New Vishay Intertechnology Gen 3 1200 V SiC Schottky Diodes Increase Efficiency and Reliability for Switching Power Designs

Rhea-AI Summary

Vishay Intertechnology has launched 16 new Gen 3 1200 V silicon carbide (SiC) Schottky diodes, featuring a merged PIN Schottky design. These diodes offer enhanced efficiency and reliability for switching power designs, due to their low forward voltage drop, capacitive charge, and reverse leakage current. The new diodes come in a variety of packages and range from 5 A to 40 A.

The diodes boast low capacitance charge down to 28 nC and a typical forward voltage drop of 1.35 V. They also feature low reverse leakage current down to 2.5 µA at 25 °C, enhancing system efficiency. The Gen 3 diodes are suitable for applications like solar power inverters, energy storage systems, industrial drives, and datacenters. They can operate at temperatures up to +175 °C and have forward surge ratings up to 260 A, ensuring high robustness in harsh environments. These RoHS-compliant and halogen-free devices have passed rigorous reliability tests, including 2000 hours of higher temperature reverse bias and 2000 thermal cycles.

Positive

• Launch of 16 new Gen 3 1200 V SiC Schottky diodes improves efficiency and reliability.
• Devices feature low forward voltage drop of 1.35 V, enhancing system efficiency.
• Low typical reverse leakage current down to 2.5 µA at 25 °C.
• Suitable for high-demand applications like solar power inverters and energy storage systems.
• High robustness with forward surge ratings up to 260 A.
• Passed rigorous reliability tests including 2000 hours of HTRB.

Negative

• None.

Insights

Tech Expert

Vishay Intertechnology's introduction of new Gen 3 1200 V SiC Schottky diodes marks a significant innovation in power electronics, particularly in applications needing high efficiency and reliability. The silicon carbide (SiC) technology inherently allows for better performance, especially under tough conditions, compared to traditional silicon-based diodes. These diodes feature lower forward voltage drop and lower reverse leakage current, factors which directly reduce energy losses and improve overall system efficiency.

The MPS design (Merged PIN Schottky), which merges the performance benefits of both PIN diodes and Schottky diodes, provides enhanced surge current robustness, essential for applications like solar inverters and industrial drives. This innovation helps in reducing the thermal stress and enhancing the longevity of the components under high load conditions.

From a technical standpoint, the diodes boasting low capacitance charge down to 28 nC and no recovery tail indicate they are designed to operate effectively in high-frequency switching applications. This feature is particularly beneficial for datacenters and energy storage systems, which demand high efficiency to manage operational costs and thermal management issues.

Market Research Analyst

Vishay's launch of these new SiC Schottky diodes comes at a pivotal moment when industries are shifting towards more efficient and sustainable technologies. The focus on reducing conduction losses and improving system efficiency aligns well with the growing demand for green energy solutions and high-efficiency electronics in sectors like solar power and industrial automation.

For retail investors, it's important to recognize that Vishay is targeting high-growth markets. Applications in AC/DC PFC and DC/DC converters for solar inverters and energy storage systems, as well as industrial tools, are all sectors expected to see substantial growth due to the global push towards sustainability and energy efficiency.

However, investors should be aware of the 13-week lead time for production quantities. This could potentially delay integration into new products and impact revenue timelines in the short term. Long-term, the robustness and efficiency of these components could make them a preferred choice, positioning Vishay to capture a larger market share in these expanding sectors.

Featuring an MPS Design, 5 A to 40 A Devices Offer Lower Forward Voltage Drop, Capacitive Charge, and Reverse Leakage Current

MALVERN, Pa., June 26, 2024 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced 16 new Gen 3 1200 V silicon carbide (SiC) Schottky diodes. Featuring a merged PIN Schottky (MPS) design, the Vishay Semiconductors devices combine high surge current robustness with low forward voltage drop, capacitive charge, and reverse leakage current to increase efficiency and reliability in switching power designs.

The next-generation SiC diodes released today consist of 5 A to 40 A devices in the TO-220AC 2L, TO-247AD 2L, and TO-247AD 3L through-hole and D²PAK 2L (TO-263AB 2L) surface-mount packages. The diodes offer a low capacitance charge down to 28 nC, while their MPS structure — which features a backside thinned via laser annealing technology — delivers a reduced forward voltage drop of 1.35 V. In addition, the devices’ low typical reverse leakage current down to 2.5 µA at 25 °C reduces conduction losses, ensuring high system efficiency during light loads and idling. Unlike ultrafast diodes, the Gen 3 devices have virtually no recovery tail, which further improves efficiency.

Typical applications for the diodes will include AC/DC PFC and DC/DC ultra high frequency output rectification in FBPS and LLC converters for solar power inverters; energy storage systems; industrial drives and tools; and datacenters. For the harsh environments of these applications, the devices combine operating temperatures to +175 °C with forward surge ratings to 260 A for high robustness. In addition, diodes in the D²PAK 2L package feature a molding compound with a high CTI 600, ensuring excellent electrical insulation at elevated voltages.

Offering high reliability, the RoHS-compliant and halogen-free devices have passed higher temperature reverse bias (HTRB) testing of 2000 hours and temperature cycling testing of 2000 thermal cycles.

Device Specification Table:

Part #	IF(AV) (A)	IFSM (A)	VF at IF (V)	QC (nC)	Configuration	Package
VS-3C05ET12T-M3	5	42	1.35	28	Single	TO-220AC 2L
VS-3C10ET12T-M3	10	84	1.35	55	Single	TO-220AC 2L
VS-3C15ET12T-M3	15	110	1.35	81	Single	TO-220AC 2L
VS-3C20ET12T-M3	20	180	1.35	107	Single	TO-220AC 2L
VS-3C05ET12S2L-M3	5	42	1.35	28	Single	D²PAK 2L
VS-3C10ET12S2L-M3	10	84	1.35	55	Single	D²PAK 2L
VS-3C15ET12S2L-M3	15	110	1.35	81	Single	D²PAK 2L
VS-3C20ET12S2L-M3	20	180	1.35	107	Single	D²PAK 2L
VS-3C10EP12L-M3	10	84	1.35	55	Single	TO-247AD 2L
VS-3C15EP12L-M3	15	110	1.35	81	Single	TO-247AD 2L
VS-3C20EP12L-M3	20	180	1.35	107	Single	TO-247AD 2L
VS-3C30EP12L-M3	30	260	1.35	182	Single	TO-247AD 2L
VS-3C10CP12L-M3	2 x 5	42	1.35	28	Common cathode	TO-247AD 3L
VS-3C20CP12L-M3	2 x 10	84	1.35	55	Common cathode	TO-247AD 3L
VS-3C30CP12L-M3	2 x 15	110	1.35	81	Common cathode	TO-247AD 3L
VS-3C40CP12L-M3	2 x 20	180	1.35	107	Common cathode	TO-247AD 3L

Samples and production quantities of the new SiC diodes are available now, with lead times of 13 weeks.

Vishay manufactures one of the world’s largest portfolios of discrete semiconductors and passive electronic components that are essential to innovative designs in the automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical markets. Serving customers worldwide, Vishay is The DNA of tech.^® Vishay Intertechnology, Inc. is a Fortune 1,000 Company listed on the NYSE (VSH). More on Vishay at www.Vishay.com.

The DNA of tech^® is a registered trademark of Vishay Intertechnology.

Vishay on Facebook: http://www.facebook.com/VishayIntertechnology
Vishay Twitter feed: http://twitter.com/vishayindust

Links to product datasheets:
https://www.vishay.com/search/?searchChoice=part&query=VS-3C

Link to product photo:
https://www.flickr.com/photos/vishay/albums/72177720318189327

For more information please contact:
Vishay Intertechnology
Peter Henrici, +1 408 567-8400
peter.henrici@vishay.com
or
Redpines
Bob Decker, +1 415 409-0233
bob.decker@redpinesgroup.com

FAQ

What new products did Vishay Intertechnology announce on June 26, 2024?

Vishay announced 16 new Gen 3 1200 V silicon carbide (SiC) Schottky diodes.

What are the benefits of Vishay's new Gen 3 1200 V SiC Schottky diodes?

The new diodes offer lower forward voltage drop, capacitive charge, and reverse leakage current, enhancing efficiency and reliability.

What applications are suitable for Vishay's new Gen 3 1200 V SiC Schottky diodes?

They are suitable for AC/DC PFC, DC/DC ultra high-frequency output rectification in FBPS and converters for solar power inverters, energy storage systems, industrial drives, and datacenters.

What is the forward voltage drop of Vishay's new Gen 3 1200 V SiC Schottky diodes?

The diodes have a typical forward voltage drop of 1.35 V.

What is the package availability for Vishay's new Gen 3 1200 V SiC Schottky diodes?

They are available in TO-220AC 2L, TO-247AD 2L, TO-247AD 3L through-hole, and D²PAK 2L (TO-263AB 2L) surface-mount packages.

What is the operating temperature range for Vishay's new Gen 3 1200 V SiC Schottky diodes?

The diodes can operate at temperatures up to +175 °C.

What are the forward surge ratings of Vishay's new Gen 3 1200 V SiC Schottky diodes?

The diodes have forward surge ratings up to 260 A.

How have Vishay's new Gen 3 1200 V SiC Schottky diodes performed in reliability testing?

The diodes have passed higher temperature reverse bias testing of 2000 hours and temperature cycling testing of 2000 thermal cycles.