Alpha and Omega Semiconductor Releases 600V 110mOhm and 140mOhm αMOS5™ Super Junction MOSFETs in DFN8x8 Package
Alpha and Omega Semiconductor announced the launch of its new 600V αMOS5 Super Junction MOSFETs, AONV110A60 and AONV140A60, in a compact DFN8x8 package. The devices are designed for applications in servers, solar micro-inverters, and slim adapters, targeting high efficiency and low power loss. Internal benchmarks show a nearly 50% reduction in power loss compared to traditional diode bridges. With immediate availability and competitive pricing, these MOSFETs aim to meet the evolving demands for high-density, efficient power solutions.
- Launch of AONV110A60 and AONV140A60 enhances AOS's product portfolio.
- AONV110A60 reduces power loss by nearly 50% compared to traditional diode bridges.
- Immediate availability of products with competitive pricing of $3.96 and $3.36 per unit.
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Optimized for
Optimized for
Today’s
AOS’s newly released AONV110A60 and AONV140A60 are two 600V low ohmic MOSFETs packaged in the 8mm x 8mm x 0.9mm DFN8x8 with Kelvin Source. Compared to other packages such as D2PAK, DPAK, or TO-220(F), DFN8x8 is a smaller package offering a well-balanced footprint and thermal dissipation. The 64mm² footprint makes AONV110A60 and AONV140A60 ideal for
Besides Server applications, AONV110A60 and AONV140A60 also target Solar Micro Inverter and Slim Adapter applications. Micro-Inverter design sees the trend of converting solar energy from two panels via one inverter, which means doubled power rating but not necessarily doubled the system size. DFN8x8 devices could help achieve this goal by paralleling and reducing effective Rdson, and accordingly, power losses. DFN8x8’s Kelvin Source would be much favored in a high Fsw inverter design, where switching losses are more significant and need to be minimized. In slim adapter designs, DFN8x8 devices, together with high Fsw controllers and planar transformers, could easily push the system density to 20W+/ in3 and efficiency up to
“Years ago, we could hardly imagine high voltage DFN8x8 devices widely adopted for server systems above 400W, even limited in low power SMPS, since people are used to through-hole or larger packages such as TO-220(F) or D2PAK. The power design concept has changed tremendously and rapidly with more and more DFN8x8 devices used in Active-Bridge, PFC, Half-Bridge, and Full-Bridge topologies. DFN8x8 devices’ value proposition is clear, it is a high voltage SMD package that offers smaller form factor, better switching performance (Low Eon), higher system reliability (Low Gate Ringing), and easier board assembly. AOS will continue to provide our customers with differentiated solutions that best serve the application needs and mission profiles from low power universal charging to high power server, solar, and telecom rectifiers,” said
Technical Highlights
- Low Ohmic devices packaged in 64mm² DFN8x8
- Package Thickness < 1mm
- Kelvin Source and Low Eon/Gate Oscillation
- Automated SMT assembly
- MSL Level 1
Pricing and Availability
The AONV110A60 (600V 110mOhm DFN8x8) and AONV140A60 (600V 140mOhm DFN8x8) are immediately available in production quantities with a lead-time of 24 weeks. The unit price in 1000-piece quantities is
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