heterostructure laser diode for high optical-output-power and a high-mesa waveguide electro absorption modulator (EAM) for a high extinction ratio and wide frequency range.
  • 53Gbaud PAM4 operation is available in temperatures ranging from 5 to 85°C (Fig. 2) due to optimized design parameters for the laser diode and modulator sections.

For the full text, please visit: www.MitsubishiElectric.com/news/

Customer Inquiries

Semiconductor & Device Marketing Div.B

Mitsubishi Electric Corporation

www.MitsubishiElectric.com/semiconductors/

Media Inquiries

Takeyoshi Komatsu

Public Relations Division

Mitsubishi Electric Corporation

Tel: +81-3-3218-2346

prd.gnews@nk.MitsubishiElectric.co.jp

www.MitsubishiElectric.com/news/

Source: Mitsubishi Electric Corporation

FAQ

What is Mitsubishi Electric's new product for data centers?

Mitsubishi Electric is launching a 100Gbps EML laser diode chip for 400Gbps optical transceivers, starting on November 1.

How does the new EML chip benefit data centers?

The new EML chip reduces power consumption and costs by eliminating the need for conventional temperature-control units.

What is the operational temperature range of the new laser diode chip?

The new laser diode chip operates effectively in a temperature range of 5 to 85°C.

When will Mitsubishi Electric start shipping the new EML laser diode samples?

Mitsubishi Electric will begin shipping samples of the new EML laser diode on November 1.

What is the significance of the hybrid waveguide structure in the new EML chip?

The hybrid waveguide structure combines high optical-output power with a wide frequency range, improving performance.

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