Vishay Intertechnology 650 V and 1200 V SiC Schottky Diodes in SOT-227 Package Increase Efficiency in High Frequency Applications
Vishay Intertechnology (NYSE: VSH) has introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the SOT-227 package. The new components include 40 A to 240 A dual diode devices in parallel configuration, and 50 A and 90 A single phase bridge devices.
The diodes feature a low forward voltage drop down to 1.36 V, reducing conduction losses for increased efficiency. Built on thin wafer technology, they offer improved reverse recovery parameters compared to Si-based diodes with virtually no recovery tail. The devices' low capacitive charge (QC) down to 56 nC enables high-speed switching.
Key applications include AC/DC PFC and DC/DC ultra high frequency output rectification in converters for photovoltaic systems, charging stations, industrial UPS, and telecom power supplies. The diodes operate at temperatures up to +175 °C and feature UL approval. Samples and production quantities are available with 18-week lead times.
Vishay Intertechnology (NYSE: VSH) ha introdotto 16 nuovi diodi Schottky in carburo di silicio (SiC) da 650 V e 1200 V nella confezione SOT-227. I nuovi componenti includono dispositivi a doppio diodo in configurazione parallela da 40 A a 240 A, e dispositivi a ponte monofase da 50 A e 90 A.
I diodi presentano una bassa caduta di tensione diretta fino a 1,36 V, riducendo le perdite per conduzione e aumentando l'efficienza. Realizzati con tecnologia a wafer sottile, offrono parametri di recupero inverso migliorati rispetto ai diodi a base di silicio, con praticamente nessuna coda di recupero. La bassa carica capacitiva (QC) fino a 56 nC consente un switching ad alta velocità.
Le principali applicazioni includono la correzione del fattore di potenza AC/DC e la rettificazione in uscita DC/DC a frequenza ultra alta nei convertitori per sistemi fotovoltaici, stazioni di ricarica, UPS industriali e alimentatori telecom. I diodi possono operare a temperature fino a +175 °C e sono dotati di approvazione UL. I campioni e le quantità in produzione sono disponibili con tempi di consegna di 18 settimane.
Vishay Intertechnology (NYSE: VSH) ha presentado 16 nuevos diodos Schottky de carburo de silicio (SiC) de 650 V y 1200 V en el paquete SOT-227. Los nuevos componentes incluyen dispositivos de diodo dual en configuración paralela de 40 A a 240 A, y dispositivos de puente monofásico de 50 A y 90 A.
Los diodos presentan una baja caída de voltaje directo de hasta 1.36 V, reduciendo las pérdidas por conducción y aumentando la eficiencia. Construidos con tecnología de obleas delgadas, ofrecen parámetros de recuperación inversa mejorados en comparación con los diodos de silicio, con prácticamente ninguna cola de recuperación. La baja carga capacitiva (QC) de hasta 56 nC permite el conmutador de alta velocidad.
Las aplicaciones clave incluyen PFC AC/DC y la rectificación de salida DC/DC de ultra alta frecuencia en convertidores para sistemas fotovoltaicos, estaciones de carga, UPS industriales y fuentes de alimentación telecom. Los diodos operan a temperaturas de hasta +175 °C y cuentan con la aprobación UL. Se encuentran disponibles muestras y cantidades de producción con plazos de entrega de 18 semanas.
Vishay Intertechnology (NYSE: VSH)는 SOT-227 패키지에서 650 V 및 1200 V 실리콘 카바이드(SiC) 쇼트키 다이오드 16종을 새롭게 출시했습니다. 새로운 구성요소에는 40 A에서 240 A까지의 병렬구성 이중 다이오드 장치와 50 A 및 90 A 단상 브리지 장치가 포함됩니다.
이 다이오드는 1.36 V까지 낮은 전압 강하를 특징으로 하여 전도 손실을 줄이고 효율을 높입니다. 얇은 웨이퍼 기술로 제작되어 실리콘 기반 다이오드에 비해 향상된 역회수 특성을 제공하며, 사실상 회수 꼬리가 없습니다. 장치의 낮은 정전용량 하중(QC)은 56 nC까지 가능하여 고속 스위칭을 지원합니다.
주요 적용 분야로는 태양광 시스템의 변환기에서의 AC/DC PFC 및 DC/DC 초고주파 출력 정류가 있으며, 충전소, 산업용 UPS 및 통신 전원 공급 장치도 포함됩니다. 이 다이오드는 +175 °C까지의 온도에서 작동하며 UL 승인을 받았습니다. 샘플 및 생산 수량은 18주 리드 타임으로 제공됩니다.
Vishay Intertechnology (NYSE: VSH) a introduit 16 nouveaux diodés Schottky en carbure de silicium (SiC) de 650 V et 1200 V dans l'emballage SOT-227. Les nouveaux composants comprennent des appareils à double diode en configuration parallèle allant de 40 A à 240 A, ainsi que des appareils à pont monophasé de 50 A et 90 A.
Les diodes présentent une faible chute de tension directe allant jusqu'à 1,36 V, réduisant les pertes de conduction pour une efficacité accrue. Fabriquées avec une technologie de plaquette mince, elles offrent des paramètres de récupération inverse améliorés par rapport aux diodes à base de silicium, avec pratiquement aucune traîne de récupération. La faible charge capacitive (QC) jusqu'à 56 nC permet un commutateur à grande vitesse.
Les applications clés incluent PFC AC/DC et redressement de sortie DC/DC à très haute fréquence dans des convertisseurs pour systèmes photovoltaïques, stations de charge, UPS industriels et alimentations électriques télécom. Les diodes fonctionnent à des températures allant jusqu'à +175 °C et bénéficient d'une approbation UL. Des échantillons et des quantités de production sont disponibles avec un délai de livraison de 18 semaines.
Vishay Intertechnology (NYSE: VSH) hat 16 neue Schottky-Dioden aus Siliziumkarbid (SiC) mit 650 V und 1200 V im SOT-227-Gehäuse eingeführt. Die neuen Komponenten umfassen parallele Dual-Dioden-Geräte mit 40 A bis 240 A sowie Einphasenbrückengeräte mit 50 A und 90 A.
Die Dioden weisen einen niedrigen Ausgangsspannungsabfall von bis zu 1,36 V auf, wodurch die Verlustleistung verringert und die Effizienz erhöht wird. Sie sind mit einer dünnen Wafer-Technologie hergestellt und bieten verbesserte Rückwärtsrekoverierungsparameter im Vergleich zu Si-basierten Dioden, praktisch ohne Rekuperationsschwanz. Die niedrige kapazitive Ladung (QC) von bis zu 56 nC ermöglicht schnelles Schalten.
Wichtige Anwendungen umfassen AC/DC PFC und die DC/DC-Hochfrequenzausgangsrectifikation in Umrichtern für Photovoltaikanlagen, Ladestationen, industrielle USV und Telekom-Stromversorgungen. Die Dioden arbeiten bei Temperaturen von bis zu +175 °C und sind UL-zugelassen. Muster und Produktionsmengen sind mit einer Lieferzeit von 18 Wochen verfügbar.
- Introduction of 16 new high-performance SiC Schottky diodes
- Low forward voltage drop (1.36 V) reduces conduction losses
- High-temperature operation capability up to +175 °C
- Immediate availability of samples and production quantities
- 18-week lead time for production quantities
Insights
Vishay's launch of 16 new silicon carbide (SiC) Schottky diodes marks a strategic move in the high-growth power semiconductor market. The key technical specifications - forward voltage drop as low as 1.36V and capacitive charge down to 56 nC - position these components at the forefront of efficiency in power conversion applications.
The product line's significance lies in its targeting of critical growth markets:
- Electric vehicle charging infrastructure
- Photovoltaic systems
- Industrial UPS
- Telecom power supplies
The use of thin wafer technology and the industry-standard SOT-227 package offers dual advantages: superior thermal performance up to 175°C and drop-in replacement capability, reducing barriers to adoption. The high temperature operation and positive temperature coefficient enable parallel configuration, essential for scaling power systems.
The 18-week lead time indicates solid manufacturing capacity, though it's longer than typical silicon-based alternatives. This suggests potential supply chain optimization opportunities as SiC production scales. The broad range of current ratings (40A to 240A) allows Vishay to address diverse power requirements, strengthening their market position in the growing SiC power semiconductor segment.
This product launch strategically positions Vishay in the rapidly expanding SiC power semiconductor market, projected to reach $4.5 billion by 2027. The timing is particularly advantageous as industries accelerate their transition to more efficient power solutions.
The comprehensive product portfolio spanning 650V and 1200V ranges addresses key market segments:
- The EV charging infrastructure market, growing at 30% CAGR
- The industrial UPS segment, expanding due to data center proliferation
- The renewable energy sector, driven by global sustainability initiatives
Vishay's decision to maintain the industry-standard SOT-227 package while improving performance metrics shows strategic foresight in balancing innovation with practical adoption considerations. This approach could accelerate market penetration and potentially improve profit margins through premium pricing for superior performance.
The introduction of 16 new variants demonstrates Vishay's commitment to capturing market share in the SiC space, where they compete with established players like Infineon and STMicroelectronics. The broad product range and performance specifications suggest potential for revenue growth in high-margin industrial and automotive applications.
40 A to 240 A Dual-Diode and Single Phase Bridge Devices Offer Low Forward Voltage Drop Down to 1.36 V and QC Down to 56 nC
MALVERN, Pa., Jan. 29, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the industry-standard SOT-227 package. Designed to deliver high speed and efficiency for high frequency applications, the Vishay Semiconductors devices offer the best trade-off between capacitive charge (QC) and forward voltage drop for diodes in their class.
The devices released today consist of 40 A to 240 A dual diode components in a parallel configuration, and 50 A and 90 A single phase bridge devices. Built on state of the art thin wafer technology, the diodes feature a low forward voltage drop down to 1.36 V that dramatically reduces conduction losses for increased efficiency. Further increasing efficiency, the devices offer better reverse recovery parameters than Si-based diodes and have virtually no recovery tail.
Typical applications for the components will include AC/DC PFC and DC/DC ultra high frequency output rectification in FBPS and LLC converters for photovoltaic systems, charging stations, industrial UPS, and telecom power supplies. In these applications, the diodes’ low QC down to 56 nC allows for high speed switching, while their industry-standard package offers a drop-in replacement for competing solutions.
The diodes deliver high temperature operation to +175 °C and a positive temperature coefficient for easy parallelling. UL-approved to file E78996, the devices feature a large creepage distance between terminals and a simplified mechanical design for rapid assembly.
Device Specification Table:
| Part Number | VR (V) | IF(AV) (A) | VF at IF (V) | IFSM (A) | QC (nC) | Configuration |
| VS-SC40FA65 | 650 | 40 | 1.36 | 105 | 56¹ | Two separate diodes, parallel pin-out |
| VS-SC80FA65 | 80 | 1.36 | 225 | 110¹ | Two separate diodes, parallel pin-out | |
| VS-SC120FA65 | 120 | 1.39 | 340 | 164¹ | Two separate diodes, parallel pin-out | |
| VS-SC160FA65 | 160 | 1.38 | 450 | 220¹ | Two separate diodes, parallel pin-out | |
| VS-SC200FA65 | 200 | 1.39 | 555 | 275¹ | Two separate diodes, parallel pin-out | |
| VS-SC240FA65 | 240 | 1.40 | 675 | 328¹ | Two separate diodes, parallel pin-out | |
| VS-SC50BA65 | 50 | 1.50 | 267 | 110¹ | Single phase bridge | |
| VS-SC90BA65 | 90 | 1.61 | 340 | 164¹ | Single phase bridge | |
| VS-SC40FA120 | 1200 | 40 | 1.39 | 130 | 112² | Two separate diodes, parallel pin-out |
| VS-SC80FA120 | 80 | 1.4 | 260 | 224² | Two separate diodes, parallel pin-out | |
| VS-SC120FA120 | 120 | 1.42 | 385 | 333² | Two separate diodes, parallel pin-out | |
| VS-SC160FA120 | 160 | 1.44 | 500 | 444² | Two separate diodes, parallel pin-out | |
| VS-SC200FA120 | 200 | 1.45 | 620 | 553² | Two separate diodes, parallel pin-out | |
| VS-SC240FA120 | 240 | 1.45 | 690 | 651² | Two separate diodes, parallel pin-out | |
| VS-SC50BA120 | 50 | 1.5 | 328 | 223² | Single phase bridge | |
| VS-SC90BA120 | 90 | 1.9 | 500 | 332² | Single phase bridge |
¹VR = 400 V
²VR = 800 V
Samples and production quantities of the new SiC diodes are available now, with lead times of 18 weeks.
Vishay manufactures one of the world’s largest portfolios of discrete semiconductors and passive electronic components that are essential to innovative designs in the automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical markets. Serving customers worldwide, Vishay is The DNA of tech.® Vishay Intertechnology, Inc. is a Fortune 1,000 Company listed on the NYSE (VSH). More on Vishay at www.Vishay.com.
The DNA of tech® is a registered trademark of Vishay Intertechnology.
Vishay on Facebook: http://www.facebook.com/VishayIntertechnology
Vishay Twitter feed: http://twitter.com/vishayindust
Link to product datasheets:
https://www.vishay.com/search/?searchChoice=part&query=VS-SC
Link to product photo:
https://www.flickr.com/photos/vishay/albums/72177720323376025
For more information please contact:
Vishay Intertechnology
Peter Henrici, +1 408 567-8400
peter.henrici@vishay.com
or
Redpines
Bob Decker, +1 415 409-0233
bob.decker@redpinesgroup.com
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