Navitas Powers AI and EVs with Gen-3 ‘Fast’ SiC in Robust TOLL Package
Navitas Semiconductor (Nasdaq: NVTS) has introduced its 3rd generation 650 V 'fast' silicon carbide (SiC) MOSFETs in a robust TOLL package. These Gen-3 'Fast' (G3F) SiC MOSFETs are designed for high-power, high-reliability applications such as AI data centers, EV charging, and energy storage solutions. Key features include:
- Best-in-class low on-resistance of 20 to 55 mΩ
- Optimized for fastest switching speed and highest efficiency
- Up to 25°C lower case temperatures and up to 3x longer life than alternatives
- 9% reduction in junction-to-case thermal resistance
- 30% smaller PCB footprint and 60% smaller size than D2PAK-7L
Navitas' 4.5 kW AI power system reference design, featuring the G3F SiC MOSFET, achieves a peak efficiency above 97% and a power density of 137 W/inch³, making it the world's highest power density AI PSU.
Navitas Semiconductor (Nasdaq: NVTS) ha introdotto i suoi MOSFET in carburo di silicio (SiC) di terza generazione da 650 V 'veloci' in un robusto pacchetto TOLL. Questi SiC MOSFET 'Fast' di Gen-3 (G3F) sono progettati per applicazioni ad alta potenza e alta affidabilità, come data center AI, ricarica per veicoli elettrici e soluzioni di stoccaggio energetico. Le caratteristiche principali includono:
- Resistenza on veramente bassa da 20 a 55 mΩ
- Ottimizzati per la velocità di commutazione più rapida e la massima efficienza
- Fino a 25°C di temperatura del case inferiore e fino a 3 volte la durata rispetto alle alternative
- Riduzione del 9% della resistenza termica giunzione-case
- Superficie del PCB più piccola del 30% e dimensioni più piccole del 60% rispetto al D2PAK-7L
Il sistema di alimentazione AI da 4,5 kW di Navitas, con il MOSFET G3F, raggiunge un'efficienza di picco superiore al 97% e una densità di potenza di 137 W/inch³, rendendolo il PSU AI con la densità di potenza più alta al mondo.
Navitas Semiconductor (Nasdaq: NVTS) ha presentado sus MOSFET de carburo de silicio (SiC) de tercera generación de 650 V 'rápidos' en un robusto paquete TOLL. Estos MOSFET SiC 'Fast' de Gen-3 (G3F) están diseñados para aplicaciones de alta potencia y alta fiabilidad, como centros de datos de IA, carga de vehículos eléctricos y soluciones de almacenamiento de energía. Las características clave incluyen:
- La mejor resistencia on en su clase, de 20 a 55 mΩ
- Optimizados para la velocidad de conmutación más rápida y la máxima eficiencia
- Hasta 25 °C menos en temperaturas del case y hasta 3 veces más de vida útil que las alternativas
- Reducción del 9% en la resistencia térmica de unión a case
- Huella de PCB un 30% más pequeña y un tamaño un 60% más pequeño en comparación con el D2PAK-7L
El diseño de referencia del sistema de energía AI de 4,5 kW de Navitas, que presenta el MOSFET G3F, logra una eficiencia máxima superior al 97% y una densidad de potencia de 137 W/inch³, convirtiéndose así en la PSU de IA con la mayor densidad de potencia del mundo.
Navitas 반도체(Nasdaq: NVTS)는 650 V '빠른' 실리콘 카바이드(SiC) MOSFET의 3세대 모델을 견고한 TOLL 패키지로 출시했습니다. 이 3세대 'Fast' (G3F) SiC MOSFET는 AI 데이터 센터, 전기차 충전, 에너지 저장 솔루션과 같은 고출력 및 고신뢰성 애플리케이션을 위해 설계되었습니다. 주요 특징은 다음과 같습니다:
- 20~55 mΩ의 업계 최고 수준의 낮은 온 저항
- 가장 빠른 스위칭 속도와 최고의 효율성 최적화
- 케이스 온도 최대 25°C 낮음 및 대체품보다 최대 3배 긴 수명
- 접합-케이스 열 저항 9% 감소
- D2PAK-7L보다 PCB 면적 30% 작고 크기 60% 작음
Navitas의 4.5 kW AI 전원 시스템 참조 설계는 G3F SiC MOSFET을 특징으로 하며 97% 이상의 피크 효율성과 137 W/inch³의 전력 밀도를 달성하여 세계에서 가장 높은 전력 밀도의 AI PSU가 됩니다.
Navitas Semiconductor (Nasdaq: NVTS) a introduit ses MOSFET en carbure de silicium (SiC) de troisième génération de 650 V 'rapides' dans un robuste boîtier TOLL. Ces MOSFET SiC 'Fast' de Gen-3 (G3F) sont conçus pour des applications à haute puissance et haute fiabilité telles que centres de données AI, recharge de véhicules électriques et solutions de stockage d'énergie. Les principales caractéristiques incluent :
- Résistance on parmi les meilleures de sa catégorie, de 20 à 55 mΩ
- Optimisés pour la vitesse de commutation la plus rapide et la plus grande efficacité
- Jusqu'à 25°C de températures de boîtier inférieures et jusqu'à 3 fois plus de durée de vie que les alternatives
- Réduction de 9 % de la résistance thermique jonction-boîtier
- Empreinte PCB 30 % plus petite et taille 60 % plus petite que le D2PAK-7L
Le design de référence du système d'alimentation AI de 4,5 kW de Navitas, mettant en vedette le MOSFET G3F, atteint une efficacité de pointe supérieure à 97 % et une densité de puissance de 137 W/inch³, ce qui en fait la PSU AI avec la plus haute densité de puissance au monde.
Navitas Semiconductor (Nasdaq: NVTS) hat seine 3. Generation der 650 V 'schnellen' Siliziumkarbid (SiC) MOSFETs in einem robusten TOLL-Gehäuse eingeführt. Diese Gen-3 'Fast' (G3F) SiC MOSFETs sind für Anwendungen mit hoher Leistung und hoher Zuverlässigkeit wie KI-Rechenzentren, das Laden von Elektrofahrzeugen und Energiespeicherlösungen konzipiert. Zu den wichtigsten Merkmalen gehören:
- Beste in ihrer Klasse niedrige Einschaltwiderstände von 20 bis 55 mΩ
- Optimiert für schnellste Schaltgeschwindigkeit und höchste Effizienz
- Bis zu 25°C niedrigere Gehäusetemperaturen und bis zu dreimal längere Lebensdauer als Alternativen
- 9% Reduzierung des thermischen Widerstands zwischen Verbindung und Gehäuse
- 30% kleinere PCB-Fläche und 60% kleinere Abmessungen im Vergleich zum D2PAK-7L
Navitas' Referenzdesign für das 4,5 kW AI-Netzteil, das den G3F SiC MOSFET enthält, erreicht eine Spitzen-effizienz von über 97% und eine Leistungsdichte von 137 W/inch³, was es zum AI-PSU mit der höchsten Leistungsdichte der Welt macht.
- Introduction of 3rd generation 650 V 'fast' SiC MOSFETs for high-power applications
- Best-in-class low on-resistance of 20 to 55 mΩ
- Up to 25°C lower case temperatures and up to 3x longer life than alternative SiC products
- 4.5 kW AI power system reference design achieves peak efficiency above 97%
- World's highest power density AI PSU at 137 W/inch³
- None.
Navitas Semiconductor's introduction of their Gen-3 'Fast' (G3F) 650 V SiC MOSFETs in the TOLL package represents a significant advancement in power semiconductor technology. The new offering combines high power capability with low on-resistance (20 to 55 mΩ), optimized for fast switching speeds and high efficiency. This is particularly important for AI data centers, EV charging and renewable energy applications, where power density and efficiency are paramount.
The proprietary 'trench-assisted planar' technology employed in these MOSFETs is a key differentiator. By delivering up to 25°C lower case temperatures and up to 3x longer life compared to alternatives, Navitas is addressing critical reliability concerns in high-power applications. The thermal performance improvement, coupled with the compact TOLL package design, enables higher power density solutions - a critical factor in space-constrained applications like AI servers and electric vehicles.
The 4.5 kW AI power system reference design showcasing
For the EV market, the suitability of these MOSFETs for 400 V battery systems in various powertrain components (OBC, DC-DC converters, traction drives) positions Navitas to capitalize on the rapidly growing electric vehicle sector. The improved thermal and electrical characteristics could contribute to extended range and faster charging times in EVs, addressing key consumer concerns.
Navitas Semiconductor's launch of the Gen-3 'Fast' SiC MOSFETs represents a strategic move to strengthen its market position in high-growth sectors like AI, electric vehicles and renewable energy. The company's focus on these burgeoning markets aligns well with global trends towards digitalization and decarbonization, potentially driving long-term revenue growth.
The superior performance metrics of the new products, such as higher efficiency and power density, could translate into a competitive advantage for Navitas. This may lead to increased market share and potentially higher profit margins, especially if the company can maintain a technological edge over competitors.
However, investors should note that the semiconductor industry is highly competitive and cyclical. While Navitas appears to be at the forefront of SiC and GaN technology, maintaining this position will require continued R&D investment. The company's ability to scale production and manage costs while delivering cutting-edge products will be important for financial performance.
It's worth monitoring how quickly Navitas can convert this technological advancement into tangible financial results. Key metrics to watch in upcoming quarters include revenue growth, particularly in the targeted AI and EV segments, as well as gross margins, which could benefit from the premium positioning of these high-performance products.
Lastly, the company's success in securing design wins with major OEMs in the AI and EV space could be a significant catalyst for future growth. Investors should look for announcements of partnerships or major customer acquisitions as indicators of market traction for these new products.
Navitas Semiconductor's introduction of Gen-3 'Fast' SiC MOSFETs taps into several high-growth markets, positioning the company at the intersection of major technological trends. The AI server market, in particular, is experiencing explosive growth, with data center power consumption becoming a critical concern. Navitas' high-efficiency solution addresses this pain point directly, potentially capturing a significant share of this rapidly expanding market.
In the EV sector, the global push towards electrification is creating a substantial demand for high-performance power semiconductors. With major automakers accelerating their EV rollouts, Navitas' products could see increasing adoption in various EV subsystems. The improved thermal performance and longer lifespan of these MOSFETs align well with the automotive industry's stringent reliability requirements.
The renewable energy market, especially solar and energy storage solutions, represents another significant opportunity. As countries worldwide increase their renewable energy capacity, the demand for high-efficiency power conversion solutions is set to grow. Navitas' products, with their high power density and efficiency, are well-positioned to capitalize on this trend.
However, it's important to note the intensely competitive nature of the semiconductor market. While Navitas appears to have a technological edge, competitors like Infineon, STMicroelectronics and ON Semiconductor are also investing heavily in SiC and GaN technologies. Navitas will need to maintain its innovation pace and effectively communicate its value proposition to maintain and grow its market share.
Overall, the market outlook for Navitas' new products appears positive, driven by strong tailwinds in AI, EV and renewable energy sectors. The company's ability to execute on this opportunity and translate technological leadership into market share gains will be important for its future success.
3rd gen 650 V ‘fast’ silicon carbide (SiC) MOSFETs deliver highest power density in robust, thermally enhanced packaging for critical, high-reliability, high-efficiency applications
TORRANCE, Calif., Aug. 01, 2024 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today extended its new portfolio of Gen-3 ‘Fast’ (G3F) 650 V SiC MOSFETs into a thermally-enhanced, rugged, high-speed, surface-mount TOLL (Transistor Outline Leadless) package designed for demanding, high-power, high-reliability applications.
Combining high-power capability and best-in-class low on-resistance of 20 to 55 mΩ, these 650 V SiC MOSFETs have been optimized for the fastest switching speed, highest efficiency, and increased power density demanded by applications such as AI data center power supplies, EV charging and energy storage and solar solutions (ESS).
Navitas’ GeneSiC products use a proprietary ‘trench-assisted planar’ technology that provides world-leading efficiency performance over the temperature range, with G3F MOSFETs delivering high-speed, cool-running performance that ensures up to 25°C lower case temperatures and up to 3x longer life than alternative SiC products.
Navitas’ latest 4.5 kW AI power system reference design features the G3F45MT60L (650V 40 mΩ, TOLL) G3F SiC MOSFET in an interleaved CCM-TP PFC topology. Complemented by the NV6515 (650V, 35mΩ, TOLL) GaNSafe™ Power IC in the LLC stage, the 4.5 kW solution has a peak efficiency above
The surface-mount TOLL package offers a
The G3F family in TOLL package is released and available for purchase. For more information, please visit www.navitassemi.com or contact info@navitassemi.com.
About Navitas
Navitas Semiconductor (Nasdaq: NVTS) is the only pure-play, next-generation power-semiconductor company, celebrating 10 years of power innovation founded in 2014. GaNFast™ power ICs integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary GeneSiC™ power devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Focus markets include EV, solar, energy storage, home appliance / industrial, data center, mobile, and consumer. Over 250 Navitas patents are issued or pending. Navitas offers the industry’s first and only 20-year GaNFast warranty and was the world’s first semiconductor company to be CarbonNeutral®-certified.
Navitas Semiconductor, GaNFast, GaNSense, GeneSiC, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names, and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.
Contact Information:
Llew Vaughan-Edmunds, Sr Director, Corporate Marketing & Product Management
info@navitassemi.com
Stephen Oliver, VP Investor Relations
ir@navitassemi.com
A photo accompanying this announcement is available at https://www.globenewswire.com/NewsRoom/AttachmentNg/8de2c88d-41b6-4c4a-9f80-9a8ec29fe434
FAQ
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