Vishay Intertechnology Gen 4.5 650 V E Series Power MOSFET Delivers Industry’s Lowest RDS(ON)*Qg and RDS(ON)*Co(er) FOMs
Vishay Intertechnology (NYSE: VSH) has unveiled its new Gen 4.5 650 V E Series power MOSFET, the SiHK050N65E, designed for high-efficiency power applications. The device achieves a 48.2% reduction in on-resistance and a 65.4% lower resistance times gate charge compared to previous generations.
The MOSFET features a low typical on-resistance of 0.048 Ω at 10 V, enabling power ratings above 6 kW. Key specifications include ultra-low gate charge down to 78 nC and industry-leading effective output capacitances. The device targets applications including:
- Servers and edge computing
- Telecom SMPS
- Solar inverters
- Battery chargers
- UPS systems
The SiHK050N65E, available in the PowerPAK 10 x 12 package with Kelvin connection, is designed to meet titanium efficiency requirements in server power supplies and achieve 96% peak efficiency.
Vishay Intertechnology (NYSE: VSH) ha presentato il suo nuovo MOSFET di potenza Gen 4.5 E Series da 650 V, il SiHK050N65E, progettato per applicazioni di potenza ad alta efficienza. Il dispositivo raggiunge una riduzione del 48,2% della resistenza on e una riduzione del 65,4% della resistenza moltiplicata per la carica del gate rispetto alle generazioni precedenti.
Il MOSFET presenta una resistenza on tipica bassa di 0,048 Ω a 10 V, consentendo potenze superiori a 6 kW. Le specifiche chiave includono una carica del gate ultra-bassa fino a 78 nC e capacità di uscita efficace leader nel settore. Il dispositivo è destinato a applicazioni che includono:
- Server e computing edge
- SMPS telecom
- Inverter solari
- Caricabatterie
- Sistemi UPS
Il SiHK050N65E, disponibile nel pacchetto PowerPAK 10 x 12 con connessione Kelvin, è progettato per soddisfare i requisiti di efficienza in titanio nelle alimentazioni per server e raggiungere un'efficienza massima del 96%.
Vishay Intertechnology (NYSE: VSH) ha presentado su nuevo MOSFET de potencia Gen 4.5 de 650 V, el SiHK050N65E, diseñado para aplicaciones de potencia de alta eficiencia. El dispositivo logra una reducción del 48,2% en la resistencia on y una reducción del 65,4% en la resistencia multiplicada por la carga del gate en comparación con generaciones anteriores.
El MOSFET cuenta con una resistencia on típica baja de 0,048 Ω a 10 V, permitiendo potencias superiores a 6 kW. Las especificaciones clave incluyen una carga de gate ultra-baja de hasta 78 nC y capacitancias de salida efectivas líderes en la industria. El dispositivo está destinado a aplicaciones que incluyen:
- Servidores y computación en el borde
- SMPS de telecomunicaciones
- Inversores solares
- Cargadores de batería
- Sistemas UPS
El SiHK050N65E, disponible en el paquete PowerPAK de 10 x 12 con conexión Kelvin, está diseñado para cumplir con los requisitos de eficiencia de titanio en las fuentes de alimentación de servidores y alcanzar una eficiencia máxima del 96%.
비샤이 인터테크놀로지 (NYSE: VSH)는 고효율 전력 애플리케이션을 위해 설계된 650 V E 시리즈 파워 MOSFET인 SiHK050N65E를 발표했습니다. 이 장치는 이전 세대에 비해 온 저항을 48.2% 감소시키고 게이트 전하에 대한 저항을 65.4% 낮추는 성능을 달성합니다.
이 MOSFET는 10 V에서 0.048 Ω의 낮은 전형적인 온 저항을 제공하여 6 kW 이상의 전력 등급을 가능하게 합니다. 주요 사양에는 78 nC까지의 초저전하 게이트와 업계 최고의 유효 출력 용량이 포함됩니다. 이 장치는 다음과 같은 응용 프로그램을 목표로 하고 있습니다:
- 서버 및 엣지 컴퓨팅
- 통신 SMPS
- 태양광 인버터
- 배터리 충전기
- UPS 시스템
SiHK050N65E는 켈빈 연결이 있는 PowerPAK 10 x 12 패키지로 제공되며, 서버 전원 공급 장치의 티타늄 효율성 요구 사항을 충족하고 96%의 최대 효율을 달성하도록 설계되었습니다.
Vishay Intertechnology (NYSE: VSH) a dévoilé son nouveau MOSFET de puissance Gen 4.5 de 650 V, le SiHK050N65E, conçu pour des applications de puissance à haute efficacité. Le dispositif atteint une réduction de 48,2% de la résistance on et une réduction de 65,4% de la résistance multipliée par la charge de grille par rapport aux générations précédentes.
Le MOSFET présente une résistance on typique basse de 0,048 Ω à 10 V, permettant des puissances supérieures à 6 kW. Les spécifications clés incluent une charge de grille ultra-basse allant jusqu'à 78 nC et des capacités de sortie effectives parmi les meilleures du secteur. Le dispositif cible des applications comprenant:
- Serveurs et informatique de périphérie
- SMPS de télécommunications
- Inverseurs solaires
- Chargeurs de batterie
- Systèmes UPS
Le SiHK050N65E, disponible dans le boîtier PowerPAK 10 x 12 avec connexion Kelvin, est conçu pour répondre aux exigences d'efficacité en titane dans les alimentations de serveurs et atteindre une efficacité maximale de 96%.
Vishay Intertechnology (NYSE: VSH) hat seinen neuen Gen 4.5 650 V E Series Leistungsmosfet, den SiHK050N65E, vorgestellt, der für hocheffiziente Leistungsanwendungen konzipiert ist. Das Gerät erreicht eine Reduzierung des On-Widerstands um 48,2% und einen 65,4% niedrigeren Widerstand mal Gate-Ladung im Vergleich zu früheren Generationen.
Der MOSFET weist einen typischen On-Widerstand von 0,048 Ω bei 10 V auf, was Leistungen über 6 kW ermöglicht. Zu den wichtigsten Spezifikationen gehören eine ultra-niedrige Gate-Ladung von bis zu 78 nC und branchenführende effektive Ausgangskapazitäten. Das Gerät richtet sich an Anwendungen wie:
- Server und Edge-Computing
- Telekom-SMPS
- Solarwechselrichter
- Batterieladegeräte
- USV-Systeme
Der SiHK050N65E, erhältlich im PowerPAK 10 x 12 Gehäuse mit Kelvin-Anschluss, wurde entwickelt, um die Anforderungen an die Titan-Effizienz in Serverstromversorgungen zu erfüllen und eine Spitzenwirkungsgrad von 96% zu erreichen.
- 48.2% reduction in on-resistance improves power efficiency
- Industry-leading performance metrics for power conversion
- Supports high power applications above 6 kW
- Achieves 96% peak efficiency in server power supplies
- Addresses growing data center and computing power needs
- None.
Insights
Vishay's new Gen 4.5 650V MOSFET represents a significant technical advancement in the company's power semiconductor portfolio. The 48.2% reduction in on-resistance and 65.4% lower resistance times gate charge directly translate to improved efficiency in power-intensive applications exceeding 6kW.
What's strategically important is how this product targets high-growth segments including data centers, edge computing, and renewable energy infrastructure. The device's compatibility with Open Rack V3 standards positions Vishay to capitalize on hyperscale data center deployments where energy efficiency requirements are increasingly stringent.
The technical specifications—particularly the industry-leading figures of merit—provide Vishay competitive differentiation in high-margin segments of the power semiconductor market. This aligns with industry trends toward higher power density and efficiency in critical infrastructure.
While this release strengthens Vishay's competitive positioning in the power semiconductor space, investors should view this as an incremental product advancement rather than a transformative release. The product enhances Vishay's ability to compete in the growing high-efficiency power management segment, though quantifiable revenue impact remains to be seen.
Superjunction Device Enables High Power Ratings and Density While Lowering Conduction and Switching Losses to Increase Efficiency
MALVERN, Pa., March 26, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new Gen 4.5 650 V E Series power MOSFET that delivers high efficiency and power density for telecom, industrial, and computing applications. Compared to previous-generation devices, the Vishay Siliconix n-channel SiHK050N65E slashes on-resistance by 48.2 % while offering a 65.4 % lower resistance times gate charge, a key figure of merit (FOM) for 650 V MOSFETs used in power conversion applications.
Vishay offers a broad line of MOSFET technologies that support all stages of the power conversion process, from high voltage inputs to the low voltage outputs required to power the latest high tech equipment. With the SiHK050N65E and other devices in the Gen 4.5 650 V E Series family, the company is addressing the need for efficiency and power density improvements in two of the first stages of the power system architecture — power factor correction (PFC) and subsequent DC/DC converter blocks. Typical applications will include servers, edge computing, and super computers; UPS; high intensity discharge (HID) lamps and fluorescent ballast lighting; telecom SMPS; solar inverters; welding equipment; induction heating; motor drives; and battery chargers.
Built on Vishay’s latest energy-efficient E Series superjunction technology, the SiHK050N65E’s low typical on-resistance of 0.048 Ω at 10 V results in a higher power rating for applications > 6 kW. With 50 V of additional breakdown voltage, the 650 V device addresses 200 VAC to 277 VAC input voltages and the Open Compute Project’s Open Rack V3 (ORV3) standards. In addition, the MOSFET offers ultra low gate charge down to 78 nC. The resulting FOM of 3.74 Ω*nC translates into reduced conduction and switching losses to save energy and increase efficiency. This allows the device to address the specific titanium efficiency requirements in server power supplies or reach 96 % peak efficiency.
For improved switching performance in hard-switched topologies such as PFC and two-switch forward designs, the MOSFET released today provides low typical effective output capacitances Co(er) and Co(tr) of 167 pF and 1119 pF, respectively. The device’s resulting resistance times Co(er) FOM is an industry-low 8.0 Ω*pF. The SiHK050N65E is offered in the PowerPAK® 10 x 12 package with a Kelvin connection for reduced gate noise and provides increased dv/dt ruggedness. RoHS-compliant and halogen-free, the MOSFET is designed to withstand overvoltage transients in avalanche mode with guaranteed limits through 100 % UIS testing.
Samples and production quantities of the SiHK050N65E are available now. For lead time information, please contact your local sales office.
Vishay manufactures one of the world’s largest portfolios of discrete semiconductors and passive electronic components that are essential to innovative designs in the automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical markets. Serving customers worldwide, Vishay is The DNA of tech.® Vishay Intertechnology, Inc. is a Fortune 1,000 Company listed on the NYSE (VSH). More on Vishay at www.Vishay.com.
The DNA of tech® is a registered trademark of Vishay Intertechnology, Inc. PowerPAK is a registered trademark of Siliconix incorporated.
Vishay on Facebook: http://www.facebook.com/VishayIntertechnology
Vishay Twitter feed: http://twitter.com/vishayindust
Link to product datasheet:
http://www.vishay.com/ppg?92559 (SiHK050N65E)
Link to product photo:
https://www.flickr.com/photos/vishay/albums/72177720324565106
For more information please contact:
Vishay Intertechnology
Peter Henrici, +1 408 567-8400
peter.henrici@vishay.com
or
Redpines
Bob Decker, +1 415 409-0233
bob.decker@redpinesgroup.com
FAQ
What are the key performance improvements of Vishay's new SiHK050N65E MOSFET?
What applications is VSH targeting with the new Gen 4.5 650 V E Series MOSFET?
What efficiency level can the new VSH MOSFET achieve in server power supplies?
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