Texas Instruments expands internal manufacturing for gallium nitride (GaN) semiconductors, quadrupling capacity
Texas Instruments (TXN) has started production of gallium nitride (GaN) power semiconductors at its Aizu, Japan factory, quadrupling its internal GaN manufacturing capacity alongside its Dallas facility. The company has qualified its 200mm GaN technology for mass production, advancing towards its goal of manufacturing more than 95% of chips internally by 2030. TI offers the industry's widest portfolio of integrated GaN-based power semiconductors, which provide superior power density and energy efficiency for applications like laptop adapters and HVAC systems. The company has also successfully piloted GaN manufacturing on 300mm wafers, positioning itself for future scaling.
Texas Instruments (TXN) ha avviato la produzione di semiconduttori di potenza al nitruro di gallio (GaN) nella sua fabbrica di Aizu, in Giappone, quadruplicando la sua capacità interna di produzione di GaN insieme alla sua struttura di Dallas. L'azienda ha qualificato la sua tecnologia GaN da 200 mm per la produzione di massa, avanzando verso l'obiettivo di produrre oltre il 95% dei chip internamente entro il 2030. TI offre il portafoglio più ampio del settore di semiconduttori di potenza basati su GaN, che forniscono una densità di potenza e un'efficienza energetica superiori per applicazioni come adattatori per laptop e sistemi HVAC. L'azienda ha anche pilotato con successo la produzione di GaN su wafer da 300 mm, posizionandosi per una futura scalabilità.
Texas Instruments (TXN) ha comenzado la producción de semiconductores de potencia de nitruro de galio (GaN) en su fábrica de Aizu, Japón, cuadruplicando su capacidad interna de fabricación de GaN junto a su planta de Dallas. La compañía ha calificado su tecnología GaN de 200 mm para producción en masa, avanzando hacia su meta de fabricar más del 95% de los chips internamente para 2030. TI ofrece el portafolio más amplio de la industria de semiconductores de potencia basados en GaN, que proporcionan una densidad de potencia y eficiencia energética superiores para aplicaciones como adaptadores de laptop y sistemas HVAC. La compañía también ha pilotado con éxito la fabricación de GaN en obleas de 300 mm, posicionándose para una escalabilidad futura.
텍사스 인스트루먼트(TXN)가 일본 아이즈 공장에서 질화 갈륨(GaN) 전력 반도체의 생산을 시작하여, 달라스 시설과 함께 내부 GaN 제조 능력을 4배로 늘렸습니다. 이 회사는 200mm GaN 기술을 대량 생산을 위해 인증받았으며, 2030년까지 95% 이상의 칩을 내부에서 제조하는 목표를 향해 나아가고 있습니다. TI는 산업에서 가장 폭넓은 GaN 기반 전력 반도체 포트폴리오를 제공하여 노트북 어댑터 및 HVAC 시스템과 같은 응용 분야에서 우수한 전력 밀도와 에너지 효율성을 제공합니다. 또한, 회사는 300mm 웨이퍼에서 GaN 제조를 성공적으로 시범 운영하여 미래 확장을 위한 위치를 마련했습니다.
Texas Instruments (TXN) a commencé la production de semi-conducteurs de puissance en nitrure de gallium (GaN) dans son usine d'Aizu, au Japon, quadruplant ainsi sa capacité de fabrication interne de GaN en parallèle avec son site de Dallas. L'entreprise a qualifié sa technologie GaN de 200 mm pour la production de masse, avançant vers son objectif de fabriquer plus de 95 % des puces en interne d'ici 2030. TI propose le portefeuille le plus large de l'industrie de semi-conducteurs de puissance à base de GaN, offrant une densité de puissance et une efficacité énergétique supérieures pour des applications telles que les adaptateurs pour ordinateurs portables et les systèmes CVC. L'entreprise a également réussi à piloter la fabrication de GaN sur des wafers de 300 mm, se positionnant pour une évolutivité future.
Texas Instruments (TXN) hat mit der Produktion von Gallium-Nitrid (GaN) Leistungshalbleitern in seiner Fabrik in Aizu, Japan, begonnen und damit seine interne GaN-Produktionskapazität zusammen mit seinem Werk in Dallas vervierfacht. Das Unternehmen hat seine 200-mm-GaN-Technologie für die Massenproduktion qualifiziert und arbeitet darauf hin, bis 2030 mehr als 95 % der Chips intern herzustellen. TI bietet das breiteste Portfolio integriert GaN-basierter Leistungshalbleiter in der Branche, die eine überlegene Leistungsdichte und Energieeffizienz für Anwendungen wie Laptop-Netzteile und HVAC-Systeme bieten. Das Unternehmen hat außerdem erfolgreich die GaN-Produktion auf 300-mm-Wafer getestet und sich damit für eine zukünftige Skalierung positioniert.
- Quadrupling of GaN manufacturing capacity through Japan facility expansion
- Successfully qualified 200mm GaN technology for mass production
- Progress toward 95% internal manufacturing goal by 2030
- Successful pilot of 300mm wafer GaN manufacturing process
- Demonstrated reliability with over 80 million hours of testing
- None.
Insights
This expansion marks a significant strategic move in TI's semiconductor manufacturing capabilities. The quadrupling of GaN production capacity through the Aizu facility demonstrates TI's commitment to capturing the growing
The internal manufacturing approach, aiming for
The expansion into high-voltage GaN production up to 900V and beyond strategically positions TI in the rapidly growing clean energy sector. This technology is important for next-generation power electronics in
- Electric vehicle charging infrastructure
- Solar power inverters
- Data center power supplies
- Industrial motor drives
NEWS HIGHLIGHTS:
- TI adds GaN manufacturing in
Japan , quadrupling its internal GaN manufacturing capacity between its factories inthe United States andJapan . - TI's GaN-based semiconductors are in production and available now.
- TI enables the most energy-efficient, reliable and power-dense end products with the widest portfolio of integrated GaN-based power semiconductors.
- TI has successfully piloted the development of GaN manufacturing on 300mm wafers.
"Building on more than a decade of expertise in GaN chip design and manufacturing, we have successfully qualified our 200mm GaN technology – the most scalable and cost-competitive way to manufacture GaN today – to start mass production in Aizu," said Mohammad Yunus, TI's senior vice president of Technology and Manufacturing. "This milestone enables us to manufacture more of our GaN chips internally as we grow our internal manufacturing to more than
The power of GaN technology
An alternative to silicon, GaN is a semiconductor material that offers benefits in energy-efficiency, switching speed, power solution size and weight, overall system cost, and performance under high temperatures and high-voltage conditions. GaN chips provide more power density, or power in smaller spaces, enabling applications such as power adapters for laptops and mobile phones, or smaller, more energy-efficient motors for heating and air conditioning systems and home appliances.
Today, TI offers the widest portfolio of integrated GaN-based power semiconductors, ranging from low- to high-voltage, to enable the most energy-efficient, reliable and power-dense electronics.
"With GaN, TI can deliver more power, more efficiently in a compact space, which is the primary market need driving innovation for many of our customers," said Kannan Soundarapandian, vice president of High-Voltage Power at TI. "As designers of systems such as server power, solar energy generation and AC/DC adapters face challenges to reduce power consumption and enhance energy efficiency, they are increasingly demanding a reliable supply of TI's high-performance GaN-based chips. TI's product portfolio of integrated GaN power stages enables customers to achieve higher power density, improved ease of use and lower system cost."
Further, with the company's proprietary GaN-on-silicon process, more than 80 million hours of reliability testing, and integrated protection features, TI GaN chips are designed to keep high-voltage systems safe.
Most advanced GaN manufacturing technology available today
Using the most advanced equipment available for GaN chip manufacturing today, TI's new capacity enables increased product performance and manufacturing process efficiency, as well as a cost advantage.
Also, the more advanced, efficient tools used in TI's expanded GaN manufacturing can produce smaller chips, packing even more power. This design innovation can be manufactured using less water, energy and raw materials, and end products that use GaN chips enjoy these same environmental benefits.
Scaled for future advances
The performance benefits of TI's added GaN manufacturing also enable the company to scale its GaN chips to higher voltages, starting with 900V and increasing to higher voltages over time, furthering power-efficiency and size innovations for applications like robotics, renewable energy and server power supplies.
In addition, TI's expanded investment includes a successful pilot earlier this year for development of GaN manufacturing processes on 300mm wafers. Further, TI's expanded GaN manufacturing processes are fully transferable to 300mm technology, positioning the company to readily scale to customer needs and move to 300mm in the future.
Committed to responsible, sustainable manufacturing
Expanding supply and innovation in GaN technology is the latest example of TI's commitment to responsible, sustainable manufacturing. TI has committed to use
Learn more about GaN and TI manufacturing:
About Texas Instruments
Texas Instruments Incorporated (Nasdaq: TXN) is a global semiconductor company that designs, manufactures and sells analog and embedded processing chips for markets such as industrial, automotive, personal electronics, communications equipment and enterprise systems. At our core, we have a passion to create a better world by making electronics more affordable through semiconductors. This passion is alive today as each generation of innovation builds upon the last to make our technology more reliable, more affordable and lower power, making it possible for semiconductors to go into electronics everywhere. Learn more at TI.com.
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SOURCE Texas Instruments
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