Alpha and Omega Semiconductor Releases Automotive Qualified 1200VαSiC MOSFETs for Electric Vehicle Applications
Alpha and Omega Semiconductor Limited (AOSL) has launched the new AEC-Q101 qualified 1200V silicon carbide (SiC) αSiC MOSFETs, optimized for electric vehicle applications. These MOSFETs feature the lowest on-resistance for an automotive TO-247-4L package and are designed for 800V electrical systems, enhancing efficiency and reducing charging times. The device, AOM033V120X2Q, operates at a maximum junction temperature of 175°C and significantly reduces switching losses. This product aligns with the growing demand in the EV market and aims to support manufacturers' efficiency targets.
- Launch of automotive qualified 1200V SiC MOSFETs enhances AOSL's product portfolio.
- Lowest on-resistance available for an automotive TO-247-4L package improves efficiency.
- Designed specifically for 800V electrical systems, catering to the growing EV market.
- None.
Alpha and Omega Semiconductor Limited (AOS) (Nasdaq: AOSL) a designer, developer, and global supplier of a broad range of power semiconductors, power ICs, and digital power products, today announced the release of the new AEC-Q101 qualified 1200V silicon carbide (SiC) αSiC MOSFETs in optimized TO-247-4L package. Ideal for the high efficiency and reliability requirements of electric vehicle (EV) on-board chargers, motor drive inverters, and off-board charging stations, these 1200V SiC MOSFETs provide the industry-leading lowest on-resistance available for an automotive qualified TO-247-4L with a standard gate drive of 15V.
AOM033V120X2Q -- Automotive Qualified 1200V αSIC MOSFET (Photo: Business Wire)
As the EV market accelerates into millions of units per year, vehicle manufacturers are increasingly implementing 800V electrical systems to reduce the system’s size and weight while increasing range and enabling significantly faster charging speeds. AOS’s 1200V automotive grade αSiC MOSFETs are specifically designed for these demanding applications by providing superior switching performance and efficiency over standard silicon devices.
The AOM033V120X2Q is a 1200V / 33mΩ SiC MOSFET based on our second generation αSiC MOSFET platform packaged in an optimized TO-247-4L. Unlike the standard 3 lead package, using an additional sense lead reduces the package inductance effects and enables the device to operate at a higher switching frequency with up to
“For the continued transformation of transportation to EV technology, vehicle manufacturers making efforts to increase range and reduce the time spent charging. With our release of these automotive qualified 1200V αSiC MOSFETs, AOS can provide designers with next generation semiconductor technology to increase these efficiency targets. Our customers have selected our technology due to the combination of product performance, reliability, and volume capable supply chain,” said David Sheridan, Sr. Director of Wide Bandgap Products at AOS.
The automotive αSiC MOSFET portfolio will expand later this year to include a broader range of on-resistance and additional package options.
Technical Highlights:
- AEC-Q101 Qualified and PPAP capable
- Maximum operating junction temperature to 175°C
- Low on-resistance increase with temperature
- Low Qrr and robust body diode
- Kelvin-source connection for fast low-loss switching
Pricing and Availability
AOM033V120X2Q is immediately available for production quantities. Please contact your local sales representative for pricing.
FAQ
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