Vishay Intertechnology 200 V N-Channel MOSFET in PowerPAK® 1212-8S Offers Industry-Low RDS(ON) to Increase Power Density, Save Energy
Vishay Intertechnology (NYSE: VSH) has launched a new 200 V n-channel MOSFET, the SiSS94DN, featuring a low on-resistance of 61 mΩ at 10 V. The device is significantly smaller, being 65% smaller than comparable MOSFETs in a 6 mm by 5 mm package. Its improved figure of merit (FOM) enhances power density and reduces energy loss, making it suitable for various applications including telecom equipment and consumer electronics. Samples and production quantities are available now, with a 12-week lead time.
- Launch of new SiSS94DN MOSFET with 61 mΩ on-resistance, enhancing efficiency.
- 65% smaller than similar devices, allowing space-saving designs.
- Improved FOM leads to reduced conduction and switching losses.
- None.
MALVERN, Pa., Sept. 23, 2020 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new 200 V n-channel MOSFET that offers industry-low typical on-resistance of 61 mΩ at 10 V in the 3.3 mm by 3.3 mm thermally enhanced PowerPAK® 1212-8S package, in addition to improved on-resistance times gate charge — a critical figure of merit (FOM) for MOSFETs used in switching applications — of 854 mΩ*nC. Purpose-built to increase power density, the space-saving Vishay Siliconix SiSS94DN is 65 % smaller than devices with similar on-resistance in 6 mm by 5 mm packages.
The typical on-resistance of the TrenchFET® Gen IV power MOSFET released today is 20 % lower than the next best product on the market in a similar package size, and its FOM is 17 % lower than the previous-generation solution. These values result in reduced conduction and switching losses to save energy. With its compact size, the flexible device allows designers to save PCB space by replacing a much larger MOSFET with the same conduction losses, or a similar sized MOSFET with higher conduction losses.
The SiSS94DN is ideal for primary-side switching for isolated DC/DC topologies and synchronous rectification in telecom equipment, computer peripherals, and consumer electronics; LED backlighting for notebooks, LED TVs, vehicles, and vessels; and motor drive control, load switching, and power conversion for GPS, factory automation, and industrial applications.
The device is 100 % RG- and UIS-tested, RoHS-compliant, and halogen-free.
Samples and production quantities of the SiSS94DN are available now, with lead times of 12 weeks.
Vishay manufactures one of the world’s largest portfolios of discrete semiconductors and passive electronic components that are essential to innovative designs in the automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical markets. Serving customers worldwide, Vishay is The DNA of tech.™ Vishay Intertechnology, Inc. is a Fortune 1,000 Company listed on the NYSE (VSH). More on Vishay at www.Vishay.com.
The DNA of tech™ is a trademark of Vishay Intertechnology. PowerPAK and TrenchFET are registered trademarks of Siliconix incorporated.
Vishay on Facebook: http://www.facebook.com/VishayIntertechnology
Vishay Twitter feed: http://twitter.com/vishayindust
Links to product datasheets:
http://www.vishay.com/ppg?77350 (SiSS94DN)
Link to product photo:
https://www.flickr.com/photos/vishay/albums/72157715892247166
For more information please contact:
Vishay Intertechnology
Peter Henrici, +1 408 567-8400
peter.henrici@vishay.com
or
Redpines
Bob Decker, +1 415 409-0233
bob.decker@redpinesgroup.com
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