Atomera Collaborates With the Center for Integrated Nanotechnologies (CINT) at Sandia National Laboratories to Validate MST’s Ability to Address GaN Manufacturing Challenges
Atomera Incorporated (NASDAQ: ATOM) has announced a collaboration with the Center for Integrated Nanotechnologies (CINT) at Sandia National Laboratories to address challenges in growing Gallium Nitride (GaN) films on Silicon (Si). The project aims to create the first GaN transistors using Atomera's Mears Silicon Technology™ (MST®).
The collaboration will utilize CINT's advanced facilities to quickly evaluate the effectiveness of GaN transistors with MST. The project builds on improvements observed in GaN/MST on Silicon wafers at the materials level. MST has the potential to improve GaN on Si manufacturing, offering benefits in speed, efficiency, and cost-saving for various industries including electronics, RF/microwave electronics, and MicroLEDs.
The project aims to validate the mechanical and electrical benefits of MST-enhanced GaN on Si, addressing manufacturing limitations that have hindered the widespread adoption of GaN for modern power electronics. MST's ability to relieve biaxial tensile stress could potentially improve the growth of GaN epitaxy on Si substrates, overcoming current limitations in commercially available GaN on Si power electronics devices.
Atomera Incorporated (NASDAQ: ATOM) ha annunciato una collaborazione con il Center for Integrated Nanotechnologies (CINT) dei Sandia National Laboratories per affrontare le sfide nella crescita di film di Nitruro di Gallio (GaN) su Silicio (Si). L'obiettivo del progetto è creare i primi transistor GaN utilizzando la tecnologia Mears Silicon Technology™ (MST®) di Atomera.
La collaborazione utilizzerà le avanzate strutture del CINT per valutare rapidamente l'efficacia dei transistor GaN con MST. Il progetto si basa sui miglioramenti osservati nei materiali GaN/MST su wafer di Silicio. La MST ha il potenziale di migliorare la produzione di GaN su Si, offrendo vantaggi in termini di velocità, efficienza e risparmio nei costi per vari settori, tra cui elettronica, elettronica RF/microwave e MicroLED.
Il progetto mira a convalidare i benefici meccanici ed elettrici del GaN su Si potenziato da MST, affrontando le limitazioni di produzione che hanno ostacolato l'adozione diffusa del GaN per l'elettronica di potenza moderna. La capacità della MST di alleviare lo stress teso biaxiale potrebbe migliorare potenzialmente la crescita dell'epitassia di GaN su substrati di Si, superando le attuali limitazioni dei dispositivi di elettronica di potenza GaN su Si disponibili commercialmente.
Atomera Incorporated (NASDAQ: ATOM) ha anunciado una colaboración con el Center for Integrated Nanotechnologies (CINT) de los Sandia National Laboratories para enfrentar los desafíos en el crecimiento de películas de Nitruro de Galio (GaN) sobre Silicio (Si). El proyecto tiene como objetivo crear los primeros transistores de GaN utilizando la tecnología Mears Silicon Technology™ (MST®) de Atomera.
La colaboración utilizará las avanzadas instalaciones del CINT para evaluar rápidamente la efectividad de los transistores de GaN con MST. El proyecto se basa en las mejoras observadas en GaN/MST sobre obleas de Silicio a nivel de materiales. MST tiene el potencial de mejorar la fabricación de GaN sobre Si, ofreciendo beneficios en velocidad, eficiencia y ahorro de costos para diversas industrias, incluidas la electrónica, la electrónica RF/microondas y MicroLEDs.
El proyecto busca validar los beneficios mecánicos y eléctricos del GaN sobre Si mejorado por MST, abordando las limitaciones de fabricación que han obstaculizado la adopción generalizada de GaN para la electrónica de potencia moderna. La capacidad de MST para aliviar el estrés tensil biaxial podría mejorar potencialmente el crecimiento de la epitaxia de GaN sobre sustratos de Si, superando las limitaciones actuales de los dispositivos de electrónica de potencia de GaN sobre Si disponibles comercialmente.
Atomera Incorporated (NASDAQ: ATOM)는 Sandia National Laboratories의 통합 나노기술 센터(CINT)와 협력하여 실리콘(Si) 위에 갈륨 나이트라이드(GaN) 필름을 성장시키는 데 있어 발생하는 문제를 해결하기 위한 협업을 발표했습니다. 이 프로젝트의 목표는 Atomera의 Mears Silicon Technology™ (MST®)를 사용하여 최초의 GaN 트랜지스터를 만드는 것입니다.
협력에서는 CINT의 첨단 시설을 활용하여 MST를 사용한 GaN 트랜지스터의 효과성을 신속하게 평가할 것입니다. 이 프로젝트는 소재 수준에서 실리콘 웨이퍼 위의 GaN/MST에서 관찰된 개선 사항을 바탕으로 합니다. MST는 GaN을 Si에서 제조하는 데 있어 속도, 효율성 및 비용 절감의 이점을 제공하여 전자기기, RF/마이크로파 전자기기 및 MicroLED를 포함한 다양한 산업에 이점을 줄 가능성이 있습니다.
이 프로젝트는 제조 한계를 해결하여 현대 전력 전자 기기에서 GaN의 광범위한 채택을 저해했던 MST 강화 GaN을 Si에서 검증하고자 합니다. MST가 이축 인장 응력을 완화할 수 있는 능력은 Si 기판 위의 GaN 에피택시 성장 개선에 기여할 수 있으며, 현재 시판되는 GaN on Si 전력 전자 기기의 제한을 극복할 수 있습니다.
Atomera Incorporated (NASDAQ: ATOM) a annoncé une collaboration avec le Center for Integrated Nanotechnologies (CINT) des Sandia National Laboratories pour relever les défis de la croissance de films de Nitrure de Gallium (GaN) sur Silicium (Si). Le projet vise à créer les premiers transistors GaN utilisant la Mears Silicon Technology™ (MST®) d'Atomera.
La collaboration utilisera les installations avancées du CINT pour évaluer rapidement l'efficacité des transistors GaN avec MST. Le projet s'appuie sur les améliorations observées dans les matériaux GaN/MST sur des plaquettes de Silicium. La MST a le potentiel d'améliorer la fabrication de GaN sur Si, offrant des avantages en termes de vitesse, d'efficacité et d'économies de coûts pour divers secteurs, y compris l'électronique, l'électronique RF/micro-ondes et les MicroLED.
Le projet vise à valider les avantages mécaniques et électriques du GaN sur Si amélioré par la MST, en abordant les limitations de fabrication qui ont freiné l'adoption généralisée du GaN dans l'électronique de puissance moderne. La capacité de la MST à soulager la contrainte de traction biaxiale pourrait potentiellement améliorer la croissance de l'épitaxie GaN sur des substrats Si, surmontant ainsi les limitations actuelles des dispositifs électroniques de puissance GaN sur Si commercialement disponibles.
Atomera Incorporated (NASDAQ: ATOM) hat eine Zusammenarbeit mit dem Center for Integrated Nanotechnologies (CINT) der Sandia National Laboratories angekündigt, um Herausforderungen beim Wachstum von Gallium-Nitrid (GaN)-Filmen auf Silizium (Si) zu bewältigen. Das Ziel des Projekts ist die Schaffung der ersten GaN-Transistoren unter Verwendung von Atomeras Mears Silicon Technology™ (MST®).
Die Zusammenarbeit wird die fortschrittlichen Einrichtungen des CINT nutzen, um die Wirksamkeit von GaN-Transistoren mit MST schnell zu bewerten. Das Projekt basiert auf den Verbesserungsvorschlägen, die beim Materialniveau von GaN/MST auf Silizium-Wafern festgestellt wurden. MST hat das Potenzial, die Herstellung von GaN auf Si zu verbessern und Vorteile hinsichtlich Geschwindigkeit, Effizienz und Kostensenkung für verschiedene Industrien wie Elektronik, RF/Mikrowellen-Elektronik und MicroLEDs zu bieten.
Das Projekt zielt darauf ab, die mechanischen und elektrischen Vorteile von MST-verbesserten GaN auf Si zu validieren und die Herstellungsbeschränkungen zu adressieren, die die weit verbreitete Einführung von GaN in modernen Leistungselektronik-Geräten behindern. Die Fähigkeit von MST, biaxiale Zugspannungen zu reduzieren, könnte das Wachstum der GaN-Epitaxie auf Si-Substraten potenziell verbessern und aktuelle Einschränkungen bei kommerziell verfügbaren GaN-on-Si-Leistungselektronikgeräten überwinden.
- Collaboration with Sandia National Laboratories' CINT to validate MST's effectiveness in GaN manufacturing
- Potential to improve GaN on Si manufacturing, offering speed, efficiency, and cost-saving benefits
- Opportunity to address manufacturing limitations hindering widespread adoption of GaN for power electronics
- MST's ability to relieve biaxial tensile stress could improve GaN epitaxy growth on Si substrates
- None.
Insights
This collaboration between Atomera and CINT at Sandia National Laboratories is a significant step towards addressing key challenges in GaN-on-Si manufacturing. The project aims to validate Atomera's MST technology in improving GaN film growth on silicon substrates, which could have far-reaching implications for the semiconductor industry.
The potential benefits include:
- Reduced wafer warping and cracking in GaN-on-Si production
- Improved efficiency and cost-savings in manufacturing
- Potential for larger wafer sizes and higher voltage ratings for GaN devices
While this is an early-stage research project, success could position Atomera as a key player in enabling advanced GaN-on-Si devices. This could open up new market opportunities in power electronics, RF/microwave and even MicroLED industries.
However, investors should note that this is still a research phase with no immediate revenue impact. The true value will depend on successful outcomes and subsequent commercialization, which may take several years. Atomera's small market cap of
The collaboration between Atomera and CINT is tackling a important challenge in the GaN-on-Si field. The key innovation here is the application of Mears Silicon Technology (MST) to address the stress-related issues in growing thick GaN films on Si substrates.
Current limitations in GaN-on-Si technology include:
- Voltage ratings capped at ~650V due to epi thickness constraints
- Wafer curvature and micro-cracking issues
- Yield problems at larger wafer sizes
MST's potential to relieve biaxial tensile stress could be a game-changer. If successful, this could enable thicker GaN layers on Si, potentially pushing voltage ratings beyond the current 650V limit. This would significantly expand the application range of GaN-on-Si devices in power electronics.
The use of CINT's advanced facilities should accelerate the evaluation process, providing important data on MST's effectiveness in real-world GaN transistors. This data will be vital in determining the technology's viability and potential impact on the GaN-on-Si manufacturing landscape.
CINT’s state-of-the-art facilities will enable Atomera to quickly evaluate the effectiveness of GaN transistors utilizing MST
“Atomera’s MST represents a tremendous opportunity to improve GaN on Si manufacturing and provide speed, efficiency and cost-saving benefits to a wide range of industries including electronics, RF/microwave electronics and even MicroLEDs. This user project will test the effectiveness of the MST solution quickly using CINT’s highly specialized tools and technology and give Atomera access to our team of scientists and researchers,” said Jeffrey Nelson, director of CINT.
Due to the limited availability and size of native substrates, most GaN devices have been grown heteroepitaxially on sapphire, silicon carbide or Si substrates. Although impressive performance has been achieved with each of these, only Si substrates offer a clear pathway to large wafer size, low cost and compatibility with well-established CMOS wafer fabrication lines. However, there are significant challenges, including wafer warping or cracking, associated with the growth of thick GaN films on Si (GaN/Si), particularly at large wafer sizes.
“Over the past approximately 25 years, GaN has transformed multiple industries, including lighting, RF/microwave and power electronics, but manufacturing limitations have hindered the widespread adoption of GaN for modern power electronics,” said Shawn Thomas, vice president of Marketing & Business Development at Atomera. “This user project with Sandia Labs will allow Atomera to fabricate devices and collect data to validate the mechanical and electrical benefits of MST-enhanced GaN on Si.”
Managing stress is the most important aspect of growing thick GaN epi on Si. Commercially available GaN on Si power electronics (PE) devices are currently limited to a ~650V rating due to the maximum epi thickness (and thus breakdown voltage) that can be grown on Si without excessive wafer curvature, micro-cracking or poor yield. MST can improve the growth of GaN epitaxy on Si substrates by relieving biaxial tensile stress.
To read more about MST and Atomera’s offerings, please visit www.atomera.com.
About Atomera
Atomera Incorporated is a semiconductor materials and technology licensing company focused on deploying its proprietary, silicon-proven technology into the semiconductor industry. Atomera has developed Mears Silicon Technology™ (MST®), which increases performance and power efficiency in semiconductor transistors. MST can be implemented using equipment already deployed in semiconductor manufacturing facilities and is complementary to other nanoscaling technologies in the semiconductor industry roadmap. More information can be found at www.atomera.com.
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Source: Atomera Incorporated
FAQ
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