SK hynix Develops Industry's First 1c DDR5
SK hynix has developed the industry's first 16Gb DDR5 using its 1c node, the sixth generation of the 10nm process. This breakthrough marks the beginning of extreme scaling closer to 10nm in memory process technology. The company achieved this by extending the platform of its industry-leading 1b technology.
Key improvements include:
- Enhanced cost competitiveness through new material adoption and EUV process optimization
- 11% improvement in operating speed to 8Gbps
- 9% improvement in power efficiency
- Potential 30% reduction in data center electricity costs
SK hynix plans to begin mass production within the year, with volume shipment expected in 2025. The company aims to apply this technology to next-generation products like HBM, LPDDR6, and GDDR7.
SK hynix ha sviluppato il primo DDR5 da 16Gb del settore utilizzando il suo node 1c, la sesta generazione del processo a 10nm. Questa innovazione segna l'inizio di una scalabilità estrema, avvicinandosi ai 10nm nella tecnologia di processo della memoria. L'azienda ha raggiunto questo traguardo estendendo la piattaforma della sua tecnologia 1b, leader del settore.
I principali miglioramenti includono:
- Aumento della competitività dei costi attraverso l'adozione di nuovi materiali e ottimizzazione del processo EUV
- Miglioramento dell'11% nella velocità di funzionamento fino a 8Gbps
- Miglioramento del 9% nell'efficienza energetica
- Riduzione potenziale del 30% nei costi elettrici dei data center
SK hynix prevede di iniziare la produzione di massa entro quest'anno, con spedizioni previste per il 2025. L'azienda punta ad applicare questa tecnologia ai prodotti di prossima generazione come HBM, LPDDR6 e GDDR7.
SK hynix ha desarrollado el primer DDR5 de 16Gb de la industria utilizando su nodo 1c, la sexta generación del proceso de 10nm. Este avance marca el comienzo de una escalabilidad extrema más cercana a los 10nm en la tecnología de proceso de memoria. La compañía logró esto ampliando la plataforma de su tecnología 1b, líder en la industria.
Las principales mejoras incluyen:
- Mayor competitividad de costos a través de la adopción de nuevos materiales y optimización del proceso EUV
- Mejora del 11% en la velocidad operativa hasta 8Gbps
- Mejora del 9% en la eficiencia energética
- Reducción potencial del 30% en los costos eléctricos de los centros de datos
SK hynix planea comenzar la producción en masa dentro del año, con envíos a gran escala esperados para 2025. La empresa tiene la intención de aplicar esta tecnología a productos de próxima generación como HBM, LPDDR6 y GDDR7.
SK hynix는 1c 노드를 사용하여 업계 최초의 16Gb DDR5를 개발했습니다. 이는 10nm 공정의 여섯 번째 세대입니다. 이 혁신은 메모리 프로세스 기술에서 10nm에 더 가까운 극단적인 확장의 시작을 의미합니다. 회사는 업계 최고의 1b 기술의 플랫폼을 확장하여 이를 달성했습니다.
주요 개선 사항은 다음과 같습니다:
- 신소재 채택 및 EUV 프로세스 최적화를 통한 비용 경쟁력 강화
- 8Gbps까지 운영 속도 11% 향상
- 전력 효율성 9% 향상
- 데이터 센터 전기 비용의 잠재적 30% 절감
SK hynix는 올해 내에 대량 생산을 시작할 계획이며, 2025년에는 대량 출하가 예상됩니다. 이 회사는 HBM, LPDDR6 및 GDDR7과 같은 차세대 제품에 이 기술을 적용할 계획입니다.
SK hynix a développé le premier DDR5 de 16Gb de l'industrie utilisant son nœud 1c, la sixième génération du processus 10nm. Cette avancée marque le début d'une mise à l'échelle extrême plus proche de 10nm dans la technologie de processus de mémoire. L'entreprise a atteint cela en étendant la plateforme de sa technologie 1b qui est leader dans l'industrie.
Les principales améliorations incluent :
- Renforcement de la compétitivité des coûts grâce à l'adoption de nouveaux matériaux et à l'optimisation du processus EUV
- Amélioration de 11 % de la vitesse de fonctionnement atteignant 8Gbps
- Amélioration de 9 % de l'efficacité énergétique
- Réduction potentielle de 30 % des coûts électriques des centres de données
SK hynix prévoit de commencer la production de masse cette année, avec des expéditions importantes attendues en 2025. L'entreprise vise à appliquer cette technologie à des produits de prochaine génération tels que HBM, LPDDR6 et GDDR7.
SK hynix hat die erste DDR5 mit 16Gb der Branche mit seinem 1c-Knoten entwickelt, der zur sechsten Generation des 10nm-Prozesses gehört. Dieser Durchbruch markiert den Beginn einer extremen Skalierung näher zu 10nm in der Speicherprozesstechnologie. Das Unternehmen erreichte dies, indem es die Plattform seiner 1b-Technologie, die branchenführend ist, erweiterte.
Wesentliche Verbesserungen umfassen:
- Erhöhte Kostenwettbewerbsfähigkeit durch die Einführung neuer Materialien und die Optimierung des EUV-Prozesses
- 11% Verbesserung der Betriebsgeschwindigkeit auf 8Gbps
- 9% Verbesserung der Energieeffizienz
- Potenzielle Reduzierung der Stromkosten in Rechenzentren um 30%
SK hynix plant, noch in diesem Jahr mit der Serienproduktion zu beginnen, wobei mit einer voluminösen Auslieferung im Jahr 2025 gerechnet wird. Das Unternehmen zielt darauf ab, diese Technologie auf Produkte der nächsten Generation wie HBM, LPDDR6 und GDDR7 anzuwenden.
- First in industry to develop 16Gb DDR5 using 1c node technology
- 11% improvement in operating speed to 8Gbps
- 9% enhancement in power efficiency
- Potential 30% reduction in data center electricity costs
- 30% increase in productivity through design innovation
- Mass production readiness within the year
- Planned application to high-value products like HBM, LPDDR6, and GDDR7
- None.
- 1c node, 6th generation of 10nm process, developed in most efficient way by applying platform of industry-leading 1b technology
- Cost competitiveness improved with adoption of new material, optimization of EUV process, while power efficiency enhanced to help reduce electricity cost of data centers by
30% maximum - Mass production expected to be ready this year for volume shipment in 2025
- Application of 1c node to leading-edge DRAM products to bring differentiated values to customers
The success marks the beginning of the extreme scaling to the level closer to 10nm in the memory process technology.
The degree of difficulty to advance the shrinking process of the 10nm-range DRAM technology has grown over generations, but SK hynix has become the first in the industry to overcome the technological limitations by raising the level of completion in design, thanks to its industry-leading technology of the 1b, the fifth generation of the 10nm process.
SK hynix said it will be ready for mass production of the 1c DDR5 within the year to start volume shipment next year.
In order to reduce potential errors stemming from the procedure of advancing the process and transfer the advantage of the 1b, which is widely applauded for its best performing DRAM, in the most efficient way, the company extended the platform of the 1b DRAM for development of 1c.
The new product comes with an improvement in cost competitiveness, compared with the previous generation, by adopting a new material in certain process of the extreme ultra violet, or EUV, while optimizing the EUV application process of total. SK hynix also enhanced productivity by more than
The operating speed of the 1c DDR5, expected to be adopted for high-performance data centers, is improved by
"We are committed to providing differentiated values to customers by applying the 1c technology equipped with the best performance and cost competitiveness to our major next-generation products including HBM, LPDDR6, and GDDR7," said Head of DRAM Development Kim Jonghwan. "We will continue to work towards maintaining the leadership in the DRAM space and position as the most-trusted AI memory solution provider."
*HBM(High Bandwidth Memory): a high-value, high-performance memory that vertically interconnects multiple DRAM chips and dramatically increases data processing speed in comparison to conventional DRAM products. Since the introduction of the first HBM, the generation has shifted to HBM2, HBM2E, HBM3, HBM3E, HBM4 and HBM4E. |
*LPDDR: low power DRAM for mobile devices, including smartphones and tablets, which aims to minimize power consumption and features low voltage operation. The latest specifications are for the 7th generation, succeeding the series that end with 1, 2, 3, 4, 4X, 5 and 5X. |
*GDDR(Graphics DDR): a standard specification of graphics DRAM defined by the Joint Electron Device Engineering Council (JEDEC) and specialized for processing graphics more quickly. Its generation has shifted from GDDR3, GDDR5, GDDR5X, GDDR6 to GDDR7. With the newer generation promising faster speed and higher power efficiency, GDDR has now become one of the most popular memory chips for AI. |
About SK hynix Inc.
SK hynix Inc., headquartered in
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SOURCE SK hynix Inc.
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