Guerrilla RF Unveils New Gallium Nitride (GaN) Dice for High-Performance RF Applications
Guerrilla RF (OTCQX: GUER) has launched the GRF0020D and GRF0030D, its first GaN on SiC HEMT power amplifiers. The GRF0030D delivers up to 50W of saturated power at 50V operation from DC to 6GHz, with gain ranging from 13.5dB to 23.7dB, and 27.5W at 28V. The GRF0020D provides 30W and 19W of saturated power at 50V and 28V respectively, supporting frequencies up to 7GHz with 13.8dB to 24.3dB gain.
These unmatched discrete transistors target wireless infrastructure, military, aerospace, and industrial heating markets. The devices are 100% DC production tested for KGD compliance and are now available starting at $30 for 100-piece quantities. According to Yole Group, the RF GaN device market is projected to grow from $1.3B in 2022 to $2.7B by 2028, with strong growth in telecom infrastructure, military, and satellite communications sectors.
Guerrilla RF (OTCQX: GUER) ha lanciato i suoi primi amplificatori di potenza GaN su SiC HEMT, il GRF0020D e il GRF0030D. Il GRF0030D offre fino a 50W di potenza saturata a 50V con operazione da DC a 6GHz, con un guadagno che varia da 13,5dB a 23,7dB, e 27,5W a 28V. Il GRF0020D fornisce 30W e 19W di potenza saturata a 50V e 28V rispettivamente, supportando frequenze fino a 7GHz con guadagni che vanno da 13,8dB a 24,3dB.
Questi transistor discreti senza pari sono destinati a infrastrutture wireless, militari, aerospaziali e mercati del riscaldamento industriale. I dispositivi sono testati al 100% in produzione DC per la conformità KGD e sono ora disponibili a partire da $30 per quantità di 100 pezzi. Secondo Yole Group, il mercato dei dispositivi RF GaN è previsto crescere da $1,3 miliardi nel 2022 a $2,7 miliardi entro il 2028, con una forte crescita nei settori delle infrastrutture telecom, militari e comunicazioni satellitari.
Guerrilla RF (OTCQX: GUER) ha lanzado sus primeros amplificadores de potencia GaN en SiC HEMT, el GRF0020D y el GRF0030D. El GRF0030D proporciona hasta 50W de potencia saturada a 50V con operación de DC a 6GHz, con una ganancia que varía de 13.5dB a 23.7dB, y 27.5W a 28V. El GRF0020D ofrece 30W y 19W de potencia saturada a 50V y 28V respectivamente, soportando frecuencias de hasta 7GHz con una ganancia de 13.8dB a 24.3dB.
Estos transistores discretos inigualables están dirigidos a la infraestructura inalámbrica, militar, aeroespacial y el mercado de calefacción industrial. Los dispositivos son probados al 100% en producción DC para la conformidad KGD y están disponibles a partir de $30 por cantidades de 100 piezas. Según Yole Group, se proyecta que el mercado de dispositivos RF GaN crecerá de $1.3 mil millones en 2022 a $2.7 mil millones para 2028, con un fuerte crecimiento en las infraestructuras de telecomunicaciones, el sector militar y las comunicaciones por satélite.
게릴라 RF (OTCQX: GUER)는 첫 번째 GaN on SiC HEMT 전력 증폭기인 GRF0020D 및 GRF0030D를 출시했습니다. GRF0030D는 50V에서 최대 50W의 포화 전력을 DC에서 6GHz까지 제공하며, 이득은 13.5dB에서 23.7dB 사이이고, 28V에서 27.5W를 제공합니다. GRF0020D는 50V 및 28V에서 각각 30W 및 19W의 포화 전력을 제공하며, 13.8dB에서 24.3dB까지의 이득으로 최대 7GHz의 주파수를 지원합니다.
이 비교할 수 없는 이산 트랜지스터는 무선 인프라, 군사, 항공 우주 및 산업 열 시장을 목표로 하고 있습니다. 이 장치는 100% DC 생산 테스트를 통해 KGD 준수를 확인하며, 현재 100개 수량 기준으로 $30부터 구매할 수 있습니다. Yole Group에 따르면, RF GaN 장치 시장은 2022년 13억 달러에서 2028년 27억 달러로 성장할 것으로 예상되며, 통신 인프라, 군사 및 위성 통신 분야에서 강력한 성장을 보일 것입니다.
Guerrilla RF (OTCQX: GUER) a lancé ses premiers amplificateurs de puissance GaN sur SiC HEMT, le GRF0020D et le GRF0030D. Le GRF0030D offre jusqu'à 50W de puissance saturée à 50V avec un fonctionnement de DC à 6GHz, avec un gain allant de 13,5dB à 23,7dB, et 27,5W à 28V. Le GRF0020D fournit 30W et 19W de puissance saturée à 50V et 28V respectivement, prenant en charge des fréquences allant jusqu'à 7GHz avec un gain de 13,8dB à 24,3dB.
Ces transistors discrets inégalés ciblent les infrastructures sans fils, le militaire, l'aérospatial et les marchés du chauffage industriel. Les dispositifs sont testés à 100% en production DC pour la conformité KGD et sont désormais disponibles à partir de 30 $ pour des quantités de 100 pièces. Selon Yole Group, le marché des dispositifs RF GaN devrait passer de 1,3 milliard de dollars en 2022 à 2,7 milliards de dollars d'ici 2028, avec une forte croissance dans les infrastructures de télécommunications, le secteur militaire et les communications par satellite.
Guerrilla RF (OTCQX: GUER) hat seine ersten GaN auf SiC HEMT Leistungsverstärker, den GRF0020D und den GRF0030D, auf den Markt gebracht. Der GRF0030D liefert bis zu 50W gesättigte Leistung bei 50V im Betrieb von DC bis 6GHz, mit einer Verstärkung die von 13,5dB bis 23,7dB reicht, und 27,5W bei 28V. Der GRF0020D bietet 30W und 19W gesättigte Leistung bei 50V und 28V respektive und unterstützt Frequenzen bis zu 7GHz mit einer Verstärkung von 13,8dB bis 24,3dB.
Diese unvergleichlichen diskreten Transistoren richten sich an drahtlose Infrastruktur, Militär, Luft- und Raumfahrt sowie industrielle Heizmärkte. Die Geräte werden zu 100% in der DC-Produktion auf KGD-Konformität getestet und sind jetzt ab $30 für 100 Stück erhältlich. Laut Yole Group wird erwartet, dass der Markt für RF GaN Geräte von 1,3 Milliarden US-Dollar im Jahr 2022 auf 2,7 Milliarden US-Dollar bis 2028 wachsen wird, mit starkem Wachstum in den Bereichen Telekommunikationsinfrastruktur, Militär und Satellitenkommunikation.
- Entry into high-growth RF GaN market projected to reach $2.7B by 2028
- U.S.-based manufacturing aligns with CHIPS Act requirements
- Products already experiencing strong market demand
- Competitive pricing at $30 per unit for 100-piece quantities
- None.
First in a Series of New GaN on SiC HEMT Dice Provide up to 50W of Power for Custom MMICs
Guerrilla RF, Inc. (OTCQX: GUER) announces the formal release of the GRF0020D and GRF0030D, the first in a new class of GaN on SiC HEMT power amplifiers being developed by the company. (Graphic: Business Wire)
Each device offers exceptional flexibility, supporting either 50V or 28V supply rails while covering multiple octaves of operational bandwidth for continuous wave, linear, and pulsed modulation schemes. When using a 50V rail, the GRF0030D is rated for 50W (PSAT) operation from DC to 6GHz, with gain varying from 13.5dB to 23.7dB. The device also supports 28V operation while delivering up to 27.5W of saturated output power. Similarly, the GRF0020D variant provides up to 30W and 19W of saturated power when using 50V and 28V rails, respectively. This slightly lower power HEMT supports frequencies up to 7GHz while providing 13.8dB to 24.3dB of gain. As with all of Guerrilla RF’s bare die offerings, each device is
According to market research from Yole Group, the RF GaN device market is expected to grow from
Ryan Pratt, CEO and founder of Guerrilla RF, commented, “GaN technology is critical for next-generation, high-performance, energy-efficient RF systems and devices. We’re already seeing strong demand for the GRF0020D and GRF0030D.” He added, “Another advantage is that these devices are fabricated in the
Product Availability
The GRF0020D and GRF0030D are now available for ordering, with samples ready for distribution. Pricing starts at
About Guerrilla RF, Inc.
Founded in 2013, Guerrilla RF, Inc., develops and manufactures high-performance, state-of-the-art radio frequency (RF) and microwave semiconductors for wireless OEMs in multiple high-growth market segments, including network infrastructure for 5G/4G macro and small cell base stations, SATCOM, cellular repeaters/DAS, automotive telematics, military communications, navigation, and high-fidelity wireless audio. The Company has an extensive portfolio of 100+ high-performance RF and microwave semiconductor devices with 50+ new products in development. As one of the fastest-growing semiconductor firms in the industry, Guerrilla RF drives innovation through its R&D to commercialization initiatives and focuses on product excellence and custom solutions to underserved markets. The Company has shipped over 200 million devices and has repeatedly been included in Inc. Magazine’s annual "Inc. 5000" list. Guerrilla RF has made the top "Inc. 500" list for two years in a row. For more information, please visit https://guerrilla-rf.com or follow the Company on LinkedIn.
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View source version on businesswire.com: https://www.businesswire.com/news/home/20250116273782/en/
Jim Ahne, Senior Vice President of Marketing
jahne@guerrilla-rf.com
+1 336 265 7760
Source: Guerrilla RF, Inc.
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